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2SA1300 datasheet (20)

Part Manufacturer Description Type PDF
2SA1300 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1300 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
2SA1300 Various Russian Datasheets Transistor Original PDF
2SA1300 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1300 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1300 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1300 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1300 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1300 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1300 Others Cross Reference Datasheet Scan PDF
2SA1300 Toshiba PNP transistor Scan PDF
2SA1300 Toshiba TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Scan PDF
2SA1300 Toshiba TO-92 Transistors Scan PDF
2SA1300 Toshiba TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
2SA1300-BL Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1300BL Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
2SA1300-G Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1300GR Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
2SA1300-Y Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1300Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

2SA1300 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1300

Abstract: 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR
Text: Current gain and excellent hFE linearity Low Saturation Voltage G 2SA1300-Y 140~280 Range Emitter Collector Base J CLASSIFICATION OF hFE(1) Product-Rank H A 2SA1300-GR D 2SA1300-BL 200~400 REF. B 300~600 A B C D E F G H J K K E C F , 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS , informed individually. Page 1 of 2 2SA1300 Elektronische Bauelemente -2 A, -20 V PNP Plastic


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PDF 2SA1300 2SA1300-Y 2SA1300-GR 2SA1300-BL 19-Jan-2011 -10mA, 30MHz 2SA1300 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR
2004 - 2SA1300

Abstract: QW-R208-012
Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC , 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR RANGE 140-280 200-400 300-600 - continued CHARACTERITICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-012,A UTC 2SA1300 PNP EPITAXIAL


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PDF 2SA1300 -50mA) OT-89 QW-R208-012 2SA1300
2SA1300

Abstract: No abstract text available
Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum , 2SA1300 2 2003-03-24 2SA1300 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SA1300 2SA1300
2SA1300

Abstract: 25F1B
Text: 2SA1300 PNP (PCT) 2SA1300 · : mm hFE : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (), 120 () (VCE = -1 V, IC = -4 A) · : VCE (sat) = -0.5 V () (IC = -2 A, IB = -50 mA) (Ta = 25°C) -20 VCEO -10 VEBO -6 IC -2 ICP -5 IB -0.2 A PC 750 mW DC ( 1) VCES , ~600 1 2007-11-01 2SA1300 2 2007-11-01 2SA1300 · · ·


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PDF 2SA1300 SC-43 2SA1300 25F1B
2SA1300

Abstract: No abstract text available
Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , , Stock Code: 724) R Dated : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min , ) R Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30 -4 -3 COMMON EMITTER Ta


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PDF 2SA1300 2SA1300
TO92 LOW VCE PNP

Abstract: No abstract text available
Text: 2SA1300 (PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , Capacitance Cob pF CLASSIFICATION OF Rank Range hFE Y 140-280 GR 200-400 BL 300-600 2SA1300


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PDF 2SA1300 -10mA -100mA 30MHz TO92 LOW VCE PNP
2009 - 2SA1300

Abstract: No abstract text available
Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = , : hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600 1 2007-11-01 2SA1300 2 2007-11-01 2SA1300 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and


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PDF 2SA1300 2SA1300
2SA1300

Abstract: No abstract text available
Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Y , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SA1300 I C - VBE -100


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PDF 2SA1300 2SA1300
2006 - 2SA1300

Abstract: 2sA1300 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current gain and excellent hFE linearity Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3. BASE Value Units VCBO Collector-Base Voltage -20 V VCEO , Characteristics 2SA1300 Jiangsu Changjiang Electronics Technology


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PDF 2SA1300 -10mA -100mA 30MHz 2SA1300 2sA1300 transistor
A1300 transistor

Abstract: A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y br A1300 transistor SA1300 2SA1300
Text: TOSHIBA T O SH IB A T R A N SISTO R 2SA1300 ST R O BO FLASH A PP LIC A TIO N S 2SA1300 SILICO N PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 M A X . M E D IU M P O W ER A M P LIF IER A PP LIC A T IO N S High DC Current Gain and Excellent hpE Linearity : hF E m = 140-600 (Vc e = , h a n g e w it h o u t notice. such T O 2000 - 11-28 1/3 TOSHIBA 2SA1300 , O O < O r H > o o < o < 2SA1300


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PDF 2SA1300 A1300 transistor A1300 GR A1300 transistor A1300 br A1300 GR br A1300 A1300 y br A1300 transistor SA1300 2SA1300
2007 - 2SA1300

Abstract: No abstract text available
Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Absolute , 2007-11-01 2SA1300 2 2007-11-01 2SA1300 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL


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PDF 2SA1300 2SA1300
2003 - 2SA1300

Abstract: No abstract text available
Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) · Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum , 2003-03-24 2SA1300 2 2003-03-24 2SA1300 RESTRICTIONS ON PRODUCT USE 000707EAA ·


