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2SA1318S-AA ON Semiconductor Rochester Electronics - -
2SA1318T ON Semiconductor Rochester Electronics 14,500 $0.09 $0.07
2SA1318T-AA ON Semiconductor Rochester Electronics - -

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2SA1318 datasheet (22)

Part Manufacturer Description Type PDF
2SA1318 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1318 Various Russian Datasheets Transistor Original PDF
2SA1318 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1318 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1318 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1318 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1318 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1318 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1318 Others Cross Reference Datasheet Scan PDF
2SA1318 Others Silicon PNP Transistor Scan PDF
2SA1318 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
2SA1318 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF
2sa1318 Sanyo Semiconductor PNP Silicon Transistor for AF amplifier applications Scan PDF
2SA1318 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
2SA1318R Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1318R Sanyo Semiconductor PNP transistor for AF amplifies applications, 60V, 0.2A Scan PDF
2SA1318S Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1318S Sanyo Semiconductor PNP transistor for AF amplifies applications, 60V, 0.2A Scan PDF
2SA1318T Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1318T Sanyo Semiconductor PNP transistor for AF amplifies applications, 60V, 0.2A Scan PDF

2SA1318 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1318

Abstract:
Text: 2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G APPLICATIONS H Capable of Being Used in The Low Frequency to High Frequency Range Emitter Collector Base J A D CLASSIFICATION OF hFE(1) Product-Rank 2SA1318-R 2SA1318-S 2SA1318-T 2SA1318-U 100~200 Range 140~280 REF. B 200~400 A B C D E F G


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PDF 2SA1318 2SA1318-R 2SA1318-S 2SA1318-T 2SA1318-U 19-Jan-2011 -10mA 2SA1318 TRANSISTOR 2sa1318 2SA1318 transistor 2SA1318T
u560100

Abstract:
Text: Ordering number: EN 1600A N0.I6OOA iiilt 2SA1318 /2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Use . Capable of being used in the low frequency to high fMquegfjf Features ♦ Large current capacity and vide ASO. ( ); 2SA1318 Absolute Haximm Ratings at Ta , min hr*i vCr¥ 800 (560) Ok*. • The 2SA1318 /2SC3331 tìt|psifie(J by 1mA 2SA1318 typ , 3197KI/D054MW,TS No.1600-1/3 2SA1318 /2SC3331 Continued fron preceding page« min typ max unit


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PDF 2SA1318/2SC3331 2SA1318 u560100 2sc3331 transistor 2SC3331 2sa131
u560100

Abstract:
Text: Ordering number: EN 1600A I i S A i YO N0.I6OOA 2SA1318 /2SC3331 PNP/ NPN Epitaxial , high frequency range. Features . Large current capacity and wide ASO. ( ): 2SA1318 Absolute Kaxiaua , page. * The 2SA1318 /2SC3331 are classified by 1mA hpE as follows: 2SA1318 2SC3331 100 R 200 140 S 280 , 463 2SA1318 /2SC3331 Continued from preceding page. Collector to Emitter Saturation Voltage Base to , Manufacturer 2SA1318 /2SC3331 1000 fT " IC fT - IC -1.0 -4 -3 -5 -7 -10 -2 "3 -5 -Collector Current,IC cob


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PDF 2SA1318/2SC3331 2SA1318 SC-43 u560100 2SC3331 2sc3331 transistor 3331-J TRANSISTOR 2sa1318
x0606

Abstract:
Text: SAIÊYO . 'No. 1 1> o 0 a / 3060 «^UH*:^*' Nal600 2SÂ1318 /2SC3331 «f J* * «ôSÏFa^S < OWii 2SA1318 OJJJSft&ic-i-, PNP/NPNXt'í' + y JftWílASitft Absolut:.« Maximum Rat inqi>/Ta^r> °C un i X 31/79 'l-iMSÎ. V CBÜ c/|4o V /.-"' m lì V CEO /ï/ho V V EÖÜ //^Àà v , » 1600-1/3 2SA1318 /2SC3331 IC - VcE IC - VCE -10 -20 -30 _ -AO -50 3 1/ ? Í • X ï 7 ~ V le - VBE , -2/3 2SA1318 /2SC3331 cob - Vçg fe I fii o O * W ■Rt 93 2 — j ?SA ;3i m B z 7 â


