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2SA914 datasheet (14)

Part ECAD Model Manufacturer Description Type PDF
2SA914 2SA914 ECAD Model Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SA914 2SA914 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA914 2SA914 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA914 2SA914 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA914 2SA914 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA914 2SA914 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA914 2SA914 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA914 2SA914 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA914 2SA914 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA914 2SA914 ECAD Model Panasonic Si PNP epitaxial planar. AF power pre-amplifier. Scan PDF
2SA914Q 2SA914Q ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA914R 2SA914R ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA914S 2SA914S ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA914T 2SA914T ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF

2SA914 Datasheets Context Search

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2005 - 2SA914

Abstract: 2SC1953
Text: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector , temperature -55~150 JMnic Product Specification www.jmnic.com 2SA914 Silicon PNP Power , 260-450 JMnic 90 450 5 70 pF MHz Product Specification www.jmnic.com 2SA914


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PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953
2SA914

Abstract: 2SC1953
Text: PANASONIC INDL/ELEKiSEMIi 75C D | bc]3afiS4 □0Dfl77t, □ h ^y-JTSZ_[_ 2SA914 2SA914 v U □ y PNP ik^Jpi/ TJ\sy°\s-i-m/Si PNP Epitaxial Planar fiJS»«:*Jl)frltJiMBB/AF Power Pre-amplifier 2SC1953 t 3 > y U y V 2 'J /Complementary Pair with 2SC1953 ■# ^/Features • jt)i:®i£-tSiiM-:fihKF.<7)it$S,ttii){J:v^/Good linearity of hFE • 3 u 9 9 • i 5 ■•/ i'iFt VcEoA'i®!-v/High VCE0 , | (^32054 DDDfl? 2 h ^yvx?_'_ 2SA914 Pc-Ta Ic-VcE le —VcE(sat) 1.6 1.4 1.2 1.0 X. 3 0.6 n S! 0.4


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PDF 0Dfl77t, 2SA914 2SC1953 2SC1953 100MHÃ 2SA914
2SA914

Abstract: 2SC1953
Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type AF Power Pre-amplifier Complementary Pair with 2SC1953 ■Features • Good linearity of DC current gain (Iife) • High collector-emitter voltage (Vceo) • Low collector output capacitance (C„b) ■Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage VcBO -150 V Collector-emitter voltage Vceo -150 V , 90-155 130-220 185-330 260-450 Panasonic DGlbllO QTfl —104— Power Transistors 2SA914 0 20 40 60


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PDF 2SA914 2SC1953 100MHi 2SA914 2SC1953
2SA914

Abstract: 2SC1953
Text: SavantIC Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter 2 , -55~150 SavantIC Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors , Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA914 -


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PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953
NEC 1357

Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Text: - 29 - a 2SA1351, 2SA1352, 2SA « / 1 353 > Z Z Z a Manuf. « Z SANYO ;¥ Type No. U 2 TOSHIBA B NEC 2SA953 S 0 HITACHI ÌL m ± ì1 FUJITSU tfl T MATSUSHITA 2SA1309A 2SA914 2SB1011 h m . MITSUBISHI - ROHM A a £ 2SA937 2SA1142 , SA 1360 , 2S A 1361 2S A 1 362 2 SA 1363 2 SA12 20 2SB744 2SA1142 2SA1110 2SA1096 2SA914 , £ 2SA1091 2SA1091 2SB892 2SA1476 2SA1142 2SB1110 2SA914 2SB1011 2SA1282A 2SA1125 2SB1374


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PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 2SA937 2SA1091 2SA953 2sa1361 2SA1142
2SA914

Abstract: 2SC1953
Text: Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter 2 , temperature -55~150 Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power , 2SA914 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 -


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PDF 2SA914 O-126 2SC1953 -30mA -100V; -10mA 2SA914 2SC1953
2SA101S

Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
Text: - 23 - m « Type No. a s Manuf. -E * SANYO M S TOSHIBA a a NEC B iL HITACHI « ± ii FUJITSU fé T MATSUSHITA H * MITSUBISHI □ — A ROHM 2SA 1124 »" fé T 2SA1208 2SA1320 2SA1482 2SA 1125 . të T 2SA1360 2SA914 2 SA 1127- fé T 2SA1783 2SA101S 2SA933LN 2SA 1128 fé T 2SB698 2SA562TM 2SA854 2SA 1129 B a 2SB919 2SB1018 2SB925 2SA 1133 „ fé T 2SB940 , 2SA1309A 2SA933S 2SA 1144 „ x s 2SA1209 2SA1142 2SB648 2SA914 2SA 1145 - s 2 2SA1208 2SA916


