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2SB727K-E Renesas Electronics Corporation Rochester Electronics 28 $2.32 $1.88

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2SB727 datasheet (25)

Part Manufacturer Description Type PDF
2SB727 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SB727 Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727 Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SB727 Others Semiconductor Master Cross Reference Guide Scan PDF
2SB727 Others Scan PDF
2SB727 Others The Japanese Transistor Manual 1981 Scan PDF
2SB727 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB727 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB727 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB727 Others Transistor Replacements Scan PDF
2SB727 Others Cross Reference Datasheet Scan PDF
2SB727(K) Hitachi Semiconductor Silicon PNP Darlington Transistor Original PDF
2SB727K Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SB727(K) Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727K Renesas Technology Silicon PNP Epitaxial Original PDF
2SB727(K) Others Transistor Substitution Data Book 1993 Scan PDF
2SB727K Others The Transistor Manual (Japanese) 1993 Scan PDF

2SB727 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract:
Text: 2SB727 (K) Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB l ì 2 I 1 2 1 Base 2. Collector (Flange) 3 , V V V A A W °C to +150 P Tj 1 C *' Tstg °C 2SB727 (K) Electrical , to , , 2 HITACHI 2SB727 (K) D C C u rre n t T ra n s fe r R a tio vs. T y p ic a l O u tp u , rre n t lc (m A ) 3 HITACHI 2SB727 (K) 4 HITACHI 2SB727 (K) Notice When using


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PDF 2SB727 2SD768 O-220AB D-85622
1998 - Hitachi DSA002787

Abstract:
Text: 2SB727 (K) Silicon PNP Epitaxial Application Medium speed and power switching complementary , °C °C 2SB727 (K) Electrical Characteristics (Ta = 25°C) Item Symbol Min ­120 ­7 - - 1000 - - , Voltage VCE (V) 2 2SB727 (K) DC Current Transfer Ratio vs. Collector Current 10,000 TC = 25 , ­3 Collector current IC (mA) ­10 3 2SB727 (K) Transient Thermal Resistance 10 Thermal , °C 1-1,000 ms 4 2SB727 (K) When using this document, keep the following in mind: 1. This


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PDF 2SB727 2SD768 O-220AB D-85622 Hitachi DSA002787
1997 - 2SB727

Abstract:
Text: 2SB727 (K) Silicon PNP Epitaxial Application Medium speed and power switching complementary , = 25°C 2SB727 (K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , = ­3 A* ­3 ­10 ­30 ­100 ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727 (K) DC , 2SB727 (K) Transient Thermal Resistance Thermal resistance j-c (°C/W) 10 1-1,000 s 3 1-1,000 ms , ) Time t 4 2SB727 (K) Notice When using this document, keep the following in mind: 1. This


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PDF 2SB727 2SD768 O-220AB D-85622 Hitachi DSA001650
2000 - 2SB727

Abstract:
Text: 2SB727 (K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition Sep. 2000 Application Medium , ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727 (K) Electrical Characteristics (Ta = 25 , Voltage VCE (V) 2SB727 (K) DC Current Transfer Ratio vs. Collector Current Typical Output , °C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727 (K) Transient Thermal Resistance , 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727 (K) Package


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PDF 2SB727 ADE-208-857 2SD768 O-220AB DSA003644
Not Available

Abstract:
Text: H ITACH I 2SB727 K SILICON PNP EPITAXIAL MEDIUM SPEED AND POW ER SW ITCHING CO M PLEM ENTARY PAIR W ITH 2S D 7 6 8 K ; I . IJáNC 2 C'o H ecu x r « F j- i ü g c í 3 - E íM tK Í {iíío s e n s K H H in m m > (JEDEC TO-220AB) I ABSOLUTE M AXIM UM RATINGS i,Ta=250C) lltrtn Collector to base voltage Collector to emitter voilage Emitter to base voltage Collector current Collector peak cutrcm , 2SB727 ® AREA OF SAFE OPERATION TYPICAL OUTPUT CHARACTERISTICS r : ?<> V - ¡ V ' ? H > v


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PDF 2SB727 O-220AB) 2SUT27® 2SB727®
Not Available

Abstract:
Text: HITACHI 2SB727 (K) 4 HITACHI 2SB727ÇK ) Notice When using this document, keep the , 2SB727 (K) Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TQ -220AB Absolute Maximum Ratings (Ta = 25°C) Item C ollector to base voltage C ollector to em itter voltage Emitter to base voltage C ollector current C , HITACHI 2SB727 (K) Typical O uipu i Characteristics -5 DC Current Transfer Ratio vs Collector Current


