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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SA1213-O(TE12L,CF) Toshiba America Electronic Components Chip1Stop 1,300 $1.73 $1.41
2SA1213-Y Toshiba America Electronic Components Chip One Exchange 388 - -
2SA1213-Y-TP Micro Commercial Components Chip1Stop 1,136 $0.33 $0.18
2SA1213-Y(TE12L,CF) Toshiba America Electronic Components Chip1Stop 8,000 $1.73 $1.41
2SA1213YTE12LC Toshiba America Electronic Components ComS.I.T. 18,500 - -

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2SA1213 datasheet (33)

Part Manufacturer Description Type PDF
2SA1213 Kexin Power Switching Applications Original PDF
2SA1213 Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original PDF
2SA1213 Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original PDF
2SA1213 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1213 TY Semiconductor Power Switching Applications - SOT-89 Original PDF
2SA1213 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SA1213 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1213 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1213 Others Catalog Scans - Shortform Datasheet Scan PDF
2SA1213 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1213 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1213 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1213 Others The Japanese Transistor Manual 1981 Scan PDF
2SA1213 Toshiba SOT-89 Transistors Scan PDF
2SA1213 Toshiba Silicon PNP transistor for power switching and power amplifier applications Scan PDF
2SA1213 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF
2SA1213O Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original PDF
2SA1213-O Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1213O Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original PDF
2SA1213OTE12L Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

2SA1213 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2SA1213

Abstract: 2SC2873
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , 2SA1213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2004-07-07 2SA1213 VCE ­ IC VCE ­ IC -1.6 -1.6 VCE -1.2 -10 IB = -5 mA -20 , IC (mA) 2004-07-07 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common , 2SA1213 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to


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PDF 2SA1213 2SC2873 2SA1213 2SC2873
2007 - 2SA1213

Abstract: 2SC2873
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1213 , 2SA1213 VCE ­ IC VCE ­ IC -1.6 VCE (V) Common emitter Ta = 25°C -1.2 IB = -5 mA -10 , 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common emitter IC max (pulse)* 10 ms , 100 120 140 160 Ambient temperature Ta (°C) 4 2006-11-09 2SA1213 RESTRICTIONS


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PDF 2SA1213 2SC2873 2SA1213 2SC2873
2SA1213

Abstract: 2SC2873
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 , 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter , 05-31 - VCE(sat) - IC VBE(sat) - IC 2001 05-31 - TO SH IBA 2SA1213 le - V b e - , 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SA1213 2SC2873 2SA1213
2003 - 2SA1213

Abstract: 2SC2873
Text: 2SA1213 PNP (PCT) 2SA1213 · : mm : VCE (sat) = -0.5 V () (IC = -1 A) · , : (//) ( / ) () () 1 2009-12-21 2SA1213 (Ta = 25 , 2002/95/EC) 2 2009-12-21 2SA1213 VCE ­ IC VCE ­ IC VCE (V) -1.6 Ta = 25 , -3000 (mA) 2009-12-21 2SA1213 IC ­ VBE -2.0 -3000 IC max ()* IC max , 40 60 80 100 Ta 120 140 160 (°C) 4 2009-12-21 2SA1213 ·


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PDF 2SA1213 2SC2873 SC-62 2SA1213 2SC2873
2SA1213

Abstract: 2SC2873
Text: 2SA1213 PNP (PCT) 2SA1213 · : mm : VCE (sat) = -0.5 V () (IC = -1 A) · , : (//) ( / ) () () 1 2006-11-07 2SA1213 (Ta = 25 , 2006-11-07 2SA1213 VCE ­ IC VCE ­ IC VCE (V) -1.6 Ta = 25°C -1.2 IB = -5 mA -10 , 2SA1213 IC ­ VBE -2.0 -3000 IC max ()* IC max -1000 () -1.6 10 ms* 1 ms , Ta 120 140 160 (°C) 4 2006-11-07 2SA1213 20070701-JA ·


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PDF 2SA1213 2SC2873 SC-62 20070701-JA 2SA1213 2SC2873
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
Text: - 63 - m s Type No. tt S Maîiuf. H iÂ¥ SANYO S 2 TOSHIBA 0 « NEC s a HITACHI » ± a FUJITSU fâ T MATSUSHITA H S MITSUBISHI □ — A ROHM 2 SB 1114 -• S « 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB 1115 „ 0 S 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB 1115A 0 * 2SA1213 2SB1002 2SB766A 2SB1260 2SB 1116, 0 m. 2SB1229 2SA1315 2SB1059 2SB621A 2SA1283 2SB1041 2S8 I1I5A a n , ¥ 2SA1736 2SB1440 2SA1797 2SB 1124 , Â¥ 2SA1213 2SB1572 2SB1446 2SB 1127, Â¥ 2SA1357 2SBU51


