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2SA671 datasheet (33)

Part Manufacturer Description Type PDF
2SA671 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
2SA671 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SA671 Micro Electronics Semiconductor Device Data Book Scan PDF
2SA671 Mospec POWER TRANSISTORS(3.0A,50V,25W) Scan PDF
2SA671 Mospec PNP Silicon Power Transistor Scan PDF
2SA671 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SA671 Others Semiconductor Master Cross Reference Guide Scan PDF
2SA671 Others Transistor Substitution Data Book 1993 Scan PDF
2SA671 Others The Japanese Transistor Manual 1981 Scan PDF
2SA671 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA671 Others Shortform Transistor Datasheet Guide Scan PDF
2SA671 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA671 Others Basic Transistor and Cross Reference Specification Scan PDF
2SA671 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA671 Others Basic Transistor and Cross Reference Specification Scan PDF
2SA671 Others Transistor Replacements Scan PDF
2SA671 Others Transistor Replacements Scan PDF
2SA671 Others Shortform Transistor PDF Datasheet Scan PDF
2SA671 Others Japanese Transistor Cross References (2S) Scan PDF
2SA671 Others Cross Reference Datasheet Scan PDF

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2sa671

Abstract:
Text: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency power amplifier applications , 2SA671 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SA671 -


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PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2sa671 2SC1061 2sa671 equivalent 2SC1061 PNP
2SA670

Abstract:
Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION • With T0220 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS • Designed for use in low frequency power amplifier applications PINNING , 1/3 AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA671 , Product Specification Silicon PNP Power Transistors 2SA671 PACKAGE OUTLINE E-mail :aoksemic@yahoo. com.cn


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PDF 2SA671 T0220 2SC1061 2SA670 2SC1061
2005 - 2SA671

Abstract:
Text: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 , PARAMETER Thermal resistance from junction to case JMnic Product Specification 2SA671 Silicon , . MAX UNIT 320 MHz JMnic Product Specification 2SA671 Silicon PNP Power


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PDF 2SA671 O-220 2SC1061 2SA670 O-220) 2SA671 2SC1061 2SC1061 PNP
Not Available

Abstract:
Text: J.S.11S.U <~>z)ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A • DC Current Gain : hFE= 35-320® lc= -0.5A • Complement to Type 2SC1061 PIN 1.BASE J. COLLECTOR TO-220C package , current before placing orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671


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PDF 2SA671 2SC1061 O-220C -50mA
2sc1060

Abstract:
Text: V y =J > NPN HSîÈtSB 2SA670, 2SA671 £ 3 > * > $ V SILICON NPN TRIPLE DIFFUSED_ LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 2SC1060 2SC1061 -11.27 ^3.0max. 1. ^ - * .'Base 2. : Collector (7 7 > £/) (Flange) 3. x J -y ^ : Emitter (Dimensions in mm) 03.6+0. t 1.27 3.0 max. (JEDEC TO-220AA) (JEDEC T0-220AB) «g^g^SÎS ABSOLUTE MAXIMUM RATINGS (To=25°C ) m i Symbol 2SC1060, 2SC1061 Unit u U 9 ? - - x H S Vcfio 50 V V 7 ? * i ì •/ 9 1 J VcÂ


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PDF 2SA670, 2SA671 2SA670 2SC1060 2SC1061 O-220AA) T0-220AB) 2SC1060, 2SC1061 2sc1060 2SA671 JE1A TO-220-AA to220aa 2SCI061 TO-220AA
2SC1061

Abstract:
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO , isc Silicon PNP Power Transistor 2SA671 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise


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PDF 2SA671 2SC1061 2SC1061 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
2SC1061 f

Abstract:
Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A • DC Current Gain : hFE= 35-320® lc= -0.5A • Complement to Type 2SC1061 PIN 1.BASE 1. COLLECTOR 3. EMITTER TO-220C package , orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA671 ELECTRICAL


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PDF 2SA671 2SC1061 O-220C -50mA 2SC1061 f
60B120

Abstract:
Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE(satf 10V(Max> @iC=2 0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061 MAXIMUM RATINGS Characteristic Symbol 2SA671 Unit Collector-Emitter Voltage vCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage , \ °0 25 50 75 100 125 150 Tc , TEMPERATURE^ C) PNP 2SA671 3.0 AMPERE SILICON POWER TRANASISTORS


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PDF 2SC1061 2SA671 60B120 2SC1061
2SC1061

Abstract:
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO , Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 ELECTRICAL


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PDF 2SA671 2SC1061 2SC1061 2SA671 Transistor 2sC1061 2sA671 transistor 2sC1061 transistor 2SC1061 PNP
2SC1061

Abstract:
Text: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25) SYMBOL PARAMETER TOR UC OND CONDITIONS EMIC VALUE UNIT


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PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2SA671 2sc1061 datasheet
2SC1061

Abstract:
Text: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5 -3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic


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PDF 2SA671 O-220 2SC1061 2SC1061 2SA671 2sA671 transistor transistor 2SC1061
2SC1061

Abstract:
Text: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage


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PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2SA671 2SC1061 C 2SC1061-C
2SA671

