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2SB1308T100R ROHM Semiconductor Si, SMALL SIGNAL TRANSISTOR
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2SB1308 datasheet (13)

Part Manufacturer Description Type PDF
2SB1308 Kexin Power Transistor Original PDF
2SB1308 ROHM Power Transistor (-50V, -3A) Original PDF
2SB1308 ROHM Power Transistor(50V, 3A) Original PDF
2SB1308 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SB1308 TY Semiconductor Power Transistor - SOT-89 Original PDF
2SB1308 Others Transistor Substitution Data Book 1993 Scan PDF
2SB1308 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1308 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB1308 Others Japanese Transistor Cross References (2S) Scan PDF
2SB1308 ROHM Transistor Selection Guide Scan PDF
2SB1308T100P ROHM Power Transistor (-50 V, -3 A) Original PDF
2SB1308T100Q ROHM Power Transistor (-50 V, -3 A) Original PDF
2SB1308T100R ROHM Power Transistor (-50 V, -3 A) Original PDF

2SB1308 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 2sb1308p

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors x · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT Case Material: Molded Plastic. UL Flammability Classification Rating


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PDF 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R 2sb1308p
2007 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features x · · · · Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT Case Material: Molded Plastic. Classification Rating 94V-0 UL


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PDF 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R
Wr1c

Abstract: No abstract text available
Text: 2SB1308. · P a c k a g in g specifications and hre Type P ac ka ge hpE M arking C ode B a sic ordering , Transistors 2SB1308 2SD1963 ·F eatu res 1 ) Low V c E ( sa i). (M a x .- 0.45Vmax. at Icyfe®5- 1.5A/- 0.15A) 2 ) Excellent D C current gain characteristics. 3 ) Complements the 2 S D 1 963. I Power Transistor (- 50V ^ -3 A ) 2SB1308 · A b so lu te maximum ratings (T a = 2 5 ` C , Junction temperature Stora ge temperature *1 SJgle pulse P w - 100m s 2SB1308 M PT3 PQR BF* T100 1000


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PDF 2SB1308 2SD1963 45Vmax. 2SB1308 Wr1c
Not Available

Abstract: No abstract text available
Text: K -7 > v ^ £ / T ransistors 2SB1308 I f c f ^ v P N P y U3> h:7>v*£ 2SB1308 1) V cE (sat)*'' '(Ê ^ 'o V c E (s a t)= - 0 .4 5 V (M ax.) Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. 2) r a « » * « * h F Evnms'&m e t iT t 'S o (IC /IB = - 1 -5 A /-0 .1 5 A ) i.e io .i -rr-i · Features 1 ) Low V c e (sat) V c e (s a t)= - 0 .4 5 V (M ax.) (lc /lB = -1 5 A /-0 .1 5 A , h 7 > v X £ /Transistors 2SB1308


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PDF 2SB1308 2SB1308 30MHz
2005 - 2SB1308

Abstract: 2SD1963 T100
Text: 2SB1308 Transistors Power transistor (-50V, -3A) 2SB1308 Features 1) Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. External dimensions (Unit : mm) MPT3 0.5 4.5 1.6 2.5 4.0 , = -20V, IE=0A, f=1MHz Measured using pulse current. Rev.A 1/2 2SB1308 Transistors Packaging specifications and hFE Type 2SB1308 Package MPT3 hFE PQR Marking BF Code


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PDF 2SB1308 2SD1963. 2SB1308 2SD1963 T100
2008 - MCC BFR

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features · · · · · · · Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction


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PDF 2SB1308-P 2SB1308-Q 2SB1308-R MCC BFR
BFr pnp transistor

Abstract: 2SB1308
Text: 2SB1308 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25) -3 2. COLLECTOR 1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic


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PDF 2SB1308 OT-89 -50mA 30MHz BFr pnp transistor 2SB1308
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors x · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0


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PDF 2SB1308-P 2SB1308-Q 2SB1308-R -20rrections,
2008 - MCC BFR

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25ć) Collector current: ICM = -3A Collector-base


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PDF 2SB1308-P 2SB1308-Q 2SB1308-R OT-89 MCC BFR
2SB1308

Abstract: No abstract text available
Text: h -7 > y 7 $ /Transistors 2SB1308 2SB1308 I VZ^VTfr-fU-l-M PNP Epitaxial Planar PNP Silicon Transistor tëJii&iîMgfll/Low Freq. Power Amp. • ttft 1) VcEfsat)*?®^« VcE(sat)=-0.45V (Max.) (Ic/Ib=-1-5A/-0.15A) 2) hFE ««^ÎÎtÎ^ff • Features 1) LowVcE(sat) VCE (sat)=-0.45V (Max.) (IC/lB=-1-5A/-0.15A) 2) Excellent current characteristics of DC current amplification factor hFE • ftJ&Tf&BI/Dimensions (Unit : mm) I.6Î0.I -m ■mm J0.5±0.l m i^i CD (2) Collector (3) Emitter ROHM : MPT EIAJ : SC-62 «ÉPM0


