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Toshiba America Electronic Components
2SA1163-GR,LF Trans GP BJT PNP 120V 0.1A 3-Pin TO-236 - Tape and Reel (Alt: 2SA1163-GR,LF) 2SA1163-GR,LF ECAD Model
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Toshiba America Electronic Components
2SA1163-BL,LF Trans GP BJT PNP 120V 0.1A 3-Pin SC-59 - Tape and Reel (Alt: 2SA1163-BL,LF) 2SA1163-BL,LF ECAD Model
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Avnet Americas 2SA1163-BL,LF 0 12 Weeks 3,000 - - - - $0.0354 Buy Now
Toshiba America Electronic Components
2SA1163GRTE85L,F Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 2SA1163-GR(TE85L,F) 2SA1163GRTE85L,F ECAD Model
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2SA1163GRTE85L,F 0 16 Weeks 3,000 - - - - - Get Quote
Toshiba America Electronic Components
2SA1163-GR(TE85L,F In a Pack of 50, Toshiba 2SA1163-GR(TE85L,F PNP Transistor, 100 mA, 120 V, 3-Pin SOT-346, PK 2SA1163-GR(TE85L,F ECAD Model
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RS Components 2SA1163-GR(TE85L,F Package 300 50 - - $0.164 $0.098 $0.094 Buy Now
Chip1Stop 2SA1163-GR(TE85L,F Cut Tape 5,265 25 - - $0.117 $0.1 $0.0956 Buy Now
Toshiba America Electronic Components
2SA1163-BL,LF(T GP BJT 2SA1163-BL,LF(T ECAD Model
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Chip1Stop 2SA1163-BL,LF(T Cut Tape 2,950 25 - - $0.101 $0.0747 $0.0708 Buy Now
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Toshiba America Electronic Components
2SA1163-GR,LF(T Transistor Silicon PNP Epitaxil Type (Pct Process) 2SA1163-GR,LF(T ECAD Model
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Chip1Stop 2SA1163-GR,LF(T Cut Tape 2,475 25 - - $0.101 $0.0747 $0.0708 Buy Now
Toshiba America Electronic Components
2SA1163-GR,LF(B GP BJT 2SA1163-GR,LF(B ECAD Model
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Chip1Stop 2SA1163-GR,LF(B Cut Tape 2,825 25 - - $0.114 $0.048 $0.0479 Buy Now

2SA1163 datasheet (32)

Part ECAD Model Manufacturer Description Type PDF
2SA1163 2SA1163 ECAD Model Kexin Audio Frequency General Purpose Amplifier Applications Original PDF
2SA1163 2SA1163 ECAD Model Toshiba Japanese - Transistors Original PDF
2SA1163 2SA1163 ECAD Model TY Semiconductor Audio Frequency General Purpose Amplifier Applications - SOT-23 Original PDF
2SA1163 2SA1163 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1163 2SA1163 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1163 2SA1163 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1163 2SA1163 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1163 2SA1163 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1163 2SA1163 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1163 2SA1163 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1163 2SA1163 ECAD Model Toshiba TRANS GP BJT PNP 120V 0.1A 3(2-3F1A) Scan PDF
2SA1163 2SA1163 ECAD Model Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS) Scan PDF
2SA1163 2SA1163 ECAD Model Toshiba PNP transistor Scan PDF
2SA1163 2SA1163 ECAD Model Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
2SA1163 2SA1163 ECAD Model Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
2SA1163-BL 2SA1163-BL ECAD Model Toshiba 2SA1163 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1163BL 2SA1163BL ECAD Model Toshiba TRANS GP BJT PNP 120V 0.1A 3(2-3F1A) Scan PDF
2SA1163-BL,LF 2SA1163-BL,LF ECAD Model Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 120V 0.1A S-MINI Original PDF
2SA1163-BL(TE85L 2SA1163-BL(TE85L ECAD Model Toshiba 2SA1163 - Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R Original PDF
2SA1163BLTE85L 2SA1163BLTE85L ECAD Model Toshiba 2SA1163 - TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF

2SA1163 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Unit: mm Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 â , Marking 1 2003-03-27 2SA1163 2 2003-03-27 2SA1163 3 2003-03-27 2SA1163


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PDF 2SA1163 2SC2713
2003 - 2SA1163

Abstract: 2Sc2713
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications · High voltage: VCEO = -120 V · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700 · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to 2SC2713 · Small package Maximum , 2003-03-27 2SA1163 2 2003-03-27 2SA1163 3 2003-03-27 2SA1163 RESTRICTIONS ON


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PDF 2SA1163 2SC2713 2SA1163 2Sc2713
2007 - 2SA1163

Abstract: 2SC2713
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications · · · · · · Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low , classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbol Marking 1 2007-11-01 2SA1163 2 2007-11-01 2SA1163 3 2007-11-01 2SA1163 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1163 2SC2713 2SA1163 2SC2713
2SA1163

