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2SB1188T100Q ROHM Semiconductor Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, SC-62, 3 PIN
2SB1188T100R ROHM Semiconductor Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, MPT3, SC-62, 3 PIN
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2SB1188T100Q ROHM Semiconductor Farnell element14 1,307 £0.39 £0.16
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2SB1188T100R ROHM Semiconductor Bristol Electronics 263 - -
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2SB1188 datasheet (26)

Part Manufacturer Description Type PDF
2SB1188 Kexin Medium Power Transistor Original PDF
2SB1188 ROHM Medium power Transistor(- 32V, -2A) Original PDF
2SB1188 ROHM Medium power transistor (-32V, -2A) Original PDF
2SB1188 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SB1188 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
2SB1188 Unisonic Technologies MEDIUM POWER LOW VOLTAGE TRANSISTOR Original PDF
2SB1188 Weitron Epitaxial Planar PNP Transistors Original PDF
2SB1188 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1188 Others Transistor Substitution Data Book 1993 Scan PDF
2SB1188 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1188 Others Japanese Transistor Cross References (2S) Scan PDF
2SB1188 ROHM Transistor Selection Guide Scan PDF
2SB1188 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
2SB1188 ROHM MEDIUM POWER TRANSISTOR(-32V, -2A) Scan PDF
2SB1188L-x-AB3-R Unisonic Technologies MEDIUM POWER LOW VOLTAGE TRANSISTOR Original PDF
2SB1188P ROHM Medium Power Transistor (-32V -2A) Scan PDF
2SB1188-P-AB3-R Unisonic Technologies MEDIUM POWER LOW VOLTAGE TRANSISTOR Original PDF
2SB1188Q ROHM Medium Power Transistor (-32V -2A) Scan PDF
2SB1188R ROHM Medium Power Transistor (-32V -2A) Scan PDF
2SB1188T100P ROHM TRANS DVR PNP 32V 2A SOT-89 TR Original PDF

2SB1188 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2SB1188

Abstract: No abstract text available
Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (-32V, -2A) 2SB1188 / 2SB1182 , 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SB1188 0.5±0.1 2SB1182 1.5±0.3 0.2 , 0.5 PC 2 10 1 Tj Tstg 150 -55~+150 Unit V V V A(DC) A(Pulse) 1 W W 2 2SB1188 Collector power , , collector copper plating 100mm2 or larger. 2.5 2SB1188 / 2SB1182 / 2SB1240 Transistors !Electrical , =-10V, IE=0A, f=1MHz !Packaging specifications and hFE Package Code Type 2SB1188 2SB1182 2SB1240


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PDF 2SB1188 2SB1182 2SB1240 2SD1766 2SD1758 2SD1862 2SB1188
1998 - transistor

Abstract: 2sb1240 SD1227 2SD1189F 2SB1277 2SB822 transistor 2SB1240 2SB1182 2SB1188 silicon pnp transistor
Text: Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the , maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) 216 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M Transistors 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 , characteristic curves 217 Transistors 218 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M


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PDF 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M 2SD1766 2SD1758 2SD1862 2SD1189F transistor SD1227 transistor 2SB1240 silicon pnp transistor
Not Available

Abstract: No abstract text available
Text: (MPT, SOT-89, SC-62) package • package marking: 2SB1188 ; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c *0'2 4.5 -0.1 1. 6 collector power dissipation, Pc = 2 W , – 7a2flni Qom 7ib Surface Mount Transistors bEi ■Transistor, PNP, 2SB series 2SB1188 , (S' 3 c < D G d < DC CURRENT GAIN : hFE 2SB1188 COLLECTOR CURRENT : lc (mA) DC CURRENT GAIN : hF E C O L L E C T O R C U R R E N T : lc (A) Transistor, PNP, 2SB series 2SB1188


