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Toshiba America Electronic Components
2SA1162-OLF X34 PB-F S-MINI PLN (LF) TRANSISTOR PD=150MW F=80MHZ - Tape and Reel (Alt: 2SA1162-O,LF) 2SA1162-OLF ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SA1162-OLF Reel 0 12 Weeks 3,000 - - - - $0.0177 Buy Now
Toshiba America Electronic Components
2SA1162-Y,LF Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R - Tape and Reel (Alt: 2SA1162-Y,LF) 2SA1162-Y,LF ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SA1162-Y,LF Reel 0 12 Weeks 3,000 - - - - $0.0177 Buy Now
Toshiba America Electronic Components
2SA1162-GR,LF Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R - Tape and Reel (Alt: 2SA1162-GR,LF) 2SA1162-GR,LF ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SA1162-GR,LF Reel 0 12 Weeks 3,000 - - - - $0.0177 Buy Now
Toshiba America Electronic Components
2SA1162-GR,LF(T Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini (Alt: 2SA1162-GR,LF(T) 2SA1162-GR,LF(T ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SA1162-GR,LF(T 0 3,000 - - - - - Get Quote
RS Components 2SA1162-GR,LF(T Package 0 50 - - $0.075 $0.058 $0.056 Buy Now
Toshiba America Electronic Components
2SA1162GRTE85L,F Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R (Alt: 2SA1162-GR(TE85L,F) 2SA1162GRTE85L,F ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (3) 2SA1162GRTE85L,F Tape and Reel 0 12 Weeks, 2 Days 3,000 - - - - €0.0648 Buy Now
2SA1162GRTE85L,F Reel 0 16 Weeks 3,000 - - - - - Get Quote
2SA1162GRTE85L,F Tape and Reel 0 12 Weeks, 2 Days 1 €0.072 €0.0576 €0.036 €0.02592 €0.02592 Buy Now
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Toshiba America Electronic Components
2SA1162-Y(T5L,F,T) Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R - Tape and Reel (Alt: 2SA1162-YT5LFT) 2SA1162-Y(T5L,F,T) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SA1162-Y(T5L,F,T) Reel 0 3,000 - - - - - Get Quote
Toshiba America Electronic Components
2SA1162-Y(TE85L,F) Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R - Tape and Reel (Alt: 2SA1162-YTE85LF) 2SA1162-Y(TE85L,F) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (2) 2SA1162-Y(TE85L,F) Reel 0 16 Weeks 3,000 - - - - - Get Quote
2SA1162-Y(TE85L,F) Tape and Reel 0 12 Weeks, 2 Days 1 €0.06 €0.048 €0.03 €0.0216 €0.0216 Buy Now
ON Semiconductor
2SA1162GT1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon 2SA1162GT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics 2SA1162GT1 137,980 1 $0.03 $0.03 $0.03 $0.03 $0.03 Buy Now
ON Semiconductor
2SA1162YT1 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon 2SA1162YT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics 2SA1162YT1 168,000 1 $0.03 $0.03 $0.03 $0.03 $0.03 Buy Now
Toshiba America Electronic Components
2SA1162Y 2SA1162Y ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162Y 47,990 - - - - - Buy Now
Toshiba Corporation
2SA1162-Y 2SA1162-Y ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics (2) 2SA1162-Y 450 - - - - - Buy Now
2SA1162-Y 200 27 - - $0.0938 $0.0938 $0.0938 Buy Now
Toshiba America Electronic Components
2SA1162-Y 2SA1162-Y ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162-Y 72,000 27 - - $0.0938 $0.0562 $0.0281 Buy Now
Toshiba America Electronic Components
2SA1162-O(TE85LF) 2SA1162-O(TE85LF) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162-O(TE85LF) 1,699 - - - - - Buy Now
Toshiba America Electronic Components
2SA1162 GR 2SA1162 GR ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162 GR 36,000 - - - - - Buy Now
Toshiba Corporation
2SA1162-GR (T5L,M) 2SA1162-GR (T5L,M) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162-GR (T5L,M) 2,532 - - - - - Buy Now
Toshiba America Electronic Components
2SA1162Y(SY) 2SA1162Y(SY) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2SA1162Y(SY) 145 14 - - $0.1875 $0.1875 $0.1875 Buy Now
Toshiba America Electronic Components
2SA1162-GR(F) In a Pack of 10, Toshiba 2SA1162-GR(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346, PK 2SA1162-GR(F) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
RS Components 2SA1162-GR(F) Package 3,860 10 - $0.064 $0.064 $0.048 $0.035 Buy Now
Toshiba America Electronic Components
2SA1162-Y(F) In a Pack of 10, Toshiba 2SA1162-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346, PK 2SA1162-Y(F) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
RS Components 2SA1162-Y(F) Package 4,250 10 - $0.064 $0.064 $0.048 $0.035 Buy Now
Toshiba America Electronic Components
2SA1162-GR(TE85L,F Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SC59 2SA1162-GR(TE85L,F ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Transfer Multisort Elektronik 2SA1162-GR(TE85L,F 1,610 3,000 - $0.10832 $0.04758 $0.04276 $0.03991 Buy Now
Toshiba America Electronic Components
2SA1162GRSGTE85L 2SA1162GRSGTE85L ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. 2SA1162GRSGTE85L 3,850 - - - - - Get Quote
Toshiba America Electronic Components
2SA1162GRT5LT 2SA1162GRT5LT ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. 2SA1162GRT5LT 11,000 - - - - - Get Quote
Toshiba America Electronic Components
2SA1162YT5LM 2SA1162YT5LM ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. 2SA1162YT5LM 12,280 - - - - - Get Quote
Toshiba America Electronic Components
2SA1162YTE85L Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236 2SA1162YTE85L ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
ComS.I.T. 2SA1162YTE85L 3,435 - - - - - Get Quote
ISC
2SA1162 SOT23 2SA1162 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SA1162 5,000 - - - - - Get Quote

