The Datasheet Archive

2SA1296 datasheet (19)

Part Manufacturer Description Type PDF
2SA1296 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1296 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1296 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1296 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1296 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1296 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1296 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1296 Others Cross Reference Datasheet Scan PDF
2SA1296 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF
2SA1296 Toshiba TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF
2SA1296 Toshiba TO-92 Transistors Scan PDF
2SA1296 Toshiba PNP transistor Scan PDF
2SA1296-GR Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1296-GR Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1296GR Toshiba Silicon PNP Transistors Scan PDF
2SA1296-GR(F) Toshiba 2SA1296 - Trans GP BJT PNP 20V 2A 3-Pin TO-92 Original PDF
2SA1296-Y Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1296-Y Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1296Y Toshiba Silicon PNP Transistors Scan PDF

2SA1296 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1296

Abstract: 2SC3266
Text: 2SA1296 PNP (PCT) 2SA1296 : mm · 2SC3266 · : PC = 750 mW (Ta = 25°C) (Ta = 25°C) VCBO -20 V VCEO -20 V VEBO -6 V IC -2 A IB -0.5 A PC 750 , ~400 1 2007-11-01 2SA1296 IC ­ VCE -20 Ta = 25°C -15 -1600 hFE -25 , (V) 2007-11-01 2SA1296 · · · · ""


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PDF 2SA1296 2SC3266 SC-43 2SA1296 2SC3266
2SA1296

Abstract: 2SC3266
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1296 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1296 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · · Low Saturation Voltage : V qe (sat)" -0-5 (Max.) @Iq = -2A Complementary to 2SC3266. SYMBOL v CBO VCEO Ve b o RATING -2 0 -2 0 -6 -2 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ca h O < H 03 tr H O < 2SA1296 0 un uj 1 TO SH IBA 2SA1296


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PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266
2SA1296

Abstract: 2SC3266
Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics , capacitance Cob Note: hFE (1) Y: 120~240, GR: 200~400 1 2007-11-01 2SA1296 2 2007-11-01 2SA1296 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266
Not Available

Abstract: No abstract text available
Text: 2SA1296-2 * 1996-11-11 TOSHIBA CORPORATION , SEM ICO NDU CTO R TOSHIBA TRANSISTOR. T O SH IB A 2SA1296 DATA SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TECHNICAL ( 2SA1296 ) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1 , . © 2SA1296 - 1 _ 1996-11-11_ TOSHIBA CORPORATION SEM ICO NDU CTO R T O SH IB A 2SA1296 DATA TECHNICAL ( 2SA1296 ) Ic - VCE hFE - IC COLLECTOR CURRENT Ic


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PDF 2SA1296 2SA1296) 2SC3266. 2SA1296-2*
2SA1296GR

Abstract: 2SA1296
Text: 2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G 2SA1296-Y 120~240 Range Emitter Collector Base J CLASSIFICATION OF hFE(1) Product-Rank H A D 2SA1296-GR REF. B 200~400 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30


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PDF 2SA1296 2SA1296-Y 2SA1296-GR 18-Jan-2011 -10mA, 2SA1296GR 2SA1296
2003 - 2SA1296

Abstract: 2SC3266
Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 , : 200~400 1 2003-03-24 2SA1296 2 2003-03-24 2SA1296 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266
2007 - 2SA1296

Abstract: 2SC3266
Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A · Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics , capacitance Cob Note: hFE (1) Y: 120~240, GR: 200~400 1 2007-11-01 2SA1296 2 2007-11-01 2SA1296 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is


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PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266
2SA1296

Abstract: No abstract text available
Text: 2SA1296 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-0.1mA, IE


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PDF 2SA1296 -10mA, 2SA1296
2SA12

Abstract: 2SA1296 2SC3266 SA12
Text: TOSHIBA 2SA1296 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 SA12 9 6 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : Vqe (sat)= (Max.) @Iq= -2A • Complementary to 2SC3266. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation , 2SA1296 IC - VCE hFE - IC 9 n COMMON EMITTER Ta = 25°C -15^ -10.


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PDF 2SA1296 2SC3266. SC-43 961001EAA2' 2SA12 2SA1296 2SC3266 SA12
2004 - 2SA1296

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 2SA1296 -10mA, 2SA1296
2SB873

Abstract: 2SB1010 948a 2SB1095 2SB1103 2SB 2SB 2SA1296 2S897 939-940 B 947A 2SA1282A
Text: - 57 - fi « Type No. tt S Manuf. = m SANYO * 2 TOSHIBA B a NEC B AZ HITACHI » ± a FUJITSU te T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SB 922 ^ % 2SA122Î 2SB 922L = 2SA1452 2S8 525 / te T 2SB953 2SB 925A fâ T 2SB1019 2SA1645 2SB953A 2SB 926 J = % 2SA1296 2SB976 2SA1282A 2SB1010 2S6 927. = m 2SA1020 2SB873 2SA1282A 2SB1010 2SB 930 te t 2SB1270 2SB 330A te t ZSB1270 2SB 93! te t 2SB1270 2SB 932 te t 2SB1270 2SB 933 te t


