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2SB710A-S-TX Panasonic Electronic Components Bristol Electronics 2,900 $0.38 $0.07

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2SB710A datasheet (12)

Part Manufacturer Description Type PDF
2SB710A Kexin Silicon PNP Epitaxial Planer Type Original PDF
2SB710A Panasonic Transistor for general amplification. Complementary to 2SD0602A (2SD602A) Original PDF
2SB710A Panasonic Transistor Original PDF
2SB710A) Panasonic PNP Transistor Original PDF
2SB710A TY Semiconductor Silicon PNP Epitaxial Planer Type - SOT-23 Original PDF
2SB710A Others Shortform Transistor PDF Datasheet Scan PDF
2SB710A Others Japanese Transistor Cross References (2S) Scan PDF
2SB710A Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB710A Others Transistor Substitution Data Book 1993 Scan PDF
2SB710A Others The Japanese Transistor Manual 1981 Scan PDF
2SB710A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB710A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

2SB710A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SD602

Abstract: 2SB710A SD602A 2SB710 2SB710 S ice5 SC-59A K150 2SD602A 2SB710 R
Text: 2SB710, 2SB710A , 2SB710, 2SB710A )\/~ ? is - j - ] f 2 / S i PNP Epitaxial Planar > U / C o m p , °C ) Item * 2SB710 2SB710A 2SB710 X Ì v 9 W ± - 2SB710A X Symbol VcBO VcKO V ebo Ic P Ic Pc T, Tstg , . max. - 0 .1 Unit ? 9 l * m m ti 2SB710 2SB710A 2SB710 2SB710A ; ma V V V '< - x W , hpE Classification f U n i LJ Class h KEl Marking 2SB710 Symbol 2SB710A n C Q 2SB710 D Q in- n r 2SB710A - 135 National - ifiiiiiiniiiii ; x IEEE 9%WL ~ V


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PDF 2SB710, 2SB710A, 2SB710A 2SB710 2SB710A Ie--50 2SD602 SD602A 2SB710 S ice5 SC-59A K150 2SD602A 2SB710 R
1998 - 2SB710A

Abstract: No abstract text available
Text: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification , Parameter Collector to base voltage Collector to 2SB710 2SB710A 2SB710 Symbol VCBO VCEO VEBO ICP IC PC Tj , voltage 2SB710A Emitter to base voltage Peak collector current Collector current Collector power , JEDEC:TO­236 EIAJ:SC­59 Mini Type Package Marking symbol : C(2SB710) D( 2SB710A ) s Electrical , 2SB710A 2SB710 2SB710A (Ta=25°C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob


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PDF 2SB710, 2SB710A 2SD602 2SD602A 2SB710 2SB710A 2SB710 2SB710) 2SB710A)
2SD836

Abstract: 2SB750A 2SB750 2SD602 2sd836a 2SB710A 2SB726 2SD602A 2SB710 GOD004S
Text: PANASONIC INDL/ELEKiSEMI} 7SC D | bì32fl5M GOD004S M "T- 2SB710, 2SB710A 2SB710, 2SB71 OA "J , Ratings (Ta = 25°C) Item Symbol Value Unit 2SB710 -vCB0 30 V 2SB710A 60 y 9 ' 3- ï -y 2SB710 -vCE0 25 V 2SB710A 50 -vEB0 5 , V -it/Lm=> i- ? ? mm. -Icp 1 A -le 500 mA Pc 200 mW , = 20 V, IE = 0 0.1 M ? • 2SB710 VCBO -Ic = 10/zA, IE = 0 30 V KtŒ 2SB710A 60 2SB710 -VCE0 — Ic = 10 m A, IB = 0 25 v i ì -y 2SB710A 50 — Vebo -Ie = 10/ÌA, Ic = 0 5 V


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PDF 32fl5M GOD004S 2SB710, 2SB710A 2SB71 2SD602, 2SD602A 2SD602A 2SD836 2SB750A 2SB750 2SD602 2sd836a 2SB710A 2SB726 2SB710
2SB710A

Abstract: 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
Text: Transistor 2SB0710, 2SB0710A (2SB710, 2SB710A ) Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ñ0.05 s Absolute Maximum Ratings Parameter 0.4±0.2 2 1 (0.95) (0.95) (Ta=25°C) 5° Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion , 2SB710A ­40 2SB710 ­20 0 ­3 ­10 ­30 ­100 Collector to base voltage VCB (V) 1 3


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PDF 2SB0710, 2SB0710A 2SB710, 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB710A 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
2sd649

Abstract: 2SD602 2SB710 2SB710A 2SD602A
Text: r PANASONIC INDL/ELEKiSEim 7EC D~| L^35fiS4 □ DDEi3fc,a 0 _2SD602, 2SD602A 2SD602, 2SD602A \) ZJ > NPN x tf £ ¿ris T JUZf Is—ffó/Si NPN Epitaxial Planar —$iitSffl/General Amplifier 2SB710, 2SB710A t 3 V ~f V ^ V 2 l) /Complementary Pair with 2SB710, 2SB710A ■m ^[/Feature • VcEisa.) ¿'{ÊV^/LOW VcHsat) ifêftS;^fê/Abosolute Maximum Ratings (Ta=25 °C) Item Symbol Value Unit 2SD602 V 30 v -<—xftŒ 2SD602A * CBO 60 2SD602 v 25 " v jc. ì ••/ 2SD602A V CEO 50


