The Datasheet Archive

Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
1812SA821KAT1A\\SB AVX Corporation CAP CER 820PF 10% 1500V C0G 1812
1812SA821JAT1A\\SB AVX Corporation CAP CER 820PF 5% 1500V C0G 1812

Search Stock (2)

  You can filter table by choosing multiple options from dropdownShowing 2 results of 2
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1812SA821JAT1A\\SB AVX Corporation Chip One Exchange - -
1812SA821KAT1A\\SB AVX Corporation Chip One Exchange - -

No Results Found

2SA821 datasheet (21)

Part Manufacturer Description Type PDF
2SA821 Jiangsu Changjiang Electronics Technology TRANSISTOR (PNP) Original PDF
2SA821 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA821 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SA821 Others Transistor Substitution Data Book 1993 Scan PDF
2SA821 Others The Japanese Transistor Manual 1981 Scan PDF
2SA821 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA821 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA821 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA821 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA821 Others Japanese Transistor Cross References (2S) Scan PDF
2SA821 Others Cross Reference Datasheet Scan PDF
2SA821 ROHM TO-92, SPT Transistors Scan PDF
2SA821 ROHM PNP Transistor Scan PDF
2SA821 ROHM TO-92, SPT Type Transistors Scan PDF
2SA821S ROHM Silicon PNP Transistor Original PDF
2SA821S ROHM High-Voltage Amplifier Transistor (-210V, -30mA) Original PDF
2SA821S Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA821S Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA821S ROHM TO-92, SPT Transistors Scan PDF
2SA821STPP ROHM High-Voltage Amplifier Transistor (-210 V, -30 mA) Original PDF

2SA821 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA821

Abstract:
Text:  (Ta=25°C) (Absolute Maximum Ratings) m s aS * a 2SA806, 2SA821 VcBO -210 V 2SA805, 2SA820 -180 2SA802, 2SA832 -130 2SA806, 2SA821 VcER -210 V 2SA805, 2SA820 -180 2SA802, 2SA832 -130 i; -y ?■/<— Vebo -5 V -^{yO^mn I c -30 mA 2SA806,2SA805,2SA802 Pc 150 mW 2SA821 , 'oESgi oçabo?_JEDEC: TO-92 2SA821 — 2SA832 2 6max El AJ : SC-43 0. 65-411-ÎM.55] 2.54 2.54 m 1 , 2SA806, 2SA821 BVcer —210 — — V Ic=—ÎOO^A, R be=10KO 2SA805, 2SA820 — 180 — - 2SA802


OCR Scan
PDF 2SA806, 2SA821 2SA805, 2SA820 2SA802, 2SA832 2SA805 2SA806 2SA832 10KO 2SA802 2sa805a 2SA820 toyo
2SA821

Abstract:
Text: 2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage Low Transition Frequency G A 2SA821-P 82~180 D REF. 2SA821-Q 82~180 56~120 Range Emitter Collector Base J CLASSIFICATION OF hFE Product-Rank 2SA821-N H B K E C F A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70


Original
PDF 2SA821 2SA821-P 2SA821-Q 2SA821-N 14-Feb-2011 -150V, 2SA821
2s8698

Abstract:
Text: 2SA699A 2SB1187 2SA 637 85 T 2SA1018 2SA821 2SA 638 B ™ 2SA1207 2SA778(X) 2SA921 2SA821 2SA 638S nr L 2SA970 2SA821 2SA 639 m L 2SA1207 2SA970 2SA778A(K) 2SA1018 2SA821 2SA 639S a n 2SA970 2SA821 2SA 640 x a * 2SA929 2SA970 2SA836 2SA1039 2SA 641 0 « 2SA499 2SA844


OCR Scan
PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
2SA748

Abstract:
Text: 2 SAS17 2SA673A 2SA1284 2SA935 2SA 778 (K) B a 2SA1207 2SA949 2SA638 2SA1018 2SA821 2SA 77SA_ b a 2SA639 2SA1018 2SA821 2SA 778AK m » 2SA821 2SA 77 9 (K)~ a a 2SB511 2SA473


