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2SA1209S ON Semiconductor Rochester Electronics 13,208 $0.45 $0.37
2SA1209S SANYO Semiconductor Co Ltd Rochester Electronics 1,184 $0.72 $0.59

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2SA1209 datasheet (20)

Part Manufacturer Description Type PDF
2SA1209 Sanyo Semiconductor TRANS GP BJT PNP 160V 0.014A 3TO-126 Original PDF
2SA1209 Sanyo Semiconductor High-voltage switching, predriver Original PDF
2SA1209 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1209 Others Shortform Transistor PDF Datasheet Scan PDF
2SA1209 Others Shortform Transistor PDF Datasheet Scan PDF
2SA1209 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1209 Others Cross Reference Datasheet Scan PDF
2SA1209 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1209 Others Silicon PNP Transistor Scan PDF
2SA1209 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1209 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1209 Others The Japanese Transistor Manual 1981 Scan PDF
2SA1209 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1209 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
2SA1209-R Sanyo Semiconductor TRANS GP BJT PNP 160V 0.014A 3TO-126 Original PDF
2SA1209R Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1209-S Sanyo Semiconductor TRANS GP BJT PNP 160V 0.014A 3TO-126 Original PDF
2SA1209S Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1209-T Sanyo Semiconductor TRANS GP BJT PNP 160V 0.014A 3TO-126 Original PDF
2SA1209T Others Transistor Shortform Datasheet & Cross References Scan PDF

2SA1209 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1209

Abstract: 2sa1209 equivalent 2SC2911 HIGH VOLTAGE POWER PNP TRANSISTORS S100-400 2SC291
Text: Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed , Product Specification 2SA1209 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1209


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PDF 2SA1209 O-126 2SC2911 -10mA 2SA1209 2sa1209 equivalent 2SC2911 HIGH VOLTAGE POWER PNP TRANSISTORS S100-400 2SC291
2SA12

Abstract: c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI
Text: Ordering number: EN779C _ 2SA1209 /2SC2911 PNP/NPN Epitaxial Planar Silicon Transistors 160V , ( ): 2SA1209 Maximum Ratings/Ta = 25°C unit Collector-to-base voltage vCBO (—) 180 V Collector-to-emitter , 1.5 ßS 0.1 MS : The 2SA1209 /2SC2911 are classified by 10 mA hpE as follows: 100 R 200 140 S 280 , / 5147KI/ 3135KI/0193KI, TS, No.779-1/4 2SA1209 /2SC2911 lC - VCE -140 -120 -100 -60 -60 -20 0 -10 -20 , - 100 o 10 -I 2SA1209 J -02 -04 -OS -0-ft


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PDF EN779C 2SA1209/2SC2911 60V/140mA 2SA1209 2SA12 c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI
2002 - 2Sc2911

Abstract: 2SA1209 ENN779D
Text: Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209 /2SC2911 160V , switching speed. unit:mm 2009B [ 2SA1209 /2SC2911] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 , -126 1.2 1 ( ) : 2SA1209 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25 , hFE Unit (­)0.1 *: The 2SA1209 /2SC2911 are classified by 10mA hFE as follows : Rank max , JAPAN 70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5 2SA1209 /2SC2911


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PDF ENN779D 2SA1209/2SC2911 60V/140mA 2009B 2SA1209/2SC2911] O-126 2SA1209 2Sc2911 2SA1209 ENN779D
2007 - 2SC2911

Abstract: 2SA1209
Text: 2SA1209 / 2SC2911 Ordering number : EN0779E SANYO Semiconductors DATA SHEET 2SA1209 , voltage. Good linearity of hFE and small Cob. Fast switching time. Specifications ( ) : 2SA1209 , 2SA1209 / 2SC2911 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions , specified Test Circuit. tf 0.1 µs * : The 2SA1209 /2SC2911 are classified by 10mA hFE as follows , VCE 140 2SA1209 0.5 0.6 m -140 0.4mA 100 0.3mA 80 0.2mA 60 40


