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Part Manufacturer Description Datasheet Download Buy Part
2SA1162S-Y,LF Toshiba America Electronic Components X34 PB-F S-MINI PLN (LF) TRANSISTOR PD=150MW F=80MHZ
2SA1162-O,LF Toshiba America Electronic Components TRANS PNP 50V 0.15A S-MINI
2SA1162-GR,LF Toshiba America Electronic Components TRANS PNP 50V 0.15A S-MINI
2SA1162-Y,LF Toshiba America Electronic Components TRANS PNP 50V 0.15A S-MINI
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2SA1162-GR Toshiba America Electronic Components Chip One Exchange 2,825 - -
2SA1162-GR (T5L,M) Toshiba Corporation Bristol Electronics 2,532 - -
2SA1162-GR,LF Toshiba America Electronic Components Chip1Stop 1,897 $0.05 $0.04
2SA1162-GR,LF Toshiba America Electronic Components Chip1Stop 3,000 $0.19 $0.03
2SA1162-GR,LF Toshiba America Electronic Components Avnet - - -
2SA1162-GR,LF(B Toshiba America Electronic Components Chip1Stop 1,840 $0.19 $0.10
2SA1162-GR,LF(T Toshiba America Electronic Components Avnet 15,000 $0.12 $0.07
2SA1162-GR,LF(T Toshiba America Electronic Components Chip1Stop 3,000 $0.14 $0.12
2SA1162-GR(TE85L,F)) Toshiba America Electronic Components Chip1Stop 8,700 $0.17 $0.14
2SA1162-GR(TE85R,F) Toshiba America Electronic Components Chip1Stop 1,100 $0.17 $0.16
2SA1162GRSGTE85L Toshiba America Electronic Components ComS.I.T. 3,850 - -
2SA1162GRT5LT Toshiba America Electronic Components ComS.I.T. 11,000 - -
2SA1162GRTE85L,F Toshiba America Electronic Components Avnet - - -

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2SA1162-GR datasheet (15)

Part Manufacturer Description Type PDF
2SA1162-GR Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
2SA1162GR Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) Scan PDF
2SA1162GRF Toshiba 2SA1162GRF - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Original PDF
2SA1162-GR,LF Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN PNP -50V -0.15A S-MINI Original PDF
2SA1162-GR(T5L,F,T) Toshiba 2SA1162 - TRANS PNP 50V 150MA S-MINI Original PDF
2SA1162GRT5LFT Toshiba 2SA1162GRT5LFT - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R Original PDF
2SA1162-GR(T5LM) Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) Scan PDF
2SA1162GRT5LT Toshiba 2SA1162GRT5LT - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R Original PDF
2SA1162GRT5LT Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) Scan PDF
2SA1162-GR(TE85L) Toshiba 2SA1162 - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R Original PDF
2SA1162GRTE85L Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
2SA1162-GR(TE85L) Toshiba TRANS GP BJT PNP 50V 0.15A 3(2-3F1A) T/R Scan PDF
2SA1162-GR(TE85L,F Toshiba 2SA1162 - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R Original PDF
2SA1162GRTE85LF Toshiba 2SA1162GRTE85LF - Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R Original PDF
2SA1162GRTE85R Toshiba 2SA1162 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF

2SA1162-GR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 2SA1162Y

Abstract: 2SA1162
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material , 120-240 SY GR 200-400 SG MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162Y 2SA1162
2008 - Not Available

Abstract: No abstract text available
Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and , .003 .015 Y 120-240 SY GR 200-400 SG MM MAX .120 .104 .055 .041 .081 .024 .0039


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23
2SA1162

Abstract: 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
Text: 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 A L 3 3 MECHANICAL DATA C B Top View Case: SOT-23, Molded Plastic Weight: 0.008 grams(approx.) 1 1 K 2 E 2 D CLASSIFICATION OF hFE F Product-Rank 2SA1162-O 2SA1162-Y 2SA1162-GR


