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2SA1162-O,LF(T Toshiba America Electronic Components Chip1Stop 3,000 $0.14 $0.12
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2SA1162-O datasheet (7)

Part Manufacturer Description Type PDF
2SA1162-O Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1162O Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) Scan PDF
2SA1162OTE85L Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
2SA1162-OTE85L Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
2SA1162-O(TE85L,F) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN PNP -50V -0.15A S-MINI Original PDF
2SA1162OTE85R Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
2SA1162-OTE85R Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF

2SA1162-O Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1162

Abstract: 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
Text: 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 A L 3 3 MECHANICAL DATA C B Top View Case: SOT-23, Molded Plastic Weight: 0.008 grams(approx.) 1 1 K 2 E 2 D CLASSIFICATION OF hFE F Product-Rank 2SA1162-O 2SA1162-Y 2SA1162


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PDF 2SA1162 OT-23 2SC2712 OT-23, 2SA1162-O 2SA1162-Y 2SA1162-GR -100A, -100mA, -10mA 2SA1162 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
2008 - 2SA1162Y

Abstract: 2SA1162
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A , : Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 SOT-23 A D C O , (VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K¡) H G O 70-140 SO J DIMENSIONS DIM A B C D


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162Y 2SA1162
2008 - Not Available

Abstract: No abstract text available
Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of , information) SOT-23 A D C O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol , =1MHz) Noise Figure (VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K¡) H G O 70-140 SO J DIMENSIONS


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23
2SA1162

Abstract: 2SA1162 PNP 2SC2712
Text: 10 dB hFE O ( O ): 70~140, Y (Y): 120~240, GR (G): 200~400 ( ) hFE SO 2


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PDF 2SA1162 2SC2712 O-236MOD SC-59 2SA1162 2SA1162 PNP 2SC2712
2006 - 2SA1162

Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A , : Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 A D C O Electrical , Capacitance (VCB=-10Vdc, IE=0, f=1MHz) Noise Figure (VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K¡) H G O


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
2SA1162

Abstract: MARKING sg SOT23 MARKING SY SOT23 marking code SG transistor sg sot23 2SC2712 sy marking code sot23 sot23 marking SY SG SOT23 MARKING SY SOT23
Text: 80 V MHz hFE(1) Rank O Y G Range 70-140 120-240 200-400 Document


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PDF 2SA1162 2SC2712. OT-23 BL/SSSTC0092 2SA1162 MARKING sg SOT23 MARKING SY SOT23 marking code SG transistor sg sot23 2SC2712 sy marking code sot23 sot23 marking SY SG SOT23 MARKING SY SOT23
2008 - 2SA1162GR

Abstract: 2SA1162-G
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162-O 2SA1162-Y 2SA1162-GR Features · · · · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature , =10K¡) Rank Range Marking O 70-140 SO Y 120-240 SY Min -50 -50 -5 -Max -0.1 -0.1 Units Vdc Vdc Vdc uAdc K G O C B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO F E B E


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G
2007 - 2SA1162

Abstract: No abstract text available
Text: A Note: hFE classification O ( O ): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol


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PDF 2SA1162 2SC2712 2SA1162
2006 - 2SA1162

Abstract: 2SA1162G 2SA1162O
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D Features · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base , =10K¡) Rank Range Marking O 70-140 SO Y 120-240 SY Min -50 -50 -5 -Max -0.1 -0.1 Units Vdc Vdc Vdc uAdc K G O C B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO F E B E


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O
2008 - Not Available

Abstract: No abstract text available
Text: 80 V MHz 4 7 pF 1.0 10 dB hFE(1) Rank O Y G Range 70-140


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PDF 2SA1162 2SC2712. OT-23 BL/SSSTC0092
Not Available

Abstract: No abstract text available
Text: £§ 1.0 10 dB Note: hFE classification O ( O ): 70~140, Y (Y): 120~240, GR (G): 200~400


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PDF 2SA1162 2SC2712
Not Available