OCR Scan
PDF 2SA1705 2SB548 2SA715 2SA684 2SB1043 2SB817 2SA1232 2SB514 2SA985 2SA748 2SB927 2SA757B 2SB1043 2SA715 2SA985 NEC 2sa933 2SB596 2sa763
2SA821

Abstract:
Text: h ~ 7 > y X $ / T ransistors 2SA821 9 Q A A 9 1 i t f ^ + v 7 ^ u - t ^ P N P '>>;=]> h 7 > v ' x $ ¡g ^ J E fllJ i^ iiiW H ig h Voltage Amp. Epitaxial Planar PNP Silicon Transistor · , · m m s, / 2SA821 h FE N PQ .m m i T - t > ·? T91 T92 T93 TP 1 000 1 500 , 4 # tiffil8 /E le c tr ic a l Characteristic Curves 2SA821 1 1 1 Ta=25°C - f l 1 1 I - 0 .2 , 2SA821 : f-rfMHz) V c E = - 5V T a = 2 5 'C - - GAIN BANDWITH PRODUCT I C O


OCR Scan
PDF 2SA821 2SA821
2SA821

Abstract:
Text: h *7 > V ^ £ / T ransistors 2SA821 2SA821 Epitaxial x k 0 ^^'> 7 7 ;u :7 0 u ""^P N P Planar PNP Silicon Transistor ¡lE iÎJ ± ÎiJ OE ^ ^ ffl/H ig h Voltage Amp. · 1) & & o ^ t> i 0 / D im e n s io n s (U n it : mm) V cer= - 2 1 0 V V · F e a tu re s 1) High b reakd o w n voltag: Vc , 2SA821 hFE NPQ 12 ^ (. J : > * « * p °d ) t Item hFE N 5 6 -1 2 0 -K 's V T93 1000 ! > 3000 '. j i t n u m 183 h "7 > V X $ /Transistors 2SA821 I EMITTER TO BASE


OCR Scan
PDF 2SA821 2SA821 -210V.
2SA821

Abstract:
Text: 2SA821 2SA821 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -50µA , IE


Original
PDF 2SA821 -150V, 2SA821
Not Available

Abstract:
Text: ROHM CO LT]) 40E ■. 7 8 2 6 ^ » 000S3fi5 I RHM 3 2SA821 h 7 > y X ^ /'Transistors '7 ^ 2 7 - 0 ^ 7° ~ ^ P N P V U =l > h 7 > V X ^ /High Voltage Amp. Epitaxial Planar PNP Silicon Transistor 2SA821 • ftJF i\l'> £ l|/'D im en sio n s (U n it: mm) • « ft 1) V cER = - 2 1 0 V i : * i i£ E T 'f e 5 0 it o breakdown voltage: m m m â , 2SA821 NPQ O ROHm O O O - 87 00 00 DC CURREN GAIN : hFE T EMITTER


OCR Scan
PDF 000S3fi5 2SA821
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA821 TRANSISTOR (PNP) 1. EMITTER FEATURES High Breakdown Voltage Low Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -210 V VCEO Collector-Emitter Voltage -210 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.03 A PC


Original
PDF 2SA821 -150V
2sa1015

Abstract:
Text: 2SA821 2SA 457 s 2SA1015 2SA 467 s s: 2SA984 2SA1015 2SA952 2SA673AÍK) 2SA854 2SA 468