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PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA101S 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1232 Toshiba 2SB754
2SA914

Abstract: 2SC1953
Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type AF Power Pre-amplifier Complementary Pair with 2SC1953 ■Features • Good linearity of DC current gain (Iife) • High collector-emitter voltage (Vceo) • Low collector output capacitance (Cot) ■Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage VcBO -150 V Collector-emitter voltage Vceo -150 V , Transistors 2SA914 Ic-Vce Ic - Vbe 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 0 -2 -4 -6


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PDF 2SA914 2SC1953 O-126 100MHi 2SA914 2SC1953
2SC1953

Abstract: 2SA914 2SG1953
Text: Power Transistors 2SG1953 2SC1953 Silicon N P N Epitaxial P lan ar Type A F Pow er Pre-Amplifier Complementary Pair with 2SA914 Features · High cdllector-emitter voltage ( V ceo) · Small collector output capacitance (C,b) · Optimum for 60-100W pre-driver in complementary pair with 2SA914 . P ackage Dim ensions Absolute M axim um Ratings (T a = 2 5 °C ) Item Symbol VC H I) VcEU VR B O Ici* Ic Pc Ti T , Value I - * cn Unit V V V m' A mA W *C " C Collector-base voltage


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PDF 2SG1953 2SC1953 2SA914 0--100W --10mA, 200MHz 132fl5E 001b3bb 2SC1953 2SA914 2SG1953
2SA1949

Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Text: -450 0.15 2SB1536 20 5 <1.0 3.0 100 90 -625 2 Pre-amp. ! 2SA914 I 2SC1953 150 0.05 , /80 4 <2.0 3.0 12 1000 -10000 3 2SD2530 100 5 <2.5 4.0 16 1000-10000 2 ! 2SA914 I


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PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SA1950 2C156 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Not Available

Abstract: No abstract text available
Text: 2SB967 ! 2SA900 Low 12C1568 VcE(sat) A 2SB1593 2SC2594SS 2SB1536 Pre-amp. 2SA914 , 100 ! 2SA914 I.2SC1953 2SB1011 High breakdown voltage 2SB1546 2SD2366 (2SA1949


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PDF O-126 O-202 T0-220 O-220F 2SC1398A 2SB1543 2SB1416 2SB1417 12SD2363 12SD2136
2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Text: 2SA914 2SB 1110 * b iL 2SA1478 BF458 2SAU56 2SA914 2SB 1112 b iL 2SB975 2SB1194 2SB1340 2SB


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PDF 2SA1706 2SB880 2SB676 2SB601 2SB950 2SB1341 2SB886 2SB673 2SB1108 2SB1343 2SB1099 2SB615 nec 2SB1099 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
2SC1953

Abstract: 2SA914 h11a
Text: Power Transistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cdllector-emitter voltage (Vceo) • Small collector output capacitance (C„b) • Optimum for 60—100W pre-driver in complementary pair with 2SA914 Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage VcBU ' 150 V Collector-emitter voltage VcKU 150 V Emitter-base voltage Vebo 5 V Peak collector current' la- 100 ' m'A


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PDF 2SG1953 2SC1953 2SA914 001b3bb 2SC1953 2SA914 h11a
2SA1949

Abstract: 2SC5221 2SB1526 2SD2407 2SA1951 2SD2411 2SD2412 2SB1546 2SC1398 2sc3943
Text: -450 0.15 2SB1536 20 5 <1.0 3.0 100 90 -625 2 Pre-amp. ( 2SA914 l 2SC1953 150 0.05 <1.0 , 1000 -10000 3 2SD2530 100 5 <2.5 4.0 16 1000-10000 2 ( 2SA914 I.2SC1953 150 0.05 <1.0


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PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 f2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SB1526 2SD2407 2SA1951 2SD2411 2SD2412 2SB1546 2SC1398 2sc3943
2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Text: ) 2SC 2594* 2SD2556 Pre-amp ( 2SA914 12SC1953 2SD946/A/B 2SD2404 2SB1526 2SB1504 Darlington 2SD1640 , < 2SA914 I 2SC1953 2SB1011 High breakdown f 2SA1949 voltage 12SC5222 I 2SA1950 90 -4 5 0 3080 -2 8 0 20 , 2SA719 2SA720/A 2SA748 2SA777 2SA794/A 2SA838 2SA879 2SA885 2SA886 2SA900 2SA914 2SA921 2SA963 P ackag


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PDF O-126 O-202 T0-220 2SC1398A 2SB1573 2SD2407 O-220F T0220F T0220 2SC5224 2SA1949 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
POWER TRANSISTORS

Abstract: 2SC1953 semiconductor product 2SA914
Text: Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage


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PDF 2SC1953 O-126 2SA914 -10mA POWER TRANSISTORS 2SC1953 semiconductor product 2SA914
2sa899

Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Text: -180 -180 -1 15 65 330 -10 -0. 15 -1.5 -1.5 -0. 3 -0.03 2SA914 föT LF PA -150 -150 -0.05 1. 2 -1 , ¼ is 2SC1913A TO-220AB® BCE(S) 2SA913A 70 -10 -0.01 5 2SC1953 (TO-126(b) ECB 2SA914 50


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PDF Ta-25t) 2SA847A ZSA854 2SA854S 2SA872 2SA872A 2SC1980 2SA921 2SA929 2SA930 2sa899 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
Text: 2SB1190 2SA 1476 - = 2SA1383 2SA1133A 2SA 1477 = !M 2SA914 2SA 1478 „- = 2SA1142


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PDF 2SB698 2SA950 2SA1515 2SA1150 2SA1515S 2SA1298 2SB1197K 2SA1257 2SA1330 2SB792 2SA1441 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Text: 1208 > H 2SA989 2SA1376 2SB1244 2SA1124 2SA1482 2SA 1209 - = m 2SA1013 2SA1142 2SB648 2SA914


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PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646
2SB817

Abstract: 2sa1115 2SA992 2sa1015 2sa1302 2SA1142 sanyo 1042 2SA1123 2SA847A 2SA1782
Text: - 21 - SJ € Type No. tt « Manuf. = m SANYO 3E 2 TOSHIBA 0 a NEC B 4 HITACHI * ± a FUJITSU 2SA914 2SA 1 048 n 2 2SA178Z 2SA1175 2SA1374


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PDF 2SA1016K 2SA970 2SA992 2SA1123 2SA847A 2SA1016 2SB817 2sa1115 2SA992 2sa1015 2sa1302 2SA1142 sanyo 1042 2SA847A 2SA1782
2SC1953

Abstract: power transistors semiconductor product 2SA914 NPN Power Transistors
Text: SavantIC Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage


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PDF 2SC1953 O-126 2SA914 -10mA 2SC1953 power transistors semiconductor product 2SA914 NPN Power Transistors
2SA1885

Abstract: 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940
Text: - 42 - ai s Type Ho. tt € Manuf. H * SANYO K ~3L TOSHIBA DEC a ÌL HITACHI m ± a FUJITSU fó T MATSUSHITA H « MITSUBISHI □ - A ROHM 2SA 1820 □ —A 2SB892 2SA1020 2SB1433 2SB1434 2SA 1821 □ —A 2SA1532 2SA 1823 2SA1792 2SB1413 2SA 1824 *r ¥ 2SA1793 2SB1447 2SA 1825 - ¥ 2SB946 2SA 1826 2SA1794 2SB940 2SA 1827 , 2SA1794 2SB1177 2SA 1828 ¥ 2SA914 2SA 1832 :i 2 2SB1462 2SA1774 2SA 1833 - B S 2SB1228 2SB1020


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PDF 2SB892 2SA1020 2SB1433 2SB1434 2SA1532 2SA1792 2SB1413 2SA1793 2SB1447 2SB946 2SA1885 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940
toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: 2SB1109 2SA914 2SA1482 2SB 718 _ B iL 2SA818 2SB1110 2SB 719 _ B iL 2SA1011 2SA968 2SB546A


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Text: - 34 - S s Type Ho. tt S Manuf. = # SANYO X S TOSHIBA B S NEC 0 Ä HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI □ - A ROHM 2SA 1535 , fö T 2SB1037 Tfifi 2SB649A 2SB1186A 2SA 1535A fô T 2SA1306A 2SB1186B 2SA 1537 = 2SB548 2SB1314 2SA 1542 □ —A 2SA1783 2SA1015 2SA733 2SA1309A 2SA 1543 □ —A 2SA1015 2SB642 2SA 1544 B S 2SA1624 2SA1091 2SA1018 2SA 1545 B m 2SA1371 2SA1432 2SA879 2SA 1546 B ^ 2SA1381 2SA914 2SA 1547 â


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PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
transistor a7t

Abstract: 2SA917 709a 2SA916 2SC1931 SA 1941 2SA562 T 2SA562 2SA914 2SA915
Text: ) 2000* 2 84B » 1953 K T AF.PA 150 5 100 1 W 150 1 100 65-450 5 10 10 -10 200* 222 2SA914


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PDF 2SA914 Tc-25 175MHz, /-27MHz, 2SA562 transistor a7t 2SA917 709a 2SA916 2SC1931 SA 1941 2SA562 T 2SA915
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