Abstract: 2SC2713 25C312
Text: 2SA1163 PNP (PCT) 2SA1163 : mm · · : VCEO = -120 V · : hFE , : (//) ( / ) () () 1 2007-11-01 2SA1163 (Ta = 25 , hFE GR (G): 200~400, BL (L): 350~700 ( ) hFE CG 2 2007-11-01 2SA1163 IC ­ , -30 (mA) 3 2007-11-01 2SA1163 h ­ VCE NF ­ RG, IC 1000 100 k 500 , 50 75 4 100 Ta 125 150 175 (°C) 2007-11-01 2SA1163 · ·


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PDF 2SA1163 2SC2713 O-236MOD SC-59 2SA1163 2SC2713 25C312
2009 - 2SA1163

Abstract: 2SC2713
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications · · · · · · Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low , (G): 200~400, BL (L): 350~700 ( ) marking symbol Marking 1 2007-11-01 2SA1163 2 2007-11-01 2SA1163 3 2007-11-01 2SA1163 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation


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PDF 2SA1163 2SC2713 2SA1163 2SC2713
2SA1163

Abstract: 2SC2713 A1163
Text: TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1163 2SA1163 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. U nit in mm + 0 .5 2 . 5 - 0 .3 High Voltage : V q e o = -120V Excellent h p g Linearity : hpE GC = -0.1mA) / hpE dC = -2mA) = 0.95 , This Material Copyrighted By Its Respective Manufacturer TO SH IB A 2SA1163 IC - V cE , TO SH IB A 2SA1163 h PARAMETER - V c E -1 -3 -1 0 -3 0 V cE (V) -1 0 0 C O


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PDF 2SA1163 --120V 2SC2713 2SA1163 A1163
2SA1163

Abstract: 2SC2713 A1163
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1163 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1163 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm + 0.5 2.5 - 0.3 High Voltage : V^EO - _ 120V Excellent hFF Linearity : hFE (Ic = -0.1m A) / hFE (Ic = -2m A ) = 0.95 (Typ.) High hFF . , H O cn z > S cr O o < o NJ TO SH IBA 2SA1163 h PARAMETER - VßE -1 -3 , COLLEECTOR CURRENT Iq (jj A ) 3 2001 05-31 - TO SH IBA 2SA1163 RESTRICTIONS ON PRODUCT


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PDF 2SA1163 2SC2713 2SA1163 A1163
2014 - Not Available

Abstract: No abstract text available
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = , production 1982-12 1 2014-03-01 2SA1163 2 2014-03-01 2SA1163 3 2014-03-01 2SA1163 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SA1163 2SC2713
Not Available

Abstract: No abstract text available
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • • • • • • Unit: mm High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = , classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbol Marking 1 2007-11-01 2SA1163 2 2007-11-01 2SA1163 3 2007-11-01 2SA1163 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation


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PDF 2SA1163 2SC2713
2SA1163

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1163 2SA1163 Unit in mm 3 .5 - a s AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o -_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.) TT i rrVi Vi n , TOSHIBA 2SA1163 IC - VCE IC - v b e BASE-EMITTER VOLTAGE V ßß (V) 5000 3000 , TOSHIBA h PARAMETER SIGNAL SOURCE RESISTANCE Rg (il) 2 I W G? o 2SA1163


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PDF 2SA1163 2SC2713 2SA1163
2SA1163

Abstract: 2SC2713 A1163 XL05
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1163 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2SA1163 Unit in mm + 0.5 2 .5 - 0 .3 High Voltage : Excellent High hpE Low Noise Small Package V^EO = - 120V Linearity : hFE (le = -0.1mA) / hFE (ÏC = , /3 TOSHIBA 2SA1163 IC - V C E ic - VRE hFE - IC 5000 3000 COMMON EMITTER VC E , 04-10 - 2/3 TOSHIBA 2SA1163 h PARAMETER - YßE 100k NF - Rg, IC 10k -1 -3


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PDF 2SA1163 2SC2713 2SA1163 2SC2713 A1163 XL05
Not Available

Abstract: No abstract text available
Text: 2SA1163 TO SHIBA 2 S A 1 1 63 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : V c e O= —120V Excellent hjrg Linearity : hpE OC = - 0.1mA) / hpE dC = -2mA) = 0.95 (Typ.) High hjrg , Handbook. 1997-04-10 1/3 2SA1163 TO SHIBA IC - V cE IC - V b e É»  , ¬ > g H 13 H S) < O H SIGNAL SOURCE RESISTANCE Rg (il) 2SA1163


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PDF 2SA1163 2SC2713
2SA1163

Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1163 Unit in mm + 0.25 1 .5 - C U 5 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : VQgQ = -120V Excellent hjrg Linearity : hpE (Ic= -0.1mA)/hFE (IC = -2mA) = 0.95 (Typ.) High hp~E ; hFE = 200~700 Low Noise : NF = ldB (Typ.), lOdB (Max.) Complementary to 2SC2713 Small Package MAXIMUM RATINGS (Ta = 25°C) öö +\ -EE- CHARACTERISTIC , UNIT M ma V MHz pF dB - MARKING 1.0 10 L Type Name hpg Rank 147 2SA1163


