The Datasheet Archive

2SA815 datasheet (16)

Part Manufacturer Description Type PDF
2SA815 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SA815 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SA815 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA815 Others Basic Transistor and Cross Reference Specification Scan PDF
2SA815 Others Transistor Replacements Scan PDF
2SA815 Others Japanese Transistor Cross References (2S) Scan PDF
2SA815 Others Cross Reference Datasheet Scan PDF
2SA815 Others Shortform Transistor PDF Datasheet Scan PDF
2SA815 Others Semiconductor Master Cross Reference Guide Scan PDF
2SA815 Others Transistor Substitution Data Book 1993 Scan PDF
2SA815 Others The Japanese Transistor Manual 1981 Scan PDF
2SA815 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA815 Others Shortform Transistor Datasheet Guide Scan PDF
2SA815 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA815 Toshiba Japanese Transistor Data Book Scan PDF
2SA815 Toshiba SILICON PNP EPITAXIAL BASE MESA TYPE Scan PDF

2SA815 Datasheets Context Search

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2005 - 2SA814

Abstract: 2SA815
Text: JMnic Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION , Collector-base voltage -120 Open base 2SA815 VEBO Emitter-base voltage V -100 2SA814 Collector-emitter voltage UNIT -120 Open emitter 2SA815 VCEO VALUE V -100 Open collector , -55~150 TC=25 JMnic Product Specification 2SA814 2SA815 Silicon PNP Power , =0 2SA815 V(BR)EBO MIN V -100 Emitter-base breakdown voltage IE=-1.0mA ,IC


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PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 c00mA; 2SA815
2Sa814

Abstract: 2sa815 2sA814 datasheet
Text: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors , VCBO Collector-base voltage -120 Open base 2SA815 VEBO Emitter-base voltage V -100 2SA814 Collector-emitter voltage UNIT -120 Open emitter 2SA815 VCEO VALUE V -100 , 2SA814 2SA815 Silicon PNP Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified , . MAX UNIT -120 IC=-10mA ,IB=0 2SA815 V(BR)EBO MIN V -100 Emitter-base breakdown


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PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 2sa815 2sA814 datasheet
2SA814

Abstract: 2SA815 AAIN 25T2
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 , =25T2) SYMBOL PARAMETER CONDITIONS VALUE UNIT VcBO Collector-base voltage 2SA814 Open emitter -120 V 2SA815 -100 VcEO Collector-emitter voltage 2SA814 Open base -120 V 2SA815 -100 Vebo Emitter-base voltage , : aoksemic@msn.com 1/3 AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 , Collector-emitter 2SA814 lc=-10mA ,Ib=0 -120 V breakdown voltage 2SA815 -100 V(br)ebo Emitter-base breakdown


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PDF 2SA814 2SA815 O-220 2SC1624/1625 2SA815 -500mA; -50mA AAIN 25T2
2SA814

Abstract: 2SA815 2SC1624 2SC1625 AC75
Text: ’?- f~7 - i \\ - 2SA814' 2SA815 SILICON PNP EPITAXIAL BASE MESA TYPE MEDIUM POWER AMPLIFIER , =-1'20V (2SA814) : VCE0=-100V ( 2SA815 ) . Complementary to 2SC1624 and 2SC1625. ELECTRICAL CHARACTERISTICS (Ta=25°C) -CHARACTERISTIC SYMBOL RATING UNIT' Collector-Base Voltage 2SA814 VCBO -120 . V 2SA815 -100 Collector-Emitter Voltage 2SA814 VCEO . -120 V 2SA815 -100 Emitter-Base Voltage VEB0 -5 . - >v Collector , 2SA815 -100 - - Emitter-Base -Breakdown Voltage V(BE)EB0 lE=-lni?C lc=0 -5 " - V DC Current Gain


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PDF iG17SSQ 2SA814' 2SA815 2SA814) -100V 2SA815) 2SC1624 2SC1625. 2SA814 2SA815 2SC1625 AC75
2SA814

Abstract: 2SC1625 2SA815 2SC1624 AC75 MAC-75 A0754
Text: ) VQE0 = —100V ( 2SA815 ) 2SC1624 .2SC1625 i 3 / ? M V # J It 4 { i t, Complementary to 28G1624 and , » —-X M * Œ 2SA814 VCBO — 12 0 V 2SA815 — 10 0 3 IX 9 fi 'I-J^i M « Œ 2SA814 V CEO — 12 0 V 2SA815 — 10 0 ^ Ì y fi ■VBBO — 5 V = * mat Io- - 1 A x i 5- ^ Sit 1 A n (Te = , According to the value of h-p-g, ^ the 2SA814 and 2SA815 are classified as follows. CLASSIFICATION MIN , 2sa814 2sa815 STATIC CHARACTERISTICS IC~vOE (L0W CURRENT REGION) -2-4-6-8 -10 -12 vCE (v) hFE


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PDF -180V 2SA814) 2SA815) 2SC1624 2SC1625 28G1624 2SC1625 2SA814 2SA815 2SA815 2SC1624 AC75 MAC-75 A0754
500ma 40v pnp