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PDF Nal600 1318/2SC3331 2SA1318 2KA13tà 2SC3331 x0606 A1318 2SC3331 A1318 U P370-05 3060f A3060 C100
2sc3331 transistor

Abstract:
Text: Ordering number: EN 1600A N0.I6OOA 2SA1318 /2SC3331 i SA\YO PNP/ NPN Epitaxial Planar , frequency range. Features . Large current capacity and wide ASO. ( ): 2SA1318 Absolute Kaxiaua Ratings at , 2SA1318 /2SC3331 are classified by 1mA hpE as follows: 2SA1318 100 K 200 140 S 280 200 T 400 280 Ü 560 , 2SA1318 /2SC3331 Continued from preceding page. Collector to Emitter Saturation Voltage Base to Emitter , Collector Current,Ic - mA 464 7cn707b DDlSTEl 376 2SA1318 /2SC3331 1000 fT " IC fT - IC -1.0 -1 "3 "5


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PDF 2SA1318/2SC3331 2SA1318 2034/2034A SC-43 7tlt17D7b 2sc3331 transistor 2SC3331 PJ 431
2SA999

Abstract:
Text: = £ 2SA1318 2SA1015 2SA733 2SA844 2SA933 2SA 1027 •. B 2SA1318 2SA1015 2SA991 2SA836


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PDF 2SA1011 2SB940A 2SB1085B 1006B 2SA1306B 2SB817 2SA1011 2SB940 2SB1085 2SB921 2SA999 2SA1015 2sa733 2SA1038 2SA1026 2SA921 2SA933 2sa 1023 2SA1309A 2SA1318
2SA1318

Abstract:
Text: 2SA1318 2SA1318 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA, IE


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PDF 2SA1318 -100mA, -10mA 2SA1318
2001 - 2SC3331

Abstract:
Text: Ordering number : EN 1600A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1318 /2SC3331 AF Amp Applications SANYO Electric


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PDF 2SA1318/2SC3331 2SC3331 2Sa1318
RA101Q

Abstract:
Text: Ordering number: EN5335A No.5335A Notification of the Discontinuation of Discrete Devices (Affected Products : Products listed below) Thank you for your continued use of Sanyo products. This notice announces the discontinuation of Sanyo semiconductor products. Please make a note of this discontinuation. Memorandum To discontinue production. Features Package Discontinued Products Discontinuation Date Small-signal general-purpose transistors SPA NP 2SA608SPA 2SA1317 2SA1782 2SC536SPA 2SC3330 2SC4640 2SA1318


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PDF EN5335A 2SA608SPA 2SA1317 2SA1782 2SC536SPA 2SC3330 2SC4640 2SA1318 2SA608NP 2SA1783 RA101Q 117Q zener japan do-35 2SD1649 2SC3331 "Zener Diodes" sanyo
Not Available

Abstract:
Text: 2SA1318 Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.560 @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)6.0 V(CE)sat Max. (V)300m @I(C) (A) (Test Condition


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PDF 2SA1318 Freq200M
2004 - 2SA1318

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1318 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 2SA1318 -100mA, -10mA 2SA1318
2010 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1318 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Large Current Capacity and Wide ASO 3. BASE APPLICATIONS Capable of Being Used in The Low Frequency to High Frequency Range MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base


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PDF 2SA1318 Te-50 -100mA -10mA
2SA1318

Abstract:
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1318 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 2SA1318 -100mA, -10mA 2SA1318
equivalent transistor 8550

Abstract:
Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor (To-92 Plastic Package) JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550 2SA987 HN / BC 557 / 9015 2SA1323 HN / BC 558 / 9015 2SA855 HN / BC 556 / 9015 2SA989 HN / BC 556 / 9015 2SA1334 HN / BC 327 / 8550 2SA866 HN / BC 558 / 9015 2SA993


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PDF To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
2SC3368

Abstract:
Text: 3* 2SA1317 (SPA) ECB 2SC3330 200* 6 0.01 3* 2SA1318 TO-92JB ECB 2SC3331 120* 10 0.05


