The Datasheet Archive

2SA1175 datasheet (19)

Part ECAD Model Manufacturer Description Type PDF
2SA1175 2SA1175 ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SA1175 2SA1175 ECAD Model NEC Semiconductor Selection Guide Original PDF
2SA1175 2SA1175 ECAD Model Various Russian Datasheets Transistor Original PDF
2SA1175 2SA1175 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1175 2SA1175 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1175 2SA1175 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1175 2SA1175 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1175 2SA1175 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1175 2SA1175 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1175 2SA1175 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1175 2SA1175 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1175 2SA1175 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1175 2SA1175 ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175EF 2SA1175EF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175FF 2SA1175FF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175HF 2SA1175HF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175JF 2SA1175JF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175KF 2SA1175KF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF
2SA1175RF 2SA1175RF ECAD Model NEC TRANS GP BJT 50V 0.1A 3SST Scan PDF

2SA1175 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1175

Abstract: transistor 2sa1175
Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit , : 07/12/2002 ST 2SA1175 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit


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PDF 2SA1175 100mA, 100Hz 2SA1175 transistor 2sa1175
NEC 1357

Abstract: 2sa1175 2SB710 K 1358 2SA937 2SA914 2SA1091 2SA953 2SA1309A 2sa1361
Text: 2SB1115 2SB624 2SB736 2SA1175 2SB805 2SB1115 2SA1376 2SB1Ì10 2SB956 2SB766 2SB710 2SB710 2SA1309A , M ! il 2SA953 2SA1175 2SA1309A 2SA112 3 2SA1123 2SA733 2SB810 2SA1413 2SA1309A 2SB1030


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PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 K 1358 2SA937 2SA1091 2SA953 2sa1361
2SA1115

Abstract: 2SA1115 E DTA124EK 2SA1175 RT1P141C 2SA1334 2SA1323 2SA1318 2SA1018 2SA1309A
Text: 2SA1174 2SB1068 2SA1175 2SB736 2SA953 RN2404 RN2403 RN2402 RN2204 RN22Q3 2SA1468 2SB792 2SB709 , RN2202 uPA75HA 2SA1782 2SA1048 2SA1175 UN4111 2SA1309A s E tL B


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PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK 2SA1175 RT1P141C 2SA1334 2SA1323 2SA1318
TRANSISTOR 2SA1175

Abstract: 2sa1175 2SC2785 M
Text: NEC ELECTRON DEVICE D ESCR IPTIO N PNP SILICON TRANSISTOR 2SA1175 The 2SA1175 is designed fo r use in driver stage o f A F am plifier. PAC K A G E DIM EN SIO N S in m illim e te rs FE A TU R E S · High hpg and excellent lin earity hpE d c = _ 1.0 m A ) : 200 TYP. · C om plem , 2SA1175 NEC EliCTRON OEVICE T Y P IC A L C H A R A C TE R IS TIC S (Ta * 25 °C unless otherwise , 2SA1175 N O R M A L IZ E D h -P A R A M E T E R S vs. E M I T T E R C U R R E N T N O R M A L I Z E


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PDF 2SA1175 2SA1175 2SC2785 TRANSISTOR 2SA1175 2SC2785 M
2SA1175

Abstract: No abstract text available
Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit , Code: 724) Dated : 07/12/2002 ST 2SA1175 Characteristics at Tamb=25 oC Symbol Min. Typ


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PDF 2SA1175 100mA, 100Hz 2SA1175
D1351

Abstract: 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
Text: 5> • 5 Silicon Transistor 2SA1175 PNU =1 4$ ft 02SC2785i: n pi V Vto (ta= 25 *c) * § Bfc # XL * * ft n <7 £ • - * |SJ * E VcQO -60 V ^ ^ • i 5 5» ^Btff VCEO -50 V VEBO -5.0 , . REVERSE VOLTAGE -1.0 -2.0 -5.0 -10 -20 -50 -100 □ U ? * . /<- *UJ«JŒ Ve* (V) 2 2SA1175 1000 500 , Ie (mA) 3 NEC 2SA1175 4 g I te NORMALIZED h PARAMETER vs. EMITTER CURRENT 100 50 Vce = -6.0 , -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50-100 □ L- ? • X 5 v * IMJŒ Vce (V) 4 2SA1175 ID h- < â


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PDF 2SA1175 02SC2785i: D1351 2SA1175 TRANSISTOR 2SA1175 2SA11 2sa1175 transistor
2SA1175

Abstract: hfe 300 pin configuration transistor 2sa1175 TRANSISTOR K 135
Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit , : 07/12/2002 ST 2SA1175 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit


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PDF 2SA1175 100mA, 100Hz 2SA1175 hfe 300 pin configuration transistor 2sa1175 TRANSISTOR K 135
2SA1175

