The Datasheet Archive

2SA935 datasheet (14)

Part Manufacturer Description Type PDF
2SA935 Transys Electronics TO-92L Plastic-Encapsulated Transistors Original PDF
2SA935 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SA935 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA935 Others Japanese Transistor Cross References (2S) Scan PDF
2SA935 Others Cross Reference Datasheet Scan PDF
2SA935 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA935 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA935 Others Transistor Substitution Data Book 1993 Scan PDF
2SA935 Others The Japanese Transistor Manual 1981 Scan PDF
2SA935 Others Scan PDF
2SA935 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA935 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
2SA935 ROHM TO-92, SPT Type Transistors Scan PDF
2SA935 ROHM Epitaxial Planar PNP Silicon Transistor Scan PDF

2SA935 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1015

Abstract:
Text: 2SA1309A 2SA854 2SA 535¿ H 2SA1096 2SA935 2SA 536 . = # 2SA984 2SA1096 2SA935 2SA 537 (H)J S iL 2SB560 2SA17S5 2SA1096 2SA935 2SA 537A (H) S iL 2SA1755 2SA1096 2SA935 2SA 538 ." JK


OCR Scan
PDF 2SA1358 2SA1096 2SB1086 2SA934 2SA1015 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1339 2SA1309A 2SA1096
2SA935

Abstract:
Text: 2SA935 2SA935 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation PCM : 0.75 2. COLLECTOR W (Tamb=25) 3. BASE Collector current ICM : -0.7 A Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE


Original
PDF 2SA935 O-92L -100mA -500mA, -50mA 2SA935 transistor 2Sa935
2SA1015

Abstract:
Text: 2SA1096 2SA935 2SA 498 . X 2 2SA965 2SB647 2SA1096 2SA935 2SA 499 ^ K 2 2SA1096 2SA933 2SA , 2SA429GTM 2SA675 2SA778(K) 2SA720 2SA1039 2SA 503 S 2 2SA965 2SA1096 2SA935 2SA 504 - S 2 2SA965 2SA1096 2SA935 2SA 505 „ S 2 2SB560 2SA1356 2SB548 2SA715 2SA1096 2SA935 2SA 506 K 2 2SA1356


OCR Scan
PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA985 NEC 2SA1096 2SA494
2sa1015

Abstract:
Text: 2SA935 2SA 552 B 'S 2SA1339 2SA1096 2SA1638 2SA 553 s±a 2SA1096 2SA854 2SA 564 *±S , 2SA854 2SA 557 «±a 2SA1015 2SA953 2SA935 2SA 558 K±a 2SA1309A 2SA 559 2SA1309A 2SA 559A «±a 2SA1309A 2SA 560 ^ s: s 2SB560 2SA965 2SA1096 2SA935 2SA 561 36: s , » 2SA984 2SA1015 2SA953 2SA673A 2SA1309A 2SA935 2SA 571 _ B 1 2SA1729 2SA1096 2SA 572 ^ , 2SA1038 2SA 576 StBÍS 2SA953 2SA673A 2SA1096 2SA854 2SA 577 »B* 2SA953 2SA673A 2SA1096 2SA935


OCR Scan
PDF 2SA778AK 2SA1309A 2SA562 2SA673 2SA933 2SA984 2SA1015 2sa1015 2SA673 2sa733 2SA935 2SA933 2SA930 2SA953 2SA572 564a 2SA562
2SA935

Abstract:
Text: ROHM CO LTD /Transistors MOE T> m TflSÜTTT GDDSMn S MRHfl 2SA935 pnp y'J3> h & X<7f->^/Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistor ;7-27-AS" • Wfi>J";£|21 , 500 2SA935 PQR © © noHpn 121 This Material Copyrighted By Its Respective Manufacturer ROHM CO LTD . /Transistors MOE D ■7020^=1 GÜ0S420 1 ES RH M 2SA935 • SsCfà ^tÌtìH/Electrical , Manufacturer ROHN CO LTD //.Transistors 40E D m 7flaflW QQQS4S1 3 ■RHM 2SA935 T-27-15 Ta


