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Renesas Electronics Corporation
2SA1190DTZ-E - Bulk (Alt: 2SA1190DTZ-E) 2SA1190DTZ-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SA1190DTZ-E Bulk 0 1 Weeks 2,273 - - - - $0.15172 More Info
Rochester Electronics 2SA1190DTZ-E 120,000 1 $0.18 $0.18 $0.16 $0.15 $0.15 More Info

2SA1190 datasheet (20)

Part ECAD Model Manufacturer Description Type PDF
2SA1190 2SA1190 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SA1190 2SA1190 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SA1190 2SA1190 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1190 2SA1190 ECAD Model Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
2SA1190 2SA1190 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1190 2SA1190 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1190 2SA1190 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1190 2SA1190 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1190 2SA1190 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1190 2SA1190 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1190 2SA1190 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1190 2SA1190 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1190 2SA1190 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1190 2SA1190 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1190D 2SA1190D ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 90V 0.1A 3TO-92 (1) Original PDF
2SA1190D 2SA1190D ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1190DTZ-E 2SA1190DTZ-E ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1190E 2SA1190E ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 90V 0.1A 3TO-92 (1) Original PDF
2SA1190E 2SA1190E ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1190ETZ-E 2SA1190ETZ-E ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF

2SA1190 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - Hitachi DSA0076

Abstract: 2SA1190 2SA1191 2SC2855 2SC2856
Text: 2SA1190 , 2SA1191 Silicon PNP Epitaxial ADE-208-1012 (Z) 1st. Edition Mar. 2001 Application , -92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190 , 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage VCBO ­90 , 150 150 °C Storage temperature Tstg ­55 to +150 ­55 to +150 °C 2 2SA1190 , 2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 2SA1191 Item Symbol Min Typ Max


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PDF 2SA1190, 2SA1191 ADE-208-1012 2SC2855 2SC2856 2SA1190 Hitachi DSA0076 2SA1190 2SA1191 2SC2856
1999 - 2SA1191

Abstract: 2SA1190 2SC2855 2SC2856 Hitachi DSA00493
Text: 2SA1190 , 2SA1191 Silicon PNP Epitaxial Application · Low frequency low noise amplifier · Complementary pair with 2SC2855 and 2SC2856 Outline 2SA1190 , 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage VCBO ­90 ­120 V , temperature Tstg ­55 to +150 ­55 to +150 °C 2 2SA1190 , 2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 2SA1191 Item Symbol Min Typ Max Min Collector to base


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PDF 2SA1190, 2SA1191 2SC2855 2SC2856 2SA1190 2SA1191 2SA1190 2SC2856 Hitachi DSA00493
2005 - Not Available

Abstract: No abstract text available
Text: Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1190DTZ-E 2SA1190ETZ-E , 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug , Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 2SA1190 Electrical , Cob NF Min ­90 ­90 ­5 - - 250 - - - - - 2SA1190 Typ Max - - - - - - - ­0.1 - ­0.1 - , - 0.7 - nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2


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PDF 2SA1190 REJ03G0640-0200 ADE-208-1012) 2SC2855 2SC2856 PRSS0003DA-A
2000 - 2SC2856

Abstract: 2SA1190 2SA1191 2SC2855
Text: products contained therein. 2SA1190 , 2SA1191 Silicon PNP Epitaxial ADE-208-1012 (Z) 1st. Edition , 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190 , 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1190 2SA1191 Unit Collector to base , 2SA1190 , 2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 2SA1191 Item Symbol Min , mA*2 Notes: 1. The 2SA1190 and 2SA1191 are grouped by h FE as follows. 2. Pulse test D E


Original
PDF
2005 - Not Available

Abstract: No abstract text available
Text: Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1190DTZ-E 2SA1190ETZ-E , 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug , Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 2SA1190 Electrical , Cob NF Min ­90 ­90 ­5 - - 250 - - - - - 2SA1190 Typ Max - - - - - - - ­0.1 - ­0.1 - , - 0.7 - nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2


