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2SA1586SU-Y,LF Toshiba America Electronic Components X34 PB-F SOT-323 TRANSISTOR(LF), PD=100MW, F=80MHZ
2SA1586SU-GR,LF Toshiba America Electronic Components X34 PB-F SOT-323 TRANSISTOR(LF), PD=100MW, F=80MHZ
2SA1586-GR,LF Toshiba America Electronic Components TRANS PNP 50V 0.15A USM
2SA1586-Y,LF Toshiba America Electronic Components TRANS PNP 50V 0.15A USM

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2SA1586 T5LSONY Toshiba America Electronic Components Chip One Exchange - -
2SA1586-GR,LF Toshiba America Electronic Components Chip1Stop 645 $0.07 $0.05
2SA1586-GR,LF Toshiba America Electronic Components Avnet 0 $0.02 $0.02
2SA1586-GR,LF Toshiba Corporation Bristol Electronics 3,000 $0.11 $0.03
2SA1586-GR,LF(T Toshiba America Electronic Components Chip1Stop 3,000 $0.20 $0.17
2SA1586-GR(TE85L,F) Toshiba America Electronic Components Chip1Stop 6,500 $0.20 $0.17
2SA1586-Y Toshiba America Electronic Components New Advantage Corporation - -
2SA1586-Y,LF Toshiba America Electronic Components Chip1Stop 3,000 $0.19 $0.07
2SA1586-Y,LF Toshiba America Electronic Components Avnet 0 $0.02 $0.02
2SA1586-Y,LF(T Toshiba America Electronic Components Chip1Stop 2,400 $0.20 $0.17
2SA1586-Y(F) Toshiba America Electronic Components RS Components 9,700 £0.20 £0.03
2SA1586-Y(T5L,F,T) Toshiba America Electronic Components America II Electronics - -
2SA1586-Y(TE85L,F) Toshiba America Electronic Components Chip1Stop 6,800 $0.20 $0.17
2SA1586-Y(TE85L,F) Toshiba America Electronic Components America II Electronics - -
2SA1586SU-GR,LF(D) Toshiba America Electronic Components America II Electronics - -
2SA1586SU-Y,LF(D) Toshiba America Electronic Components America II Electronics - -

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2SA1586 datasheet (35)

Part Manufacturer Description Type PDF
2SA1586 Kexin Silicon PNP Epitaxial Original PDF
2SA1586 Toshiba Japanese - Transistors Original PDF
2SA1586 TY Semiconductor Silicon PNP Epitaxial - SOT-323 Original PDF
2SA1586 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1586 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1586 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1586 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1586 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1586 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1586 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
2SA1586 Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
2SA1586 Toshiba PNP transistor Scan PDF
2SA1586-GR Toshiba 2SA1586 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1586GR Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
2SA1586-GR,LF Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN PNP -50V -0.15A USM Original PDF
2SA1586-GRT5LFT Toshiba 2SA1586 - Trans GP BJT PNP 50V 0.15A 3-Pin USM T/R Original PDF
2SA1586-GR(T5LSUMF Toshiba 2SA1586 - Trans GP BJT PNP 50V 0.15A 3-Pin USM T/R Original PDF
2SA1586GRTE85L Toshiba 2SA1586 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
2SA1586-GR(TE85L,F Toshiba 2SA1586 - Trans GP BJT PNP 50V 0.15A 3-Pin USM T/R Original PDF
2SA1586GRTE85R Toshiba 2SA1586 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

2SA1586 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1598

Abstract:
Text: 2SA1622 2SA1586 2SA1611 2SB1218A 2SA1603 2SA 1 577 / □ —A 2SA1745 2SA1588 2SA1608 2SA1532 2SA , 2SB1181 2SA 1593 , H 2SB905 2SB768 2SB928 2SA 1594 □ —A 2SA1622 2SA1586 2SA1611 2SB1218A 2 , H * 2SA1622 2SA1586 2SB1219A 2SA1576 2SA 1603 H m 2SA1622 2SA1586 2SA1611 2SB1219A 2SA1576 , 1611 B s 2SA1622 2SA1586 2SB1218A 2SA1603 2SA1576 2SA 1612 a a 2SA1587 2SB1220 2SA1579 2SA


