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2SA812M4A NEC Electronics Group Bristol Electronics 640 $1.80 $0.63

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2SA812-M4 datasheet (6)

Part Manufacturer Description Type PDF
2SA812M4 NEC PNP Silicon Epitaxial Transistor Mini Mold Original PDF
2SA812M4 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA812M4 Others Shortform Transistor PDF Datasheet Scan PDF
2SA812M4 Others Semiconductor Master Cross Reference Guide Scan PDF
2SA812M4 Others Shortform Transistor Datasheet Guide Scan PDF
2SA812M4 NEC PNP Silicon Epitaxial Transistor Mini Mold Scan PDF

2SA812-M4 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 transistor SOT-23 marking code M6
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SA812 Pb Commplementary to 2SC1623. Lead-free High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) High Voltage: VCEO=-50V APPLICATIONS Audio frequency, general purpose amplifier SOT-23 ORDERING INFORMATION Type No. Marking 2SA812 Package Code M4 /M5/M6/M7 SOT , (1) Range M4 M5 M6 M7 Marking 90-180 135-270 200-400 300-600


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PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 transistor SOT-23 marking code M6
2008 - 2SA812

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain:90 hFE 600 , CLASSIFICATION OF hFE Marking M4 M5 M6 Range 90-180 135-270 200-400 300-600 .031


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PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain:90 hFE 600 , NOTE Suggested Solder Pad Layout CLASSIFICATION OF hFE Marking M4 M5 M6 Range


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PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23
2008 - 2SA812-M7

Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 PNP Silicon Epitaxial Transistors SOT-23 Features · x x · · Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain:90 hFE600.(VCE=-6.0V, IC=-1mA) High voltage: VCEO=-50V Epoxy meets UL 94 V , -600 -0.3 -0.68 -Vdc Vdc MHz CLASSIFICATION OF hFE Marking Range M4 90-180 M5 135-270 M6 200-400


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PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 hFE600. 2SA812-M7 2SA812M5 2SA812 2SA812M6
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain:90 hFE 600 , NOTE Suggested Solder Pad Layout CLASSIFICATION OF hFE Marking M4 M5 M6 Range


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PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23
2007 - m6 marking transistor sot-23

Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SA812 Pb Commplementary to 2SC1623. Lead-free High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) High Voltage: VCEO=-50V APPLICATIONS Audio frequency, general purpose amplifier SOT-23 ORDERING INFORMATION Type No. Marking 2SA812 Package Code M4 /M5/M6/M7 SOT , M4 M5 M6 M7 Marking 90-180 135-270 200-400 300-600 Document number: BL


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PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23
m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Text: fT Cob VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE Rank Range Marking M4 90-180 M4 M5 135-270


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PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
2001 - 2SA812

Abstract: Diode marking m7 m6 marking sot-23
Text: MHz - CLASSIFICATION hFE Range 90-180 135-270 200-400 300-600 Marking M4


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PDF 2SA812 OT-23 08-Dec-06 -10mA OT-23 2SA812 Diode marking m7 m6 marking sot-23
2SA812

Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Text: Marking M4 M5 M6 M 7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 Marking / 1. Emitter 2. Base 3 , Classification Marking M4 MR Mfi M7 h FF 90 to 180 13R tn 270 200 tn 400 300 to 600 Document No. TC , . M4 92.6


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PDF 2SA812 2SA812 2SC1623 MEI-1202 TC-5166 ic 926
smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: -Q 2SA1577-R 2SA1736 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 2SB1073-Q 2SB1073-R 2SB1132-P 2SB1132 , A S51 S72/7002 K72 FQ FR FS SG SO SY DO DY NO NY FQ FR FS HP HQ HR LD M4 M5 , KM2/M2 KM2/M2 KM3/M3 KM3/M3 KM4/ M4 KM4/ M4 5D K1P K27 K6N KAP K3N KAR K46 K2X K2T , H1 H2 H3 H5 J1 J3 J5 K1 K2 K4 K5 M1 M2 M3 M4 C1 C2 MMXZ5223B MMXZ5225B , K4 K5 M1 M2 M3 M4 1P ZT2907A D3A D3E D3B D3C D3L 3T D2E D3Q 2 4 E B D F C D


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PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Not Available

Abstract: No abstract text available
Text: ) IC = -100 mA, IB = -10 mA 200 V 2% hFE Classification Marking hFE M4 90 180


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PDF 2SA812 OT-23
2SA812

Abstract: 2SC1623 TC-5166
Text: -0.3 V PW350 µ s, Duty Cycle2% hFE hFE M4 M5 M6 M7 90180 135270


