The Datasheet Archive

2SB595 datasheet (24)

Part Manufacturer Description Type PDF
2SB595 Micro Commercial Components PNP Silicon Power Transistor Original PDF
2SB595 Wing Shing Computer Components LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) Original PDF
2SB595 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SB595 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB595 Others Basic Transistor and Cross Reference Specification Scan PDF
2SB595 Others Shortform Transistor PDF Datasheet Scan PDF
2SB595 Others Japanese Transistor Cross References (2S) Scan PDF
2SB595 Others Cross Reference Datasheet Scan PDF
2SB595 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB595 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB595 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB595 Others Transistor Replacements Scan PDF
2SB595 Others Semiconductor Master Cross Reference Guide Scan PDF
2SB595 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB595 Others Scan PDF
2SB595 Others Transistor Substitution Data Book 1993 Scan PDF
2SB595 Others The Japanese Transistor Manual 1981 Scan PDF
2SB595 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB595 Others Shortform Transistor Datasheet Guide Scan PDF
2SB595 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

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2sb595

Abstract: 2SD525 100v pnp to220c
Text: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low , Product Specification 2SB595 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless , OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB595 SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors 4 -


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PDF 2SB595 O-220C 2SD525 -100V -100V; 2sb595 2SD525 100v pnp to220c
2005 - 2SB595

Abstract: 2SD525
Text: JMnic Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage :VCEO=-100V Low collector , Storage temperature -55~150 TC=25 JMnic 2SB595 Silicon PNP Power Transistors , 240 5 MHz 270 pF JMnic Product Specification 2SB595 Silicon PNP Power , Product Specification 2SB595 Silicon PNP Power Transistors 4 JMnic


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PDF 2SB595 O-220C 2SD525 -100V -100V; 2SB595 2SD525
2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB596 2SB857 2SB557 2SB54
Text: 2SB1314 2SB1369 2SB 574 íhO-7 2SB507 2SB596 2SB857 2SB 575 ï ha-5 2SB824 2SB595 2SB857 2SB 576 ' ï hn-5 2SB824 2SB595 2SB857 2SB 577 , =E ha—7 2SB920L 2SB595 2SB857 2SB 578 -


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PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB857 2SB557 2SB54
2SB595

Abstract: 2SD525
Text: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage :VCEO=-100V Low , temperature -55~150 TC=25 Inchange Semiconductor Product Specification 2SB595 Silicon , pF Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors , (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB595 Silicon


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PDF 2SB595 O-220C 2SD525 -100V 2SB595 2SD525
2SA818

Abstract: 2SB681 TOSHIBA 2SB681 2SC4341 2SB849 2SB601 2sb669 2SB558 2SB688 2SA1142
Text: 2sb863 2sb 682 _ z m 2sb633 2sb595 2sb703 2sb859 2sb942a 2sb1293 2sb 683 z s 2sb633 2sb859 , 2sb 688 „ K 2 2sb816 2sb849 2sb1075 2sb 689 - B iL 2sb507 2sb595 2sa1069a 2sb860 2sb1293 2sb 690 - b iL 2sb507 2sb595 2sa1069a 2sb859 2sa1634 2sb 691 . fé T 2sb775 2sb686 2sb1371


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PDF 2sa1209 2sa1142 2sa818 2sa1284 2sa1220 2sb1086 2sa1011 2sa968 2sa1220a 2SB681 TOSHIBA 2SB681 2SC4341 2SB849 2SB601 2sb669 2SB558 2SB688 2SA1142
2SB595

Abstract: transistor 2SB595 transistor 2sd525 2SD525
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. scs .i -100 .cn mi e , 2SB595 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO


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PDF 2SB595 -100V 2SD525 -100V; 2SB595 transistor 2SB595 transistor 2sd525 2SD525
Nec K 872

Abstract: 2SA1184 2SB548 2SB873 2SB1480 2SB1086 2SB1479 2SB1306 2SA1015 K 872
Text: - 55 - fi « Type No. tt « Manuf. = SANYO X 2 TOSHIBA b m NEC S iL HITACHI « ± a FUJITSU fé T MATSUSHITA H m MITSUBISHI □ - a ROHM 2SB 858 0 íi 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 a i 2SB920 2SB595 2SB703A 2SB942A 2SA1634 2SB 860 in 2SB920 2SB595 2SB703A 2SB942A 2SB1293 2SB 861 ED 2SA968B 2SA1006A 2SB1085A 2SB 862 2SB885 2SB601 2SB1104 2SB1339 2SB 863 m 2 2SA1232 2SB 864 e w 2SA1015 2SA733 2SA1039 2SB 866 = m 2SA1193ÍK) 2SB 867 - fé T


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PDF 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SB548 2SB873 2SB1480 2SB1086 2SB1479 2SB1306 2SA1015 K 872
2sb595

