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Toshiba America Electronic Components
2SA1204-Y(TE12L,C)
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Toshiba America Electronic Components
2SA1204-Y(TE12R,CF
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2SA1204 datasheet (28)

Part Manufacturer Description Type PDF
2SA1204 Kexin Audio Frequency Amplifier Applications Original PDF
2SA1204 Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-5K1A) Original PDF
2SA1204 Toshiba PNP transistor Original PDF
2SA1204 TY Semiconductor Audio Frequency Amplifier Applications - SOT-89 Original PDF
2SA1204 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SA1204 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1204 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1204 Others Catalog Scans - Shortform Datasheet Scan PDF
2SA1204 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1204 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1204 Others The Japanese Transistor Manual 1981 Scan PDF
2SA1204 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1204 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1204 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
2SA1204 Toshiba SOT-89 Transistors Scan PDF
2SA1204 Toshiba Silicon PNP transistor for audio frequency amplifier applications Scan PDF
2SA1204O Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-5K1A) Original PDF
2SA1204-O Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1204OTE12L Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
2SA1204OTE12R Toshiba 2SA1204 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

2SA1204 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 PNP (PCT) 2SA1204 : mm · : hFE = 100~320 · 1 W · IC · 1.0 W~2.0 W · 2SC2884 (Ta = 25°C) VCBO -35 , : (//) ( / ) () () 1 2009-12-21 2SA1204 (Ta = 25 , (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-12-21 2SA1204 IC ­ VCE hFE ­ IC -800 , 160 (°C) 2009-12-21 2SA1204 · · · · ""


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PDF 2SA1204 2SC2884 SC-62 2SA1204 2SC2884
2SA1204

Abstract: 2SC2884
Text: 2SA1204 PNP (PCT) 2SA1204 : mm · : hFE = 100~320 · 1 W · IC · 1.0 W~2.0 W · 2SC2884 (Ta = 25°C) VCBO -35 , : (//) ( / ) () () 1 2006-11-07 2SA1204 (Ta = 25 , . (: : ) 2 2006-11-07 2SA1204 IC ­ VCE hFE ­ IC -800 1000 Ta = 25°C -600 , ) -1000 IC max () 80 100 Ta 120 140 160 (°C) 2006-11-07 2SA1204


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PDF 2SA1204 2SC2884 SC-62 20070701-JA 2SA1204 2SC2884
2004 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm · High DC current gain: hFE = 100 to 320 · Suitable for , : Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SA1204 Electrical Characteristics , )-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1204 IC ­ VCE hFE ­ IC -800 , ) 2004-07-07 2SA1204 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is


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PDF 2SA1204 2SC2884 2SA1204 2SC2884
2006 - Not Available

Abstract: No abstract text available
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications · · · · · High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 , 2006-11-09 2SA1204 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current , 2SA1204 IC ­ VCE -800 -8 -7 -6 -5 -600 -4 -3 -400 -2 -200 IB = -1 mA Common emitter 1000 500 300 , VCE (V) Ambient temperature Ta (°C) 3 2006-11-09 2SA1204 RESTRICTIONS ON


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PDF 2SA1204 2SC2884 SC-62
2002 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm · High DC current gain: hFE = 100 to 320 · Suitable for , : Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1204 Electrical Characteristics , hFE classification RO 2 2002-08-13 2SA1204 IC ­ VCE -800 -6 Common emitter , 100 120 140 160 Ambient temperature Ta (°C) 3 2002-08-13 2SA1204 RESTRICTIONS


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PDF 2SA1204 2SC2884 2SA1204 2SC2884
2002 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm · High DC current gain: hFE = 100 to 320 · Suitable for , : Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-13 2SA1204 Electrical Characteristics , hFE classification RO 2 2002-08-13 2SA1204 IC ­ VCE hFE ­ IC -800 1000 , 120 140 160 Ambient temperature Ta (°C) 3 2002-08-13 2SA1204 RESTRICTIONS ON


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PDF 2SA1204 2SC2884 2SA1204 2SC2884
2009 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications · High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 , failure rate, etc). 1 2009-12-21 2SA1204 Electrical Characteristics (Ta = 25 , electronic equipment. 2 2009-12-21 2SA1204 IC ­ VCE hFE ­ IC -800 1000 (mA , 160 Ambient temperature Ta (°C) 3 2009-12-21 2SA1204 RESTRICTIONS ON PRODUCT USE ·


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PDF 2SA1204 2SC2884 2SA1204 2SC2884
A1204