Original
PDF 2SA1190 REJ03G0640-0200 ADE-208-1012) 2SC2855 2SC2856 PRSS0003DA-A
Not Available

Abstract: No abstract text available
Text: 2SA1190 ,2SA1191 Silicon PNP Epitaxial HITACHI Application · · Low frequency low noise am , . Collector 3. Base 2 V* 1 144 2SA1190 ,2SA1191 Absolute Maximum Ratings (Ta = 25 °C) Item , Pc 2SA1190 -9 0 -9 0 -5 2SA1191 -120 -120 -5 -100 100 400 150 -5 5 to +150 Unit V V V -100 100 400 150 -5 5 to +150 mA mA mW °C °C Tj Tstg HITACHI 145 2SA1190 ,2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter


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PDF 2SA1190 2SA1191 2SC2855 2SC2856 2SA1191
1999 - 2SA1190

Abstract: 2SA1191 2SC2855 2SC2856 Hitachi DSA00335
Text: 2SA1190 , 2SA1191 Silicon PNP Epitaxial Application · Low frequency low noise amplifier · , 1 2SA1190 , 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1190 2SA1191 , ­55 to +150 ­55 to +150 °C 2 2SA1190 , 2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 2SA1191 Item Symbol Min Typ Max Min Collector to base breakdown voltage , , I C = ­2 mA*2 I C = ­10 mA, I B = ­1 mA*2 Notes: 1. The 2SA1190 and 2SA1191 are grouped by h FE


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PDF 2SA1190, 2SA1191 2SC2855 2SC2856 2SA1190 2SA1190 2SA1191 2SC2856 Hitachi DSA00335
2005 - 2SA1190

Abstract: 2SA1190DTZ-E 2SA1190ETZ-E 2SA1191 2SC2855 2SC2856 PRSS0003DA-A SC-43A
Text: 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1190DTZ-E 2SA1190ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades , 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug , ­55 to +150 °C °C 2SA1190 Electrical Characteristics (Ta = 25°C) 2SA1190 Typ Max - , referred to input en Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2. Pulse test


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PDF 2SA1190 REJ03G0640-0200 ADE-208-1012) 2SC2855 2SC2856 PRSS0003DA-A 2SA1190 2SA1190DTZ-E 2SA1190ETZ-E 2SA1191 2SC2856 PRSS0003DA-A SC-43A
2sa119

Abstract: 2SA1190 2SA1191
Text: HITACHI 2SA1190 , 2SA1191 S U D O N P K P r p n /v jis fiL LOW FFIEQUEWCy LOW NUISE AMPL IÉIÇH Oiirnplsmsrtsry J » r v.í)h i ÖCEijns. ¡irvi KSt2EE¡fr I I V"if i . ll.Tnii i r " - , H-HOi HITACHI 2SA1190 , 2SA1191 TYPICAL OUTPUT CHARACTERISTICS (1) TYPICAL OUTPUT CHARACTERISTICS , ) HITACHI 2SA1190 ,2SA1191 COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS, BASE TO EMITTER RESISTANCE DC , lle c to r to base v o lta g e V c b 2SA1190 ,2SA1191 NOISE VOLTAGE REFFERED TO


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PDF 2SA1190, 2SA1191 2SA1190 2sa119 2SA1191
2005 - Not Available

Abstract: No abstract text available
Text: ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1190DTZ-E 2SA1190ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades , developed or manufactured by or for Renesas Electronics. 2SA1190 Silicon PNP Epitaxial REJ03G0640 , €“100 100 400 150 –55 to +150 Unit V V V mA mA mW ° C ° C 2SA1190 Electrical Characteristics (Ta = 25°C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter breakdown


Original
PDF
2005 - 2SA1190

Abstract: 2SA1190DTZ-E 2SA1190ETZ-E 2SA1191 2SC2855 2SC2856 PRSS0003DA-A SC-43A
Text: 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1190DTZ-E 2SA1190ETZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades , . 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug , ­55 to +150 °C °C 2SA1190 Electrical Characteristics (Ta = 25°C) 2SA1190 Typ Max - , referred to input en Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2. Pulse test