OCR Scan
PDF 2SA935 7-27-AS" 21/Dimensions -80VJ 700mA) -700mA O-92L SC-51 T-27-15 2SA935 transistor 2Sa935 T103 2sa935 transistor 7-27-AS
2sa935

Abstract:
Text: h ~7 > v X $ /Transistors 2SA935 2 S A 9 3 5 · « * Î'S ^ J Îh 'Ü & T A 7 -f itr^ v / ^ u y u -^ P N P v ,jn >h 7 > v ^ /Medium Power Amp. & Switching · ÿHK^J-Æ B/Dim ensions (Unit : mm) Si> > u V 'V 'J i t Limits -8 0 -8 0 -5 -7 0 0 750 125 -5 5 -1 2 5 Unit V V V mA mW " C ·C Min. -8 0 , 120-270 R 180-390 · * IS n aD · 3M I>ÉoH n- ! Ì S :ima o mima) 1^)10 T103 «a) Type 2SA935 , /Transistors 2SA935 SfrXV íV vJlT


OCR Scan
PDF 2SA935 --80V) -700m 2sa935 E50M
2sa1015

Abstract:
Text: ♦ * * * * « » * * * * * * * ♦ * * * * * * * * m € Type No. tt « Manuf. E. ft SANYO je s TOSHIBA b a NEC b 4 HITACHI » ± a FUJITSU fô t MATSUSHITA H m MITSUBISHI o — A ROHM 2SA 580 *±a 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA 581 «±2 2SA1450 2SA1096 2SA935 2SA 594 â , 2SA 607 B a 2SB647 2SA1096 2SA935 2SA 608 - H m 2SA1015 2SA733 2SA673 2SA1309A 2SA999 2SA933 , «±s 2SA1450 2SA817A 2SA1283 2SA935 2SA 626 ^ b h 2SB775 2SB558 2SA 627_ b a 2SB775


OCR Scan
PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
2SA970

Abstract:
Text: 2SB549 2SB1086 2SA 682 — Ä S 2SB1144 2SA1358 2SB548 2SB647 2SA935 2SA 683 — fò T 2SB544 , 2SA817 2SA953 2SB647 2SA719 2SA1399 2SA935 2SA 698 = « 2SA1248 2SB1086 2SA 699- fâ t 2SB1142 , 2SA935 2SA 709 — b a 2SA984 2SA817A 2SA673AÍK) 2SA933 2SA 710 b a 2SA1339 2SA499 2SA720


OCR Scan
PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA970 2SA934 2SA720 2SA836 2sa952 2sa933 2SA705
2SA1015

Abstract:
Text: - 15 - Sk € Type No. a S Manuf. SANYO X TOSHIBA B « NEC 0 4 HITACHI » ± a FUJITSU <2 T MATSUSHITA H £ MITSUBISHI □ — A ROHM 2SA 816 K HE 2SA1358 2SA985 2SB647 2SA794 2SB1085 2SA 817 2SA984 2SA817 2SB647 2SA777 2SA1284 2SA935 2SA 818 ~ 2SA1145 2SB717 2SA 819 □ —A 2SA854 2SA 820 □—A 2SA1207 2SB1264 2SA 821 - □ —A 2SA1207 2SB1264 2SA 822 □ —A , 2SA817A 2SB648 2SA1284 2SA935 2SA 851 _ a 2SA1783 2SA987 2SA933


OCR Scan
PDF 2SA1358 2SA985 2SB647 2SA794 2SB1085 2SA984 2SA817 2SA777 2SA1284 2SA1015 2SA733 2SA847A 2SA817 2SA968 2SA823 2SA933 2SA935
2SA935