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
2007 - 2SA1213

Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
Text: MCC Micro Commercial Components 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating Collector-Emitter


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PDF 2SA1213 2SA1213-O 2SA1213-Y 05Adc) 10Vdc, 2SA1213 pnp hfe 120-240 2SA1213Y
Not Available

Abstract: No abstract text available
Text: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Symbol , 1.0 ìs 0.1 4008-318-123 1 of 3 SMD Type Product specification 2SA1213 Test , Product specification 2SA1213 http://www.twtysemi.com sales@twtysemi.com 4008-318-123 3 of


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PDF 2SA1213 2SC2873
2SA1213

Abstract: 2SC2873
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 , r n : 1 2001 10-29 - TO SH IBA 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25 , C fO fO H 3 H O fO < o O > O o 2SA1213 NJ V O TO SH IBA 2SA1213 le - V , SH IBA 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SA1213 2SC2873 2SA1213
2sa1213

Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1213 Unit in m m POWER AMPL I F I E R APPLICATIONS. POWER SWITCHING APPLICATIONS. 1.7 MAX . a4±ao5. p a FEATURES: . Low Saturation Voltage (IC =-1A) : t s t g , ) 163 2SA1213 ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter , ) Classification 0 : 70^140, Y : 120^-240 164 2SA1213 V CE - Ic V CE - IC V CE - IC h , CURRENT J0 (mA) COLLECTOR CURRENT Ic (mA ) 165 2SA1213 1 C - V BE SAFE


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PDF 2SA1213 Q4-a05 2SC2873 2sa1213
2006 - Not Available

Abstract: No abstract text available
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , failure rate, etc). 1 2006-11-09 2SA1213 Electrical Characteristics (Ta = 25 , )-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1213 VCE ­ IC -1.6 -1.6 Common , 2SA1213 IC ­ VBE -2.0 Common emitter VCE = -2 V -1.6 -3000 Safe Operating Area IC max (pulse)* 1 s , ) 4 2006-11-09 2SA1213 RESTRICTIONS ON PRODUCT USE · The information contained herein is


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PDF 2SA1213 2SC2873 SC-62
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1213 1< ;a 1 1 1 3 w êêf m m v PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 4.6MAX , - 1/4 TOSHIBA 2SA1213 ELECTRICAL CHARACTERISTICS Ta = 25°C) CHARACTERISTIC Collector , 2SA1213 V C E - IC V C E - IC C O LLECTO R C U R R E N T Iç (A) C O LLE C TO , CURRENT IC fmA) COLLECTOR CURRENT IC (mA) 1997 04-10 - 3/4 TOSHIBA 2SA1213


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PDF 2SA1213 2SC2873
2SA1213

Abstract: 2SC2873
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1213 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 2SA1213 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) : VCE (sat)= -0.5V (Max.) (IC = -1A) High Speed Switching Time: tstg=1.0/«s(Typ.) P q = 1~2W (Mounted on Ceramic Substrate) Small Flat Package Complementary , /4 TOSHIBA 2SA1213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector , < tr O < O o O > 2SA1213 OJ COLLECTOR POWER DISSIPATION Pq (W) COLLECTOR


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PDF 2SA1213 2SC2873 2SA1213 2SC2873
2009 - 2SA1213

Abstract: 2SC2873
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , report and estimated failure rate, etc). 1 2009-12-21 2SA1213 Electrical Characteristics (Ta = , electronic equipment. 2 2009-12-21 2SA1213 VCE ­ IC VCE ­ IC -1.6 VCE (V) Common , -1000 -3000 (mA) 2009-12-21 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 , 2SA1213 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SA1213 2SC2873 2SA1213 2SC2873
2SA1213

Abstract: SOT-89-D SILICON PNP POWER TRANSISTOR transistor marking 2a
Text: 2SA1213 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Dimensions In Millimeters D1 Symbol A Dimensions In Inches E E1 0.520 0.013 0.020 0.360 0.560 0.014 0.022 0.350 0.440 0.014 0.017 4.400 4.600 , will not be informed individual Page 1 of 3 2SA1213 Elektronische Bauelemente http , will not be informed individual Page 2 of 3 2SA1213 Elektronische Bauelemente http


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PDF 2SA1213 OT-89 500TYP 060TYP 01-Jun-2002 2SA1213 SOT-89-D SILICON PNP POWER TRANSISTOR transistor marking 2a
2SA1213

Abstract: 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
Text: Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta , Transistors SMD Type 2SA1213 Test Circuit hFE Classification N Marking Rank hFE O 70 Y , Type 2SA1213 www.kexin.com.cn 3 Kexin