Abstract: 2SA1204 2SC2884
Text: TOSHIBA TO SHIBA TRANSISTOR 2SA1204 AUD IO FREQUENCY A M PLIFIER APPLICATIONS 2SA1204 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 ±0.05 High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate) Small Flat Package Complementary to 2SC2884 M A X IM U M RATINGS (Ta = 25°C) + 0.08 , < 2SA1204 TOSHIBA 2SA1204 RESTRICTIONS ON PRODUCT USE 000707EAA · TO SHIBA is continually


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PDF 2SA1204 2SC2884 A1204 2SA1204 2SC2884
2SA1204

Abstract: 2SC2884 A1204
Text: TOSHIBA TO SHIBA TRANSISTOR 2SA1204 AUD IO FREQUENCY A M PLIFIER APPLICATIONS 2SA1204 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX. 0.4 ±0.05 High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on , < o < DC C U R R EN T G A IN hpE O I cr d d < O < 2SA1204 TOSHIBA 2SA1204 RESTRICTIONS ON PRODUCT USE 000707EAA · TO SHIBA is continually working to improve the


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PDF 2SA1204 2SC2884 2SA1204 2SC2884 A1204
2007 - 2SA1204

Abstract: 2SC2884
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications · High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 , failure rate, etc). 1 2006-11-09 2SA1204 Electrical Characteristics (Ta = 25 , 2006-11-09 2SA1204 IC ­ VCE hFE ­ IC -800 1000 (mA) Collector current IC -6 Common , Ta (°C) 3 2006-11-09 2SA1204 RESTRICTIONS ON PRODUCT USE 20070701-EN · The


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PDF 2SA1204 2SC2884 2SA1204 2SC2884
equivalent 2SC2655

Abstract: 2SA949 equivalent 2SC2873 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2655/Y/c2655 equivalent 2SA1213 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba 2sc2655
Text: 2SC3268 amplitcer R F Low noise 2SC3301 amplitcer 2SA12-3 2SC2883 2SA1204 2SC2884 120 -8 0 80 -3 0 30 -3 0 , MA 2SA1200 2SC2881 2SA1201 2SC2882 2SA1202 2SC2883 2SA1203 2SC2884 2SA1204 2SC2873 2SA1213 -


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PDF 0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent 2SC2873 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2655/Y/c2655 equivalent 2SA1213 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba 2sc2655
2011 - 2SA1204

Abstract: No abstract text available
Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications · · · · · High DC current gain: hFE(1) = 100 to 320 Suitable for output stage of 1 , 2011-02-04 2SA1204 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current , electronic equipment. 2 2011-02-04 2SA1204 IC ­ VCE -800 -8 -7 -6 -5 -600 -4 -3 -400 -2 -200 IB , voltage VCE (V) Ambient temperature Ta (°C) 3 2011-02-04 2SA1204 RESTRICTIONS ON PRODUCT


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PDF 2SA1204 2SC2884 SC-62 2SA1204
2SA1204

Abstract: power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base , -0.5 V -0.8 Base-Emitter Voltage www.kexin.com.cn 1 Transistors SMD Type 2SA1204


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PDF 2SA1204 2SC2884 -10mA -100mA -700mA -500mA -20mA 2SA1204 power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
Not Available

Abstract: No abstract text available
Text: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V , specification 2SA1204 hFE Classification R Marking Rank hFE O 100 Y 200 160 320


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PDF 2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA
2SA1204

Abstract: 2SC2884 A1204 TA155
Text: TOSHIBA TOSHIBA TRANSISTOR AUDIO FREQUENCY AM PLIFIER APPLICATIONS 2SA1204 2SA1204 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 4.6MAX. 1.7MAX. 1.6MAX -j-0.4 + 0.05 High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate) Small Flat Package Complementary to 2SC2884 M A X IM U M RATINGS (Ta = 25°C) + 0.08 , TO SH IBA Sem iconductor Reliability Handbook. 1996-09-02 1/2 TOSHIBA 2SA1204 IC - VCE


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PDF 2SA1204 2SC2884 961001EAA2' 2SA1204 2SC2884 A1204 TA155
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR TOSHIBA TRANSISTOR. T O SH IB A 2 SA1204 TECHNICAL DATA SILICON PNP EPITAXIAL TYPE (PCT PROCESS) ( 2SA1204 ) AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm 4.6MAX. 1.7MAX. 1.6MAX 0.4 + 0.05 · · · · · High DO Current Gain : -100-320 Suitable for Output Stage , injury or d am ag e to p rope rty. 2SA1204 - 1 1996-09-02 TOSHIBA CORPORATION in developing your , T O SH IB A 2 SA 1 204 TECHNICAL DATA ( 2SA1204 ) le - VCE 1000 hFE - IC Ta =