Abstract: 2sb595o 2SB595-O transistor 2sd525
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB595 POWER AMPLIFIER APPLICATIONS. 2SB595 U nit in mm 10.3MAX., jZÍ3.6¿0.8 · · · · High Breakdown Voltage : V^EO = -100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)" -2.0V (Max.) Complementary to , 05-24 - TO SH IBA 2SB595 < o COMMON EMITTER Tc = 25°C Tc = 75°C 25 -2 5 COMMON , VOLTAGE AM BIE N T TEM PERATURE 2 2 001 05-24 - TO SH IBA 2SB595 RESTRICTIONS ON


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PDF 2SB595 --100V 2SD525. 2sb595 2sb595o 2SB595-O transistor 2sd525
2SA748

Abstract: 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2SB548 2sb861 2SA715
Text: – 0-VÍTV 2SB595 2SB1289 2SA 765 - y->T> 2SB595 2SB1289 2SA 766 " « T 2SB861 2SB940 2SA 767 X


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PDF 2SA1705 2SB548 2SA715 2SA684 2SB1043 2SB817 2SA1232 2SB514 2SA985 2SA748 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2sb861 2SA715
2SB595

Abstract: No abstract text available
Text: 2SB595 POWER AMPLIFIER APPLICATIONS. FEATURES: SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 10.3 MAX. 03.6ÍO.2 · High Breakdown Voltage : V^gQ-100V · Low Collector-Emitter Saturation Voltage : VcE(sat)=~2.0V(Max.) · Complementary to 2SD525. Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage , Classification R : 40 ^ 80, 0 : 70 % 140, Y : 120 208 2SB595 le V GE C O L L E C T O R -EMITT


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PDF 2SB595 gQ--100V 2SD525. 2SB595
2SB595

Abstract: 2SD525 AC75
Text: TOSHIBA 2SB595 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2 S B 5 9 5 POWER AMPLIFIER APPLICATIONS. • High Breakdown Voltage : VcE0 = _ 100V • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V (Max.) • Complementary to 2SD525. • Recommended for 30W High-Fidelity Audio , , Y : 120-240 1 2001-05-24 TOSHIBA 2SB595 IC - VCE hfe - ic COMMON EMITTER Tc = 25 , (V) 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta (°C) 2 2001-05-24 TOSHIBA 2SB595


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PDF 2SB595 2SD525. 2SD525 AC75
toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: - 50 - S € Type No. ít « Maniif. H. n SANYO S 2; TOSHIBA B a NEC B iL HITACHI « ± a FUJITSU ® T MATSUSHITA H * MITSUBISHI □ — A BÖHM 2SB 698 - = $ 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB 699 0 ÎL 2SB817 2SB 700 B ÌL 2SB817 2SB755 2SA1232 2SB 70OA B ÎL 2SB817 2SB755 2SB 702 ■B iL 2SB755 2SA1232 2SB 702A b ÌL 2SB756 2SB 703 B b 2SB595 2SA1634 2SB 703A b b 2SB595 2SB1293 2SB 705 , B m 2SB755 2SB 707 B % 2SB825


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
2010 - 2SB5950

Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SD52 2SB616 2SD586 2SB595Y 2sb616 idb1016
Text: IDD525 SDT84924 SDT84924 2SB1063 2SB595 BD954 75 80 PNP NPN PNP PNP NPN NPN NPN PNP PNP PNP 50 2SB595 85 90 2SB595 2SB595R 2SB995 2SD1355 2SD1499 2SD525 2SD525 2SD525R 2SD1896 , -220var TO-220var SOT-186 TO-220AB TO-220AB TO-220 TO-220 500m 500m J J J J 2SB5950 2SD5250 2SB595Y


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PDF SDT6316 SDT6416 SML1643 SML1653 2SB747 2N1211 2N1617 2SB5950 2SD5250 2SB616 NEC 2SD586 to-53 2SD52 2SB616 2SD586 2SB595Y 2sb616 idb1016
transistor 2SB

Abstract: 2SB595 2sb 595 transistor 2SB595-R 2SB595R transistor 2sd525 2SD525
Text: Jt i, Tm.& i 9 Kfrm tmammLxs, t> t-r0 According to the value of hj>E(l) , the 2SB595 is classified as follows. CLASSIFICATION MIN. MAX 2SB595—R 4 0 80 8SB5S5-0 7 0 14 0 8 SB 595—Y 12 0 240 , SO-46 TOSHIBA 2-10A1A T^ it !) ÖA075 tW MOUNT INO- KIT M. A075 267 2sb595 ELECT RICAL


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PDF -100V 2SD525 transistor 2SB 2SB595 2sb 595 transistor 2SB595-R 2SB595R transistor 2sd525 2SD525
2010 - 2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Text: B0540C B0540C BLX47 BLX47 2N6192 2N5286 2N5611 2N5619 2SB595 2S9595 2SB595 IOB1016 IOB595 2SB995 2SB595R 2SB1016 2SB1054 2SB1063 SOT3304 SOT3304 SOT3304 SOT3324 SOT3324 SOT3324 2N5407 2N5411 BFT37 2N6193 2SB5950


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PDF 2N5410 9FT36 9UX78 BUX78 2SA1069AL 2N6191 2SB869 2SB933 2SB945 2SB5950 B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
2SD525

