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2SA1736(TE12L,F) Toshiba America Electronic Components Chip1Stop 6,950 $2.35 $1.92

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2SA1736 datasheet (10)

Part Manufacturer Description Type PDF
2SA1736 Kexin Power Switching Applications Original PDF
2SA1736 Micro Commercial Components TRANS GP BJT PNP 50V 3A 3SOT-89 Original PDF
2SA1736 TY Semiconductor Power Switching Applications - SOT-89 Original PDF
2SA1736 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1736 Others Catalog Scans - Shortform Datasheet Scan PDF
2SA1736 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1736 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1736 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1736 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
2SA1736 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF

2SA1736 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1736

Abstract: 2SC4541
Text: 2SA1736 PNP (PCT) 2SA1736 · : mm · : VCE (sat) = -0.5 V () (IC = -1.5 A) · , : (//) ( / ) () () 1 2006-11-07 2SA1736 (Ta = 25 , VCC = -30 V () L No. D (: : ) 2 2006-11-07 2SA1736 IC ­ VCE hFE ­ , IC -300 -1000 -3000 (mA) 2006-11-07 2SA1736 IC ­ VBE -10 -3.0 IC max , 2006-11-07 2SA1736 20070701-JA · · " " · · · RoHS RoHS


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PDF 2SA1736 2SC4541 SC-62 20070701-JA 2SA1736 2SC4541
2003 - 2SA1736

Abstract: 2SC4541
Text: 2SA1736 PNP (PCT) 2SA1736 · : mm · : VCE (sat) = -0.5 V () (IC = -1.5 A) · , 2009-12-21 2SA1736 (Ta = 25 , 2009-12-21 2SA1736 IC ­ VCE hFE ­ IC -4 1000 Ta = 100°C hFE 300 -30 -3 , -30 -100 3 IC -300 -1000 -3000 (mA) 2009-12-21 2SA1736 IC ­ VBE , Ta 120 140 160 (°C) 4 2009-12-21 2SA1736 · · ·


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PDF 2SA1736 2SC4541 SC-62 2SA1736 2SC4541
2004 - 2SA1736

Abstract: 2SC4541
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , 2SA1736 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2004-07-07 2SA1736 IC ­ VCE hFE ­ IC -4 1000 300 hFE -3 Ta = 100°C Ta = 25 , 2SA1736 IC ­ VBE Safe Operating Area -10 -3.0 IC max (pulse)* IC max (continuous) Common , ) 4 2004-07-07 2SA1736 RESTRICTIONS ON PRODUCT USE 030619EAA · The information


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PDF 2SA1736 2SC4541 2SA1736 2SC4541
2SA1736

Abstract: 2SC4541
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1736 , 2006-11-09 2SA1736 IC ­ VCE hFE ­ IC -4 1000 -3 Ta = 100°C Ta = 25°C -80 -60 , -30 -100 -300 Collector current IC 3 -1000 -3000 (mA) 2006-11-09 2SA1736 , 100 120 140 160 Ambient temperature Ta (°C) 4 2006-11-09 2SA1736 RESTRICTIONS


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PDF 2SA1736 2SC4541 2SA1736 2SC4541
2002 - Not Available

Abstract: No abstract text available
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1736 Electrical Characteristics (Ta = 25 , % VCC = -30 V 0.1 Marking Type name LD 2 2002-08-13 2SA1736 IC ­ VCE -4 Common , Collector current IC (mA) Collector current IC (mA) 3 2002-08-13 2SA1736 IC ­ , 2SA1736 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SA1736 2SC4541 SC-62
Not Available

Abstract: No abstract text available
Text: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25 Parameter , 0.2 ìs 0.1 4008-318-123 1 of 3 SMD Type Product specification 2SA1736 Test , sales@twtysemi.com 4008-318-123 2 of 3 SMD Type Product specification 2SA1736 http://www.twtysemi.com


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PDF 2SA1736 2SC4541 -75mA -100mA
2002 - Not Available

Abstract: No abstract text available
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1736 Electrical Characteristics (Ta = 25 , % VCC = -30 V 0.1 Marking Type name LD 2 2002-08-13 2SA1736 IC ­ VCE -4 Common , IC (mA) Collector current IC (mA) 3 2002-08-13 2SA1736 IC ­ VBE -3.0 Common , 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-08-13 2SA1736


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PDF 2SA1736 2SC4541 SC-62
2SA1736

