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2SB1424T100Q ROHM Semiconductor Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, SC-62, 3 PIN
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2SB1424 datasheet (18)

Part Manufacturer Description Type PDF
2SB1424 Kexin Low VCE(sat) Transistor Original PDF
2SB1424 ROHM Low VCE(sat) Transistor (-20V, -3A) Original PDF
2SB1424 ROHM Original PDF
2SB1424 Transys Electronics Plastic-Encapsulate Transistors Original PDF
2SB1424 TY Semiconductor Low VCE(sat) Transistor - SOT-89 Original PDF
2SB1424 Weitron Epitaxial Planar PNP Transistors Original PDF
2SB1424 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1424 Others Transistor Substitution Data Book 1993 Scan PDF
2SB1424 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1424 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB1424 Others Japanese Transistor Cross References (2S) Scan PDF
2SB1424 ROHM Transistor Selection Guide Scan PDF
2SB1424Q ROHM Transistors Original PDF
2SB1424R ROHM Low VCE(sat) Transistor (-20V, -3A) Original PDF
2SB1424T100Q ROHM Low Vce (sat) Transistor (-20 V, -3 A) Original PDF
2SB1424T100Q ROHM TRANSISTOR PNP 20V 3A SO-89 Original PDF
2SB1424T100R ROHM Low Vce (sat) Transistor (-20 V, -3 A) Original PDF
2SB1424T100R ROHM TRANSISTOR PNP 20V 3A MPT3 Original PDF

2SB1424 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: 2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S , characteristics. 3) Complements the 2SD2150 / 2SC4115S. zExternal dimensions (Unit : mm) 2SB1424 0.5±0.1 0.2 , Collector-emitter voltage Emitter-base voltage 2SB1424 Collector current 2SA1585S ICP Collector power dissipation 2SB1424 2SA1585S PC Tj Tstg Symbol VCBO VCEO VEBO IC Limits -20 -20 -6 -3 -2 -5 0.5 0.4 150 -55 to 150 , =10ms Rev.A 1/3 2SB1424 / 2SA1585S Transistors zElectrical characteristics (Ta=25°C) Parameter


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PDF 2SB1424 2SA1585S 2SD2150 2SC4115S. 2SB1424 15Min. SC-62
2008 - 2SB1424

Abstract: No abstract text available
Text: current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A) Lead-free: 2SB1424L Halogen-free: 2SB1424G ORDERING INFORMATION Normal 2SB1424-x-AB3-R Ordering Number Lead Free 2SB1424L-x-AB3-R Halogen Free 2SB1424G-x-AB3-R www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd , UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE(SAT) PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type


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PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044
q401 transistor

Abstract: No abstract text available
Text: Transistors 2SB1424 / 2SA1585S ·Fe a tu re s 1) LOW VcE(sat). VcE(sat) = -0 .2 V (Typ.) (Ic /Ib , (Ta = 25"C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 2SB1424 , 5 -1 5 0 Unit V V V A A (Pulse) * W "C t Collector power dissipation 2SB1424 2SA1585S Pc , Output capacitance · P a c k a g in g specifications and Package Code Type 2SA1585S 2SB1424 Hf e fa s 2SB1424 /2SA1585S Symbol BV cbo BV ceo BV ebo ICBO Ie b q V c e (sat) tlFE Min. -2 0 -2 0 -6 - -


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PDF 2SB1424 2SA1585S 2SD2150/ 2SC4115S. 2SS1424 SC-62 SC-72 2SB1424/2SA1585S q401 transistor
2008 - Not Available