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PDF SA1204 2SA1204) 2SC2884
Not Available

Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1204 Unit in mm 4.6 m a x . 1.7 MAX. Q4±a05 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain : hFE=1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . PC= 1 ~ 2 W (Mounted on Ceramic Substrate) a45-ao5 + 0.08 . 3 = . Small Flat Package . Complementary to 2SC2884 a4-ao5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC , : 0.052g Type Name hpg Rank °c °c Pc ^ : 2SA1204 mounted on ceramic substrate (250mm2x 0.8t


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PDF 2SA1204 a45-ao5 2SC2884 a4-Q05 -10mA, -100mA -700mA -500mA, -20mA -10mA
2SA1204

Abstract: 2SC2884 SA12
Text: TOSHIBA 2SA1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 SA12 0 4 AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm High DC Current Gain : hFE = 100-320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate) Small Flat Package Complementary to 2SC2884 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO , . 1996-09-02 1/2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SA1204 IC - VCE hfe


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PDF 2SA1204 2SC2884 250mm2X0 SA12
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
Text: 2S81Û00 2SB956 2SA1365 2SB1132 2SB 1119 ^ - ¥ 2SA1204 2SB798 2SB1000 2SB956 2SA1365 2SB1132 2SB 1120


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 2SA1770 2SB1545 2SA1283 nec 2SB1099 1116a
power transistor audio amplifier 500 watts

Abstract: 2SA1204 2SC2884
Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SC2884 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1204 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA PC 500


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PDF 2SC2884 2SA1204 100mA 700mA 500mA power transistor audio amplifier 500 watts 2SA1204 2SC2884
2SA1161

Abstract: TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1156 2SA1209 SA1162
Text: 0.5 1* -0. 1 -30 100 320 -2 -0.5 -2 -1. 5 -0.03 2SA1204 MS LF PA -35 -30 -0.8 0. 5 1* 0. 1 -35 100 , * -2 -0. 5 50 2SC2883 SC-62 ECB 2SA1203 120* -5 -0.01 19* 2SC2884 SC-62 ECB 2SA1204 800


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PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1209
Not Available

Abstract: No abstract text available
Text: TO SHIBA 2SA1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 SA 1 2 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS Unit in mm 1 .6 M A X . —J- - 4 .6 M A X . High DC Current Gain : 1 e = 100~320 if 1 .7 M A X . 0 .4 + 0 .0 5 i Suitable for Output Stage of 1 Watts Amplifier X P q = 1~2W (Mounted on Ceramic Substrate) Small Flat Package + , k . 1996- 09-02 1/2 TO SHIBA 2SA1204 hFE - IC IC - VCE CO LLE C T O R -E M IT T


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PDF 2SA1204 2SC2884
2SB816

Abstract: 2SB1212 2SB873 2SC4341 2SB921 2sb 989 2SB941 2SA1120 2SB1085B 2SB1416
Text: 2SB1122 2SA1204 2SB766 2SA1369 2SB1132 2SB 1001 0 Al 2SB1121 2SA1213 2SB1073 2SA1363 2SB1188 2SB


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PDF 2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB873 2SC4341 2SB921 2sb 989 2SB941 2SA1120 2SB1085B 2SB1416
en220

Abstract: DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
Text: 2SB1188 2 sa 1664 2SB1119 2SA1204 2SB798 2SB1002 2SB956 2SA1364 2SB1132 2sa 1665 □ -a 2SB816


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PDF 2sb1203 2SA1244 2SB933 2SB1204 2SB952 2SB945 2SB1294 2SB1018 2SB946 2SA145Z en220 DTA143ES 2SA1441 2sa 1659 1658 NEC RT1P431S 2SA1659 2sa1265n 2SB1371 2SB1188
2003 - 2SC2884

Abstract: 2SA1204
Text: 2SC2884 NPN (PCT) 2SC2884 : mm · : hFE = 100~320 · 1 W · IC · , 1.0~2.0 W · 2SA1204 (Ta = 25°C) VCBO 35 V VCEO 30 V VEBO 5 V IC 800 mA IB 160 mA PC 500 PC ( 1) 1000 mW Tj 150 °C Tstg -55~150 °C JEDEC JEITA SC-62 2-5K1A


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PDF 2SC2884 2SA1204 SC-62 2SC2884 2SA1204
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