OCR Scan
PDF 2SA1015 2SA10Ã 2SA673 2sa1015 2SA603 2SA467 2SA821 2SA673 2SA638 2SA952 2SA854 2SA778 2SA1255
2010 - 50N240

Abstract:
Text: LOW-POWER SILICON PNP Item Number Part Number Manufacturer V(BR)CEO hFE Ie Max A) V) ,fT (Hz) V(BR)CBO PD Max Package Style V(BR)CEO MPS-A93 BF693 MPSA930 2N6432 PH5415 (A) PH5415 (A) PN5415 PN5415 2SB718 BSS74S A FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 2SA1376AK 2SB1349 (A) 2SA1485 2SA1210 JE9093 2SA1376AU JE9093B 2SB1245 (A) JE9093C 2SA806 2SA821 2SA821 2N4357 2N4358 BF492 BF4920 BFQ38S HSE194 BF416 BF423L 2N6518 BSS75 BFQ36 BFN25 BSS78 BSS78 BSS78


Original
PDF MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 HSE194 JE9093C LOW-POWER SILICON PNP
2SA821

Abstract:
Text: Transistors 2SA821S 2SC1651S I 1 High-voltage Amplifier Transistor ( -210V, -30mA) 2SA821S ·A b s o lu te maximum ratings (T a = 2 5 1 C) -2 1 0 V ) Param eter Collector-base vottaoe C ollector-em ltter voltage Emitter-base voltage C ollector current C ollector p ow er dissipation Symbol V cbo , (pieces) 2SA821 S PT PQ TP 5000 Junction tem perature Storage tem perature * RBE=10kQ ·E le c , voltage. (V c e o = 2 1 0 V ) 2 ) C om plem ents the 2SA821 S. (T a = 2 5 `C ) Symbol V cbo Lim


OCR Scan
PDF 2SA821S 2SC1651S --210V, --30mA) 2SA821S 2SA821 94L-519-C
2SA798

Abstract:
Text: -0.02 2SA817A ms LF A -80 -80 -0.4 0.8 -0. 1 -50 70 240 -2 -0.05 -0.4 -0. 2 -0.02 2SA821 O— A HV A , (TO-92MOD) ECB 2SA817A 50* -5 -0.002 8* TO-92® ECB 2SA821 180* -5 -0.01 6. 5* T0


OCR Scan
PDF 2sa719 2SA720A 2SA732 2SA733 2SA733 2SA806 2SC1622A 2SA811A 2SC1623 SC-59) 2SA798 2SA785 2SA778AK 2sc1567 2SA779K 2SA778K 2SA777 2SA748 2SA743A
2002 - datasheet of ic 555

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.25 WTamb=25 Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1.EMITTER 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise conditions specified MIN


Original
PDF 2SA821 O--92 270TYP 050TYP datasheet of ic 555 IC 555 2SA821
2SA821

Abstract:
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA821 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


Original
PDF 2SA821 -150V, 2SA821
2004 - 2SA821

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


Original
PDF 2SA821 -150V, 2SA821
2SA970

Abstract:
Text: 2SA1207 2SA970 2SA638 2SA778ÍK) 2SA1018 2SA821 2SA 695 ^ h m 2SB698 2SA950 2SA952 2SB562 2SA719


OCR Scan
PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA970 2SA934 2SA720 2SA836 2sa952 2sa933 2SA705
C2021M

Abstract:
Text: \2SC4036 2SC3270M 2SC4015 2SB1460 ( 2SA821 \ 2SC1651 2SA1835S 2SC3415 2SC3269 2SB1425 2S02159 , -Ic / V dss -Id TO -92 N te o M 15 19 2SC1800 2SC3801* 2SA821 ® 2SC1651# 2SA825# 2SA1039 2SC2808


OCR Scan
PDF 2SC2021LJNE) 2SB821 2SA937ALN \2SC2021LN 2SB1276 2021M 2SA937AM 2SB737 2SD786 2SA1137 C2021M B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2SC2673
1651S

Abstract:
Text: Transistors 2SA821S 2SC1651S High-voltage Amplifier Transistor ( -210V, -30mA) I 2SA821S ·A b s o lu te maximum ratings ( T a = 2 5 t ) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Type Package hFE Code Basic ordering unit (pieces) 2SA821 SPT PQ TP 5000 * R be - 1 , the 2SA821 S. ·P a c ka g in g specifications and hre Type Package hFE Code Basic ordering unit