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PDF OT-89, SC-62) 2SB1188; 2SB1188 2SD1766
d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Text: ^External dim ensions (Units: m m ) 2SB1188 + o 4 -5 + O f 1.6 ± 0.1 VcElsat; = -0 .5 V (Typ.) (Ic , Collector current Symbol V cbo VCEO V ebo Ic 2SB1188 /2SB1182/2SB1240/2SB891 F/ 2SB822/2SB1277/2SB911M Limits -4 0 -3 2 -5 -2 Unit V V V A (DC) A (Pulse) * 1 W -3 0.5 2SB1188 2 *2 2SB1182 , voltage 2SB1188 ,2SB1182 82 DC current transfer ratio 2SB1240.2SB891F hFE Symbol BV cbo BV ceo B V ebo , hFE Package Code Type 2SB1188 2SB1182 2SB1240 2SB891F 2SB822 2SB1277 2SB911M hFE 2SB1188 /2SB1182


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PDF 2SB1188 2SB1182 2SB1188) 2SB1182) 2SB891) 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SB891 d1189f 2SB891 d1758 2SB891F 2sb1188 2sb1277
2004 - 2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (-32V, -2A) 2SB1188 / 2SB1182 , 1.6±0.1 2.5 0.5±0.1 +0.2 4.5-0.1 1.5±0.3 2SB1188 4.0±0.3 Features 1) Low VCE(sat). , A(DC) IC Collector current 0.5 2SB1188 Collector power dissipation -3 A (Pulse)1 , plating 100mm2 or larger. Rev.A 1/3 2SB1188 / 2SB1182 / 2SB1240 Transistors Electrical , . Packaging specifications and hFE Package Taping Code Type hFE 2SB1188 T100 TL TV2


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PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SB1240 transistor 2SB1240 2SD1862 T100
2SB1188

Abstract: No abstract text available
Text: 2SB1188 PNP Silicon Medium Power Transistor Elektronische Bauelemente SOT-89 Description The 2SB1188 is designed for medium power amplifier applications. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER Features * Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) * RoHS Compliant Product REF. A B C D E F Millimeter Min. 4.4 4.05 1.50 1.30 2.40 0.89 Max. 4.6 , individual Page 1 of 2 2SB1188 Elektronische Bauelemente PNP Silicon Medium Power Transistor


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PDF 2SB1188 OT-89 2SB1188 -50uA -200mA -500mA -500mA, 30MHz 04-Apr-2007
2009 - 2SB1188L-x-AB3-R

Abstract: 2sb118 2SB1188
Text: saturation voltage SOT-89 Lead-free: 2SB1188L Halogen-free: 2SB1188G ORDERING INFORMATION Normal 2SB1188-x-AB3-R Ordering Number Lead Free Plating 2SB1188L-x-AB3-R Halogen Free 2SB1188G-x-AB3-R , UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power , C E Packing Tape Reel 1 of 4 QW-R208-041.B 2SB1188 PNP SILICON TRANSISTOR


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PDF 2SB1188 2SB1188 OT-89 2SB1188L 2SB1188G 2SB1188-x-AB3-R 2SB1188L-x-AB3-R 2SB1188G-x-AB3-R QW-R208-041 2SB1188L-x-AB3-R 2sb118
2015 - Not Available

Abstract: No abstract text available
Text: Note:  2SB1188G-x-AB3-R Pin Assignment: B: Base C: Collector Package SOT-89 Pin , UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION  The UTC 2SB1188 is a medium power low voltage transistor, designed for , © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-041.C 2SB1188  PNP SILICON , -041.C 2SB1188 ■PNP SILICON TRANSISTOR TYPICAL CHARACTERICS Static Characteristics Derating Curve


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PDF 2SB1188 2SB1188 OT-89 2SB1188G-x-AB3-R QW-R208-041
2SB1188-R

Abstract: 2SB1188 SOT MARKING 2A
Text: Product-Rank 2SB1188-P 2SB1188-Q 2SB1188-R Range 82~180 120~270 BCP BCQ BCR K , 2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 FEATURES 2 3 A E Low collector , . Page 1 of 2 2SB1188 Elektronische Bauelemente -2A, -40V PNP Silicon Medium Power Transistor


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PDF 2SB1188 OT-89 2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R -200mA -500mA -500mA, 2SB1188-R SOT MARKING 2A
2001 - 2sb1240

Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (-32V, -2A) 2SB1188 / 2SB1182 , 2SB1188 dissipation 6.5±0.2 5.1+0.2 -0.1 5.5+0.3 -0.1 1.6±0.1 (1) !Structure Epitaxial , -0.1 1.5±0.3 2SB1188 0.9 !Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A , ) Collector (3) Emitter 2SB1188 / 2SB1182 / 2SB1240 Transistors !Electrical characteristics (Ta , Package Taping Code Type hFE 2SB1188 T100 TL TV2 Basic ordering unit (pieces


