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2SB1015 datasheet (20)

Part Manufacturer Description Type PDF
2SB1015 Various Russian Datasheets Transistor Original PDF
2SB1015 Others Scan PDF
2SB1015 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1015 Others Transistor Substitution Data Book 1993 Scan PDF
2SB1015 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1015 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SB1015 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB1015 Others Japanese Transistor Cross References (2S) Scan PDF
2SB1015 Others Cross Reference Datasheet Scan PDF
2SB1015 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB1015 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB1015 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB1015 Toshiba TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Scan PDF
2SB1015 Toshiba TO-220 Package Transistors Scan PDF
2SB1015A Toshiba PNP transistor Original PDF
2SB1015(A) Others Silicon PNP Transistor Scan PDF
2SB1015A Toshiba Silicon PNP triple diffused type transistor for audio frequency amplifier applications Scan PDF
2SB1015A Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
2SB1015-O Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB1015-Y Others Transistor Shortform Datasheet & Cross References Scan PDF

2SB1015 Datasheets Context Search

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2SB1015

Abstract: 2SD1406
Text: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications , 2SB1015 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , tolerance:±0.15 mm) 3 2SB1015 SavantIC Semiconductor Product Specification 2SB1015


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PDF 2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406
2SA1146

Abstract: 2SB1200 2SB605 2SB764 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
Text: –¡ -A 2SA1338 2SB710 2SB 1052,' fé T 2SB507 2SB1015 2SB1370 2SB 1053 fé T 2SA1781 2SA1162 , 2SB1015 2SB744 2SB1071 2SB1064 2SB 106 9A fé T 2SB1064 2S8 1070 fé T 2SB507 2SB 1071- fé T 2SB507 2SB1015 2SB1094 2SB1185 2SB 1071A fé T 2SB1185 2SB 1073 fé T 2SB1302


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PDF 2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB605 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
2005 - 2SB1015

Abstract: 2SD1406
Text: JMnic Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation voltage , Tstg Storage temperature -55~150 JMnic Product Specification 2SB1015 Silicon PNP , 60-120 100-200 2 JMnic Product Specification 2SB1015 Silicon PNP Power Transistors , Specification 2SB1015 Silicon PNP Power Transistors 4 JMnic


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PDF 2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406
2SB1015

Abstract: 2sB1015 y 2SD1406
Text: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation , temperature -55~150 Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power , Product Specification 2SB1015 Silicon PNP Power Transistors PACKAGE OUTLINE TOR UC , Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors


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PDF 2SB1015 O-220Fa 2SD1406 2SB1015 2sB1015 y 2SD1406
sa1306

Abstract: 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
Text: - 6b - m s Type No. tt « Manuf. H SANYO Ä S TOSHIBA S m. NEC 0 iL HITACHI » ± m FUJITSU fé T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SB m86> □ —A 2SA1606 2 SA1306 2SAÌ573 2SB 1186A □ -A 2 SA1606 2SA1306 2SB940A 2SB 1187 / □ —A 2SBÍ133 2SB1015 2SB941 2SB1370 ¡SB 1188 / □ -A 2SBU23 2SA1203 2SB1114 2SB1073 2SB 1189, □ —A 2SA1416 2SA1201 2SB804 , 2SB1020 2SB1431 2SB1344 2SB 1196 «« 0 iL 2SB1134 2SB1015 2SB1392 2SB942 2SA1635 2SB 1197 â


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PDF 2SA1606 SA1306 SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1370 2SBU23 2SA1203 sa1306 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
NEC 1357

Abstract: 1354 2SB817 sB1354 2sb941 2sb1015 2SB1132 2SB1376 2sb863 2SA1561
Text: 2SA1363 2SB1308 2SB 1366 - 2SB1133 2SB1015 2SA1394 2SB941 2SB1370 2SB 1367 _ »HS? 2SB1454 2SB1016 , 2SB834 2SB1089 2SB941 2SB 1370 □ —A 2SB1133 2SB1015 2SB1094 2SB941 2SB 1371 fé T 2SB816


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PDF 2SA1S07 2SA1220 2SB1192 2SA1824 2SB1217 2SB1417 2SA1855 2SB1151 2SB942 2SA1825 NEC 1357 1354 2SB817 sB1354 2sb941 2sb1015 2SB1132 2SB1376 2sb863 2SA1561
2SB1013

Abstract: 2S897 2SB1315 2SB1306 2SB679 2SA1307 2SA1431 1318J 2sb631 hitachi 2SB747
Text: 2SA1221 2SB 1298 □ —A 2SB892 2SA966 2SB1288 2SB 1299 - ® T 2SA1469 2SB1015 2SB1094 , 2SB892 2SA1020 2SB 1313 □—A 2SB1123 2SA1213 2SB 1314 , H * 2SA1469 2SB1015 2SB1094


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PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SB1306 2SB679 2SA1307 1318J 2sb631 hitachi 2SB747
2SB1015