Abstract: 2SA1175 pnp TRANSISTOR 2SA1175 2sa1175 transistor
Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit , , Stock Code: 724) R Dated : 07/12/2002 ST 2SA1175 Characteristics at Tamb=25 oC Symbol Min


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PDF 2SA1175 100mA, 100Hz 2SA1175 2SA1175 pnp TRANSISTOR 2SA1175 2sa1175 transistor
2SA1175

Abstract: TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR
Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA1175 The 2S A 1 175 is designed for use in driver stage of A F amplifier. PAC KAG E D IM E N S IO N S in millimeters (inches) 2.2 M AX. (0.086 M AX.) 4.2 M AX. (0.165 M AX.) FEATURES · High hpE and excellent linearity hpE (lc - 1.0 rnA , , 1q = -1 .0 mA 139 2SA1175 NEC T Y P IC A L C H A R A C T E R IS T IC S (Ta = 25 °C , E V E R S E V O L T A G E lç - Collector Current -mA 140 NEC 2SA1175 N O R M A L


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PDF 2SA1175 10kH7 2SA1175 TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR
2SA1015

Abstract: 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
Text: –¡ —A 2SA1783 2SA1015 2SA1175 2SB1376 2SA 1548 , □ —A 2SB1296 2SA562TM 2SB1377 2SA 1549 , 1561 V O—A 2SA1782 2SA1015 2SA1175 2SB1320A 2 SA1115 2SA 1562 • 2SA1243 2SB1407 2SA1096


OCR Scan
PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
sa1306

Abstract: 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
Text: 2SA124Z 2SB933 2SB 1206 fé T 2SA1782 2SA1175 2SB1350 2SB774 2SA933S 2S8 1207 fé T 2SA1753


OCR Scan
PDF 2SA1606 SA1306 SA1606 2SA1306 2SB940A 2SB1015 2SB941 2SB1370 2SBU23 2SA1203 sa1306 2SB793 2SB1186B 2sb1370 2SA1306 2SA1306A 2SB1085B 2SA1770 2SA1175 2SB1212
1998 - 2SA1175

Abstract: 2SC403 CXL5005M CXL5005P 3 phase generator sine
Text: -p sine wave SW1 V5 FEED NC a. 250kHz, 1.28Vp-p sine wave 0.1µF OUT V6 2SA1175 , Application Circuit 9V 5600 0.1µF 0.01µF 0.1µF 0.1µF L. P. F 2SA1175 Composite video


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PDF CXL5005M/P CXL5005M/P CXL5005M CXL5005P 14-pin 28Vp-p, 200mVp-p 680-bit OP-14P-L01 OP014-P-0300 2SA1175 2SC403 CXL5005M CXL5005P 3 phase generator sine
2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2SA1162 2s8817 2SB1198K 2SA1638 2sa1175 2SA1018
Text: £ 2SA1782 2SA1048 2SA1175 2SA1337 2SA1309A 2SA933S 2SA 1631 a a 2SB816 2SA1265N 2SB1373 2SA 1632 a


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PDF 2SA1772 2SA1641 2SB936 RN2206 UN4116 2SA1781 2SA1162 2SA812 2SA1022 2SA1622 2SA1699 2sa1015 2SA1586 2s8817 2SB1198K 2SA1638 2sa1175 2SA1018
2SB817

Abstract: 2sa1115 2SA992 2sa1015 2sa1302 2SA1782 2SA847A 2SA1123 2SA1142 sanyo 1042
Text: - 21 - SJ € Type No. tt « Manuf. = m SANYO 3E 2 TOSHIBA 0 a NEC B 4 HITACHI * ± a FUJITSU 2SA1175 2SA1374


OCR Scan
PDF 2SA1016K 2SA970 2SA992 2SA1123 2SA847A 2SA1016 2SB817 2sa1115 2SA992 2sa1015 2sa1302 2SA1782 2SA847A 2SA1142 sanyo 1042
1998 - 2SA1175

Abstract: 2SC403 CXL5005M CXL5005P SOP014-P-0300
Text: OUT V6 2SA1175 5600 V1 BPF Note 4) LPF 9V CLK fCLK = 3.58MHz VCLK = 300mVp , 0.1µF 0.1µF L. P. F 2SA1175 Composite video signal input 1H delay signal output Delay


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PDF CXL5005M/P CXL5005M/P CXL5005M CXL5005P 14-pin 28Vp-p, 200mVp-p 680-bit OP-14P-L01 OP014-P-0300 2SA1175 2SC403 CXL5005M CXL5005P SOP014-P-0300
2SA933S

Abstract: 2SB737 2sb1425 2SA1302 TOSHIBA 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
Text: 2SA1174 2SA811A 2SA8UA 2SB736 2SBU14 2SA1394 2SA1261 2SA1175 ~ 1 2SB1375 2SB1096 2SA1227A 2SB1096