Abstract: 2SB595
Text: Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base TOR NDU ICO E SEM ANG INCH Collector;connected to mounting base Emitter Absolute maximum


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PDF 2SD525 O-220C 2SB595 2SD525 2SB595
en220

Abstract: DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
Text: 2sa 1675 < 2SB921L 2SB595 2SB708 2SB1371 2SB1289 2sa 1676 - E n RN2304 GN1L4M UN5113 RT1P441M


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PDF 2sb1203 2SA1244 2SB933 2SB1204 2SB952 2SB945 2SB1294 2SB1018 2SB946 2SA145Z en220 DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
2SB504

Abstract: 2SB507 2SB506A 2SB508 2SD325 2sb560 2SB506 2SB511 2SB536 2SB537
Text: -0.2 2SB566K BS LF PA/PSW -70 -50 -4 40 -1 -50 60 200 -4 -1 -1 -1.2 -2 -0.2 2SB595 ÄS PA -100 , -220AB)fi BCE 2SB595 3 -5 -0.5 130* 2SD526 TO-220ABjf> BCE 2SB596 180* -10 -0.05 25* 2SD545


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PDF Ta-25-C) 2SB434G 2SB435G 2SB502A 2SB503A 2SB504 2SB504A -60SD552 2SB552 2SD553 2SB507 2SB506A 2SB508 2SD325 2sb560 2SB506 2SB511 2SB536 2SB537
2SB595

Abstract: 2SD525
Text: 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 100 100 5 5 40 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic


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PDF 2SD525 O-220 2SB595 2SB595 2SD525
2SB1013

Abstract: 2S897 2SB1315 2SB1306 2SB679 2SA1307 2SA1431 1318J 2sb631 hitachi 2SB747
Text: 2SB595 2SB869 2SB 1294 □ —A 2SB1016 2SB945 2SB 1295 H n 2SA1362 2SB624 2SB831 2SB779


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PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SB1306 2SB679 2SA1307 1318J 2sb631 hitachi 2SB747
SS2205

Abstract: 2SA1628 HSI 527 2SB814 2SA1178 2SB1043 2SA1284 2SA1586 2SA1283 2SA950
Text: □ —A 2SA1257 2 SA1163 2SA811A 2SA1566 2SB814 2SA 1515 □ —A 2SB595 2SA950 2SB1116


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PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 HSI 527 2SB814 2SA1178 2SB1043 2SA1284 2SA1586 2SA1283 2SA950
2SA1441

Abstract: 2sb1340 2SA1712 2SB1020 2SA1763 2SA1516 2SB921 2SA1682 1729H 2SB766A
Text: 2SA 1740 h m 2SA1384 2SA1868 2SA 1741 5 S 2SA1469 2SB595 2SA1441 2SB945 2SB1292 2SA 1742 a


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PDF 2SB1227 2SA1718 2SB1194 2SB1340 2SB1228 2SB1020 2SA1719 2SB1195 2SB1344 2SA1441 2sb1340 2SA1712 2SA1763 2SA1516 2SB921 2SA1682 1729H 2SB766A
2SB595O

Abstract: 2SB595 2SD525
Text: y U 2SB595 o t^üteffl je©]A -í 7 7 ^ r > 7"ílií)ti:I L ï to : Pc = 40W(TC = 25°C) ÜSIffiT-to : VcEO=-100V(ft/h) MüWífr'hZ v>„ : VcE(sat) = -2.0V(fli^) 2SD525 b n > '/ U * y 9 ') iz 4' ll^Êtè (Ta = 25°C) ijifi : mm Il i BS "Ç" s fë a u s? ? . ^ _ X ng » j£ VCBO -100 V 3 i/ ? ? - i ; 7 i? Hill VCEO -100 V i 5 V 9 ■^ - X ng m Œ VEBO -5 V 3 u ? ? M SE ic -5 A ^ - X % m IB -0.5 A => ^ ? ? fl ife (Tc = 25°C) PC 40 W m & s jg Tj 150 °C « # -s m Tstg -55-150 °C 1C.3MAX


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PDF 2SB595 -100V 2SD525 O-220AB SC-46 2-10A1A -50mA, 2SB595O 2SB595
2SB595

Abstract: 2SD525 transistor 2sd525
Text: 2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -100 -100 -5 -5 40 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA


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PDF 2SB595 O-220 2SD525 -100V 2SB595 2SD525 transistor 2sd525
transistor regulator tv

Abstract: 2SC3346 2SC2242 2SC3559 2sD1413 transistor 2sd525 2sa1329 2sd1408 2SC3558 2SA1012
Text: 40 40 40 2SC3709 2SA1451 2SC1411 2SB1018 2SB596 2SB595 5 7 4 80 100 "300 60 50 80 50 30 40 40 30 25


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PDF T0-220 O-22QAB, TQ-220 2SC1569 2SC2242 2SC2073 2SD1052 2SD1052A 2SD880 2SC2233 transistor regulator tv 2SC3346 2SC3559 2sD1413 transistor 2sd525 2sa1329 2sd1408 2SC3558 2SA1012
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