Abstract: 2SD1406 2SB1015-O 2sB101
Text:  2SB1015 V y =i >pnpî ( 2SB1015 ) o -(aiii^m^iiififfl : VCE (sat) = -1.7V(ft*)(Ic=-3A, IB=-0.3A) Mi&^è^o : Pq = 25W (Te = 25°C) 2SD1406 t 3 > 7' ') S y ? ') hz & 19 t to ft^fëfë (Ta = 25°C) m § sñ ^r Ä « mfô VCBO -60 V 3 1/ j ? - i ; 7 ? FBUE vCEO -60 V J- ï 7 ? • - X ra m J± Vebo -7 V a V 9 % iîi ic -3 A ^ X -s ¿t Iß -0.5 A 3 u j- ^ il Ta = 25°C PC 2.0 W Te = 25°C 25 fê ^ s Jt Ti 150 °c « # fi Jt Tstg -55-150 °c iL : mm J1- + 0.S5 0.76 — 0.1 5


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PDF 2SB1015 2SB1015) 2SD1406 2-10L1A f1152^ 2SB1015 2SB1015-O 2sB101
2sb1015

Abstract: transistor 2sb1015 2SD1406 transistor 2sd1406
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 APPLICATIONS ·Designed for audio frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww VCBO , Silicon PNP Power Transistor 2SB1015 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified


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PDF 2SB1015 2SD1406 2sb1015 transistor 2sb1015 2SD1406 transistor 2sd1406
2SB1015

Abstract: IC 4025
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm 10.3MAX. 03.2±Q.2 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage = VcE(sat)=-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 Hi MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , 249 2SB1015 TRANSIENT THERMAL RESISTANCE DC CURRENT GAIN hï ï COLLECTOR CURRENT Ic


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PDF 2SB1015 2SD1406 -50mA, 2SB1015 IC 4025
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 2 · · · S B 1 0 1 5 Unit in mm 10.3MAX. 0 3 .Z±O.Z AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Low Collector Saturation Voltage : v CE(sat)= -1 .7 V (Max.) at IC = - 3 A , IB = -0 .3 A Collector Power Dissipation : P £ = 25W (Tc = 25°C) Complementary to 2SD1406 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , SH IBA 2SB1015 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually w orking J 2


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PDF 2SB1015 2SD1406
2sb1015

Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 U nit in mm I í i ü i I a X. A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. · · · Low Collector Saturation Voltage : V cE(sat)= -1-VV(Max.) at I c = - 3 A , Ib = -0 .3 A Collector Power Dissipation : P q = 25W(T c = 25°C) Complementary to 2SD1406 SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base , : 60 -120, Y : 100~200 343 2SB1015 >C - Vc e - ic - Vb e 60 COMMON EMITTER Tc = 25*C -5 0


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PDF 2SB1015 2SD1406 2-10L1A 20x/s 2sb1015
2SB1547

Abstract: 2SB1301 1409L 2SB1193 hitachi 2sb 1391 2SA1719 2SB1022 2SA1718 2SB1335 2sb1425
Text: - 71 - m « Type No. tt « Mamif. H SANYO Ä 2 TOSHIBA B S NEC B iL HITACHI * ± a FUJITSU 85 T MATSUSHITA _ S MITSUBISHI □ — JA ROHM 2 SB 1388 = :M 2SB1Û20 ZSB113Í 2SBÌ255 2SB 1 3 89 B iL 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB 1390 B S 2SB1224 2SB1022 2SA1719 2SB1464 2SB1344 2 SB 1391 B il 2SB1228 2SB1020 2SB1195 2SB 1 392 - 0 ÍL 2SA1469 2SB1015 2SB1095 2SB942 2SB1335 2SB 1393 tó T 2SB1133 2SB ¡394 H ß SNS001 2SB144Q 2SB 1395 , = % 2SA1300 2SB130Ã


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PDF ZSB113Ã 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB1224 2SB1022 2SA1719 2SB1464 2SB1547 2SB1301 1409L 2SB1193 hitachi 2sb 1391 2SA1719 2SA1718 2SB1335 2sb1425
2SB977

Abstract: 2SD1407 2SB975 2SB974 2SB973 2SB970 2SB968 2SB967 2SB966 2SB984
Text: 2SB1015 ÄS LF PA -60 -60 -3 2 25 -100 -60 60 200 -5 -0.5 -1.7 -3 -0. 3 2SB1016 ÄS PA -100 -100 -5 30 , (2-10L1A) BCE 2SB1015 5* -5 -1 270* 2SD1407 (2-10L1A) BCE 2SB1016 9* -5 -0.5 130* 2SD1408


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PDF 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB1011 2SD1376K O-126) 2SB1012K 2SB977 2SD1407 2SB975 2SB984
Not Available

Abstract: No abstract text available
Text: 2SB1015 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140 I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq3.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2SB1015
transistor regulator tv