Original
PDF
Not Available

Abstract: No abstract text available
Text: H ITACH I 2SA1190 , 2SA1191 S LI CON PNP EP|-A>iAt LOW FREQtJENt-r LOWNQiSg AMPUHgH Gointyi«fA6r*ary w vrfh 3SC8BSS ara $80385$ Jm r B * tk > i / i ¿i.» «; Î C -il«rw r S . fe S iM v'tw iitM i vi rtmt ÍJÍO EC TO-92Í ASSOLUTE MAXIMUM ftA ÏW G S {t*-:s 'X 1 !*eis » ·, I r , É Í£ r*-V ! D '* · . *.i- ; k : ·« « .* » t HITACH I 2SA1190 , 2SA1191 , voltage V ia (V) H ITACH I 2SA1190 , 2SAX191 COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. BASE TO


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PDF 2SA1190, 2SA1191
2SA1161

Abstract: TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1156 2SA1209 SA1162
Text: -120 -0.1 0.4 0.1 -70 250 800 -12 -0. 002 -0.15 -1 -0.01 -0.001 2SA1190 H2 LF LN A -90 -90 -0.1 0.4 , f=lKHz/Rg=10k 2SC2855 TO-92® ECB 2SA1190 130* -6 -0.01 3.2* NF max 1.5dB f=lKHz/Rg=10k 2SC2856 T0


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PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1209
2SD1354

Abstract: 2sD1413 2SC2987A 2sc3181 2SD1266 2SD1196 2SD1190 2sd1176 2SD1047 TOSHIBA 2SD970
Text: 2SÜ1190 2SD1413 2SD 1324 fé T 2SD1191 2SD1417 2SD 1325 / fé T 2SC3144 2SD1413 2SD1521


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PDF 2SD1196 2SD1357 2SD970CK) 2SD1634 2SD2025 2SD970 2SD1354 2sD1413 2SC2987A 2sc3181 2SD1266 2SD1190 2sd1176 2SD1047 TOSHIBA
2SA817A

Abstract: 2SA934 2SB774 2SA1740 UN4112 DTA124ES ANIF4M 2sa1306 2SA1807 2SA999
Text: 2SA1339 2SA1150 2SB1030 2SA854S 2SA 1391 S H s* 2SA817A 2SA1190 2SA1127 2SA933 2SA 1392 ^ H Â


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PDF 2SA1740 2SB1203 2SA1244 1385Z 2SA1244Ã 2SB817 2SA1302 2SB1163 2SA817A 2SA934 2SB774 2SA1740 UN4112 DTA124ES ANIF4M 2sa1306 2SA1807 2SA999
2SA1188

Abstract: 2SA1189 2SA1190 2SA1191 2SC2853 2SC2854
Text: curves of 2SA1190 and 2SA1191.


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PDF 2SA1188, 2SA1189 2SC2853 2SC2854 2SA1188 2SA1I89 -10mA, 2SA1190 2SA1191. 2SA1189 2SA1191 2SC2854
1999 - 2SC2856

Abstract: 2SA1190 2SA1191 2SC2855 Hitachi DSA00493
Text: 2SC2855, 2SC2856 Silicon NPN Epitaxial Application · Low frequency low noise amplifier · Complementary pair with 2SA1190 and 2SA1191 Outline 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC2855 2SC2856 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE ­100 ­100 mA Collector


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PDF 2SC2855, 2SC2856 2SA1190 2SA1191 2SC2855 2SC2856 2SA1191 2SC2855 Hitachi DSA00493
2SA1188

Abstract: No abstract text available
Text: 1 See characteristic curves of 2SA1190 and 25A1191.