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PDF 2SA1213 2SC2873 2SA1213 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1705
Text: 2SB1119 2SA1203 2SB1000A 2SB766 2SB1132 2SB 799 b a 2SB1122 2SA1213 2SB766A 2SB1189 2SB 800 b s 2SA1116 2SA1202 2SB767 2SB1189 2SB 801 b m 2SBÍ122 2SA1213 2SB766 2SB1260 2SB 802 b m 2SB1122 2SA1213 2SB766A 2SB1260 2SB 803 ED 2SA1416 2SA1201 2SB 804 b « 2SA1416 2SB1260 2SB 805


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PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1705
2013 - Not Available

Abstract: No abstract text available
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , Start of commercial production 1980-07 1 2013-11-01 2SA1213 Electrical Characteristics (Ta , in electrical and electronic equipment. 2 2013-11-01 2SA1213 VCE – IC VCE – IC â , ˆ’3000 (mA) 2013-11-01 2SA1213 IC – VBE Safe Operating Area −2.0 −3000 Common , 160 Ambient temperature Ta (°C) 4 2013-11-01 2SA1213 RESTRICTIONS ON PRODUCT USE â


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PDF 2SA1213 2SC2873
2002 - 2SA1213

Abstract: 2SC2873
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , Note 1: Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-19 2SA1213 Electrical , to 240 Marking Type name hFE classification NO 2 2002-08-19 2SA1213 VCE ­ IC , ) 2002-08-19 2SA1213 IC ­ VBE Safe Operating Area -2.0 -3000 Common emitter IC max (pulse , 100 120 140 160 Ambient temperature Ta (°C) 4 2002-08-19 2SA1213 RESTRICTIONS


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PDF 2SA1213 2SC2873 2SA1213 2SC2873
2002 - Not Available

Abstract: No abstract text available
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , substrate (250 mm × 0.8 t) 1 2002-08-19 2SA1213 Electrical Characteristics (Ta = 25 , name hFE classification NO 2 2002-08-19 2SA1213 VCE ­ IC -1.6 -1.6 VCE ­ IC (V , (mA) Collector current IC (mA) 3 2002-08-19 2SA1213 IC ­ VBE -2.0 Common , Ambient temperature Ta (°C) 4 2002-08-19 2SA1213 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF 2SA1213 2SC2873 SC-62
Not Available

Abstract: No abstract text available
Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier , 1 2009-12-21 2SA1213 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , electronic equipment. 2 2009-12-21 2SA1213 VCE – IC VCE – IC −1.6 −1.6 VCE , ˆ’1000 −3000 (mA) 2009-12-21 2SA1213 IC – VBE Safe Operating Area −2.0 â , Ambient temperature Ta (°C) 4 2009-12-21 2SA1213 RESTRICTIONS ON PRODUCT USE • Toshiba


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PDF 2SA1213 2SC2873 50led
2SA1213

Abstract: No abstract text available
Text: 2SA1213 2SA1213 TRANSISTOR (PNP) SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25) 1. BASE A 1 2. COLLECTOR 2 V 3 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -50


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PDF 2SA1213 OT-89 -10mA 2SA1213
2008 - 2SA1213-O

Abstract: No abstract text available
Text: MCC Micro Commercial Components 2SA1213 TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Features x x x x x Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maximum Ratings Symbol VCEO VCBO VEBO IC IB PC TJ TSTG Rating


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PDF 2SA1213 2SA1213-O 2SA1213-Y
sa1306

Abstract: 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
Text: 2SB810 2SA1390 2SA1398 2SA854S 2SB 1208 fé T 2SB1121 2SA1213 2SB1114 2SB1000A 2SBU88 2SB 1209 fà , O—A 2SB1121 2SA1213 2SB1114 2SB1073 2SB1073 2SA1363 2SB 1212 □ —A 2SA1770 2SA1013 2SA1674


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PDF 2SA1606 SA1306 SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1370 2SBU23 2SA1203 sa1306 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
2SB1013

Abstract: 2S897 2SB1315 2SB1306 2SB679 2SA1307 2SA1431 1318J 2sb631 hitachi 2SB747
Text: 2SB 1300 S » 2SB1395 2SA1296 2SB976 2SB 1301 s a 2SB1124 2SA1213 2SB1073 2SB1308 2SB 1302 , 2SB892 2SA1020 2SB 1313 □—A 2SB1123 2SA1213 2SB 1314 , H * 2SA1469 2SB1015 2SB1094


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PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SB1306 2SB679 2SA1307 1318J 2sb631 hitachi 2SB747
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