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2SB561CTZ-E Renesas Electronics Corporation Rochester Electronics 14,300 $0.13 $0.10

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2SB561 datasheet (23)

Part Manufacturer Description Type PDF
2SB561 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SB561 Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
2SB561 Renesas Technology Silicon PNP Epitaxial Original PDF
2SB561 Various Russian Datasheets Transistor Original PDF
2SB561 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SB561 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB561 Others Transistor Substitution Data Book 1993 Scan PDF
2SB561 Others The Japanese Transistor Manual 1981 Scan PDF
2SB561 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB561 Others Scan PDF
2SB561 Others Shortform Transistor Datasheet Guide Scan PDF
2SB561 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB561 Others Basic Transistor and Cross Reference Specification Scan PDF
2SB561 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB561 Others Japanese Transistor Cross References (2S) Scan PDF
2SB561 Others Cross Reference Datasheet Scan PDF
2SB561 Others Shortform Transistor PDF Datasheet Scan PDF
2SB561B Hitachi Semiconductor Silicon PNP Epitaxial Transistor Original PDF
2SB561B Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
2SB561BTZ-E Renesas Technology Silicon PNP Epitaxial Original PDF

2SB561 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA985 NEC

Abstract: 2s8834 2SB596 2SB56 2SA985 toshiba 2sb555 2SB834 2SB537 2SB508 2SA836
Text: * » * * * * * * ♦ * * ♦ * t * * * * * * * * ♦ * * S € Type No. tt « Manuf. = ft SANYO X S TOSHIBA B m NEC B îl HITACHI * ± a FUJITSU K T MATSUSHITA H S MITSUBISHI □ — A ROHM 2SB 153 0 îl 2SB561 2SB 154 S îl 2SB561 2SB 155 h îl 2SB561 2SB 176 ' fâ T 2SB56 2SB 302 0 îl 2SA836 2SB 370 a îl 2SB562 2SB 370A 0 îl 2SB562 2SB , îl 2SB561 2SB 502 ^ 3E "s. 2SB508 2SB834 2SB566AO!) 2SB 503 • 2SB508 2SB834


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PDF 2SB561 2SB56 2SA836 2SB562 2SB507 ZSB834 2SA985 2SA985 NEC 2s8834 2SB596 2SB56 toshiba 2sb555 2SB834 2SB537 2SB508 2SA836
1999 - 2sb561

Abstract: Hitachi DSA002754
Text: 2SB561 Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD467 Outline 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector , , IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 1. The 2SB561 is grouped by hFE as follows. C 120 to 240 2 2SB561 3 2SB561 4 2SB561 When using this


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PDF 2SB561 2SD467 2sb561 Hitachi DSA002754
2sb561

Abstract: No abstract text available
Text: 2SB561 Silicon PNP Epitaxial HITACHI Application · · Low frequency power am plifier , 2SB561 Absolute Maximum Ratings (Ta = Item Collector to base voltage Collector to emitter voltage , 5 A V c8 = V be fT - - - ~ Cob f 1. The 2SB561 is grouped by hF E as follows. C 120 to 240 = -1 0 V , |E= 0 1 MHz 196 HITACHI 2SB561 Maximum Collector Dissipation , ) Collector Current lc (mA) HITACHI 19 7 2SB561 Collector to Emitter Saturation Voltage vs


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PDF 2SB561 2SD467 2sb561
1999 - 2SB561

Abstract: 2SD467 Hitachi DSA00398
Text: 2SB561 Silicon PNP Epitaxial Application · Low frequency power amplifier · Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute , VCB = ­10 V, IE = 0 f = 1 MHz Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector , 10 ­1 ­3 ­10 ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10


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PDF 2SB561 2SD467 2SB561 2SD467 Hitachi DSA00398
2000 - 2SB561

Abstract: Hitachi DSA0076 2SD467
Text: 2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 Application · Low , . Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , . The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector Dissipation Curve Typical Output , ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10 IB ­0.3 ­0.2


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PDF 2SB561 ADE-208-1023 2SD467 2SB561 Hitachi DSA0076 2SD467
2SB56I

Abstract: No abstract text available
Text: HITACHI 2SB561 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD467 £ % 1. Emitter 2. Collector 3. B&s« (Dimenswxts. in mm) (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (T a = 2 5 X ) Item C o llecto r to b ase v o ltaee C o tIccto r to e m itte r v oltage E m itte r to b ase v o ltag e C o llecto r cu rren t C o lle cto r p eak c u rren t -tC o lle cto r p o w er , e » sal) V as fT V V M Hz pF - Co, ft 85 to i 70 HITACHI 2SB561 TYPICAL