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PDF 2SA1209 2SC2911 EN0779E 140mA 2SA1209 2SC2911
2SA1209

Abstract: 2SC2911
Text: 2SA1209 / 2SC2911 No. N 0 7 7 9 E No.N779C PNP / NPN 2SA1209 / 2SC2911 160V / 140mA , AF 100W FBET hFE Cob 2SA1209 Absolute Maximum Ratings / Ta , -00000752 / 2SA1209 / 2SC2911 min 100 typ unit max 400 hFE fT Cob , pF (- 0.14) (- 0.4) 0.07 0.3 V V : 2SA1209 /2SC2911 10mA hFE hFE R 100 200 S , -0.1mA -20 0 0 A 2SA1209 -120 IC - VCE 140 0.6 m -140 0.5 2SC2911


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PDF 2SA1209 2SC2911 N779C 140mA 2SA1209 1111MH D246YO 5091YO 2SC2911
2SA1209

Abstract: 2sa120 2SC2911
Text: SavantIC Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 , Specification 2SA1209 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , dimensions 3 2SA1209 SavantIC Semiconductor Product Specification 2SA1209 Silicon PNP


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PDF 2SA1209 O-126 2SC2911 -10mA 2SA1209 2sa120 2SC2911
2SA1209

Abstract: 2SC2911
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION • With TO-126 package • Complement to type 2SC2911 • High breakdown voltage • Fast switching speed , Specification Silicon PNP Power Transistors 2SA1209 CHARACTERISTICS Tj=25"C unless otherwise specified SYMBOL , Specification Silicon PNP Power Transistors 2SA1209 PACKAGE OUTLINE E-mail: aoksemic@msn.com 3/4 8.5MAX ^ i o L , Semiconductor Product Specification Silicon PNP Power Transistors 2SA1209 Col lector-to emitter voltage, VcE â


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PDF 2SA1209 O-126 2SC2911 2SC2911
1998 - 2Sc2911

Abstract: 2SA1209
Text: Ordering number:EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209 /2SC2911 160V , switching speed. unit:mm 2009A [ 2SA1209 /2SC2911] Switching Test Circuit IC , :Emitter JEDEC:TO-126 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25 , tstg See specified Test Circuit 1.5 µs *: The 2SA1209 /2SC2911 are classified by 10mA hFE as , 71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/4 2SA1209 /2SC2911 No.779-2/4 2SA1209


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PDF EN779C 2SA1209/2SC2911 60V/140mA 2SA1209/2SC2911] 10IB1= 10IB2 O-126 2SA1209 2Sc2911 2SA1209
Not Available

Abstract: No abstract text available
Text: Ordering number : EN779C 2SA1209 /2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C , -* 2SA1209 /2SC2911 Common emitter DC current gain, hpg ■I ¿bb EE¿bTOD 2SA1209 /2SC2911 ^¿D¿bb¿ 2SA1209 /2SC2911 2SA1209 /2SC22911 Collector Dissipation^; \V


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PDF EN779C 2SA1209/2SC2911 60V/140mA 2SC2911 2SA1209/2SC22911
2005 - 2SC2911

Abstract: 2SA1209 S100-400
Text: JMnic Product Specification 2SA1209 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS , Tstg Storage temperature -55~150 JMnic Product Specification 2SA1209 Silicon PNP , S T 100-200 140-280 200-400 2 JMnic Product Specification 2SA1209 , Specification 2SA1209 Silicon PNP Power Transistors 4 JMnic


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PDF 2SA1209 O-126 2SC2911 -10mA 2SC2911 2SA1209 S100-400
2SA970

Abstract: 2SB927 2SA101S 2sa977 2SA933LN 2SA1783 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
Text: ) 2SA1265N 2SB1154 2SA1633 2SA 1142 b a 2SA1209 2SB648A 2SA977 2SA 1143 = m 2SA1177 2SA933 2SA1309A 2SA933S 2SA 1144 „ x s 2SA1209 2SA1142 2SB648 2SA914 2SA 1145 - s 2 2SA1208 2SA916