Abstract: No abstract text available
Text: GENERAL PURPOSE AMPLIFIER APPLICATIONS. · High Voltage and High Current : V q e O " -50V, IC -150mA , perature Range SYM BOL VCBO VCEO Ve b o m tb RATING -5 0 -5 0 -5 -1 5 0 -30 150 125 - 5 5 -125 , Frequency Collector Output Capacitance Noise Figure N ote: SYM BO L ICBO Ie b o hFE (Note) V CE (sat) fT Cob , / i b = i o oä u H o e - 0.1 BASE-EM ITTER VOLTAGE VßE (V) -0 .0 5 a S - 0.03 3 -o.oi - 0 .1 j o Ü Pc - 0 .3 -1 -3 -1 0 -3 0 IC (mA) -1 0 0 COLLEECTOR CURRENT - Ta -5 o V ß


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PDF 2SA1162 --50V, ----150mA 2SC2712 961001EAA2'
Not Available

Abstract: No abstract text available
Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation , request by adding suffix "-HF" • • • • • • • • SOT-23 A D C O , INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 O 70-140 SO Y 120-240


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23
2009 - 2SA1162

Abstract: 2SC2712
Text: Note: hFE classification fT O ( O ): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
2003 - 2SA1162

Abstract: 2SC2712
Text: kHz, Rg = 10 kW, ¾ 1.0 10 dB Note: hFE classification O ( O ): 70~140, Y (Y): 120~240


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
2006 - 2SA1162

Abstract: 2SC2712
Text: VCE=-6V,Ic=0.1mA, 7 dB hFE O Y GR(G) 70-140 120-240 200-400 Typical


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PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712
2006 - MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Text: VCE=-6V,Ic=0.1mA, 7 dB hFE O Y GR(G) 70-140 120-240 200-400 Typical


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PDF OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
MARKING LODB

Abstract: 2SA1162
Text: =-0.1mA f=lkHz, Rq=10kfl MIN. _ TYP. _ MAX. -0.1 1 O UNIT ( l A j l A . . 70 -0.1 400 0.3 - V MHz 80 . - 4 1.0 7 10 pF dB hFE L O ' B - H -51 - , ) -52- 2SA1162 P O W ER DISSPATION AMBIENT TEMPERATURE Ta (TJ) -53-


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PDF 2SA1162 150mA -100mA, -10mA 10kfl MARKING LODB 2SA1162
A1162

Abstract: 2SA1162 2SC2712
Text: b o ic Ib Pc Ti T S tg RATING -5 0 -5 0 -5 -1 5 0 -3 0 150 125 -5 5 -1 2 5 UNIT V 1. BASE V 2


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PDF 2SA1162 150mA 2SC2712 A1162 2SA1162 2SC2712
2008 - Not Available

Abstract: No abstract text available
Text: =10KΩ pF 10 dB hFE O Y GR(G) 70-140 120-240 200-400 SO SY SG Typical


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PDF OT-23 OT-23 2SA1162 2SC2712 -100mA -10mA 2SA1162
Not Available

Abstract: No abstract text available
Text: O ( O ): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, ( ) marking symbol Marking Start of


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PDF 2SA1162 2SC2712
2SA1162

Abstract: 2SC2712
Text: continually w orking to im prove th e quality and the reliability o f its products. Nevertheless , vulnerability to physical stress. It is th e responsibility o f th e buyer, w hen utilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in which a m alfunction or failure o f a TOSHIBA product could cause loss o f human life, bodily injury or damage to property. In developing your designs , IC -240 - 2 .0 - VCE COMMON EMITTER fr - ic -1 . Ö -160 - 1 X)_ Ta = 25°C - 0


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PDF 2SA1162 150mA 2SC2712 961001EAA2' 2SA1162 2SC2712
smd transistor SY

Abstract: 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
Text: Marking SO SY SR Rank O Y GR hFE 70 140 120 240 200 400


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PDF 2SA1162 OT-23 Col100 smd transistor SY 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
SY SOT23

Abstract: SG SOT23 MARKING MARKING sg SOT23
Text: Rank Range Marking hFE O 70-140 SO Y 120-240 SY GR(G) 200-400 SG 2SA1162 SOT


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PDF 2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23
Not Available

Abstract: No abstract text available
Text: classification fT O ( O ): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol Marking 1


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PDF 2SA1162 2SC2712
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