Abstract:
Text: hv >y X $ /Transistors 2SA935 2SA935 « R E , ^ît'/iitT'Æp-âo V C EO = ~ 8 0 V , lC = - 0 .7 A PNP y `j a > b 7 > y * $ Epitaxial Pianar PNP Silicon Transistor y ? - > ? "ffl/Medium Power Amp. & Switching · M f i'ÎS iE a /D im e n slo n s (Unit : mm) · Features High breakdown , Item hFE : mmm&) A ; 1-7 IS P 82 -18 0 Q 120-270 R 180-390 Type 2SA935 h FE % (ffl , > M h 7 > y ^ ^ /T ransistors 2SA935


OCR Scan
PDF 2SA935 --80V, --500mA/ --50mA 100MHz --10V, 2SA935 transistor 2Sa935
Not Available

Abstract:
Text: h7 > y X m 40 E D ROHM CO LTD QDOSMn S ■R H U $ / T ransistors 2SA935 2SA93 PNP y U = | > /Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistor ~r-27-'S~ • ^ -Jf^ Jiia /D im e n sio n s (U nit: mm) • « ft -M fxAJivK'fc 1)« ¡H E * aovj. (V c e o — 2 ) P l a t e r - & 3 ( l c M ax= — 700 m A) ■B G SHB • Features , J|0 item ; Type hFE 2SA935 PQR ro hri 1 000 © 2 500 © 121


OCR Scan
PDF 2SA935 2SA93 100mA 500mA/â
2010 - 2SA1315-Y

Abstract:
Text: 2SA825 2SA825 2SA825S 2SA825S 2SA954L BFW21 BSR33 2SB560 2SB560 2SB560 2SB767 2SB 1198K (A) 2SA935 2SA935


Original
PDF BC448A 2SB647 2SB1025 BC490 BC490L S1839 2SA1315-Y 2SB560 2SA785 2N4033 2SA817Y TXD10K40.80 605-P 2SA1316GR 2SA1316-GR 2SA1315Y
2s8698

Abstract:
Text: 2SA1309A 2SA854 2SA 661 — \ml , 7™l Nt 2SA984 2SA817 2SA954 2SA673A 2SA935 2SA 663 K 2SB686


OCR Scan
PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
2004 - 2SA935

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA935 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation PCM : 0.75 2. COLLECTOR W (Tamb=25) 3. BASE Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


Original
PDF O-92L 2SA935 O-92L -100mA -500mA, -50mA 2SA935
SS2205

Abstract:
Text: 2SA 1533 fé t 2SA1705 2SA817A 2SA1221 2SB647 2SA1284 2SA935 2SA 1534 ' fé t 2SA1703 2SA966


OCR Scan
PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SB1043 2SA1586 2SA1284 2SA1283 2SA1178
2SA1019

Abstract:
Text: - 48 - m s Type No. tt « Manuf. z ft SANYO Ä 2 TOSHIBA B m NEC B ir HITACHI t ± il FUJITSU fé T MATSUSHITA H m MITSUBISHI □ - A BÖHM 2SB 605 - a 8 2SB764 2SA505 2SA673A 2SA684 2SA935 2SB 606 „ *±a 2SA879 2SB 608 a ir 2SB649 2SB1086A 2SB 612 a a 2SB817 2SB 616 , a « 2SB775 2SB686 2SB859 2SB625 2SB 616A a * 2SB775 2SB686 2SB 617 - a « 2SB776 2SB688 2SB626 2SB 618 a s 2SB816 2SB688 2SB 619 fé T 2SA673 2SB 620 fé T 2SA1783 2SA1015


OCR Scan
PDF 2SB764 2SA505 2SA673A 2SA684 2SA935 2SA879 2SB649 2SB1086A 2SB817 2SB775 2SA1019 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA879 2SA1115 F 2SB549 2SA673
2sa850

Abstract:
Text: 2SB1085A 2SA1038 2SA1038 2SAI482 2SA1515 2SA1515 2SA935 2SB1085A 2SB1085B 2SB1065 2SB1065 2SB1212 2SB1010


OCR Scan
PDF 2SA930 2SA931 2SA932 2SA933 2SA929 2SA1015 2SA872 2SA112Y 2SA999L 2SA933 2sa850 2sa1047 2SA992 2SA872 2SB564A 2sa9630 2SA1038 2SB861 2SB1212 2sa733
2sa899