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PDF 2SA122Ã 2SA1452 2SB953 2SB1019 2SA1645 2SB953A 2SA1296 2SB976 2SA1282A 2SB1010 2SB873 2SB1010 948a 2SB1095 2SB1103 2SB 2SB 2SA1296 2S897 939-940 B 947A
Not Available

Abstract: No abstract text available
Text: 2SA1296 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C


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PDF 2SA1296 Freq120M
2SC3266

Abstract: 2SA1296
Text: 2SC3266 NPN (PCT) 2SC3266 : mm · 2SA1296 · : PC = 750 mW (Ta = 25°C) (Ta = 25°C) VCBO 20 V VCEO 20 V VEBO 6 V IC 2 A IB 0.5 A PC 750 mW JEDEC TO-92 JEITA SC-43 2-5F1B Tj 150 °C Tstg -55~150 °C : 0.21 g () : (//) (/) () () (Ta = 25


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PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296
Not Available

Abstract: No abstract text available
Text: 2SA1296 T O SH IB A 2 S A 1 296 TO SH IB A TRA N SISTO R PO W ER A M PLIFIER A P P LICA TIO N S SILICO N PNP E P ITA X IA L T Y P E (PCT PROCESS) U n it in m m PO W ER SW ITCHIN G A PPLICA TIO N S r 0 .4 5 0 55 (V lA X , ! I 4.7 M A X . Low Saturation Voltage : V@e (sat)= -0-5 (Max.) @ Ic= -2 A Complementary to 2SC3266. 1 • • 1 , 5.1 M A X T~ sl , n d b o o k . 1996-11-11 1/2 2SA1296 T O SH IB A IC - VCE hFE - IC 1000 500


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PDF 2SA1296 2SC3266.
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1296 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Low Saturation Voltage: VCE (sat) High DC Current Gain 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -2 A PC


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PDF 2SA1296 -10mA
2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: 2000.0 0.5 2SA1296 Transistor for Low-Frequency Small-Signal Amplification PNP -20.0 -2000.0 -0.5 , current 3 2SA1150 High current 3 2SC2710 High current 3 2SA1296 High current 3 2SC3266 High


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PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
2SA1296

Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1296 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF 2SA1296 -10mA, 2SA1296
2sc286

Abstract: 2SA970 2SC1815 2SA1015 2SC2754 2SA1015 2SA1164 2SA1316 2SA1015 GR 2SC18150 2SC3329
Text: 2SC3266 2SA1296 20 2000 750 120-700/400 2 100 0.5 2000 100 120 2 500 - - - - - 2SC3279 2SA1300 10 '2000


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PDF 50vMAX 2SC1815 2SA1015 2SC2868 2SA1158 2SC1627 2SA817 2SC2754 2SA1164 2SC2878* 2sc286 2SA970 2SC1815 2SA1015 2SA1316 2SA1015 GR 2SC18150 2SC3329
2SB1013

Abstract: 2S897 2SB1315 2SB1306 2SB679 2SA1307 2SA1431 1318J 2sb631 hitachi 2SB747
Text: 2SB 1300 S » 2SB1395 2SA1296 2SB976 2SB 1301 s a 2SB1124 2SA1213 2SB1073 2SB1308 2SB 1302


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PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SB1306 2SB679 2SA1307 1318J 2sb631 hitachi 2SB747
2S897

Abstract: 2SA1178 2SA1225 2SA1586 2SA1243 2SA1628 2SA1371 2SA879 2SA1283 2SA1770
Text: › 2SB 1228 -^' 2SB1020 2SB1431 2SB1195 2SB1344 2SB 1229 —' Â¥ 2SA1296 2SB976 2SB 1 230


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PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1586 2SA1243 2SA1628 2SA1371 2SA879 2SA1283 2SA1770
Not Available

Abstract: No abstract text available
Text: - High Current 2SC3266 2SA1296 20 2000 750 120-700/400 2 100 0.5


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PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX
2003 - 2SC3266

Abstract: 2SA1296
Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current


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PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296
2SA1296

Abstract: 2SC3266
Text: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 2 6 6 POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VqE (sat) = °-5V (Max.) (Ie = 2A) • Complementary to 2SA1296 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 20 V Collector-Emitter Voltage vCEO 20 V Emitter-Base Voltage Vebo 6 V Collector Current ic 2 A Base Current IB 0.5 A Collector Power Dissipation PC 750 mW


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PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266
2007 - 2sc3266

Abstract: No abstract text available
Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Power Switching Applications · · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) Complementary to 2SA1296 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20


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PDF 2SC3266 2SA1296 SC-43 2sc3266
2SA1309

Abstract: 2SA1307 2sc3180n 2SA1295 2SA1285 2SA1286 2SA1283 sa1312 2SA1264N 2SA1285A
Text: -5 -2 -5 -0.5 2SA1295 PS» -230 -230 -17 200 -loo -230 40 -4 -5 -2 -5 -0.5 2SA1296 LF PA/PSW


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PDF Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1295 2SA1285 2SA1286 2SA1283 sa1312 2SA1285A
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