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PDF 35fiS4 2SD602, 2SD602A 2SB710, 2SB710A 2SB710A 2SD602 2sd649 2SB710 2SD602A
2SB710A

Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute


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PDF 2SB710A OT-23 2SB710A
2SB737

Abstract: 2SB694H 2SB747 2SB718 2SB709 2SD661 2SD601 2SD756 2SD756A 2SB698
Text: 2SB710A föT G A -60 -50 -0.5 0.2 -0.1 -20 85 340 -10 -0. 15 -0.6 -1.5 -0.3 -0.03 2SB713 ® h PA -200 , 2SD602 (SC-59A) EBC 2SB710 200* -10 -0.05 15 2SD602A (SC-59A) EBC 2SB710A 7* -5 -0. 5 220


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PDF 2SB694H 2SB698 2SB703 2SB703A 2SB707 2SB708 2SD780A SC-59) 2SB736A 150mV 2SB737 2SB747 2SB718 2SB709 2SD661 2SD601 2SD756 2SD756A
mn171603

Abstract: an8523S AN3815K Mini servo motor AN3452FBS mini servo motor driver AN3893FHP MN187324 MN1873223 h0050
Text: A pplication B lo c k Diagram s Video Applications © V C R System Note) The transistors and diodes listed below can be used for the peripheral circuits in this block diagram. · Resistor built-in transistor: UN2000T Series (S Mini 3P) · General purpose transistor: 2SB710A /2SD602A, etc. · Switching diode: M A152 Series. MA165, etc. · Schottky barrier diode: MA786, MA723, etc. >6480 5 Input Library micon. M N187324 Tuning Prescaler AN8523S FM Demodulator ANB941SB Video Signal Processor AN8916FBP


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PDF UN2000T 2SB710A/2SD602A, MA165, MA786, MA723, N187324 AN8523S ANB941SB AN8916FBP MN8881 mn171603 AN3815K Mini servo motor AN3452FBS mini servo motor driver AN3893FHP MN187324 MN1873223 h0050
2SA1441

Abstract: 2sb1340 2SA1712 2SB1020 2SA1763 2SA1516 2SB921 2SA1682 1729H 2SB766A
Text: 2SB1607 2SA 1727 □ -A 2SA1772 2SA1400 2 SA 1728 H m 2SA1182 2SA1464 2SB710A 2SA1366


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PDF 2SB1227 2SA1718 2SB1194 2SB1340 2SB1228 2SB1020 2SA1719 2SB1195 2SB1344 2SA1441 2sb1340 2SA1712 2SA1763 2SA1516 2SB921 2SA1682 1729H 2SB766A
WR1 marking code

Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
Text: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE(sat) Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450


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PDF 2SD602, OT-23 2SB710 2SB710A 2SD602: 2SD602A: 300mA, 200MHz 01-June-2005 2SD602 WR1 marking code transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710A marking code WR1
Not Available

Abstract: No abstract text available
Text: Product specification 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol


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PDF 2SB710A OT-23
2010 - BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Text: RF LOW-POWER SILICON PNP Item Number Part Number Manufacturer V(BR)CEO (V) fr (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max °C Package Style V(BR)CEO BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A 2SA493 BC212BP BC212KB 2SA1317R 2SA1318R 2SA1338AL4 2SA1338AY4 2SA1339R 2SA1318S 1 2SA1338AY5 2SA1339S BC212A 2SA1299E 2SA999 2SA1030 2SB793A 2SA1317T 2SA1318T 2SA1338AL6 2SA1338AY6 2SA1339T 2SA1299F


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PDF BC212LA BCW86 2SB637K 2SB710A 2SA891 2SB621A BSW45A LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A ( 2SB710A ) Features · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 Unit: mm 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 0.16+0.10 ­0.06 2 (0.65) (0.95) (0.95) 1.9±0.1


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PDF 2002/95/EC) 2SD0602A 2SD602A) 2SB0710A 2SB710A)
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0710 (2SB710), 2SB0710A ( 2SB710A ) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Features · Large collector current IC · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 0.16+0.10 ­0.06 1 2 (0.65) Absolute


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PDF 2002/95/EC) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710
2001 - 2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Text: Transistor 2SB0710, 2SB0710A (2SB710, 2SB710A ) Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm I Features Collector to 2SB0710 emitter voltage 2SB0710A ­25 Emitter to base voltage VEBO ­5 ICP ­1 A Collector current IC ­ 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg ­55 ~ +150 +0.1 V Peak