Abstract:
Text: -0.005 2SA934 B —A PA/S»: -40 -32 -1 0. 75 -0. 5 -20 82 390 -3 -0.1 -0.5 -0. 5 -0.05 2SA935 D —A , 2SA934 100* -10 -0.05 20 SC-51 ECB 2SA935 200* -5 -0. 01 4* TO-92® ECB, Da 2SA936 140


OCR Scan
PDF Ta-25t) 2SA847A ZSA854 2SA854S 2SA872 2SA872A 2SC1980 2SA921 2SA929 2SA930 2sa899 2SC1904 2SA904A 2SA898 2SA887 2SA881 2sc2673 2SA933LN 2SA885
B948A

Abstract:
Text: 2SA720A 2SA1284 2SA935 2SA 1451 ' * 2 2SB1136 2SA1444 2SB948A 2SA1758 2SA 1452 " S s 2SA1444


OCR Scan
PDF RN20Q2 DTA114ES 2SA1669 2SA1245 2SA1768 2SB1473 2SA1284 2SB1130M 2SA1703 2SB793 B948A 2SA1757 2SA1636 2sa1307 2SA1462 2SA1637 nec 1441 2SA1444
2SA970

Abstract:
Text: 2SA1284 2SA935 2SA 1155 - m 2SA1239 2SA 1156 — b a 2SA1772 2SA1775 2 SA 1158 2SA1016K


OCR Scan
PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA970 2SB927 2SA101S 2sa977 2SA933LN 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SA935 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.7 A PC Collector


Original
PDF O-92L 2SA935 -100mA -500mA -50mA
2SB1545

Abstract:
Text: - 40 - Sì s Type No. tt S Manuf. H * SANYO K S TOSHIBA s a NEC 0 ÌL HITACHI m ± a FUJITSU fâ T MATSUSHITA H m MITSUBISHI □ — A BÖHM 2SA 1750 H # 2SA1156 2SA1110 2SA 1751 H # 2SA1383 2SA1535A 2SA 1752 H $ 2SA1383 2SA1535 2SA 1753 H if 2SA1182 2SA1464 2SA1121 2SB970 2SA1365 2SA 1755 ^ B iL 2SA170B 2SA1315 2SB984 2SA1674 2SA935 2SA 1757 . □ —A 2SA1469 2SB1016 2SA1741 2SB945 2SA 1758 □ -A 2SA1471 2SA1452 2SA1744 2SB947A 2SA 1759 □ —A 2SA1740


OCR Scan
PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2SA170B 2sa1115 2sa1015 2SA1383 2SA1091 2Sa1744 2SA1162
2sa933

Abstract:
Text: tö t 2SA984 2SA953 2SA673A 2SA720 2SA935 2SA 732 ✓ *±a 2SA950 2SA684 2SA854 23A 733 - b


OCR Scan
PDF 2SA1768 2SA830 2SB849 2SB946 2SB1142 2SA473 2SB772 2SA699 2SB1314 2SB1009 2sa933 2sa726 2SA934 2sa999 2SA1115 2SA930 2SA999L 2SA854 2SA1005 2SA715
2SA935

Abstract:
Text: Transys Electronics L I M I T E D TO-92L Plastic-Encapsulated Transistors 2SA935 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation PCM : 0.75 2. COLLECTOR W (Tamb=25) 3. BASE Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX


Original
PDF O-92L 2SA935 O-92L -100mA -500mA, -50mA 2SA935
2SA817A

Abstract:
Text: 2SA 1398 H s 2SB544 2SA966 2SA683 2SA934 2SA 1399 H « 2SA1705 2SA817A 2SB621 2SA935 2SA


OCR Scan
PDF 2SA1740 2SB1203 2SA1244 1385Z 2SA1244Ã 2SB817 2SA1302 2SB1163 2SA817A 2SA934 2SB774 2SA1127 2SA1740 2SA999 UN4112 2sa1306 ANIF4M DTA124ES
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