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PDF 2SB727 2SD768 -220AB
toshiba 2SB755

Abstract:
Text: SA1365 2SA1036K 2SB 710A K T 2SA1036K 2SB 711 •• ■y-virv 2SB885 2SB674 2SB727 (K) 2SB950A 2SB1339 2SB 712 . vy>jy 2SB885 2SB673 2SB727 (K) 2SB950A 2SB1339 2SB 713 - ta T 2SB681


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
1999 - 2SB727

Abstract:
Text: 2SB727 (K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD768(K) Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3 , . Value at TC = 25°C 2SB727 (K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , V, IC = ­3 A*1 ­3 ­10 ­30 ­100 ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727 (K , current IC (mA) ­10 3 2SB727 (K) Transient Thermal Resistance Thermal resistance j-c (°C/W


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PDF 2SB727 2SD768 O-220AB DSA003780 Hitachi DSA003780
2SB727

Abstract:
Text: 150 -55~150 Tstg Storage Temperature Range isc Websitewww.iscsemi.cn 2SB727 , 2SB727 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO


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PDF -120V 2SD768 -60mA -120V, -100V; 2SB727 2SD768
2000 - 2SB727

Abstract:
Text: products contained therein. 2SB727 (K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition , °C Storage temperature Tstg ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727 (K , ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727 (K) DC Current Transfer Ratio vs , ­500 IB2 Ta = 25°C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727 (K) Transient , °C 0.1 0.03 0.01 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727 (K


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PDF D-85622 2SB727 2SD768
2000 - 2SB727

Abstract:
Text: products contained therein. 2SB727 (K) Silicon PNP Epitaxial ADE-208-857 (Z) 1st. Edition , °C Storage temperature Tstg ­55 to +150 °C Note: 1. Value at TC = 25°C 2SB727 (K , ­300 ­1,000 Collector to emitter Voltage VCE (V) 2SB727 (K) DC Current Transfer Ratio vs , ­500 IB2 Ta = 25°C ­0.3 ­1.0 ­3 Collector current IC (mA) ­10 3 2SB727 (K) Transient , °C 0.1 0.03 0.01 1 10 1 100 10 100 Time t 4 1,000 (s) 1,000 (ms) 2SB727 (K


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PDF D-85622 2SB727 2SD768
Nec K 872

Abstract:
Text: 2SA1195 2SB1086 2SB 879 b iL 2SA1507 2SA1195 2SB1086A 2SB 880 = m 2SB676 2SB601 2SB727 00


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PDF 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SA1015 2SB1306 2SB873 2SB1086 2SB1479 2SB548 2SB1480 2SB1334
2SA818

Abstract:
Text: ^ fé T 2sb880 2sb674 2sb727 00 2sb950 2sb1341 2sb 673 S S 2sb886 2sb975 2SB791(k) 2sb1343


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PDF 2sa1209 2sa1142 2sa818 2sa1284 2sa1220 2sb1086 2sa1011 2sa968 2sa1220a 2SB681 TOSHIBA 2SB681 2SC4341 2SB849 2SB601 2sb669 2SB558 2SB688 2SA1142
2SB1099

Abstract:
Text: . 2SB885 2SB673 2SB727 (K) 2SB950 2SB1339 2SB 1088 b a 2SB887 2SB955 00 2S8 1089 b a 2SB824


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PDF 2SA1706 2SB880 2SB676 2SB601 2SB950 2SB1341 2SB886 2SB673 2SB1108 2SB1343 2SB1099 2SB615 nec 2SB1099 B676 2SB613 2SA914 2S8834 1091 2SB861
2SD768

Abstract:
Text: Inchange Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO


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PDF 2SD768 O-220C 2SB727 2SD768 DARLINGTON 3A 100V npn 2SB727 2SD76
2SB557 TOSHIBA

Abstract:
Text: m 2SB554 2SB 601 B m 2SB884 2SB727 (K) 2SB1063 2SB1339 2SB 604 & T 2SB507 2SB596 2SA1069


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PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB546A 2SB554 2sa483 2SB861 2SB857 2SB54
2SA1281