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PDF 2SA1483 2SA1622 2SA1586 2SA1611 2SB1218A 2SA1603 2SA1745 2SA1588 2SA1608 2SA1532 2SA1598 2sa1612 2SB1220A 2SA1763 2SA1611 2sa1578 DTA124TK
2SA1586

Abstract:
Text: Amplification D F G CLASSIFICATION OF hFE Product-Rank 2SA1586-O 2SA1586-Y Range 70~140 120~240 200~400 Marking SO SY REF. 2SA1586-GR (G) SG A B C D E F , 2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current Complementary to 2SC4116 Small Package A L


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PDF 2SA1586 OT-323 2SC4116 2SA1586-O 2SA1586-Y 2SA1586-GR 25-Jan-2011 -100A, -100mA, 2SA1586 2SA1586GR 2SA1586-Y 2SA1586O 2SC4116
2007 - 2SA1586

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications · · · · · · Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4116 Small , 2SA1586 2 2007-11-01 2SA1586 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The


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PDF 2SA1586 2SC4116 2SA1586 2SC4116
2SA1586

Abstract:
Text: 2SA1586 PNP (PCT) 2SA1586 : mm · · : IC = -150 mA () : VCEO = -50 V · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · , () °C : : (//) ( / ) () () 1 2007-11-01 2SA1586 (Ta = 25 , 2007-11-01 2SA1586 IC ­ VCE IB ­ VBE -1000 -240 -500 -2.0 -1.5 VCE = -6 V (A , 140 (°C) 2007-11-01 2SA1586 20070701-JA · · " " · ·


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PDF 2SA1586 2SC4116 20070701-JA 2SA1586 2SC4116
2SA1622

Abstract:
Text: 2SB1218A 2SB1198K 2SA 1621 - S 2 2SB1295 2SB798 2SB970 2SB1197K 2SA 1622 ' H # 2SA1586 2SA1532 2SA1603 2SA1586 2SA 1623 = RN2210 UN4116 2SA 1624 - H 2SA1320 2SA1544 2SB1221 2SA 1 625 - 0 % 2SA1699 2SA1018 2SA1760 2SA 1626 S « 2SA1786 2SA 1628 a Sz 2SA1622 2SA1586 2 SA1611 2SA1532 2SA1603 2SA1576 2SA 1629 a Sz 2SA1622 2SA1586 2 SA1611 2SA1532 2SA1576 2SA 1 630 , = Â


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PDF 2SA1772 2SA1641 2SB936 RN2206 UN4116 2SA1781 2SA1162 2SA812 2SA1022 2SA1622 2SA1699 2sa1015 2SA1586 2s8817 2SA1638 2SA1782 2SA1018 2sa1175
2SA1586

Abstract:
Text: 2SA1586 PNP (PCT) 2SA1586 : mm · · : IC = -150 mA () : VCEO = -50 V · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · , : g () °C : (//) ( / ) () () 1 2007-11-01 2SA1586 (Ta = 25 , 2007-11-01 2SA1586 IC ­ VCE IB ­ VBE -1000 -240 -500 -2.0 -1.5 VCE = -6 V (A , 140 (°C) 2007-11-01 2SA1586 · · · · ""


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PDF 2SA1586 2SC4116 2SA1586 2SC4116
2SA1586

Abstract:
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1586 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1586 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 2.1 ± 0.1 1.25 ±0.1 " ·-H oo · · · · · · High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hFE dC = -0.1m A) / hFE (Ic = -2m A) = 0.95 (Typ.) High hEE : hEE = 70-400 Low Noise : NF = ldB , hEE Rank 1 2001 05-31 - NJ TO SH IBA 2SA1586 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1586 150mA 2SC4116 125transportation 2SA1586 A1586
2003 - 2SA1586

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) · High hFE: hFE = 70~400 · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to , ) marking symbol Marking 1 2003-03-27 2SA1586 2 2003-03-27 2SA1586 RESTRICTIONS ON


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PDF 2SA1586 2SC4116 2SA1586 2SC4116
JE 1692

Abstract:
Text: - 38 - S! « Type No. tt « Manuf. SANYO K: 2 TOSHIBA s a NEC B tL HITACHI * ± a FUJITSU «5 T MATSUSHITA - m MITSUBISHI □ — A ROHM 2SA 1681 2SB1229 2SB1410 2SA 1683 . = » 2SA720A 2SA 1684 - a a 2SA1606 2SA1304 2SB1096 2SB928 2SB1186 2SA 1685 - 2SA1586 2SA1613 2SB1218A 2SA 1686 □ —A 2SA1015 2SAU75 2SB1376 2SB1314 2SA 1687 ¥ 2SA1586 2SB1218A 2SA1602 2SA 1688 — 2SA1532 2SA1602 2SA1808 2SA 1689 - .E. ¥ 2SA1091 2SB1209 2SA 1690