Abstract: 2sA814 datasheet 2SA814 2SA815
Text: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors , VCBO Collector-base voltage -120 Open base 2SA815 VEBO Emitter-base voltage V -100 2SA814 Collector-emitter voltage UNIT -120 Open emitter 2SA815 VCEO VALUE V -100 , 2SA815 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , -120 IC=-10mA ,IB=0 2SA815 V(BR)EBO MIN V -100 Emitter-base breakdown voltage IE


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PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 500ma 40v pnp 2sA814 datasheet 2SA815
2SA814

Abstract: 2SA815 2SA815 y 2SC1624
Text: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors , VCBO Collector-base voltage -120 Open base 2SA815 VEBO Emitter-base voltage V -100 2SA814 Collector-emitter voltage UNIT -120 Open emitter 2SA815 VCEO VALUE V -100 , temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA814 2SA815 , IC=-10mA ,IB=0 -100 2SA815 V(BR)EBO MIN Emitter-base breakdown voltage IE=-1.0mA ,IC


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PDF 2SA814 2SA815 O-220 2SC1624/1625 O-220) 2SA814 -500mA 2SA815 2SA815 y 2SC1624
2sc-1625

Abstract: 2sa814
Text: - 1 : VCEO=-100V ( 2SA815 ) . High Breakdown Voltage:, Vc E0=-1'2OV (2SA814) . Complementary , (Tc=25 .c) Dissipation · Junction Temperature Storage Temperature Range 2SA814 2SA815 2SA814 2SA815 , : 2SA814 2SA815 v SYMBOL ICBO lEBO (BR)CE0 TEST CONDITION, v Cb =-50v , íe =q ; . MIN


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PDF -100V 2SA815) 2SA814) 2SC1624 2SC1625. 2SA814 2SA815 2SA815 -100p 2sc-1625
761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SA684 2SB737 2SB927 2SB686 761-B
Text: 2SA1309A 2SA933S 2SB 760 fé t 2SA815 2SB703 2SB857 2SB1052 2SB1369 2SB 760A fé t 2SA815 2SB703 2SB859 2SB1052 2SB1085 2SB 760B fé t 2SA815 2SB703A 2SB859 2SB1052 2SB1085 2SB 761 fé t 2SB824


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PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
2SA815

Abstract: 2SC1625 2sc-1625
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA815 DESCRIPTION ·Collector-Emitter Breakdown Voltage:V(BR)CEO= -100(V)(Min.) ·Complement to Type 2SC1625 APPLICATIONS ·Medium power amplifier applications. ·Driver stage amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i w PARAMETER VCBO Collector-Base Voltage , Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA815


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PDF 2SA815 2SC1625 -50mA 2SA815 2SC1625 2sc-1625
2SC1624

Abstract: 2sc1625 2SA814 3c46 2SA815 AC75
Text: 2sc1624 * 2sc1625 k SILICON NPN EPITAXIAL BASE MESA TRANSISTOR o ^ntimsn o mm&tmmm o Medium Power Amplifier Applications o Driver Stage Amplifier Applications JSitflET-i-o = VCE0 = 120V (2SC1624) VCEO = 100V (2SC1625) 2SA814, 2SA815 I =< y 7" !) J ^ * !) K % & i -f-0 Complementary to 2SA814 and 2SA815 Ä MAXIMUM RATINGS CTa = 25 '0) Unit in mm •iaeias Î Fffl _L3 Q76 Z5 4 IO 1 " é < T" -ft- Ü (O cj CHARACTERISTIC SYMBOL RATING UNIT na. m £E 2SC1624 V CBO 120 V 2SC1625


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PDF 2sc1624 2sc1625 2SC1624) 2SC1625) 2SA814, 2SA815 2SA814 2SA815 2SC1624 2sc1625 3c46 AC75
2sa1015

Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
Text: 2SA815 2SA715 2SB1085 2SA 615 B a 2SB596 2SB1064 2SA 616_ b a 2SB507 2SB596 2SB856


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PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
2SA748

Abstract: 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2SB548 2sb861 2SA715
Text: .SA8M 2SA1127 2SA933 2SA 774A la t 2SA929 2SA1015 2SA844 2SA1127 2SA933 2SA 775 . B il 2SA815 2SB536


OCR Scan
PDF 2SA1705 2SB548 2SA715 2SA684 2SB1043 2SB817 2SA1232 2SB514 2SA985 2SA748 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2sb861 2SA715
2SA1019

Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SB549 2SA1115 F 2SB641 r 2sb618a
Text: 2SB861 2SB 631 V H ft 2SA815 2SB549 2SB648 2SA387 2SB1086 2SB 631K = ft 2SB549 2SB1086


OCR Scan
PDF 2SB764 2SA505 2SA673A 2SA684 2SA935 2SA879 2SB649 2SB1086A 2SB817 2SB775 2SA1019 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SB549 2SA1115 F 2SB641 r 2sb618a
2SC16