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PDF 2SB1308 SC-62 30MHz 001013b
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR (PNP) 1. BASE FEATURES Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 , -1.5mA -500 2SB1308 -0.6mA -200 -0.45mA Ta=25℃ 300 -0.3mA -100 IB=-0.15mA -0 -1


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PDF OT-89-3L OT-89-3L 2SB1308
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1308-P 2SB1308-Q 2SB1308-R   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25ć) Collector current: ICM = -3A Collector-base


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PDF 2SB1308-P 2SB1308-Q 2SB1308-R OT-89
2008 - 2SB1308Q

Abstract: 2sb1308r MCC BFR
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors x · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0


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PDF 2SB1308-P 2SB1308-Q 2SB1308-R 2SB1308Q 2sb1308r MCC BFR
2SB1308

Abstract: BJT BF 167
Text: SPICE PARAMETER 2SB1308 by ROHM TR Div. * Q2SB1308 PNP BJT model * Date: 2006/11/14 .MODEL Q2SB1308 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369 + RE=17.000E-3 + RB=.4 + RC=35.569E-3 + CJE=559.05E-12 + MJE=.3951 + CJC=152.17E-12 + MJC=.28029 + TF=715.49E-12 + XTF=327.81 + VTF=51.553 + ITF=55.906 + TR=9.7739E-9 + XTB=1.5000 -


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PDF 2SB1308 Q2SB1308 00E-15 4533E-12 000E-3 569E-3 05E-12 17E-12 2SB1308 BJT BF 167
1998 - B204

Abstract: 2SB1308 2SD1963 rohm d204 D204
Text: Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered


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PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) B204 2SB1308 2SD1963 rohm d204 D204
Not Available

Abstract: No abstract text available
Text: Product specification 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector current(Pulse) Collector power dissipation PC 0.5


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PDF 2SB1308 100MHz
Not Available

Abstract: No abstract text available
Text: MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE SOT-89 FM120-M+ 2SB1308 THRU FM1200-M , Characteristics 1000 FE FM120-M+ 2SB1308 THRU FM1200-M+ C Pb Free Product - I Packagehoutline · , process design, excellent power dissipation offers WILLAS FM120-M+ 2SB1308 THRU FM1200-M+ Pb Free


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PDF OT-89 060TYP FM140-MH FM150-MH FM160-MH M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH
2004 - Not Available

Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W(Tamb=25℃) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55℃ to + 150℃ Electrical Characteristics @ 25℃ Unless Otherwise Specified Symbol VCEO VCBO VEBO ICBO IEBO hFE VCE(sat) fT


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PDF 2SB1308 OT-89
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
Text: ✓ ¥ 2SA1314 2SB1518 2SB1073 2SA1363 2SB1308 2S8 1121-' ¥ 2SA1314 2SB1518 2SB1073


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR (PNP) 1. BASE FEATURES Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC


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PDF OT-89-3L OT-89-3L 2SB1308 -50mA, 30MHz
2SA933S

Abstract: 2SB737 2sb1425 2SA1302 TOSHIBA 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
Text: 2SB1198K 2SB1308 2SA1596 2SA 1306 . 2SA 1306A 9SA 1306R 2 S A 1307 2SA 1308 2SA 1309 , 2SA 1309A 2 SA


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PDF 2SA1285 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289 2SA1208 2SA1770 2SA1145 2SA933S 2SB737 2sb1425 2SA1302 TOSHIBA 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
1998 - 2SD1963

Abstract: B204 2SB1308 94S-166-B204 D204
Text: Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 ROHM


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PDF 2SB1308 2SD1963 94S-166-B204) 94S-342-D204) 2SD1963 B204 2SB1308 94S-166-B204 D204
2004 - 2SB1308

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25) -3 2. COLLECTOR 1 A -30 3. EMITTER 2 3 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions


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PDF OT-89 2SB1308 OT-89 -50ollector-base -50mA 30MHz 2SB1308
2004 - MCC BFR

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308 · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Parameter Collector-Emitter Voltage (IC=-50A, IE=0) Collector-Base Voltage (IC=-1mA, IB=0) Emitter-Base Voltage (IE=-50A, IC=0) Collector cut-off Current (VCB=-20V, IE=0) Emitter cut-off


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PDF 2SB1308 -50Adc 30MHz) OT-89 MCC BFR
SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
Text: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector current(Pulse) Collector power


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PDF 2SB1308 100MHz SMD TRANSISTOR MARKING BF bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
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