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PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA970 2SB927 2SA101S 2sa977 2SA933LN 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
2sa970

Abstract: 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1207 2SA1038 2SA904A 2sa949
Text: 2SA970 2SA1142 2SA1110 2SA1285 2SA1482 2SA 899 ^ «±a 2SA1209 2SA970 2SA1142 2SB648A 2SA1110 , 2SB1085A 2SA 913A IS T 2SA1306A 2SA1112 2SB1085B 2SA 914 te t 2SA1209 2SA1091 2SA1142 2SB649A


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1038 2sa949
2SA1161

Abstract: TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1156 2SA1209 SA1162
Text: 2SA1209 HV SW/LF A -180 -160 -0. 14 1 10 -0. 1 -80 100 400 -5 -0.01 -0. 4 -0.05 -0.005 2SA1210 HV SW , -0.01 0. 1* 0.1* 1. 5* 4* 2SC2911 (TO—126) ECB 2SA1209 150* -10 -0.01 0.1* 0.1* 1. 5* 4


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PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1209
2SA999

Abstract: 2SA1015 2sa733 2SA1038 2SA1026 2SA921 2SA933 2sa 1023 2SA1309A 2SA1318
Text: 2SA1038 2SA 1018 , fé T 2SA1624 2SA 1019 „ H * 2SA1209 2SA949 2SA916 2SB648A 2SA1038 2SA


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PDF 2SA1011 2SB940A 2SB1085B 1006B 2SA1306B 2SB817 2SA1011 2SB940 2SB1085 2SB921 2SA999 2SA1015 2sa733 2SA1038 2SA1026 2SA921 2SA933 2sa 1023 2SA1309A 2SA1318
2SB737

Abstract: 2SA1015 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1142 2SA1177
Text: - IS - a « Type No. tt « Manuf. H SANYO M 2 TOSHIBA b a NEC b iL HITACHI S ± il FUJITSU fö T MATSUSHITA H S MITSUBISHI □ — a ROHM 2SA 973 J fâ T 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA 977 85 T 2SA1209 2SA949 2SA1142 2SB648 2SA 977A fé T 2SA1352 2SA1142 2SA 978 = m 2SA929 2SA990 2SA836 2SA933 2SA 979 X = » 2SA1240 2SA970 2SA 980 •y-VÍTV 2SB816 2SB849 2SA 981 y-yry 2SB816 9SW49 2SA 982 vyjy 2SB816 2SB849 2SA 983 X e a 2SA1015 2SA


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PDF 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA1209 2SA949 2SA1142 2SB648 2SA1352 2SB737 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1177
2SA1209

Abstract: 2SA1209-SPICE 2sa1209 equivalent 2SA1209/2SC22911
Text: 2SA1209 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 47.00f NF 1 IKF 400.0m NE 2 NR 1 100.0m IKR NC 2 IRB 600.0u RE 210.0m XTB 0 XTI 3 VJE 680.0m TF 900p VTF 500 PTF 0 VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter BF VAF ISE BR VAR ISC RB RBM RC EG CJE MJE XTF ITF CJC MJC TR KF Value 210 53 60.00f 2.7 25 300.0p 36 17.6 180.0m 1.11 45.00p


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PDF 2SA1209 2SA1209 2SA1209-SPICE 2sa1209 equivalent 2SA1209/2SC22911
2SC308

Abstract: 2SA1699 2SA1392
Text: voltage 2SA1319 2SC3332 2SA1699 2SC4002 2SA1208 2SC2910 2SA1209 2SC2911 2SA1248 2SC3116 2SA1249 2SC3117


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PDF SC-51 2SA1683 2SC4414 2SA1392 2SC3383 T0-126 2SA1450 2SB631, 2SD600, O-126 2SC308 2SA1699
2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
Text: 2SA1310 2SA1115 2SA933S 2SA 1482 □ —A 2SA1209 2SA1145 2SA1124 2SA 1483 s: s: 2SB1122 2SA1463