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PDF 2SA1300 2SA1300
2002 - Not Available

Abstract: No abstract text available
Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC , CO. LTD V V MHz pF 1 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR


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PDF 2SA1300 -50mA) -50mA QW-R201-045
2SA1300

Abstract: No abstract text available
Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Y , Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30


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PDF 2SA1300 2SA1300
2SA1300

Abstract: No abstract text available
Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO , Code: 724) Dated : 07/12/2002 ST 2SA1300 Characteristics at Tamb=25 OC Symbol Min. Typ , Code: 724) Dated : 07/12/2002 ST 2SA1300 I C - VBE -100 -50 -30 -4 -3 COMMON EMITTER


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PDF 2SA1300 2SA1300
2014 - Not Available

Abstract: No abstract text available
Text: = -2A,IE= -50mA)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K Note: Pin , UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL , TECHNOLOGIES CO., LTD 2SA1300  PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA , Co., LTD GR 200-400 BL 300-600 2 of 3 QW-R208-012.C 2SA1300 PNP EPITAXIAL SILICON


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PDF 2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012
2004 - 2SA1300

Abstract: 2sA1300 transistor transistor 2A pnp
Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and , CO. LTD V V MHz pF 1 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR CHARACTERITICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-045,A UTC 2SA1300 PNP EPITAXIAL


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PDF 2SA1300 -50mA) QW-R201-045 2SA1300 2sA1300 transistor transistor 2A pnp
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 2. COLLECTOR Value Units 3. BASE VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base , GR BL 140-280 200-400 300-600 Typical Characteristics 2SA1300 Jiangsu


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PDF 2SA1300 -10mA -100mA 30MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1300 STROBO FLASH APPLICATIONS 2SA1300 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm .5.1 M AX. M EDIUM PO W ER AM PLIFIER APPLICATIONS · High DC C urrent Gain and Excellent h p g Linearity : hpE (i) = 140-600 (V ç e = -IV, I ç = -0.5A) · : hFE (2)= 60 (Min.), 120 (Typ.) (VCE= - I V , IC = -4 A ) Low Saturation Voltage : VCE (sat) = , TOSHIBA 2SA1300 ic - vce ic - vbe C O L L E C T O R - E M IT T E R V O L T A G E VCE (V


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PDF 2SA1300 961001EAA2'
2sA1300 transistor

Abstract: 2SA1300
Text: 2SA1300 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150 Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA , IE=0 -20


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PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300
2003 - Not Available

Abstract: No abstract text available
Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC , CO. LTD V V MHz pF 1 QW-R208-012,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-012,A UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR


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PDF 2SA1300 -50mA) OT-89 -50mA QW-R208-012
2SA1300

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS 2SA1300 2SA1300 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 5.1 M AX. M EDIUM PO W ER AM PLIFIER APPLICATIONS · · High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A) :hFE(2) = 60(Min.), 120 (Typ.) (VCE = - IV, IC= -4 A ) Low Saturation Voltage : VCE (sat) = -0 .5 V (Max.) (IC , TOSHIBA 2SA1300 IC - VCE < o < o Ic - Vb e C O LLEC T O R - EM IT T ER V O LT A G E VcE


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PDF 2SA1300 961001EAA2' 2SA1300
2011 - 2SA1300L

Abstract: No abstract text available
Text: Free 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K 2SA1300L-xx-T92-R 2SA1300G-xx-T92-R Note: Pin Assignment: E: Emitter C: Collector B: Base www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD 1 of 2 QW-R208-012.Ba 2SA1300 ABSOLUTE , UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications


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PDF 2SA1300 -50mA) OT-89 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K 2SA1300L-xx-T92-R 2SA1300L
2SA1309

Abstract: 2SA1307 2sc3180n 2SA1295 2SA1285 2SA1286 2SA1283 sa1312 2SA1264N 2SA1285A
Text: -0.01 2SA1300 PA/Xhot." -20 -10 -2 0. 75 -0.1 -20 140 600 -1 -0. 5 -0. 5 -2 -0.05 2SA1301 PA -160 , 2SA1300 30* -5 -1 480* 2SC3280 (2-21F1A) BCE 2SA1301 25* -5 -1 470* 2SC3281 (2-21F1A) BCE


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PDF Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1295 2SA1285 2SA1286 2SA1283 sa1312 2SA1285A
sa1306

Abstract: 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
Text: © T 2SA1784 2SB 1210 ✓ □ —A 2SB893 2SA1300 2SB1068 2SB738 2SB976 2SA1282 2S8 1211


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PDF 2SA1606 SA1306 SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1370 2SBU23 2SA1203 sa1306 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
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