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PDF 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 00MHz 2SC3354 O-92JÃ 2SC3368 2SC3356 to 92 2SC3356 2SC3371 2SC3358 2sc3325 cross 2SC3369 2SA1317 2SC3326
T84A

Abstract:
Text: 180 22k 1k 2SA1318 2SC3331 5 RF SW IN 10k 2k R/P 4 REC AMP 18k 3 , 38 PB_Y 1/2 330 96 REC FM-AGC1 FM AGC 3.3k 5.1k 22k 2SA1318 + LINE , PB:EP 22k 2SA1318 T42 ALWAYS 40 5V 1/2 1k 0.1 3 REC FM-EQ P Vref


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PDF LA71170M SANYOQIP100EJ 12000MH B8-4445 SW71A SW60A SW62A T84A t46a FBC 40A SW82A LA7117 SW62a T71A LC89982 SW60A
2SA1379

Abstract:
Text: 300 150 300 -6 -1 2SA1318 -60 -6 -200 600 150 300 -6 -1 2SA1319 -180 -6 -700 700 150


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PDF 2SA1301 2SA1302 2SA1303 2SA1304 2SA1305 2SA1306 2SA1307 2SA1308 2SA1309 2SA1310 2SA1379 2sa1333 2SA1372 2SA1354 2SA1335 2SA1397 2sa1309 2SA1349 2SA1334 2SA1326
2SA1348

Abstract:
Text: * -6 -0.01 4.5* 2SC3331 T0-92ÏÏ5 ECB 2SA1318 120* -10 -0.05 0.06* 0.06* 0.9* 11* 2SC3332


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PDF 2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1348 2SA1317 2SC3426 2SA1323 2SA1321 2SA1320 2SA1319
PBY 36

Abstract:
Text: AE R/P 2SC3331 2SC3331 560 0.022F 1k 1k 47 0.01F 1k 2SA1318


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PDF LA71011M LA71011MVHS QIP64E 11498TH B8-3077 390pF 200pF LC89962 LA70010 PBY 36 T26G A790 BGP1 vop38 IC cs 4852 FBC 320 la-7101 LA71011M pbl 370
2003 - 2SC1815 NPN SOT-23

Abstract:
Text: Transistors Part No. and Polarity NPN 2N4123 2N4124 2SA608 2SA836 2SA1318 2SC1317 2SD1513 KTC3199 2SA1235A


Original
PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 2N2907 SOT-23 BC337 S8050 npn BC212C BC347 ztx4 BC546B SOT23 BC547C NPN transistors frequency
t65a

Abstract:
Text: 10µF 150 12k 33µF 2SA1318 R/P No.7950-12/30 LA71206M No. 1 AUDIO DC


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PDF LA71206M LA71206M D1306 B8-6460 t65a t57b CCD linear 22pin SW65a T74A LA71206 SW18A SW72A T10A T31DC
2SC331

Abstract:
Text: 86 FM AGC2 DOUBLE F-TEST WHEN SQPB LIM EQ THROUGH P 61 1.2k 2SC3331 2SA1318


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PDF N7951A LA71730EM LA71730EMVHSVCRSECAMPAL-G 43NTSCMESECAM B8-6706 VSW11 VSW23 2SC331 bit 3252a fet canal p CAR ALTERNATOR data sheet pd t25-45 2SC331 equivalent t87a pby 286 LA71730EM MT78A
la71205

Abstract:
Text: 1µF 1.5k 4.7k 200pF 0.1µF 390pF 1µF 2200pF 10µF 150 12k 33µF 2SA1318


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PDF LA71205M LA71205M N2206 B8-6055, B8-5985 A0219-1/30 A0219-29/30 A0219-30/30 la71205 T67A T32A -20 SW65a T58A T57B SW67A t65a sw49
T67A

Abstract:
Text: 10µF 150 12k 33µF 2SA1318 R/P No.7949-12/30 LA71207M No. 1 AUDIO DC


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PDF LA71207M LA71207M D1306 B8-6340 T67A SW18A t65a T72a SW65a T57B LA71207 t19l SW0SC T74A
2SB1406

Abstract:
Text: 476 2SC4640 476 2SA1318 2SC3331 463 NP 2033 2033 2003A 463 NP 2003A


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PDF 2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715
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