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PDF 2SA1163 --120V 2SC2713 O-236MOD SC-59 --10V, 2SA1163
2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Text: =1.5GHz fT=400MHz MIN fT=900MHz MIN fî=650MHz MIN fr=600MHz fr=4GHz fT=4<3Hz 2SA1162 2SC2712 2SA1163 , amplification *: Under development S L C D O R F Z 2SC2712 2SA1162 2SC2713 2SA1163 - - - 2SC2859


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PDF OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: 2SA1313 2SC2713 2SA1163 2SC3324 2SA1312 2SC5232 2SA1953 2SA1362 2SC3265 2SA1298 2SC4210 2SA1621 , 2SA1954 2SC5233 2SA1162 2SC2712 2SA1182 2SC2859 2SA1313 2SC3325 2SA1163 2SC2713 2SA1312


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PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
2SA1161

Abstract: TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1156 2SA1209 SA1162
Text: SA1162 SS LF LN A -50 -50 -0.15 0.15 -0.1 -50 70 400 -6 -0.002 -0.3 -0.1 -0. 01 2SA1163 LF LS A -120 , *) EBC 2SA1163 200* -12 -0.002 1. 6* (SC-59(MPAK) EBC 2SA1171 80* -10 -0.01 2. 5


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PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1209
2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Text: 6 10 5 6 6 10 , 6 10 6 6 5 10 1 2SA1163 ! j ! 2SA1182 2SA1255 2SA1298 -in o T) -3 O WJ


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PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426
2SA1163

Abstract: 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
Text: - 76 - Ü s Type No. a « Manuf. H # SANYO S S TOSHIBA B 8 NEC 0 iL HITACHI « ± a FUJITSU fô T MATSUSHITA H S MITSUBISHI □ — A ROHM 2 SB 1578 a m 2SB1575 2S6 1579 fâ T 2SA1825 2 SB 1580 □ -A 2SB1576 2 SB 1581 s m 2SA1896 2SA1736 2SB1574 2SB 1582 fë T 2SA1T53 2SAU82 2SA1121 2SA1366 2SB 1583 fò T 2SA1257 2SA1163 2SA1468 2SB 1584 fò T 2SA1753 2SA1182 2SB831 2SA1355 2SB 1585 fô T 2SA1753 2SA1182 2SB831 2SA1365 2SB 1586 yyry 2SB1555 2SB1400


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PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
2SC1815 2SA1015

Abstract: 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815 2SC1923
Text: -92 2SA1015 2SC2458 2SC2459 Mini 2SA1048 2SA1049 SOT-23MOD 2SC2712 2SC2713 2SC3324 2SA1162 2SA1163 2SA1312


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PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815
b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1705
Text: 2SB1361 2SB 813 , H m 2SA1012 2SB703 2SB858 2SB942 2SB1334 2SB 814 . fô T 2SA1257 2SA1163 2SA811A


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PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1705
2SA1163

Abstract: hFE CLASSIFICATION Marking
Text: Transistors SMD Type Silicon PNP Epitaxial Type 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low noise. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V


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PDF 2SA1163 OT-23 2SA1163 hFE CLASSIFICATION Marking
2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
Text: 2SB789 2SA1364 2SA 1484 * 2SA1257 2SA1163 2SB814 2SA1455K 2SA 1485 B iL 2SA1624 2SA1091 2SA1376A


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PDF 2SB698 2SA950 2SA1515 2SA1150 2SA1515S 2SA1298 2SB1197K 2SA1257 2SA1330 2SB792 2SA1441 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
Not Available

Abstract: No abstract text available
Text: Transistor IC Transistor Transistors DIP Type SMD Type SMDType Product specification 2SA1163 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High hFE. 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low noise. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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PDF 2SA1163 OT-23
B948A

Abstract: 2SA1284 2SA1757 2SA1444 2SB793 2SA1637 2SA1462 2sa1307 nec 1441 2SA1636
Text: 2SB947A 2SA 1453 * s 2SA1783 2SA1175 2SA1374 2SA1309A 2SA933S 2SA 1455K □ —A 2SA1257 2SA1163


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PDF RN20Q2 DTA114ES 2SA1669 2SA1245 2SA1768 2SB1473 2SA1284 2SB1130M 2SA1703 2SB793 B948A 2SA1757 2SA1444 2SA1637 2SA1462 2sa1307 nec 1441 2SA1636
2sa910

Abstract: UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
Text: 2SA1163 2SA970 2SA130 6 2SAU62 2SB962 2SA1424 2SA1424 2SA953 2SB649 2SB649 2SA812 2SA1096 2SB967


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PDF 2SB1123 2SA1302 2SB986 2SA1705 2SA1249 2SA1768 2SA1552 2SA1256 2SB817 2sa910 UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
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