Abstract: 2sc1625 2SC1624 k1005 2SA8150
Text: I j ^ X B F m S C R E T E / O P T O } Sh DE I TDTTSSD GD074S3 3 2 S 2 S C C 1 6 2 4 1 1 6 2 5 , SILICON NPN PLANAR TYPE 9097250 TOSHIBA (DISCRETE/OPTO) 3 ô ü " 0 7 ` tî»3 1 0 l3 M A X . 0 3 -6 ± 0 -2 0 7^33-07 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: High Breakdown Voltage : Vq e o = 120V (2SC1624) Complementary to 2SA814 and 2SA815. 0 \ 1.5 MAX. 0 .7 6 CHARACTERISTIC Collector-Base Voltage


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PDF GD074S3 2SC1624) 2SA814 2SA815. 2SC1624 2SC1625 2SC16 2SC1624 k1005 2SA8150
2SB415

Abstract: sanyo 2sb509 NEC B 536 2SB557 TOSHIBA 2SB631 2sb631 hitachi 2sa966 2SA1284 2SA934 2SB661
Text: 2sb631 2sa815 2sa985 2sb647 2sa1110 2sb1086 2sb 528 - -. m 2sb631 2sa814 2sb546a 2sb647 2sa1110


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PDF 2sb507 2sb596 2sa1069 2sb856 2sb1291 2sb508 2sb632 2SB415 sanyo 2sb509 NEC B 536 2SB557 TOSHIBA 2SB631 2sb631 hitachi 2sa966 2SA1284 2SA934 2SB661
2SC16

Abstract: 2SC1624 SC1625 2SA814 2SA815 2SC1625 AC75
Text: ■^üibTTd:iscrete/optoî 2SC1624' 2SC1625, Sb DE J C]D|:]7ES0 [][)07MS3 3 | -r" SILICON NPN PLANAR TYPE 9097250 TOSHIBA 2SA815. T6U~"0Tt5»3 0 7^33-07 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 2SC1624 VCB0 120 V 2SC1625 100 Collector-Emi. tter Voltage 2SC16 24 VCEO 120 V 2SC16 25


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PDF 2SC1624' 2SC1625, 07MS3 2SC16 2SA814 2SA815. 2SC1624 2SC1625 SC1625 2SA815 2SC1625 AC75
2SA884

Abstract: 2sa835 2SA823 2SA899 2SA866 2SA810 2SA840 2SA852 2SA855 2SA809
Text: 2SA815 -100 -5 -1A 2SA816 -80 -5 -750 150 125 150 125 150 125 150 125 15W 150 (Tc


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PDF 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 2SA807 2SA808 2SA808A 2SA809 2SA884 2sa835 2SA823 2SA899 2SA866 2SA810 2SA840 2SA852 2SA855 2SA809
5AW transistor

Abstract: 2SA80 2SA807 2SA81 2SA814 2SA815 2SA817 2SC1601
Text: 15W (Tc=25"C) 150 1 50 70 - 240 5 150 5 -150 30 * 20 268 2SA815 t 3 > '< » 1626 » Si.E 80 5


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PDF 2SA814 2SA815 2SA81Ã 2SA817 2SA81& 100MHz) 5AW transistor 2SA80 2SA807 2SA81 2SA814 2SC1601
2sc1695

Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
Text: * 20 2SA814 (Tc=25ºC) 15W 2SC1625 100 5 1A 150 70-240 5 150 30* 20 2SA815 (Tc=25ºC) 15W


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PDF 2SC1601 2SC1602 2SC1603 2SC1604 2SC1605 2SC1605A 2SC1606 2SC1607 2SC1608 2SC1609 2sc1695 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
2010 - Tip300

Abstract: 2SA8140 2SA8150 BCX53 Rohm 2sa777 2sb631 hitachi 2SA815 2SA1358-Y MM4006 2SA1358Y
Text: 2SB631 2SAB15 2SA815 2SA8150 2N6556 PTC141 2SA1592 2SA815Y 2N3795 TIP300 2SA653 2N:'b8u 2SB631K 2SA814


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PDF 202AC 220AB 126var Tip300 2SA8140 2SA8150 BCX53 Rohm 2sa777 2sb631 hitachi 2SA815 2SA1358-Y MM4006 2SA1358Y
2010 - 2N3633

Abstract: TIP300 2SA8140 2N3609 2N3606 2sb631 hitachi sk3025 2N3519 2N3566 BCX53 Rohm
Text: 2SB631 2SAB15 2SA815 2SA8150 2N6556 PTC141 2SA1592 2SA815Y 2N3795 TIP300 2SA653 2N:'b8u 2SB631K 2SA814


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PDF
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 2SA1241 2SA507 2SA1015 2SA815 2SA1837 2SA1263 2SA1263N 2SA508 2SA1015 2SA816


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2010 - 2n4889

Abstract: 2N4418 2N4858 TEXAS 2sb631k 2N6556 2N4417 6ae diode 2SA8150 2N4917 2n4891
Text: 2SB631 2SAB15 2SA815 2SA8150 2N6556 PTC141 2SA1592 2SA815Y 2N3795 TIP300 2SA653 2N:'b8u 2SB631K 2SA814


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PDF
b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: 2SA740 2SA740A 2SA767 2SA776 2SA776A 2SA814 2SA815 2SA816 2SA818 2SA839 2SA841 2SA841TM R eco m m en d


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PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
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