Abstract: No abstract text available
Text: )/(-0.1A) Lead-free: 2SB1424L Halogen-free: 2SB1424G ̈ ORDERI N G I N FORM AT I ON Normal 2SB1424-x-AB3-R Ordering Number Lead Free 2SB1424L-x-AB3-R Halogen Free 2SB1424G-x-AB3-R , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB1424 LOW ̈ Preliminary V CE(SAT ) PNP SILICON TRANSISTOR T RAN SI ST OR DESCRI PT I ON As the UTC PNP silicon transistor, the 2SB1424 , C E Packing Tape Reel 1 of 2 QW-R208-044,a 2SB1424 ̈ Preliminary PNP SILICON


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PDF 2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044
transistor QB

Abstract: PNP TRANSISTOR SOT89
Text: 2SB1424 Transistor, PNP Features · · · available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SB1424 ; A E *, where is hFE code low collector saturation voltage, typically VCE(sat) = , amplifier Dimensions (Units : mm) 2SB1424 (MPT3) +0 2 4 . 5 - 0.1 1 .6* 01 = E . TT 0.1 ( 0 , (3) Emitter Surface Mount Transistors noH m 153 2SB1424 Transistor, PNP, 2SB series , R 18 0 -3 9 0 154 RONffl Surface Mount Transistors Transistor, PNP, 2SB series 2SB1424


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PDF 2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor QB PNP TRANSISTOR SOT89
2003 - sot89 bv

Abstract: BV SOT SOT-89 2SB1424
Text: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C ABSOLUTE MAXIMUM RATINGS (Ta=25% ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base , - - -0.1 mA WEITRON http://www.weitron.com.tw 2SB1424 C ELECTRICAL , ://www.weitron.com.tw 2SB1424 ELECTRICAL CHARACTERISTIC CURVES WEITRON http://www.weitron.com.tw 2SB1424


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PDF 2SB1424 OT-89 -50mA 100MHz OT-89 500TYP sot89 bv BV SOT SOT-89 2SB1424
2003 - Not Available

Abstract: No abstract text available
Text: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C ABSOLUTE MAXIMUM RATINGS (Ta=25% ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base , - - -0.1 mA WEITRON http://www.weitron.com.tw 2SB1424 C ELECTRICAL CHARACTERISTICS , 2SB1424 ELECTRICAL CHARACTERISTIC CURVES WEITRON http://www.weitron.com.tw 2SB1424 SOT-89 Outline


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PDF 2SB1424 OT-89 -50mA 100MHz OT-89 500TYP
transistor fn 155

Abstract: No abstract text available
Text: 2SB1424 Transistor, PNP Features Dimensions (Units : mm) • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424 ; AE-fc, where ★ is hFE code â , €” 0.1 excellent current-to-gain characteristics • 2SB1424 (MPT3) (2) Collector (3) Emitter , □om?3c 12 1 i = 153 2SB1424 Transistor, PNP, 2SB series Absolute maximum ratings (Ta = 25 , 1 4 0 ■Surface Mount Transistors Transistor, PNP, 2SB series 2SB1424 Electrical


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PDF 2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor fn 155
2015 - Not Available

Abstract: No abstract text available
Text: Order Number 2SB1424G-x-AB3-R Note: Pin Assignment: B: Base C: Collector  Package SOT , UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE(SAT)  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type , Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-044.B 2SB1424  PNP SILICON , 180-390 2 of 3 QW-R208-044.B 2SB1424 PNP SILICON TRANSISTOR UTC assumes no responsibility for


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PDF 2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044
2004 - 2SA1585

Abstract: 2SA1585S 2SB1424 2SC4115S 2SD2150 SC-72 T100
Text: 2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) Structure Epitaxial , voltage VEBO -6 V 2SB1424 IC Collector current 2SA1585S ICP Collector power dissipation 2SB1424 2SA1585S PC -3 -2 -5 0.5 0.4 A A(Pulse) W Junction temperature , 1/3 +0.15 0.45 -0.05 2SB1424 / 2SA1585S Transistors Electrical characteristics (Ta


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PDF 2SB1424 2SA1585S 2SB1424 SC-62 15Min. 2SD2150 2SC4115S. 2SA1585 2SA1585S 2SC4115S SC-72 T100
1998 - sit transistor

Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Text: Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm) FStructure Epitaxial planar type , 2SB1424 / 2SA1585S FElectrical characteristics (Ta = 25_C) FPackaging specifications and fFE FElectrical characteristic curves 202 hFE values are classified as follows : Transistors 2SB1424


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PDF 2SB1424 2SA1585S 2SD2150 2SC4115S. 96-596-A74) sit transistor transistor Ic 1A datasheet transistor sit 20V3A 2SA1585S 2SC4115S A-74
1998 - Not Available

Abstract: No abstract text available
Text: Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FExternal , FElectrical characteristics (Ta = 25_C) 2SB1424 / 2SA1585S FPackaging specifications and fFE hFE values are classified as follows : FElectrical characteristic curves 202 Transistors 2SB1424


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PDF 2SB1424 2SA1585S 2SD2150 2SC4115S. 96-596-A74)
1998 - D352 transistor

Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
Text: , *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2 , _C) (96-596-A74) 201 Transistors FElectrical characteristics (Ta = 25_C) 2SB1424 / 2SA1585S , curves 202 Transistors 2SB1424 / 2SA1585S 203 Transistors 2SB1427 2SD2153 (96-148 , / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure


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PDF 2SA1759 2SC4505 2SC4620 96-97-A324) 96-178-C300) 2SA1797 2SB1443 2SC4672 96-100-B208) 96-181-D208) D352 transistor transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
2003 - Not Available

Abstract: No abstract text available
Text: = 1.4V Fig. 13 1-Cell Input 3V Output Step-Up Converter Q1 * 2SB1424 10K RILIM R5 , =4V 75 AIC1633-5 70 0 *Rohm 2SB1424 20V 3A 20 40 60 80 100 120 140 160 180 200 , n APPLICATION EXAMPLES (Continued) Q1 * 2SB1424 1K R1 100 +VOUT VIN=3V (+3V , 24K R5 CGND SGND *Rohm 2SB1424 20V 3A + LBI SW 10µF C1 R4 33K VOUT


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PDF AIC1633 200mA, AIC1633A) AIC1633 120KHz AIC1633A.
2SK1973

Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2SA103G 2S01781K 2sc4912 2SK2307
Text: 60 ( 2SD1757K 2SB1424 2SD2150 2SA1797 2SC4672 2SB1561 2S02391 2S81308 2SD1963 / 2SB1386 .2S , 2SB1561 2SD2391 2S02170 2SC4132 2SB1424 2S01963 2SD2150 2SB1386 2SD2096 in F5* (S C -6 3 ) |f


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PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2SA103G 2S01781K 2sc4912 2SK2307
2SB1424

Abstract: Medium Power Transistor AER marking
Text: 2SB1424 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 E E1 A b1 1.BASE SOT-89 2.COLLECTOR b L 3. EMITTER e1 FEATURES Dimensions In Millimeters Symbol Parameter Tamb=25 Symbol Dimensions In Inches Min Max Min Max A 1.400 1.600 , will not be informed individual Page 1 of 2 2SB1424 Elektronische Bauelemente PNP Silicon


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PDF 2SB1424 OT-89 -100mA -500mA 100MHz 01-Jun-2002 2SB1424 Medium Power Transistor AER marking
Not Available

Abstract: No abstract text available
Text: Transistors Low V c e (s a t ) Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ , voltage VcEO -2 0 V Emitter-base voltage V ebo -6 V Parameter 2SB1424 Collector current -3 Ic Icp Collector power dissipation 2SB1424 A -2 2SA1585S A , Transistors 2SB1424 /2SA1585S •E le c tric a l characteristics (Ta = 25°C) Parameter Symbol


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PDF 2SB1424 2SA1585S 2SB1424 2SD2150 2SC4115S. SC-62 SC-72 0Dlb713 -220FN
AER marking