Abstract:
Text: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 80 80 5 4 30 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic


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PDF 2SD526 O-220 2SA671 2SA671 2SD526 NPN 80V 3A transistor 2SD526
2005 - 2SC1061

Abstract:
Text: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open


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PDF 2SC1061 O-220 2SA671 2SC1060 2SC1061 2SA671 2Sc1060 equivalent 2SC1061 C
2SC1061

Abstract:
Text: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 50 7 3 25 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic


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PDF 2SC1061 O-220 2SA671 2SC1061 transistor 2SC1061 2SA671 2sc1061 npn transistor 2sc1061 npn transistor datasheet
2sb526

Abstract:
Text: 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400


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PDF 2SB513A O-220 2SD366A 2SB514 2SD330 2SB515 2SD331 2SB523 2sb526 2SC789 2SB529 2SC1060 2SB566AK 2SD476AK
2SC789

Abstract:
Text: Power Transistors type no. polarity case maximum ratings min hfe vce(sat) ft min (MHz) complementary type pd IW) 'c (a) V ceo (V) max 'c (a) vce (V) max (V) ■c (a) 2SC789 N TO-220 30 4 60 40 240 # 0.5 5 1.5 3 3 2SA489 2SC790 N TO-220 25 3 40 40 240 # 0.5 2 1.4 2 3 2SA490 2SC1060 N TO-220 25 3 50 35 320 # 0.1 4 10 2 3 2SA670 2SC1061 N TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SA671 2SC1173 N TO-220 10 3 50 40 400 # 0.5 2 0.8 2 10C 2SA473 2SC1626 N TO-220 10 0.75 80 70 240 #


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PDF 2SC789 O-220 2SA489 2SC790 2SA490 2SC1060 2SA670 2SC1061 2SC1626 2SC1173 2SA671 2SA670 2SA490 2SA489 2SA473
2SC1061

Abstract:
Text: /&MOSPEC NPN SILICON POWER TRANSISTORS .designed for use in low frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage vCE(satf 10V(Max) @Ic=2.0A,Ib=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to PNP 2SA671 MAXIMUM RATINGS Characteristic Symbol 2SC1061 Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage vCBO 50 V Emitter-Base Voltage vEBO 4.0 V Collector Current - Continuous - Peak 'c 'cm 3.0 8.0 A Base current >B 0.5 A Total Power


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PDF 2SA671 2SC1061 transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 f 2SC1061 PNP L50C power Transistor 2SC1061
2sb526

Abstract:
Text: 0.1 0.5 0.15 0.5 0.5 0.5 0.5 2SD 476A K 2SA 489 2SA 490 2SA670 2SA671 2SA473 2SA 816 2SB 434 2SB435


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PDF 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566A 2SC789 2SC790 2SC1060 2SA816 2SD359 2SD476AK 2SB566AK
2n6125

Abstract:
Text: 2N6476 2SA473 2SA490 2SA670 2SA671 2SA816 P P P P P TO-220 TO-220 TO-220 TO-220 TO


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PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125
2sc1061

Abstract:
Text: 7 3 3 3 3 100 50 1.5+ 1.5+ 35+ 35+ 8+ 8+ 8+ 8 - - 2SD476AK 2SA489 2SA490 2SA670 2SA671 2SA473


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PDF 2SB513 2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566AK 2SC789 2SC790 2sc1061 2sd331
2SB512P

Abstract:
Text: 2SC790 2SA670 P TO-220 25 3 50 35 320 # 0.1 4 1 2 3 2SC1060 2SA671 P TO-220 25 3 50 35 320 # 0.1 4 1 2


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PDF MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 2sb435 TIP298 MH8500 2sc1060
2sc1061

Abstract:
Text: Power Transistors TYPE POLA CASE NO. RITY D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 TIP29 TIP29A T1P29B TIP30 TIP30A TIP30B TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B T1P32C 2N6121 2N6122 2N6123 2N6124 2N6125 2N6126 2N6129 2N6130 2N6131 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 2N6473 2N6474 2SA473 2SA490 2SA670 2SA671 2SA816 2SB434 2SB435 2SB512 2SB512A P P P P P N N N N N N N N P P P N N N N P P P P N N N P P P N N N N N N N N N N N P P P P P P P P P TO-220 TO-220 TO


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PDF D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2N6108 2SC1626
2SA616

Abstract:
Text: 2SA657A 2SA658 2SA658A 2SA659 2SA661 2SA663 2SA666 2SA666A 2SA668 2SA669 2SA670 2SA671 2SA672


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PDF 2SA603 2SC943 2SA604 2SA605 2SA606 2SC959 2SA607 2SC960 2SA608 2SA609 2SA616 2SC1014 2sa620 2SA688 2SC1079 2SC634A 2SA678 2SA628A 2SC1013 2SC1008A
2sc1093

Abstract:
Text: * 100 2SA671 2 1 1 3 6 10 3 50 65 500 500 400* 800* 1 500* 40 1800* 500 400* 1.4


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PDF 2SC1002 2SC1003 2SC1004 2SC1004A 2SC1005 2SC1005A 2SC1006 2SC1007 2SC1008 2SC1008A 2sc1093 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003
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