The Datasheet Archive

2SB1187 datasheet (7)

Part Manufacturer Description Type PDF
2SB1187 Jmnic Silicon Power Transistors Original PDF
2SB1187 Various Russian Datasheets Transistor Original PDF
2SB1187 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1187 Others Transistor Substitution Data Book 1993 Scan PDF
2SB1187 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB1187 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1187 Others Japanese Transistor Cross References (2S) Scan PDF

2SB1187 Datasheets Context Search

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2SB1187

Abstract: 2SD1761 Silicon Power Transistors
Text: Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING , 2SB1187 Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , UNIT 320 Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors PACKAGE


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PDF 2SB1187 O-220Fa 2SD1761 O-220Fa) 2SB1187 2SD1761 Silicon Power Transistors
2SB1187

Abstract: 2SB1187 transistor 2SD1761
Text: h7 > y 2 S B 1 /Transistors 2SB1187 '> u = i> 1 8 7 1BJiil£1t:fr^1iffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor · tftjk 1) Pc = 3 0 W (T c = 2 5 "C ) 2) A S O A ^ jK l'o · f t f f M & H / D im e n s io n s (U n it: mm) S i > 4 V; v \J l-7- 3) 2SD1761 4) 7 - , 2 0 noH m 283 h ~7 > V X $ /T r a n s is to r s 2SB1187 1 m m m T JU , ) F ig 6 IJ 284 noN m N" 7 >v7> £ /Transistors 2SB1187 ^ A s a -ro W M K 'X ^ i- r


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PDF 2SB1187 2SD1761 2SD1761. 2SB1187 2SB1187 transistor
2SB1187

Abstract: 2SD1761 2sb118
Text: SavantIC Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier , Specification 2SB1187 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , :±0.15 mm) 3 2SB1187 -


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PDF 2SB1187 O-220Fa 2SD1761 2SB1187 2SD1761 2sb118
2005 - 2SD1761

Abstract: 2SB1187
Text: JMnic Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING , 2SB1187 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , pF 2 MIN TYP. 60 MAX UNIT 320 JMnic Product Specification 2SB1187


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PDF 2SB1187 O-220Fa 2SD1761 2SD1761 2SB1187
2SB1187

Abstract: 2SD1761
Text: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier , ~150 Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power , Specification 2SB1187 Silicon Power Transistors PACKAGE OUTLINE OND IC TOR UC SEM


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PDF 2SB1187 O-220Fa 2SD1761 2SB1187 2SD1761
2SB1187

Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD -h "7 > v 7, £/Transistors 4QE D 7020=1=1=1 ODDSSfll 3 ESRHN 2SB1187 - 7^31-11 fi^sftS^jiSififfl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • Wfi\|">i@/Dimensions (Unit: mm) • «ft 1) Pc=30W(Tc=25°C) 2) 3) 2SD1761t=l>yjT'i>5o 4) », Mf&mttDmm*®^ • Features 1) Large collector , 2SB1187 ^ÄSlJittiffl^/Electrical Characteristic Curves T-33-19 40 3 30 CL CO Q a. uj ä 20 10 1mm , ■yftíiteítííiwm 284 RDHm ROHM CO LTD /Transistors MOE D B TflSfl'm DOaSSfla 7 HRHil 2SB1187 -10 -2 -1 -0.5 -0.2


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PDF 2SB1187 2SD1761t 2SD1761. O-22QFP 2SD1761 2SB1187 transistor
2SD2061

Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061
Text: h "7 > y X $ /Transistors 2SD2061 2SD2061 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor 1) Vce (sat) ^ft^o VcE(sat)=0.3V (Typ.) IC/lB=2A/0.2A 2) hFE (nn-tarn* nti^» 3) 3 2 PC=30W (Tc=25*C)o 4) ASO 5) 2SB1187 7'l>IT'i.5o 6) 7-r KTSoTl^t», 7) PCMax^2W(Ta=25'C)t±tt^ t Features 1) Low VcE(sat) VcE(sat)=0.3V (Typ.) IC/lB=2A/0.2A 2) Excellent current characteristics of DC , ) Complementary to 2SB1187 6) Easy insulation from the heat dissipation plate as the fin is molded 7) PcMax as


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PDF 2SD2061 2SB1187 A/02A 2SD2061 2SB1187 2SB1187 transistor transistor 2sd2061
2sd1761