2SA1162 datasheet (65)

Part ECAD Model Manufacturer Description Type PDF
2SA1162 2SA1162 ECAD Model Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
2SA1162 2SA1162 ECAD Model Kexin Silicon PNP Epitaxial Type Transistor Original PDF
2SA1162 2SA1162 ECAD Model Toshiba Japanese - Transistors Original PDF
2SA1162 2SA1162 ECAD Model Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1162 2SA1162 ECAD Model TY Semiconductor Silicon PNP Epitaxial Type Transistor - SOT-23 Original PDF
2SA1162 2SA1162 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1162 2SA1162 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1162 2SA1162 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1162 2SA1162 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SA1162 2SA1162 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1162 2SA1162 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1162 2SA1162 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1162 2SA1162 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1162 2SA1162 ECAD Model Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Scan PDF
2SA1162 2SA1162 ECAD Model Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
2SA1162 2SA1162 ECAD Model Toshiba PNP transistor Scan PDF
2SA1162 2SA1162 ECAD Model Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
2SA1162 2SA1162 ECAD Model Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) Scan PDF
2SA1162-G 2SA1162-G ECAD Model Toshiba General Purpose Bipolar Transistor, PNP, 50V, SOT-23, 3-Pin Scan PDF
2SA1162-GR 2SA1162-GR ECAD Model Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF

2SA1162 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1162

Abstract: 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
Text: 2 D CLASSIFICATION OF hFE F Product-Rank 2SA1162-O 2SA1162-Y 2SA1162-GR , 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 A L 3 3 MECHANICAL DATA C , individually. Page 1 of 2 2SA1162 Elektronische Bauelemente -0.15A, -50V PNP Silicon General


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PDF 2SA1162 OT-23 2SC2712 OT-23, 2SA1162-O 2SA1162-Y 2SA1162-GR -100A, -100mA, -10mA 2SA1162 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
2SA1162

Abstract: 2SA1162 PNP 2SC2712
Text: 2SA1162 PNP (PCT) 2SA1162 : mm · · : IC = -150 mA () : VCEO = -50 V · · hFE : hFE = 70~400 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 () · , -59 2-3F1A : 0.012 g () °C : (//) ( / ) () () 1 2007-11-01 2SA1162 , 2007-11-01 2SA1162 IC ­ VCE IB ­ VBE -1000 -240 -500 -300 -2.0 VCE = -6 V (A , ) 2007-11-01 2SA1162 · · · · "" · · ·


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PDF 2SA1162 2SC2712 O-236MOD SC-59 2SA1162 2SA1162 PNP 2SC2712
2SA1162