Abstract: 2SC4541 marking HE M2X marking
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U n it in mm 1.6MAX. -j- , Type Name LD m 1 2 001 10-29 - TO SH IBA 2SA1736 ELECTRICAL CHARACTERISTICS (Ta = , E (sat) (V) < d d o O O NJ NJ VO TO SH IBA 2SA1736 ic - VRE SAFE , * COLLECTOR-EMITTER VOLTAGE PC - Ta 4 2 001 10-29 - TO SH IBA 2SA1736 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1736 2SC4541 2SA1736 2SC4541 marking HE M2X marking
2009 - 2SA1736

Abstract: 2SC4541
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , report and estimated failure rate, etc). 1 2009-12-21 2SA1736 Electrical Characteristics (Ta = , electronic equipment. 2 2009-12-21 2SA1736 IC ­ VCE hFE ­ IC -4 1000 -3 Ta = 100 , ) 2009-12-21 2SA1736 Safe Operating Area IC ­ VBE -10 -3.0 Common emitter VCE = -2 V -2.5 , 2SA1736 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SA1736 2SC4541 2SA1736 2SC4541
2SA1736

Abstract: 2SC4541
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U n it in mm 1.6MAX. -J- , ) LD m 1 2 001 05-31 - TO SH IBA 2SA1736 ELECTRICAL CHARACTERISTICS (Ta = 25 , O 0 0 U 1 1 Ul 1 TO SH IBA 2SA1736 ic - VRE SAFE OPERATING AREA SINGLE , VOLTAGE PC - Ta 4 2 001 05-31 - TO SH IBA 2SA1736 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1736 2SC4541 2SA1736 2SC4541
2006 - Not Available

Abstract: No abstract text available
Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier , failure rate, etc). 1 2006-11-09 2SA1736 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1736 IC ­ VCE -4 Common , IC (mA) Collector current IC (mA) 3 2006-11-09 2SA1736 IC ­ VBE -3.0 Common , 2006-11-09 2SA1736 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to


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PDF 2SA1736 2SC4541 SC-62
2SA1736

Abstract: 2SC4541
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1736 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 2SA1736 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX -j-0.4 + 0.05 Low Saturation Voltage: V q ^ (sat)= -0.5V (Max.) (Iq = -1.5A) High Speed Switching , change w ith o u t notice. 0 0 1997 04-10 1/4 - TOSHIBA 2SA1736 ELECTRICAL , COLLECTOR-EMITTER SATURATION BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) O TO SHIBA 2SA1736 ic -


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PDF 2SA1736 2SC4541 40X50X0 250mm 2SA1736 2SC4541
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1736 2SA1736 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 4.6MAX. 1.7MAX. U nit in mm l.GM A X. 0.4+0.05 · · · · · Low Saturation Voltage: Vq e (sat)= -0.5V(Max.) (1^= -1.5A) High Speed Switching , TOSHIBA 2SA1736 ELECTRICAL CHARACTERISTICS Ta = 25°C) CHARACTERISTIC Collector Cut-off Current E , LTA G E V b e (sat! (V) O TOSHIBA 2SA1736 IC - V R E SAFE OPERATING AREA -1 0


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PDF 2SA1736 2SC4541 250mnTXÖ
smd marking LD

Abstract: ld smd transistor 2SA1736 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A 2SC4541 smd marking TF
Text: Transistors SMD Type Power Switching Applications 2SA1736 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta , Transistors SMD Type 2SA1736 Test Circuit Marking Marking LD Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SA1736 www.kexin.com.cn 3 Kexin


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PDF 2SA1736 2SC4541 -75mA -100mA smd marking LD ld smd transistor 2SA1736 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A 2SC4541 smd marking TF
Not Available

Abstract: No abstract text available
Text: 2SA1736 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm 1.7 MAX. 4.6MAX. 1.6 MAX. 0 .4 ± 0 05 Low Saturation Voltage : V c e (sat)=-0.5A(Max.) (IC=-1.5A) High Speed Switching: tstg=0-2^s (Typ.) Small Flat Package Pc=l~2W (Mounted on , 2SA1736 COLLECTOR POWER DISSIPATION © © t\3 Pc W) © ^ O ¿7» © 30 - © - t\5 , 00 s H i ? P3 / t I/ / y f/ 1/ Ta 1 2SA1736 I I COLLECTOR CURRENT I B AS E-ÜM


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PDF 2SA1736 2SC4541
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SA1736 2 S A 1 736 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER SW ITCHING APPLICATIONS 1 .6 M A X . , 1997 - 04-10 1/4 T O SH IB A 2SA1736 ELECTRICAL CHARACTERISTICS Ta = 25 , > 3 3 /4 2SA1736 1 9 9 7 -0 4 -1 0 i— * o o r f M o H O T O SH IB A 2SA1736 ic - SAFE OPERATING AREA vbe -10 < o H £ Ed tó O S D ü o Ta