Abstract: No abstract text available
Text: 2SD1761(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC pC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power


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PDF 2SD1761 O-220F O-220F 2SB1187
2SB1187

Abstract: 2SB1187 transistor 2SD1761
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww w VCBO , Silicon PNP Power Transistor 2SB1187 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified


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PDF 2SB1187 2SD1761 2SB1187 2SB1187 transistor 2SD1761
2SB1335A

Abstract: 2SD2037 2SD2061 2SD2033 2SB1359 2sb1357 2sd2041 28c43 2SD2096 2SD1832
Text: 2SD2037 2SB1357 H Z ULI cc cc D O tr o h-o LU o o 2SD2023 2SB1033 2SD1943 2SD2061 2SB1187 2SD1944 , -220 TO-220FP HRT Vce(V) lc(A) 2SA1634 2SA163S — Driver -80 -4 40 30 — 60-320 -4 -1 2SB1033 2SB1187


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PDF 3SK212 O-220, O-220FP, 2SD1562 2SB1085 2SD1763 2SB1186 2SD2033 2SB1353 2SD1562A 2SB1335A 2SD2037 2SD2061 2SB1359 2sb1357 2sd2041 28c43 2SD2096 2SD1832
2SB1187

Abstract: 2SD1761 2SB1187 transistor
Text: current gain. 3) Large collector power dissipation: PC=30W (Tc=25°C) 4) Complementary pair with 2SB1187. · , 3) PC= 3 0 W (Tc=25°C)0 5 o 4) 2SB1187 i; U > / 'J T' · Features 1) Low collector saturation


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PDF 2SD1761 2SB1187 2SB1187. 2SD1761 2SB1187 transistor
2s8698

Abstract: 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
Text: - 10 - * * * * * * * * * ♦ * ♦ * * ♦ * * * * a « Type No. tt € Manuf. H * SANYO Ä 3E TOSHIBA NEC a i HITACHI * ± a FUJITSU fö T MATSUSHITA - a MITSUBISHI □ — A ROHM 2SA 633 b a 2SB632 ¿.OÄ473 2SA715 2SA699 2SB1064 2SA 634 a a 2SB632 2SA473 2SA715 2SB1064 2SA 635 a a 2SB631 2SA715 2SA699A 2SB1064 2SA 636 a a 2SB824 2SA715 2SB1064 2SA 636A < a a 2SB834 2SA699A 2SB1187 2SA 637 85 T 2SA1018 2SA821 2SA 638 B ™ 2SA1207 2SA778(X) 2SA921 2SA821


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PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
2SB1220

Abstract: 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1186 2SB1184 2SD1812 2SB1204
Text: 200 -5 -0.1 -2 -1.5 -1 -0.1 2sb1187 O-A LF PA -60 -60 -3 30 -10 -bU 60 320 -5 -0. 5 -2 -2 -0.2 , * 2SD1761 (TO-220FP) BCE 2SB1187 100* -5 -0.5 50* 2SD1766 SC—62 ECB 2SB1188 100* -10 -0.05 14


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PDF 2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SB1220 2sb1216 2SD1761 2SB1190A 2SB1189 2SB1208 2SB1204
2S01761

Abstract: 2SB1187 2SD1761 T0220FP
Text: h-7 >it* 9 /Transistors 2SBÎ187 2SB1187 • H* 1) PC-30W(TC-25T:)£:*?V», 3) 2S01761 4) KTBoTi* • Features 1) LafQ« collector dissipation PC=30W fTc-25°C) 2) Wide ASO 3) Complementary pair *ntti 2SD1761 4) Full-moid covered fm enables easy insulation from neat sink Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • Dimension« (Unil: mm) T0220FP • lftii«*g«/Absohjte Maximum Ratings (Ta=25C) Parameter Symtx* Lkiwift Un« -"i-xmis Vcoo -60 V 31/75 - 1Î7?IW5 Veto -«0 V


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PDF 2SB1187 PC-30W TC-25T: 2S01761 fTc-25Â 2SD1761 T0220FP --60V A/-02A -2A/-02A 2S01761 2SB1187 2SD1761 T0220FP
2SD1761

Abstract: 2SB1187 2sb118
Text: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO


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PDF 2SD1761 O-220Fa 2SB1187 O-220Fa) 2SD1761 2SB1187 2sb118
2010 - 2S8834

Abstract: 2S8834 NEC 2S8941 B0180 B0936 2S8505 S570G 2S8906 2SB1094L 2SB834Y
Text: 2S81094M 043C8 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A 2S8744A 2SB834Y 2S8906Y 2S81094K 2SB12S1Z 2SA1258 KT81SV PTC111


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PDF
2007 - 2SD1761

Abstract: 2SB1187
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80


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PDF O-220F 2SD1761 O-220F 2SB1187 2SD1761 2SB1187
2SD1761

Abstract: 2SB1187
Text: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO


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PDF 2SD1761 O-220Fa 2SB1187 O-220Fa) 2SD1761 2SB1187
2SD1761

Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
Text: b 7 > is * 9 /Transistors 2SD1761 2SD1761 • Wft 1) Vci(«,-03V(Typ) LC*. (at lc /ie*=2A/0 2A) 2) 3) PC=30W Tc-25X:L • Features 1) Lo* collector saturation voltage Vc*«q=0 3V (Typ). lc/l«=2A/0 2A 2) Excellent current characteristic* of DC current gain 3} Large collector dissipation PC=30W (Tc*"25*C) 4) Complementary pair with 2SB1187 • / Absolute Maximum Ratings (Ta = 25C) Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • £11; <£09/Dimensions (Unit: mm


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PDF 2SD1761 Tc-25X 2SB1187 09/Dimensions -55-ISO lc/le-2A/02A /1C-3V/05A 2SD1781 2SD1761 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
2sd1761

Abstract: No abstract text available
Text: 2SB1187. • Absolute Maximum Ratings (Ta=25"C) Parameter Symbol Limits Unit VcBO 80


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PDF 2SD1761 2SB1187. 2sd1761
2sd2061

Abstract: No abstract text available
Text: 5) 2SB11871 = > y j ? £ > 3 „ 1 6) 7) P c M a x t f ''2 W ( T a = 2 5 ° C ) £ ± y '0 â , =25°C ) 4) W ide ASO 5) Complementary to 2SB1187 6) Easy insulation from the heat dis­ sipation plate as


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PDF 2SD2061 2SB11871 2sd2061
2sd2061

Abstract: No abstract text available
Text: =30W (T c = 2 5 ‘C) 4) W ide ASO 5) Complementary to 2SB1187 6) Easy Insulation from the heat disÂ


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PDF 0Q0b037 O-220FP 2SD2061 HU-72-I 2sd2061
2SD2010

Abstract: 2SD2008 2SD2006 2Sb1333 2SD2004 2SD947 2SB1328 2SD2005 J0801 2SB1330
Text: -220FP Fig. 25 2SB1186A -160 -1.5 20 50 60-200 TO-220FP Fig. 25 * 2SB1187 -60 -3 30 12 60-320 TO


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PDF 17fl2Ã O-92L 2SC3269 2SB1256 1K-10K 2SD1809 2SD1929 2SD2010 2SD2008 2SD2006 2Sb1333 2SD2004 2SD947 2SB1328 2SD2005 J0801 2SB1330
2SD1761

Abstract: 2S01761 2sd1764 2SD1749 2SD1748A 2SD1748 2SD1747A 2SD1747 2SD1746 2SD1760F5
Text: * 2SB1187 (TO-220FP) BCE 2SD1761 90* 5 0.5 40* 2SB1185 (TO-220FP) BCE 2SD1762 80* 5 0.1 20


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PDF 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A 2SD1749 2SD1749A 2SB1183 SC-63 2SD1759F5 2SD1761 2S01761 2sd1764 2SD1747 2SD1760F5
2sd2041

Abstract: 2SD2061 2SD2076 2SD2073 2sd2083 2SD2054 2SD2085 2SD2090 2SD2046 2SD2068
Text: » 5 0.5 70* 2SB1187 (TO-220FP) BCE 2SD2061 (TO-92HOD) ECB 2SD2063 20* 5 0.5 80


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PDF ZSD2040 2SD2041 2SD2042 2SD2043 2SD2044 2SD2045 2SD2046 2SB1373 2SD2066 2SD2067 2SD2061 2SD2076 2SD2073 2sd2083 2SD2054 2SD2085 2SD2090 2SD2068
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