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PDF 2SB1229 2SB1410 2SA720A 2SA1606 2SA1304 2SB1096 2SB928 2SB1186 2SA1586 2SA1613 JE 1692 2SB811 2SB1443 2SB1242 2SA1323 2SB1434 2SB1376 2SA1286 2SA1283
Not Available

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC4116 â , commercial production 1987-01 1 2014-03-01 2SA1586 2 2014-03-01 2SA1586 RESTRICTIONS ON


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PDF 2SA1586 2SC4116
2009 - 2SA1586

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) · High hFE: hFE = 70~400 · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to 2SC4116 · Small package , 2SA1586 2 2007-11-01 2SA1586 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its


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PDF 2SA1586 2SC4116 10lled 2SA1586 2SC4116
2003 - 2SA1586

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ , ~240, GR (G): 200~400 ) marking symbol Marking 1 2003-03-27 2SA1586 2 2003-03-27 2SA1586 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SA1586 2SC4116 2SA1586 2SC4116
2SA158

Abstract:
Text: TOSHIBA TO S H IB A TRANSISTOR A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1586 2SA1586 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 2.1 ± 0.1 · · · · · · High Voltage and High current : V c e O = - 50V, IC =-150m A (M ax.) Excellent hpE Linearity : hpE (IC = -0.1mA) / hpE (IC = -2mA) = 0.95 (Typ.) High hpE : hpE = 70~400 Low Noise : NF = ldB (Typ , Electronic-Library Service CopyRight 2003 TOSHIBA 2SA1586 IC - V cE Iß - Vb e hFE - IC


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PDF 2SA1586 -150m 2SC4116 961001EAA2' 2SA158 2SA1586 A1586 marking IAY
Not Available

Abstract:
Text: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC4116 â , 2SA1586 2 2007-11-01 2SA1586 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its


Original
PDF 2SA1586 2SC4116
SS2205

Abstract:
Text: 2SA1162 2SA812 2SA1122 2SC2778 2SA1037K 2SA 1531_- fé t 2SA1688 2SA1586 2SA1628 2SA1603 2SA1576 2SA 1531» fé T 2SA1688 2SA1586 2SA1603 2SA1579 2SA 1532 fé T 2SA1688 2SA1586 2SA1603


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PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SB1043 2SA1586 2SA1284 2SA1283 2SA1178
Not Available

Abstract:
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1586 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. · · · High Voltage and High current 2SA1586 U nit in mm 2.1 ± 0.1 : Vc e o = -50V, I C = -150mA(Max.) Excellent hpE Linearity 3- r oo + I : hpE (Ic = -0.1m A )/hpE (Ic = -2mA) = 0.95 (Typ.) High hFE : hpE = 7 0 -4 0 0 2 Low Noise ; NF = , . 1997-04-10 1/2 TOSHIBA 2SA1586 IC - VCE ib - v b e C O LLE CTOR-E M ITT E R V


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PDF 2SA1586 --50V, --150mA 2SC4116 961001E
2SA1178

Abstract:
Text: - 66 - m « Type No. tt S Manuf. H m SANYO Ä S TOSHIBA B m HEC B ïr HITACHI « ± a FUJITSU Íí} T MATSUSHITA H m MITSUBISHI □ - A ROHM 2 SB 1216 H m 2SA1647 2SB930A 2 SB 1217 a m 2SB986 2SA1359 2SA1096 2SB1065 2SB 1218 85 T 2SA1622 2SA1586 2SA1628 2SB1218A 2SA1603 2SA1576 2SB 1218A fö t 2SA1586 2SA1603 2SA1576 2SB 1219 ^ ts T 2SA1745 2SA1588 2SA1577 2SB 1219A fö T 2SA1588 2SA1577 2SB 1220 ta t 2SA1587 ¿ortl57¡i 2SB 1221 ta t 2SA1371


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PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2SA1178 2S897 2SA1225 2SA1243 2SA1586 2SA1628 2SA1371 2SA879 2SA1770 2SA1283
2SA1586