OCR Scan
PDF 2SA1285 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289 2SA1208 2SA1770 2SA1145 2SA933S 2SB737 2sb1425 2SA1302 TOSHIBA 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
2SC2785

Abstract: transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123
Text: TO-92S Transistor (NPN) 1. EMITTER 2SC2785 TO-92S 2. COLLECTOR 123 3. BASE Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 0.1 0.25 150


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PDF O-92S 2SC2785 O-92S 2SA1175 100mA, 2SC2785 transistor 2sc2785 2SC2785 transistor TO92S transistor 2sa1175 KF 25 transistor transistor 123
B948A

Abstract: 2SA1284 2SA1757 2SA1444 2SB793 2SA1637 2SA1462 2sa1307 nec 1441 2SA1636
Text: 2SB947A 2SA 1453 * s 2SA1783 2SA1175 2SA1374 2SA1309A 2SA933S 2SA 1455K □ —A 2SA1257 2SA1163


OCR Scan
PDF RN20Q2 DTA114ES 2SA1669 2SA1245 2SA1768 2SB1473 2SA1284 2SB1130M 2SA1703 2SB793 B948A 2SA1757 2SA1444 2SA1637 2SA1462 2sa1307 nec 1441 2SA1636
1997 - 22 pin ccd

Abstract: 2SA1175 CXL1008M CXL1008P
Text: 11 18 12 17 P3 2SA1175 2k a b 9V 10µ 13 16 4.1M 10.7M Frequency , ) BPF Frequency Response 8 21 2SA1175 Note 1) LPF Frequency Response (Delay Time to 140ns , be used PNP: 2SA1175 510 510 SIGNAL INPUT Application circuits shown are typical


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PDF CXL1008M/P CXL1008M/P CXL1008M CXL1008P 105mW 359-bit, 20-bit OP-28P-L02 OP028-P-0375 42/COPPER 22 pin ccd 2SA1175 CXL1008M CXL1008P
2sa933

Abstract: 2SA934 2sa726 2sa999 2SA999L 2SA1005 2sb849 2SB1314 2SA1115 2SA715
Text: 2SA1175 2SA1122 2SA1309A 2SA1115 2SA933 2SA 730 X fö T 2SB698 2SA952 2SA673 2SA719 2SA934 2SA 731


OCR Scan
PDF 2SA1768 2SA830 2SB849 2SB946 2SB1142 2SA473 2SB772 2SA699 2SB1314 2SB1009 2sa933 2SA934 2sa726 2sa999 2SA999L 2SA1005 2sb849 2SA1115 2SA715
1998 - 2SC403

Abstract: 16PIN 2SA1175 CXL5509M CXL5509P 906B
Text: 6 12 120 0.1µ 5 Transistor used PNP: 2SA1175 1k 510 1k 510 30p 1k Delay time 170ns LPF Transistor used PNP: 2SA1175 8 9 30p 1k 2.2k 5V 2.2k


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PDF CXL5509M/P CXL5509M/P CXL5509M 130mW CXL5509P OP-16P-L01 OP016-P-0300 16PIN DIP-16P-01 2SC403 2SA1175 CXL5509M CXL5509P 906B
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR (NPN) TO-92S FEATURES High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5


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PDF O-92S 2SC2785 O-92S 2SA1175 100mA,
2006 - 2sC2785

Abstract: 2SA1175 TRANSISTOR 2SA1175 2SC2785 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC2785 TRANSISTOR (NPN) TO-92S FEATURES High voltage Excellent hFE Linearity Complementary to 2SA1175 PNP transistor 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current


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PDF O-92S 2SC2785 O-92S 2SA1175 100mA, 2sC2785 TRANSISTOR 2SA1175 2SC2785 transistor
1997 - B1023

Abstract: B1024 e9543 ILX522K E95436-PP
Text: NC VDD1 RS 74HC04 2 RS 1 VOUT-R/B VOUT-G 2SA1175 4 NC 6 VDD1 , for any infringement of third party patent and other right due to same. 2SA1175 3 74HC04


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PDF ILX522K ILX522K 2048Pixels) 22pin 400mil) B1023 B1024 e9543 E95436-PP
2SD1557

Abstract: 2SA1152 2SC4333 2SB1581 high hfe transistor 2SC4063 nec 2SB1099 2sB1099 transistor high hfe darlington transistor sc70 transistor
Text: 2SA1175 2SC2785 2SC3623* BA1[ ] BN1[ ] BA2[ ] BN2[ ] ~100 m ~700 m ~120 2SB810 2SD1020 , 2SC2787 2SC4179 2SC1009A Audio Frequency Amplification 2SA733 2SA1175 2SA1611 2SA812


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PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 2SB1581 high hfe transistor 2SC4063 nec 2SB1099 2sB1099 transistor high hfe darlington transistor sc70 transistor
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