Abstract: 2SC3346 2SC2242 2SC3559 2sD1413 transistor 2sd525 2sa1329 2sd1408 2SC3558 2SA1012
Text: 2SB834 3 2SA940 1.5 150 50 50 60 *200 300 25 25 30 2SD1405 30 30 40 2SD1406 2SB1015 2SC3296 2SA1304 TO


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PDF T0-220 O-22QAB, TQ-220 2SC1569 2SC2242 2SC2073 2SD1052 2SD1052A 2SD880 2SC2233 transistor regulator tv 2SC3346 2SC3559 2sD1413 transistor 2sd525 2sa1329 2sd1408 2SC3558 2SA1012
2SA1385

Abstract: 2SB1256 2SB892 2SB1015 2SA1020 2SB1441 2SA1266 2SA1770 2sb1117 2sb111
Text: 2SB1177 2SB 1453 S b b 2SB1274 2SB1015 2SB941 2SB1370 2SB 1454 h n 2SB1016 2SB945 2SB1294


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PDF 2SB1395 2SA1266 2SB1446 2SB1434 2SA1363 2SB892 2SB1117 2SB1317 2SB913 2SA1385 2SB1256 2SB892 2SB1015 2SA1020 2SB1441 2SA1770 2sb1117 2sb111
2SB873

Abstract: 2SB1010 948a 2SB1095 2SB1103 2SB 2SB 2SA1296 2S897 939-940 B 947A 2SA1282A
Text: 2SB1101 2SB1186A 2SB 941 x te t 2SB1134 2SB1015 2SB1094 2SB1370 2SB 941A te t 2SB1017 2SB


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PDF 2SA122Ã 2SA1452 2SB953 2SB1019 2SA1645 2SB953A 2SA1296 2SB976 2SA1282A 2SB1010 2SB873 2SB1010 948a 2SB1095 2SB1103 2SB 2SB 2SA1296 2S897 939-940 B 947A
2sb1355

Abstract: 2SB1516 2SB1493 2SA1842 2sb1261 2SB1332 2SB1329 2SB1328 2SA1770 2SB906
Text: 2SB1133 2SB1015 2SB1094 2SB941 2SB 1566 ^ □ —A 2SB1133 2SB1375 2SB1094 2SB943 2SB 1567 Q—A


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PDF 2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1516 2SB1493 2SA1842 2sb1261 2SB1332 2SB1329 2SB1328 2SA1770 2SB906
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
Text: 2SB1002 2SB766 2SB 1133 H ¥ 2SB1015 2SB1094 2SB941 2SB137Û 2SB 1134 ^ 2SA1307 2SA1441


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
2SD1406

Abstract: 2SB1015 RL15A
Text: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS


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PDF 2SD1406 O-220Fa 2SB1015 O-220Fa) 2SD1406 2SB1015 RL15A
en220

Abstract: DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
Text: UN411L RT1P431S DTA143ES 2sa 1657 «B®? 2SA1304 2SB1096 2SB940 2SB1186A 2sa 1658 y «am? 2SB1015


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PDF 2sb1203 2SA1244 2SB933 2SB1204 2SB952 2SB945 2SB1294 2SB1018 2SB946 2SA145Z en220 DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
2SD1406

Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain : hFg=300(Max.) (V^jj= 5V , 1^=0.5A) . Low Saturation Voltage · · VCE(sat)=1.0V(Max.)(Ic=3A, IB=0.3A) 1Û3M AX. 03.2±CX2 & i d i« r ^ 1+ * . High Power Dissipation : Pf;=25W (Tc=25°C) . Complementary to 2SB1015 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector


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PDF 2SD1406 2SB1015 VCC-30V 2SD1406
2SB1015

Abstract: 2SD1406
Text: 2SD1406 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hFE=300(Max.)(VCE=5V, IC=0.5A) . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A) . High Power Dissipation : PC=25W (Tc=25°C) . Complementary to 2SB1015 MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage vCE0 60 V Emitter-Base Voltage VEBO 7 V Collector Current ÏC 3


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PDF 2SD1406 2SB1015 10L3MAX, a76-ais 2SD1406
2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Text: Power Amplifier Type No. NPN 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2SD526 2SC4793 2SD1406 2SD1408 2SD1407 2SC3180N 2SC3181N 2SC3182N 2SC3907 2SC4688 2SC4689 2SC4690 2SC3280 2SD2155 2SC3281 2SC4029 PNP 2SA1145 2SA817A 2SA965 2SA966 2SA1360 2SA1356 2SA1358 2SA1359 2SB834 2SB595 2SB596 2SA1837 2SB1015 2SB1017 2SB1016 2SA1263N 2SA1264N 2SA1265N 2SA1516 2SA1803 2SA1804 2SA1805 2SA1301 2SB1429 2SA1302 2SA1553 Ic (A) 0.05 0.4 0.8 1.5 0.05 0.8 1 VcEO Pc (W) 0.8 0.8 0.9 0.9


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PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2Sj148 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
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