Abstract: 2SB1424 PCM600
Text: 2SB1424 2SB1424 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25) 2 3. EMITTER Collector current ICM: -3 A Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic


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PDF 2SB1424 OT-89 -100mA -500mA, 100MHz AER marking 2SB1424 PCM600
aic1633a

Abstract: AIC1633 2sb1424 7 pin TOP switch in TO 220 type package
Text: 3V Output Step-Up Converter Q1 * 2SB1424 10K RILIM R5 ILIM/SD + 150µH L1 C2 10µF , +VIN VIN=4.5V VIN=3V 80 VIN=3.5V VIN=4V 75 AIC1633-5 70 0 *Rohm 2SB1424 20V , * 2SB1424 1K R1 100 +VOUT VIN=3V (+3V) 95 1K R2 1K R3 10µF + C2 + 82µH L1 GS SS12 D1 VIN LBO 22µF C3 LOAD 24K R5 CGND SGND *Rohm 2SB1424 20V 3A +


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PDF AIC1633 200mA, AIC1633A) AIC1633 120KHz AIC1633A. AIC1633A aic1633a 2sb1424 7 pin TOP switch in TO 220 type package
nc 555

Abstract: transistor bf 425 bf 107 a bjt 107 NE 555 datasheet 107 diode ne 555 diode transistor 3440 2SB1424
Text: SPICE PARAMETER 2SB1424 by ROHM TR Div. * Q2SB1424 PNP BJT model * Date: 2006/12/05 .MODEL Q2SB1424 PNP + IS=300.00E-15 + BF=173.95 + VAF=17.555 + IKF=13.549 + ISE=300.01E-15 + NE=1.6218 + BR=28.997 + VAR=100 + IKR=2.6599 + ISC=746.57E-15 + NC=2.5200 + NK=.85039 + RE=50.000E-3 + RB=1.3440 + RC=29.353E-3 + CJE=200.22E-12 + MJE=.34085 + CJC=107.04E-12 + MJC=.41984 + TF=425.28E-12 + XTF=11.859 + VTF=18.641 + ITF=7.9904 + TR=17.405E-9 + XTB=1.5000 -


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PDF 2SB1424 Q2SB1424 00E-15 01E-15 57E-15 000E-3 353E-3 22E-12 04E-12 nc 555 transistor bf 425 bf 107 a bjt 107 NE 555 datasheet 107 diode ne 555 diode transistor 3440 2SB1424
Not Available

Abstract: No abstract text available
Text: Product specification 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector dissipation PC 0.5 Junction temperature Tj


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PDF 2SB1424 100MHz
SMD TRANSISTOR MARKING 2A

Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a TRANSISTOR SMD 1A SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD PNP 1A
Text: Transistors SMD Type Low VCE(sat) Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector dissipation PC 0.5


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PDF 2SB1424 100MHz SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a TRANSISTOR SMD 1A SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD PNP 1A
AIC1633

Abstract: AIC1633A
Text: 1-Cell Input 3V Output Step-Up Converter Q1 * 2SB1424 10K RILIM 150µH L1 R5 ILIM/SD , *Rohm 2SB1424 20V 3A Fig. 14 20 40 60 80 100 120 140 160 180 200 220 240 Load , (Continued) Q1 * 2SB1424 1K R1 100 +VOUT (+3V) VIN=3V 95 1K R2 1K R3 10µF + C2 + 82µH L1 GS SS12 D1 VIN LBO 22µF C3 LOAD 24K R5 CGND SGND *Rohm 2SB1424 20V


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PDF AIC1633 200mA, AIC1633A) AIC1633 120KHz AIC1633A. AIC1633A
2SB1424

Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX


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PDF OT-89 2SB1424 OT-89 -100mA -500mA, 100MHz 2SB1424
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified


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PDF OT-89 2SB1424 OT-89 -100mA -500mA, 100MHz
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