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PDF 2SA1188, 2SA1189 2SC2853 2SC2854 2SA1190 25A1191. 2SA1188
1999 - Hitachi DSA002754

Abstract: No abstract text available
Text: 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 3 2SA1188


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PDF 2SA1188, 2SA1189 2SC2853 2SC2854 2SA1188 2SA1188 Hitachi DSA002754
1999 - 2SA1189

Abstract: Hitachi DSA0097 2SA1188 2SA1190 2SA1191 2SC2853 2SC2854
Text: 800 See characteristic curves of 2SA1190 and 2SA1191. 2 VCE = ­12 V, I C = ­2 mA*2 I C =


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PDF 2SA1188, 2SA1189 2SC2853 2SC2854 2SA1188 2SA1189 Hitachi DSA0097 2SA1188 2SA1190 2SA1191 2SC2854
2SA1108A

Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
Text: -5 2SA1188 2SA1189 2SA1190 2SA1191 2SA1193 2SA1194 -90 -120 -90 -120 -60 -60 -5


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PDF 2SA1102 2SA1103 2SA1104 2SA1105 2SA1106 2SA1107 2SA1107A 2SA1108 2SA1108A 2SC2853 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
2000 - 2SA1188

Abstract: 2SA1189 2SA1190 2SA1191 DSA003636 Hitachi 2SA
Text: characteristic curves of 2SA1190 and 2SA1191. 2 VCE = ­12 V, I C = ­2 mA*2 I C = ­10 mA, I B = ­1 mA*2


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PDF 2SA1188 ADE-208-1011A 2SA1189 2SA1188 2SA1189 2SA1190 2SA1191 DSA003636 Hitachi 2SA
Not Available

Abstract: No abstract text available
Text: 2SC2855,2SC2856 Silicon NPN Epitaxial HITACHI Application · Low frequency low noise amplifier · Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) f l III 1 1. Emitter 2. Collector 3. Base 3 2 u 1 455 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature e Symbol ^CBO 2SC2855


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PDF 2SC2855 2SC2856 2SA1190 2SA1191 2SC2855, 2SC28S6
SA1213

Abstract: 2SC2852 2SC2888 ka bs 89 2SC2885 2SC2840 2SC2839 2SC2834A 2SC2834 2SC2886
Text: 0.01 3* NF MAX 1. 5dB f=lKHz/Bg=10K 2SA1190 TO-92J5 ECB 2SC2855 310* 6 0.01 3* NF MAX 1. 5dB


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PDF 2SC2834 2SC2834A 2SC2837 2SC2839 2SC2840 2SC2841 2SC2845 2SC2847 2SC2873 2SC2878 SA1213 2SC2852 2SC2888 ka bs 89 2SC2885 2SC2840 2SC2834A 2SC2886
2sc458lg

Abstract: 2SA1755 2SB646A 2SC4366 2SC2610 2sd666a 2SC2545, 2SC2546 2SC2547 2SC4648 2SC3521 2sc2547 transistor
Text: SMALL iG eneral amplifier Package Type No. code SPAK 2SA1337 2SA1350 2SA1374 2SA1390 2SC3390 2SC3413 2SC3470 2SC3553 2SC3836 2SD1504 T O -92 2SA673 2SA673A 2SA836 2SA844 2SA872 2SA872A 2SA893 2SA893A 2SA1Q25 2SA1029 2SA1030 2SA1031 2SA1032 2SA1081 2SA1082 2SA1083 2SA1084 2SA1085 2SA1188 2SA1189 2SA1190 2SA1191 2SA1485 2SA1779 2SB561 2SB105S 2SB1059 2SB1348 2SB1349 2SC458 2SC458LG 2SC1213 2SC1213A 2SC1214 2SC1344 2SC1345 2SC1775 2SC1775A 2SC1890 2SC1890A 2SC2308 2SC2309 2SC2310 2SC2396 2SC2543 2SC2544 2SC2545


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PDF 2SA1337 2SA1350 2SA1374 2SA1390 2SC3390 2SC3413 2SC3470 2SC3553 2SC3836 2SD1504 2sc458lg 2SA1755 2SB646A 2SC4366 2SC2610 2sd666a 2SC2545, 2SC2546 2SC2547 2SC4648 2SC3521 2sc2547 transistor
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