Abstract:
Text: - 26 - m % Type No. tt S Manuf. 3. 3 SANYO ï 2 TOSHIBA b s NEC a îl HITACHI « ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI □ - A ROHM 2SA 1253- 2SA1048 ■7CA1 1 7C 2SB774 2SA933S 2SA 1254 . « T 2SA1Ì77 2SA1162 2SA 1255 , 2SA1257 2SA1330 2SB792 2SA 1256 , 2SA1226 2SA1022 2SA1733K 2SA 1257 2SA1255 2SA1330 2SB792 2SA 1258 „ 2SB677 2SB765 2SB950 2SB1341 2SA 1259 . 2SR676 2SB727 ¿SB75Í 2SB1339 2SA 1260 — ¥ 2SB675 2SB872


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PDF 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330 2SB792 2SA1226 2SA1022 2SA1733K 2SA1281 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
2sa970

Abstract:
Text: - 17 - s € Type No. tt « Manuf. h $ SANYO Ä 2 TOSHIBA B S NEC B ÎL HITACHI « ± a FUJITSU fâ t MATSUSHITA h * MITSUBISHI □ — a ROHM 2SA 892 ' •y-virv 2SB675 2SB727 (K) 2SB1339 2SA 893 - ED w 2SA1207 2SA970 2SA988 2 SA1127 2SA904A 2 SA10 3 8 2SA 893A ED 2SA970 2SA1038 2SA 894 SÎBÎS 2SB598 2SB564 2SB562 2SA683 2SA934 2SA 895 St0$S 2SA1005 2SA838 2SA 896 y - 2SB1208 2SA949 2SB648A 2SA1124 2SA 89/ V—— 2SA715 2SA699A 2SB1064 2SA 898 "'


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2sa949 2SA1038
2SB727

Abstract:
Text: HITACHI 2SB727K SILICON PNP EPITAXIAL MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD768;g) {JEDEC TO-22QAB) I ABSOLUTE MAXIMUM RATINGS (Tu=25°C) 1. Ba$C 2. Collector (Giunge) 3. Emiiicr (Dimensions in mm) Item Symbol 2S8727® Unit Collector (o base voltage VCBÛ -120 V Collector to emitter voltage VCEO -120 V Emitter to base voliage Vt-llO -7 V Collector current Ic -6 A , €” 3.0 — Pulse Tesi 2SB727 (g) AREA OF SAFE OPERATION g -i.o TYPICAL OUTPUT CHARACTERISTICS -5


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PDF 2SB727K 2SD768 O-22QAB) 2S8727Â -60mA* 2SB727 2SB727K
2SD768

Abstract:
Text: SavantIC Semiconductor Product Specification 2SD768 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB727 ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO


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PDF 2SD768 O-220C 2SB727 2SD768 2SB727
Not Available

Abstract:
Text: 2SD768(K) Silicon NPN Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SB727 (K) Outline TO-220AB 2 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 3 kQ (Typ) 200 Q ~ ^ (Typ) ¿ 3 ^ Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage ^CBO 120 V Collector to em itter voltage VC 0 E 120 V Emitter to base voltage VE0 B 7 V Collector current lc


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PDF 2SD768 2SB727 O-220AB 2SD768Ã
2SB727

Abstract:
Text: HITACHI 2SD768 K - SILICON NPN EPITAXIAL MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SB727 (R) 1. Base 2. Coltcclor (rinn^c) .i. tiniuír (Dimensions in mm} (JEDEC TO-22QAB) ■ABSOLUTE MAXIMUM RATINGS 2SD768® Unii Collector io base voltage VCBO 120 • V Collector to emitter voltage Veto 120 V Hiniiter to base voltage Vebo 7 V Collector current tc 6 A Collector peak current ic(peak) 10 A Collector power dissipation


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PDF 2SD768 2SB727 O-22QAB) 2SD768Â
1999 - 2SD768

Abstract:
Text: 2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727 (K) Outline Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 6 10 40 150 ­55 to +150 Unit V V V A A W °C


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PDF 2SD768 2SB727 Hitachi DSA00279
Not Available

Abstract:
Text: °C 2SB727ÇK ) Electrical Characteristics (Ta = 25 °C) Item Symbol Emitter to base breakdown voltage , €” US — 1. Pulse test 2 HITACHI 2SB727ÇK ) D C C u rre n t T ra n s fe r R a tio vs , 2SB727ÇK ) 4 HITACHI , 2SB727 (K) Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline T O -2 2 0 A B 2 M [ 1 1. B a s e 1 |( 2. C o


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PDF 2SB727 2SD768 2SB727Ã
Not Available

Abstract:
Text: -3 .5 ^ B E (s a t)2 Note: 1. Pulse test. See switching characteristic curve of 2SB727 (K


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PDF 2SB1400 O-220FM
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