Abstract: MARKING sg SOT23 MARKING SY SOT23 marking code SG transistor sg sot23 2SC2712 sy marking code sot23 sot23 marking SY SG SOT23 MARKING SY SOT23
Text: 2SA1162 Pb Low noise:NF=1dB(Typ),10dB(Max). Lead-free Commplementary to 2SC2712. Small , . Marking 2SA1162 Package Code SO/SY/SG SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise , Silicon Epitaxial Planar Transistor 2SA1162 Parameter Symbol Test conditions MIN , Silicon Epitaxial Planar Transistor 2SA1162 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise , Production specification Silicon Epitaxial Planar Transistor 2SA1162 PACKAGE OUTLINE Plastic


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PDF 2SA1162 2SC2712. OT-23 BL/SSSTC0092 2SA1162 MARKING sg SOT23 MARKING SY SOT23 marking code SG transistor sg sot23 2SC2712 sy marking code sot23 sot23 marking SY SG SOT23 MARKING SY SOT23
2008 - 2SA1162Y

Abstract: 2SA1162
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 SOT-23 A D C O


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162Y 2SA1162
2007 - 2SA1162

Abstract: No abstract text available
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications · · · · · · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2712 Small package Unit: mm , Marking 1 2007-11-01 2SA1162 2 2007-11-01 2SA1162 RESTRICTIONS ON PRODUCT USE ·


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PDF 2SA1162 2SC2712 2SA1162
2008 - Not Available

Abstract: No abstract text available
Text: 2SA1162 Pb Low noise:NF=1dB(Typ),10dB(Max). Lead-free Commplementary to 2SC2712. Small , . Marking Package Code 2SA1162 SO/SY/SG SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise , Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1162 ELECTRICAL , Production specification Silicon Epitaxial Planar Transistor 2SA1162 TYPICAL CHARACTERISTICS @ Ta , Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1162 PACKAGE OUTLINE


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PDF 2SA1162 2SC2712. OT-23 BL/SSSTC0092
2SA999

Abstract: 2SA1015 2sa733 2SA1038 2SA1026 2SA921 2SA933 2sa 1023 2SA1309A 2SA1318
Text: 2SB1086A 2SA 1022 - «5 T 2SA1256 2SA1162 2SA1733K 2SA 1023 0 ÉÉ. 2SA921 2SA1039 2SA 1 024 , 1033 - 0 il 2 SA 1015 2SA987 2SA1309A 2SA933 2SA 1034 . fó T 2SA930 2SA1162 2SA811A 2SA1031 2SA1037KLN 2SA 1035 - «J T 2SA929 2SA1162 2SA811A 2SA1032 2SA1037KLN 2SA 1 036 □ —A 2SA1338 2SA1182


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PDF 2SA1011 2SB940A 2SB1085B 1006B 2SA1306B 2SB817 2SA1011 2SB940 2SB1085 2SB921 2SA999 2SA1015 2sa733 2SA1038 2SA1026 2SA921 2SA933 2sa 1023 2SA1309A 2SA1318
2008 - Not Available

Abstract: No abstract text available
Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55к to +150к Epoxy meets UL 94 V-0 flammability rating Moisure


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23
2006 - 2SA1162

Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 A D C O Electrical


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Not Available

Abstract: No abstract text available
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Unit: mm Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) â , , ( ) marking symbol Marking 1 2003-03-27 2SA1162 2 2003-03-27 2SA1162 RESTRICTIONS ON


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PDF 2SA1162 2SC2712
2009 - 2SA1162

Abstract: 2SC2712
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: Unit: mm VCEO = -50 V, IC = -150 mA (max) · Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) · High hFE: hFE = 70~400 · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to 2SC2712 · Small , Marking 1 2007-11-01 2SA1162 2 2007-11-01 2SA1162 RESTRICTIONS ON PRODUCT USE ·


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
2006 - 2SA1162

Abstract: 2SC2712
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR (PNP) FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , Characteristics 2SA1162 Jiangsu Changjiang Electronics Technology


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PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712
2006 - MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , Characteristics 2SA1162 Jiangsu Changjiang Electronics Technology


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PDF OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
A1162