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PDF 2SA1736 2SC4541 250mm2X0 250mm
2sb1355

Abstract: 2SB1516 2SB1493 2SA1842 2sb1261 2SB1332 2SB1329 2SB1328 2SA1770 2SB906
Text: 2SA1736 2SB1573 2SB 1573 fé T 2SB1202 2SB906 2SB1261 2SB1314 2SB1516 2SB 1574 fé T 2SB1201


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PDF 2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1516 2SB1493 2SA1842 2sb1261 2SB1332 2SB1329 2SB1328 2SA1770 2SB906
2002 - Not Available

Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1736 Features · · · · · · Low saturation voltage: VCE(sat) =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package PC=1~2W (Mounted on ceramic substrate) Complementary to 2SC4541 Marking code: LD PNP Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC IB PC PC* TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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PDF 2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0
2SB897

Abstract: 2SB1483 2SB348 2sb1497 2SB1453 2SA1692 2SB1370 2sb1355 2SA1776 2SB1469
Text: 2SA1020 2SB1446 2SB 1506 □ —A 2SB1124 2SA1736 2SB1572 2SB1519 2SB1440


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PDF 2SA1709 2SA1704 2SB1434 2SA1692 2SB1117 2SB1452 2SA1832 2SA1836 2SA1774 2SB881 2SB897 2SB1483 2SB348 2sb1497 2SB1453 2SA1692 2SB1370 2sb1355 2SA1776 2SB1469
SA1757

Abstract: 2SA1148 2SA1126 2SC456 2SA1747 2SA1140 2SA1138 2SA1755 2SA1763 2sc4612
Text: c _n i; -0. 025 2SA1736 m. PA PSW -60 -50 -3 0.5 1 -0. 1 -60 120 400 -l -0.1 -0.5 -1.2 -1. 5 , * 0. 2* 32* 2SC4541 SC—62 ECB 2SA1736 200 -5 -0.01 4 Ce-rb'b max 25ps f=31. 9MHz SCâ


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PDF 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 SA1730 2SA1731 SC-70) 2SA1748 2SC4564 SA1757 2SA1148 2SA1126 2SC456 2SA1747 2SA1140 2SA1138 2SA1755 2SA1763 2sc4612
2SA1163

Abstract: 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
Text: - 76 - Ü s Type No. a « Manuf. H # SANYO S S TOSHIBA B 8 NEC 0 iL HITACHI « ± a FUJITSU fô T MATSUSHITA H S MITSUBISHI □ — A ROHM 2 SB 1578 a m 2SB1575 2S6 1579 fâ T 2SA1825 2 SB 1580 □ -A 2SB1576 2 SB 1581 s m 2SA1896 2SA1736 2SB1574 2SB 1582 fë T 2SA1T53 2SAU82 2SA1121 2SA1366 2SB 1583 fò T 2SA1257 2SA1163 2SA1468 2SB 1584 fò T 2SA1753 2SA1182 2SB831 2SA1355 2SB 1585 fô T 2SA1753 2SA1182 2SB831 2SA1365 2SB 1586 yyry 2SB1555 2SB1400


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PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
2SA1301 TOSHIBA

Abstract: b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1213 2SB897 2SB798 2sb754
Text: 2sb1439 2sb 1517 □ —a 2sa1707 2sa1761 2sb1433 2sb1543 2sb 1518 0 4 2sb1121 2sa1736 2sb1572


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PDF 2sb827 2sb754 2sa1185 2sb828 2sb1154 2sb829 2sbi155 2sb1214 2sb1418 2sb904 2SA1301 TOSHIBA b962 2SA1301 2SB1482 2SB1487 Toshiba 2SB754 2SA1213 2SB897 2SB798 2sb754
Not Available

Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SA1736 Features · · · · · · Low saturation voltage: VCE(sat) =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package PC=1~2W (Mounted on ceramic substrate) Complementary to 2SC4541 Marking code: LD PNP Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC IB PC PC* TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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PDF 2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
Text: ¥ 2SA1736 2SB1440 2SA1797 2SB 1124 , Â¥ 2SA1213 2SB1572 2SB1446 2SB 1127, Â¥ 2SA1357 2SBU51


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
smd marking KD

Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
Text: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current IC


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PDF 2SC4541 2SA1736 100mA smd marking KD kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
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