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PDF 2SA812 D17119JJ4V0DS M8E02 2SA812 2SC1623 TC-5166
2SA812

Abstract: TC-5166 2SC1623 TC-5166B TC516 2SC1623 marking
Text: -0.68 V -0.18 -0.3 V PW350 µ s, Duty Cycle2% hFE hFE M4 M5 M6 M7


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PDF 2SA812 C11531J 2SC1623 D17119JJ4V0DS M8E02 2SA812 TC-5166 2SC1623 TC-5166B TC516 2SC1623 marking
smd transistor m6

Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
Text: Classification Marking hFE M4 90 180 M5 135 270 M6 200 400 M7 300 600


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PDF 2SA812 OT-23 temperat100 smd transistor m6 transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
2SA81

Abstract: 2sA812R
Text: 2 % h p E Classification 2SA812 MARK hFE 2SA812R M3 3M 6 0-12 0 M4 4M 9 0 - 180 M5 5M 1 3 5 -2 7


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PDF 2SA812 2SA812R 2SC1623 2SA81 2sA812R
2SA812

Abstract: 2sa812 transistor
Text: Marking Range M4 M5 M6 M7 90-180 135-270 200-400 300-600 WEJ ELECTRONIC CO


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PDF 2SA812 OT-23-3L -10mA 2SA812 2sa812 transistor
NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Text: = 0 A, f = 1.0 MHz Note Pulsed: PW 350 µs, Duty Cycle 2% hFE CLASSIFICATION Marking M4


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PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984
2005 - 2SA812

Abstract: 2SC1623
Text: 1.0 MHz Note Pulsed: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Marking M4 M5 M6 M7


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PDF 2SA812 2SC1623 2SA812 2SC1623
2004 - marking of m7 diodes

Abstract: 2SA812
Text: Collector-emitter saturation voltage IC=0 90 600 180 MHz CLASSIFICATION OF hFE Marking Range M4


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PDF OT-23-3L 2SA812 OT-23-3L -10mA marking of m7 diodes 2SA812
2SA812

Abstract: No abstract text available
Text: arking hFE M4 90 to 180 M5 135 to 270 M6 200 to 400 M7 300 to 600 Document No. TC


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PDF 2SA812 2SC1623 IEI-1209) 2SA812
2006 - m6 marking transistor sot-23

Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Text: =-10V,IE=0,f=1MHz MHz pF CLASSIFICATION OF hFE Rank Range Marking M4 M5 M6 M7 90-180 135-270 200-400 300-600 M4 M5 M6 M7 Jiangsu Changjiang Electronics


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PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
2006 - Not Available

Abstract: No abstract text available
Text: Marking M4 M5 M6 M7 90-180 135-270 200-400 300-600 M4 M5 M6 M7 A


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PDF OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA
2003 - Not Available

Abstract: No abstract text available
Text: 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE CLASSIFICATION OF hFE Marking Range M4


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PDF 2SA812 hFE600. OT-23 60Vdc -10mAdc)
smd k72 y5

Abstract: K72 y8 k72 y4 SMBJ11CA SMBJ8.5CA BAS70WT 46A gez k72 smd marking f5 sot-89 sk 75 dgm
Text: -Q 2SA1577-R 2SA1736 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 2SB1073-Q 2SB1073-R 2SB1132-P 2SB1132 , HQ HR LD M4 M5 M6 M7 IQ IR BAP BAQ BAR BCP BCQ BCR AHP 2SB1197-Q 2SB1197 , -123 KK5/K5 KM1/M1 KM1/M1 KM2/M2 KM2/M2 KM3/M3 KM3/M3 KM4/ M4 KM4/ M4 5D K1P K27 K6N KAP K3N , F4 F5 H1 H2 H3 H5 J1 J3 J5 K1 K2 K4 K5 M1 M2 M3 M4 C1 C2 C3 C5 G1/D1 G2/D2 G3 , M2 M3 M4 1P PZT2907A RB400DS RB411DS RB420DS RB421DS RB425DS RB480KS RB491DS RB495DS


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PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 SMBJ11CA SMBJ8.5CA BAS70WT 46A gez k72 smd marking f5 sot-89 sk 75 dgm
2SA812

Abstract: No abstract text available
Text: IC=0 90 600 180 MHz CLASSIFICATION OF hFE Marking Range M4 M5 M6 M7


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PDF OT-23-3L 2SA812 OT-23-3L -10mA 2SA812
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