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PDF 2SB561 2SD467 2SB56I
2000 - 2SB561

Abstract: 2SD467
Text: products contained therein. 2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 , . Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , . The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = ­1 V, I C = ­0.15 A (Pulse test) 2SB561 Maximum Collector Dissipation Curve Typical Output , ­30 ­100 ­300 Collector Current IC (mA) ­1,000 3 2SB561 IC = 10 IB ­0.3 ­0.2


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2SB561

Abstract: 2SB56J 2SD467
Text: HITACHI 2SB561 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD467 1. Emiiicr 1, Collccior Ì. Base (Dimensions in mm) (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SB561 Unit Collector io base voltage Veno -25 V Collector to emitter voltage Vceo -20 V Emitter to base voltage Vebo -5 V Collector current Ic -0.7 A Collector peak currcnt iCtpcak) -1.0 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 °C Storage temperature Tsig -55 to


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PDF 2SB561 2SD467 2SB561 2SB56J 2SD467
2005 - 2SB561

Abstract: PRSS0003DA-A 2SB561BTZ-E 2SB561CTZ-E 2SD467 SC-43A
Text: Max 1.27 2.54 Ordering Information Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 , 2SB561 Silicon PNP Epitaxial REJ03G0645-0200 (Previous ADE-208-1023) Rev.2.00 Aug , +150 °C °C 2SB561 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown , MHz pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , ­1 V, IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 2SB561 Main


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PDF 2SB561 REJ03G0645-0200 ADE-208-1023) 2SD467 PRSS0003DA-A 2SB561 PRSS0003DA-A 2SB561BTZ-E 2SB561CTZ-E 2SD467 SC-43A
2SB561

Abstract: 2SB561C transistor 2sb561
Text: 2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES TO-92 Low Frequency Power Amplifier G H Emitter Collector Base J A CLASSIFICATION OF hFE D REF. Product-Rank 2SB561-B Range 85~170 B 2SB561-C 120~240 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51


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PDF 2SB561 2SB561-B 2SB561-C 14-Feb-2011 2SB561 2SB561C transistor 2sb561
2SB737

Abstract: 2SA1015 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1142 2SA1177
Text: 984 = % 2SA817 2SA953 2SB561 2SA720 2SA1399 2SA854 2SA 984K H # 2SA1306 2SA 985 „. 0 a , 997 «±a 2SB598 2SA966 2SA952 2SB561 2SB621 2SA1515 2SA 998 «dta 2SB764 2SB605 2SB561 2SB621A


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PDF 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA1209 2SA949 2SA1142 2SB648 2SA1352 2SB737 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1177
2005 - 2SB561

Abstract: 2SB561BTZ-E 2SB561CTZ-E 2SD467 PRSS0003DA-A SC-43A
Text: Max 1.27 2.54 Ordering Information Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 , . 2SB561 Silicon PNP Epitaxial REJ03G0645-0200 (Previous ADE-208-1023) Rev.2.00 Aug , +150 °C °C 2SB561 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown , MHz pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , ­1 V, IC = ­0.15 A VCE = ­1 V, IC = ­0.15 A VCB = ­10 V, IE = 0 f = 1 MHz 2SB561 Main


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2sa850

Abstract: 2sa1047 2SA992 2SA872 2SB564A 2sa9630 2SA1038 2SB861 2SB1212 2sa733
Text: 2SA1359 2SA1020 2SB744 2SB546A 2SB546A 2SB861 2SB861 2SA715 2SB649 2SA715 2SB561 2SB647 2SB647 2SA719 , 2SA916 2SA952 2SB561 2SA1016 2SA817 2SA1Û15 2SA966 2SA965 2SA950 2SA733 2SA953 2SA673AOO 2SB718 2SB861


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PDF 2SA930 2SA931 2SA932 2SA933 2SA929 2SA1015 2SA872 2SA112Y 2SA999L 2SA933 2sa850 2sa1047 2SA992 2SA872 2SB564A 2sa9630 2SA1038 2SB861 2SB1212 2sa733
A933