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PDF 2SB0710, 2SB0710A 2SB710, 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB0710A 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
2003 - 2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A hfe1
Text: Transistors 2SB0710 (2SB710), 2SB0710A ( 2SB710A ) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ­0.05 Features 0.16+0.10 ­0.06 (0.95) (0.95) 1.9±0.1 2SB0710 (Emitter open) Unit VCBO -30 V 2SB0710A Collector-emitter voltage 2SB0710 (Base open) 10° -60 -25 VCEO V -50 2SB0710A VEBO -5 V Collector current IC - 0.5 A Peak collector current ICP -1


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PDF 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A hfe1
1998 - 2SD602

Abstract: 2SB710 2SB710A 2SD602A
Text: Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features 2SD602 30 VCBO 1.45 +0.1 0.4 ­0.05 +0.2 0.95 2.9 ­0.05 V 60 0.1 to 0.3 0.4±0.2 25 VCEO emitter voltage 2SD602A Unit +0.1 Collector to 1.9±0.2 2 Ratings 0.16 ­0.06 2SD602A 3 0 to 0.1 2SD602 base voltage 1 (Ta=25°C) Symbol Collector to 0.65±0.15 0.8 Parameter


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PDF 2SD602, 2SD602A 2SB710 2SB710A 2SD602 2SD602 2SB710A 2SD602A
2001 - 2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Text: Transistor 2SD0602, 2SD0602A (2SD602, 2SD602A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A ( 2SB710A ) Unit: mm I Features 2SD0602 30 VCBO 1.45 +0.1 0.4 ­0.05 +0.2 0.95 2.9 ­0.05 V 60 0.1 to 0.3 0.4±0.2 25 VCEO emitter voltage 2SD0602A Unit +0.1 Collector to 1.9±0.2 2 Ratings 0.16 ­0.06 2SD0602A 3 0 to 0.1 2SD0602 base voltage 1 (Ta=25°C) Symbol


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PDF 2SD0602, 2SD0602A 2SD602, 2SD602A) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SB0710 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
2003 - 2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Text: Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A ( 2SB710A ) Unit: mm 0.40+0.10 ­0.05 0.16+0.10 ­0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) · Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 5° 1.50+0.25 ­0.05 Features 2.8+0.2 ­0.3 3 2.90+0.20 ­0.05


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PDF 2SD0602A 2SD602A) 2SB0710A 2SB710A) 2SB0710A 2SB710A 2SD0602A 2SD602A
2002 - 2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Text: Transistor 2SD0602A (2SD602A) Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to 2SB0710A ( 2SB710A ) 0.40+0.10 ­0.05 0.16+0.10 ­0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) · Low collector to emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 5° s Features 2.8+0.2 ­0.3 1.50+0.25 ­0.05 3 2.90+0.20 ­0.05


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PDF 2SD0602A 2SD602A) 2SB0710A 2SB710A) 2SB0710A 2SB710A 2SD0602A 2SD602A
2SD636 R

Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SD552 2SD545
Text: 200* 10 0.05 15 2SB710A (SC-59A) EBC 2SD602A 100* 10 0.05 0.05* 0. 1* 0.4* 30* 2SB632 (TO


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PDF 2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SD552 2SD545
2001 - 2SD602

Abstract: No abstract text available
Text: Transistor 2SD0602, 2SD0602A (2SD602, 2SD602A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A ( 2SB710A ) Unit: mm s Features q q 0.40+0.10 ñ0.05 3 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25°C) 1.50+0.25 -0.05 2.8+0.2 -0.3 1 2


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PDF 2SD0602, 2SD0602A 2SD602, 2SD602A) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD0602A 2SD602
transistor 669A

Abstract: 669A 2SD350A 2SB646A 2SB546A 2SB547A 2SB54 2SB647A 2SB648A 2SB649A
Text: 1 1 200 * 6 176 2SB710A t 3 > 7 1)


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PDF 2SB624 Tc-25 2SB705A 2SB705B 2SB706A 2SB744A 2SD601A 300mV 2SB709A transistor 669A 669A 2SD350A 2SB646A 2SB546A 2SB547A 2SB54 2SB647A 2SB648A 2SB649A
2SC4969

Abstract: 2SD2436 2SB1584 2sd2433 2sb1583 2sb1582 2sd2434 2SC4971 2SC4970 2SC4972
Text: -2 0 100 -4 0 0 500 -5 0 0 20 10 2 2 1 (Mini 3-pin) 2SB710A 2SD602A 2SC3757 2SC4894 2SD1030 2SD1478A


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PDF machine71 2SC4972 2SC4974 2SC4975 2SC4973 MA152A MA1U152A MA1U152K MA152K MA1U152WA 2SC4969 2SD2436 2SB1584 2sd2433 2sb1583 2sb1582 2sd2434 2SC4971 2SC4970
2003 - Not Available

Abstract: No abstract text available
Text: Transistors 2SB0710 (2SB710), 2SB0710A ( 2SB710A ) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Features · Large collector current IC · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 0.16+0.10 ­0.06 1 2 (0.65) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage


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PDF 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710 2SB0710A
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