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PDF 2SB1188 2SB1182 2SB1240 2SB1182 SC-62 SC-63 2sb1240 2sb118 2SD1758 2SD1766 2SD1862 T100
1998 - TRANSISTOR D400

Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
Text: ) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ , ) (96-131-B24) 215 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1188 / 2SB1182 / 2SB1240 , specifications and hFE 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M hFE values are classified as follows : FElectrical characteristic curves 217 Transistors 2SB1188 / 2SB1182 , VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240


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PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2SB911 high hfe transistor 2sd2166 Transistor PNP VCEO 400V
2SB891

Abstract: 2SB1240 BC 390 Transistor TO-126F 2SD1766 2SB891F 2SB1188 2SB1182 2SB911 1-02R
Text: €”2A/—0.2A * DC current 2SB1188.2SB1182 2SB1240.2SB891 F hFE 82 — 390 * Vce=—3V, lo=â , Transistors Medium power Transistor(-32V, -2A) 2SB1188 /2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277 , silicon transistor •External dimensions (Units: mm) 2SB1188 2SB1182 1.6±0.1 r—i -m (l)li](2)liJ , 196 _7ß2ßcicn DDlböhl 330 RDHfTI (96-131-B24) Transistors 2SB1188 /2SB1182/2SB1240/2SB891 F , Collector current Ic -2 A (DC) -3 A (Pulse) * 1 2SB1188 0.5 W *2 2 Collector power dissipation


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PDF 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD19192/SD1227M. 2SB1188 2SB1182 SC-62 2SB1240 2SB891F 2SB891 2SB1240 BC 390 Transistor TO-126F 2SD1766 2SB891F 2SB1188 2SB1182 2SB911 1-02R
2009 - 2SB1240

Abstract: 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Text: Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 , -0.1 4.0±0.3 0.5±0.1 4.5+0.2 -0.1 1.5±0.3 2SB1188 0.9 Features 1) Low VCE(sat). , W 2 W 2SB1182 10 W (Tc=25°C) 2SB1240 1 W 2SB1188 Collector power , ., Ltd. All rights reserved. 1/3 2009.12 - Rev.B 2SB1188 / 2SB1182 / 2SB1240 Data Sheet , TL TV2 Basic ordering unit (pieces) 1000 2500 2500 - - 2SB1188 QR


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PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SD1862. R0039A 2SB1240 2SD1862 T100
2007 - 2sb1188

Abstract: 2SB1188R
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -40V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Parameter Collector-Emitter Breakdown Voltage mA, IB=0) (IC=-1 Collector-Base Breakdown Voltage (IC=-50A, IE=0) Emitter-Base


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PDF 2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R 30MHZ) OT-89 2SB1188R
transistor bc 132

Abstract: B1188 BC transistor series
Text: 2SB1188 Transistor, PNP Features Dimensions (Units : mm) · · · available in MPT3 (MPT, SOT-89, SC-62)package package marking: 2SB1188 ; BC^, where is hFE code collector power , , typically V CE(sat) = -0.2 V for Ic /Ib = -1 A/- 0.1 A 2SB1188 (MPT3) 0.2 4.5 _ o . i 1 .6 * 0 1 , Surface Mount Transistors Transistor, P N P , 2 S B series 2SB1188 -5V - 10 100 E M I T T , Code Basic order quantity 2SB1188 Tape T100 1000 = Standard, = Semi-standard, * = Special order


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PDF 2SB1188 OT-89, SC-62 2SB1188; 2SD1766 2SB1188 transistor bc 132 B1188 BC transistor series
2005 - 2SB1188 SOT89

Abstract: 2sb118 2SB1188
Text: *Low saturation voltage SOT-89 *Pb-free plating product number: 2SB1188L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1188-x-AB3-R 2SB1188L-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel 2SB1188L-x-AB3-R (1)Packing Type (1) R: Tape Reel , UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC 2SB1188 is a medium power low voltage transistor, designed for audio