Abstract: SA1015 A933 S 2sa864 2SA564 2sa872 2sa733 SA112 2SA718A 2SA984
Text: 2SA 869 STBÄ 2SA984 2SA953 2SB561 2SA683 2SA854 2SA 870 2SA984 2SA953 2SB561 2SA684 2SA 871


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PDF 2SA987 2SA929 2SA933 2SA984 2SA562TM 2SA953 2SA1390 2SA719 2SA1399 A933 SA1015 A933 S 2sa864 2SA564 2sa872 2sa733 SA112 2SA718A
2SB504

Abstract: 2SB507 2SB506A 2SB508 2SD325 2sb560 2SB506 2SB511 2SB536 2SB537
Text: -0.05 2SB561 B3: LF PA -25 -20 -0. 7 0.5 -1 -20 85 240 -1 -0. 15 -0.5 -0.5 -0.05 2SB562 B iL LF PA , -0.15 20* 2SD467 TO-92B ECB 2SB561 350* -2 -0.5 38* 2SD468 (TO-92MOD) ECB 2SB562 110* -6


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PDF Ta-25-C) 2SB434G 2SB435G 2SB502A 2SB503A 2SB504 2SB504A -60SD552 2SB552 2SD553 2SB507 2SB506A 2SB508 2SD325 2sb560 2SB506 2SB511 2SB536 2SB537
2005 - Not Available

Abstract: No abstract text available
Text: Part Name 2SB561BTZ-E 2SB561CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping , developed or manufactured by or for Renesas Electronics. 2SB561 Silicon PNP Epitaxial REJ03G0645 , €“0.7 –1.0 0.5 150 –55 to +150 Unit V V V A A W ° C ° C 2SB561 Electrical , pF Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Rev , 2SB561 Main Characteristics Typical Output Characteristics 0.6 –500 Collector current IC


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2s8698

Abstract: 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
Text: 2SA1039 2SA 642 - 0 n 2SA562TM 2SB561 2SA854 2SA 643 - a a 2SB698 2SA950 2SB562 ZSA854 2SA 644


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PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
2SB561

Abstract: 2SB831 2SD1101 2SB83
Text: Pulse Test (¡rade » C Mark BB BC KM; 85 to 170 120 to 240 ■See characteristic curves of 2SB561.


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PDF 2SB831 2SD1101 2SB831 2SB561. 2SB561 2SD1101 2SB83
761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SA684 2SB737 2SB927 2SB686 761-B
Text: 2SA950 2SA952 2SB561 2SA719 2SA854 2SB 747 fé t 2SB920 2SB595 2SB703 2SB859 2SB979 2SB1293 2SB


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PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
Not Available

Abstract: No abstract text available
Text: 1 ] 21) lo 2 <> I See characteristic curves ot 2SB561.


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PDF 2SB831 2SD1101 2SB561.
Not Available

Abstract: No abstract text available
Text: characteristic curves o f 2SB561. 220 HITACHI 2SB831 Maximum Collector Dissipation Curve Ambient


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PDF 2SB831 2SD1101 2SB831 2SB561.
2SD467

Abstract: No abstract text available
Text: 2SD467 Silicon NPN Epitaxial HITACHI Application · · L ow frequency pow er am plifier C om plem entary pair w ith 2SB561 Outline TO-92 (1) 3 I I 1. Emitter 2. Collector 3. Base 2 1 8ó9 2SD467 Absolute Maximum Ratings (Ta = 2 5 °C ) Item Collector to base voltage Collector to em itter voltage Emitter to base voltage Collector current Collector peak current Collector pow er dissipation Junction tem perature Storage tem perature Symbol Ratings 25 20 5 0.7 1.0 0.5


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PDF 2SD467 2SB561 2SD467
2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB596 2SB857 2SB557 2SB54
Text: 2SB 598 - H # 2SA950 2SA952 2SB561 2SA719 2SB1035 2SA1515 2SB 599 B m. 2SA483 2SB861 2SB 600


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PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB554 2sa483 2SB546A 2SB857 2SB557 2SB54
2sa970

Abstract: 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1207 2SA1038 2SA904A 2sa949
Text: 2SA673A 2SA720 2SA854 2SA 928 - V- 2SB698 2SB561 2SB621 2SA1515 2SA 929 . 2SA1015 2SA990


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1038 2sa949
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB561 TRANSISTOR (PNP) 1. EMITTER FEATURES Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -700 mA PC Collector


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PDF 2SB561 othe25
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