OCR Scan
PDF 2SA821S 2SC1651S --210V, --30mA) 2SA821S 2SA821 2SC1651 O-220, 0Dlb713 O-220FN 1651S 2sC1651 transistor
2SD1960

Abstract:
Text: Indicator Drive 2SA821 - -210* -30 - 250 - 56—270 -3 -5 - High Voltage SW 2SC16S1 - 210* 30 - 250 -


OCR Scan
PDF 00G7427 2SA1137 2SB737 2SD786 2SD786S 2SA825 2SA825S 2SA933A 2SA933AS 2SA933ALN 2SD1960 2SD1468 2SC1740 transistor L120A transistor 2sc1740
2SA936

Abstract:
Text: Indicator Drive High Voltage SW SW Chroma 2SD1960 2SA821 2SC1651 - 8000 - 750 250 250 -


OCR Scan
PDF 2SA1137 2SB737 2SD786 2SA825 2SA933A 2SA933ALN 2SA1038 2SA1039 2SA1198 2SC1740 2SA936 2SA1585S 2SC3359 2sc4044s 2SD786S
2S0786

Abstract:
Text: 2SD1468 Strobo Flash Indicator Drive High Voltage SW SW Chroma 2SD1960 2SA821 2SC1651 2SC3415 2SAB30


OCR Scan
PDF 2SA1137 2SB737 2S0786 2SA825 2SA933 2SA933LN 2SAW38 2SA1039 2SA1198 2SC1740 2SA936 2SD1468
2SC2675

Abstract:
Text: A2SA820 —180* -30 250 50 8.0 56-270 TO-92 Fig. 18 2SA821 -210* -30 250 50 8.0 56-270 TO-92 Fig. 18


OCR Scan
PDF 2SA1137 2SB737 2SD786 2SD786S 2SA825 2SA825S 2SA933 2SA933S 2SA933LN 2SA933SLN 2SC2675 2SC3359 2SC2808 J0801 2SA1515
A 933 S transistors

Abstract:
Text: ( ? 7 T r a n s s tors TO-92, S PT (TO-92S) Types Type TO-92 2SA 1137 2SB 737 2 S 0 78 6 2SA825 2SA 933 2S A 933LN 2S A 1038 2 S A 1039 2SA 1198 2SC1740 2SC 1740LN 2SC2389 2SC 2390 2SC2808 - 2 S A 854 2 S A 1199 2 S A 1515 2SC1741 2SC 1741A 2SC2872 2SC3359 2SC3377 - - 2 S B 1426 - 2SD2152 2SD 1468 2SD1960 2SA821 2SC1651 - 2SC 3415 2SA 830 2SA936 2SC1645 2SC2062 2SD2132 - - 2SD2144S 2 S A830S - 2SC164SS D arlington 2SD786S 2 S A 825S 2 S A 933S 2S A 933S LN - - 2S A 1198S 2SC 1740S 2SC


OCR Scan
PDF O-92S) 2SA825 933LN 2SC1740 1740LN 2SC2389 2SC2808 2SC1741 2SC2872 2SC3359 A 933 S transistors A933S A830-S a830s A854S 2SC1645 2sc low noise 2SD 92 M 2SA933LN
2S0786

Abstract:
Text: SW SW 2SD1960 - 2SA821 2SC1651 - Chroma Darlington High hpE High Vebo Note : Emitter center 2SC3415 2SA830 2SA936 2SC1645 2SC2062 2S02132 - 2SD2470 2SA821S 2SC1651S 2SA1835S 2SC3415S


OCR Scan
PDF 2SA1137 2SA1137S 2S8737 2S0786 2S0786S 2SA825 2SA825S 2SA933A 2SA933AS 2SA933ALN 2SA1835 2SA654 2SC17406
Supplyframe Tracking Pixel