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PDF 2SB1188 2SB1188 OT-89 2SB1188L 2SB1188-x-AB3-R 2SB1188L-x-AB3-R QW-R208-041 2SB1188 SOT89 2sb118
2004 - 2SB1188

Abstract: No abstract text available
Text: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 , http://www.weitron.com.tw Unit 2SB1188 C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise , WEITRON http://www.weitron.com.tw 2SB1188 ELECTRICAL CHARACTERISTIC CURVES -0.5 C OLLE C T OR C , ATION VOLTAG E : V B E (sat) (V) 2SB1188 T a =25 C V C E =-5V 500 200 100 50 -500 , 2SB1188 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON


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PDF 2SB1188 OT-89 100ms -50uA) OT-89 500TYP 2SB1188
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Features · · · · · Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -40V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Parameter Collector-Emitter


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PDF 2SB1188-P 2SB1188-Q 2SB1188-R
LT 500-t

Abstract: 2SB1188
Text: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 , http://www.weitron.com.tw Unit 2SB1188 C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise , WEITRON http://www.weitron.com.tw 2SB1188 ELECTRICAL CHARACTERISTIC CURVES -0.5 C OLLE C T OR C , ATION VOLTAG E : V B E (sat) (V) 2SB1188 T a =25 C V C E =-5V 500 200 100 50 -500 , 2SB1188 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON


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PDF 2SB1188 OT-89 100ms -50uA) OT-89 500TYP LT 500-t 2SB1188
Not Available

Abstract: No abstract text available
Text: h 7 > y ^ ^ / T ransistors 2SB1188 2SB1188 · Power Amp. Epitaxial Planar PNP Silicon Transistor ii-J fi^ > il2 l/D im e n s io n s ( U n it: m m ) 1) = I U 7 ^ i i ^ P c = 2 W T i » - 5 o (4 0 X 4 0 X 0 .7mm-tz 7 S. > 9 S t S f if f lB # ) 2) L o w V ce ( sat ) = - 0 .2 V (Typ.) a t IC , - 270 R 180-390 286 RDHm h /Transistors 2SB1188 ^ A S fr C DC / 5N > Vf>J Ví V ' vJi t , t ip F ) 2SB1188


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PDF 2SB1188 /--500m --10V,
2007 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors · · · · Features Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -40V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Parameter Collector-Emitter Breakdown Voltage mA, IB=0) (IC=-1 Collector-Base Breakdown Voltage (IC=-50A, IE=0) Emitter-Base


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PDF 2SB1188-P 2SB1188-Q 2SB1188-R
2004 - Not Available

Abstract: No abstract text available
Text: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead(Pb)-Free 1 1. BASE 2 , -1 uA WEITRON http://www.weitron.com.tw Unit 2SB1188 C ELECTRICAL CHARACTERISTICS (Ta , 180-390 WEITRON http://www.weitron.com.tw 2SB1188 ELECTRICAL CHARACTERISTIC CURVES -0.5 C OLLE , ATION VOLTAG E : V B E (sat) (V) 2SB1188 T a =25 C V C E =-5V 500 200 100 50 -500 , 2SB1188 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON


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PDF 2SB1188 OT-89 100ms -50uA) OT-89 500TYP
1998 - D352 transistor

Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
Text: ) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ , ) (96-131-B24) 215 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1188 / 2SB1182 / 2SB1240 , specifications and hFE 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M hFE values are classified as follows : FElectrical characteristic curves 217 Transistors 2SB1188 / 2SB1182 , FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182


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PDF 2SA1759 2SC4505 2SC4620 96-97-A324) 96-178-C300) 2SA1797 2SB1443 2SC4672 96-100-B208) 96-181-D208) D352 transistor transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 96-596-A74 9697a transistor D212
2008 - 2SB1188-R

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors · Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -40V Operating and storage junction temperature


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PDF 2SB1188-P 2SB1188-Q 2SB1188-R
2008 - 2SB1188-Q

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Features · · · · · Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Power dissipation: PCM = 0.5W(Tamb=25) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -40V Operating and storage junction temperature range TJ, Tstg: -55 to + 150 Parameter Collector-Emitter


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PDF 2SB1188-P 2SB1188-Q 2SB1188-R
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