Abstract:
Text: TOSHIBA TO SHIBA TRANSISTOR A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1586 2SA1586 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 2.1 ± 0.1 1.25 ± 0 .1 3 oo + I · · · · · · High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hpE dC = -0.1mA) / hFE (Ic = -2m A) = 0.95 (Typ.) High hEE : hEE = 70~400 Low Noise : NF = ldB , lia b ility H a n d b o o k . 1997 04-10 - 1/2 TOSHIBA 2SA1586 IC - VCE Iß -


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PDF 2SA1586 150mA 2SC4116 2SA1586 A1586 marking IAY transistor marking bh ra
2SC5471

Abstract:
Text: 2SA1586 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC4118 , General-purpose 3 2SC4738 General-purpose 3 2SA1955 High current 3 2SC5376 High current 3 2SA1586


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PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Not Available

Abstract:
Text: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • U nit in mm High Voltage and High current : V C E 0 = —50V, I C = - 1 5 0 m A (Max.) 2.1 ±0.1 1.2 5 ± 0.1 . "1 • • High hpE • Low Noise : N F = ldB (Typ.), lOdB (Max.) • Complementary to 2SC4116 â , TOSHIBA Semiconductor Reliability Handbook. 1997 - 04-10 1/2 TOSHIBA 2SA1586 Iß - V b e


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PDF 2SA1586 2SC4116 961001EAA2'
Not Available

Abstract:
Text: 2SA1586 · SILICON PN P EPITAXIAL T Y P E TRANSISTO R AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm 1 25 High Voltage and High current : Vc e o = -50V, IC = -150mA (Max.) Excellent hpE Linearity : hjTE d c = -0.1mA)/hjrj; (Iq = -2mA) = 0.95 (Typ.) High hpE . hyg = 70~400 Low Noise : NF= ldB (Typ.), lOdB (Max.) Complementary to 2SC4116 Small Package CHARACTERISTIC , ^ Type Name hpE Rank 190 2SA1586 Ic - Vc e (mA) Iß - Vb E -500 -300 v CE - 6v -1 0 0


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PDF 2SA1586 --50V, --150mA 2SC4116
3SK275

Abstract:
Text: 125 125 125 125 125 125 125 125 125 125 125 Mark Comple mentary 2SC4116 2SA1586 2SC4117 2SA1587 - , 2SA1586 2SC4116 2SA1587 2SC4117 2SC4215 2SA15B8 2SC4118 2SC4244 2SC4245 2SC4246 2SC4247 2SC4248 2SC4249


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PDF 2SC4116 2SA1586 2SC4117 2SA1587 2SA1015 2SC1815 2SA970 2SC2240 2SC1923 2SA562TM 3SK275 2sk882 C439-4 FR90 transistor TT fet
2SC4174

Abstract:
Text: -2 -0.1 2SA1586 LF LN A -50 -50 -0. 15 0.1 -0. 1 -50 70 400 -6 -0. 002 -0.3 -0.1 -0.01 2SA1587 , =10K 2SC4116 (SC-Î0(2-2E1A) BEC 2SA1586 100* -6 -0.001 4* NF max lOdB f=lKHz Rg=10K 2SC4117 (SC


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PDF 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SC4154 2SA1602 2SC4155 2SA1603 2SC4174 2SAI611 2SA1572 2SA1580 2SA1579 2SA1577 2SA1576 2SA1575 2SA1574 LF SC-70
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1586 TRANSISTOR (PNP) FEATURES SOT–323  High DC Current Gain  High Voltage and High Current.  Complementary to 2SC4116  Small Package APPLICATIONS  General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. COLLECTOR Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter


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PDF OT-323 2SA1586 2SC4116 -100mA, -10mA
2SC4116

Abstract:
Text: 2SC4116 NPN (PCT) 2SC4116 AM · : mm : VCEO = 50 V · : IC = 150 mA () · : hFE = 70~700 · hFE : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 () · · 2SA1586 : NF = 1dB (), 10dB () (Ta = 25°C) VCBO 60 V VCEO 50 V JEDEC VEBO 5 V JEITA SC-70 IC 150 mA 2-2E1A IB 30 mA PC 100 mW


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PDF 2SC4116 2SA1586 SC-70 2SC4116 2SA1586
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