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PDF 2SB698 2SA950 2SA1515 2SA1150 2SA1515S 2SA1298 2SB1197K 2SA1257 2SA1330 2SB792 2SA1441 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
2SA818

Abstract: 2SB681 TOSHIBA 2SB681 2SC4341 2SB849 2SB601 2sb669 2SB558 2SB688 2SA1142
Text: - 49 - s « Type No. a « Manuf. = ft sanyo toshiba b m. nec b iL hitachi « ± il Fujitsu fé t matsushita h £ mitsubishi □ - a rohm 2sb 648 b ±L 2sa1209 2sa1142 2sb 648a s ÍL 2 sa12 0 9 2sa818 2sa1142 2sa1284 2sb 649 s iL 2sa1220 2sb1086 2sb 649a s iL 2sa1011 2sa968 2sa1220a 2sb1086a 2sb 650 (h) s iL 2sb1031k 2sb 653a s iL 2sb558 2sb849 2sb 654a B iL 2sb849 2s8 655a a iL 2sb681 2sb 668 • fé T 2sb675 2sb765 00 2sb949 2sb1341 2sb 669


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PDF 2sa1209 2sa1142 2sa818 2sa1284 2sa1220 2sb1086 2sa1011 2sa968 2sa1220a 2SB681 TOSHIBA 2SB681 2SC4341 2SB849 2SB601 2sb669 2SB558 2SB688 2SA1142
2SB1099

Abstract: 2SB615 nec 2SB1099 B676 2SB886 2S8834 2sb536 TOSHIBA 2SB613 1091 1086a
Text: 2SB886 2SB1339 2SB 1108 fé t 2SB1099 2SB1391 2SB1344 2SB 1109 - b iL 2SA1209 BF457 2SAU56


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PDF 2SA1706 2SB880 2SB676 2SB601 2SB950 2SB1341 2SB886 2SB673 2SB1108 2SB1343 2SB1099 2SB615 nec 2SB1099 B676 2S8834 2sb536 TOSHIBA 2SB613 1091 1086a
toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: 2SA915 2SA1124 2SA1285 2SA1482 2SB 716A B iL 2SA1208 2SA1482 2SS 717 - B ÌL 2SA1209 2SA818


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
transistor 2SB1142

Abstract: 2SA1750 2SB1143 2SB612K 2sc3788 sanyo transistor tt series
Text: 1. 3 *10 1. 5 *10 1. 5 *10 1. 3 *8 1. 3 5 100-400 50m 5m 0.4 0.3 0.6 150 2SA1209 2SC2911 2SA1380


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PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 2SA1750 2SB1143 2SB612K 2sc3788 sanyo transistor tt series
2SB612K

Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Text: 150 150 70 150 120 400 500 120 400 70 100 1200 2200 2SA1209 2SC2911 2SA1380 2SC3502 2SA1353 2SC3417


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PDF T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SC1051P 2SD977 3SK190 2SA1019
Text: 2SA1208 2SA1209 2SA1259 2SA1289 2SA1700 2SA1784 2SA1562 2SB514 2SB1141 2SB816 2SB816 2SB817 2SB817 2SB507


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PDF 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017 2SA1019 2SA1047 2SA1260 2SA1288 2SD1028 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SC1051P 2SD977 3SK190
DS442

Abstract: 2sa1209 equivalent ctv circuit diagram ku vsat amplifier STK792-110 2SA1209 2SC2911 TR11 2SC2911 equivalent
Text: ) STK792-110 9Pin N.C. V.DY ; R-5.5Q L-9,9mH Vcc? + 20V vcca + 120 V TEI 2SA1209 TR2 2SC2911 D1


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PDF STK792-110 STK792-110 DS442 2sa1209 equivalent ctv circuit diagram ku vsat amplifier 2SA1209 2SC2911 TR11 2SC2911 equivalent
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