Abstract: 2SA1162 2SC2712
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1162 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 2.5 + - · High Voltage and High Current : VCE0 = _ 50V, IC = - 150mA (Max.) · Excellent hEE Linearity : hpE dC = -0.1m A) / hFE (IC = -2m A) = 0.95 (Typ.) · High hEE : hEE = 70~400 · Low Noise : NF = ldB (Typ.), lOdB (Max.) · , 2SA1162 NJ TO SH IBA 2SA1162 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SA1162 150mA 2SC2712 A1162 2SA1162 2SC2712
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. · High Voltage and High Current : V q e O " -50V, IC -150mA (Max.) · Excellent h p g Linearity : hpE d c = -0 .1 m A )/h jr g d c = -2 m A ) = 0.95 (Typ.) · H igh , all Package 2SA1162 Ï - U nit in mm 3.5-as + 0.5 I 0.ÍÍ5 1 .0 -0 .1 5 -e- MAXIMUM , . 1997-04-10 1/2 TOSHIBA 2SA1162 ic - VCE fr - ic UOLLECTOK-EM1TTEK VU LT AGE hFE 2000 IC


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PDF 2SA1162 --50V, ----150mA 2SC2712 961001EAA2'
2003 - 2SA1162

Abstract: 2SC2712
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = -50 V, IC = -150 mA (max) · Unit: mm Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ , , GR (G): 200~400, ( ) marking symbol Marking 1 2003-03-27 2SA1162 2 2003-03-27 2SA1162 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
2006 - 2SA1162

Abstract: 2SA1162G 2SA1162O
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D Features · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability C Electrical Characteristics @ 25 C Unless


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O
2SA1015

Abstract: 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785 2SA1016
Text: 2SA778(K) 2SA 811 „ e m 2SA1781 2SA1162 2SA1122 2SB814 2SA1037K 2SA 811A 0 s 2SA1257 2SA1162 2SB814 2SAI455K 2SA 812 „ B S 2SA1781 2SA1162 2SA1617 2SB709A 2SA1530 2SA1037K 2SA 813 B B 2SA1781


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PDF 2SB631 2SA743 2SA699A 2SB1064 2SA1339 2SA1015 2SA1016 2SA1015 2SA675 2SA836 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785
2008 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR (PNP) FEATURES Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter , Characteristics 2SA1162 Jiangsu Changjiang Electronics Technology


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PDF OT-23 OT-23 2SA1162 2SC2712 -100mA -10mA 2SA1162
2008 - 2SA1162GR

Abstract: 2SA1162-G
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162-O 2SA1162-Y 2SA1162-GR Features · · · · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G
Not Available

Abstract: No abstract text available
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to , commercial production 1982-12 1 2014-03-01 2SA1162 2 2014-03-01 2SA1162 RESTRICTIONS ON


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PDF 2SA1162 2SC2712
smd transistor SY

Abstract: 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
Text: Transistors SMD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) 1 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low noise: NF = 1dB (typ.), 10dB (max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 , www.kexin.com.cn 1 Transistors SMD Type 2SA1162 Fig.1 Collector emitter voltage Fig.2 Collector


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PDF 2SA1162 OT-23 Col100 smd transistor SY 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
MARKING LODB

Abstract: 2SA1162
Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES: · High Voltage and High Current. V c EO= 50V, Ic=150mA (Max.) Unit in nun +0.5 2 . 5- 0.3 +0 . 2 5 1 . 5- 0.15 · , i 2SA1162 CE -0.1 -0 .3 -0 5 -1 -i - 5 -1 0 - 3 0 - 5 0 -1 0 0 -3 0 0 , ) -52- 2SA1162 P O W ER DISSPATION AMBIENT TEMPERATURE Ta (TJ) -53-


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PDF 2SA1162 150mA -100mA, -10mA 10kfl MARKING LODB 2SA1162
SY SOT23

Abstract: SG SOT23 MARKING MARKING sg SOT23
Text: 2SA1162 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , Rank Range Marking hFE O 70-140 SO Y 120-240 SY GR(G) 200-400 SG 2SA1162 SOT


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PDF 2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23
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Abstract: No abstract text available
Text: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to , 2007-11-01 2SA1162 2 2007-11-01 2SA1162 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation


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PDF 2SA1162 2SC2712
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