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PDF 2SA1162 OT-23 2SC2712 OT-23, 2SA1162-O 2SA1162-Y 2SA1162-GR -100A, -100mA, -10mA 2SA1162 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23
2006 - 2SA1162

Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Case Material , .070 .018 .0005 .035 .003 .015 Y 120-240 SY GR 200-400 SG MAX .120 .098 .055 .041


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
2008 - 2SA1162GR

Abstract: 2SA1162-G
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162-O 2SA1162-Y 2SA1162-GR Features · · · · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free , (1) GR 200-400 SG .037 .950 .037 .950 www.mccsemi.com Revision: A 1 of 2 2011/01/01


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G
2006 - 2SA1162

Abstract: 2SA1162G 2SA1162O
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D Features · · · · Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55 to +150 x Case Material: Molded , Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm CLASSIFICATION OF HFE (1) GR


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PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O
2SA1162

Abstract: 2SA1162 PNP 2SC2712
Text: 10 dB hFE O (O): 70~140, Y (Y): 120~240, GR (G): 200~400 ( ) hFE SO 2


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PDF 2SA1162 2SC2712 O-236MOD SC-59 2SA1162 2SA1162 PNP 2SC2712
Not Available

Abstract: No abstract text available
Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55к to , SY GR 200-400 SG MM MAX .120 .104 .055 .041 .081 .024 .0039 .044 .007 .020 MIN


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PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23
2006 - MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Text: VCE=-6V,Ic=0.1mA, 7 dB hFE O Y GR (G) 70-140 120-240 200-400 Typical


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PDF OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
2006 - 2SA1162

Abstract: 2SC2712
Text: VCE=-6V,Ic=0.1mA, 7 dB hFE O Y GR (G) 70-140 120-240 200-400 Typical


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PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712
2007 - 2SA1162

Abstract: No abstract text available
Text: A Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol


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PDF 2SA1162 2SC2712 2SA1162
Not Available

Abstract: No abstract text available
Text: £§ 1.0 10 dB Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400


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PDF 2SA1162 2SC2712
2008 - Not Available

Abstract: No abstract text available
Text: =10KΩ pF 10 dB hFE O Y GR (G) 70-140 120-240 200-400 SO SY SG Typical


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PDF OT-23 OT-23 2SA1162 2SC2712 -100mA -10mA 2SA1162
2003 - 2SA1162

Abstract: 2SC2712
Text: , GR (G): 200~400, ( ) marking symbol Marking 1 2003-03-27 2SA1162 2 2003-03-27


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
smd transistor SY

Abstract: 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
Text: Marking SO SY SR Rank O Y GR hFE 70 140 120 240 200 400


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PDF 2SA1162 OT-23 Col100 smd transistor SY 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
SY SOT23

Abstract: SG SOT23 MARKING MARKING sg SOT23
Text: Rank Range Marking hFE O 70-140 SO Y 120-240 SY GR (G) 200-400 SG 2SA1162 SOT


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PDF 2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23
Not Available

Abstract: No abstract text available
Text: 0 , Y(Y): 1 2 0 -2 4 0 , GR (G): 2 0 0 -4 0 0 ( ) M arking Symbol MARKING 1=1 Type Nam e h


OCR Scan
PDF 2SA1162 --50V, ----150mA 2SC2712 961001EAA2'
A1162

Abstract: 2SA1162 2SC2712
Text: Noise Figure f = 1kHz, Rg=10kn Note: hFE Classification 0(0 ): 70-140, Y(Y): 120-240, GR (G): 200~ 400


OCR Scan
PDF 2SA1162 150mA 2SC2712 A1162 2SA1162 2SC2712
2009 - Not Available

Abstract: No abstract text available
Text: CLASSIFICATION OF hFE RANK RANGE MARKING 22-Oct-2009 Rev. B O Y GR (G) 70-140 120-240


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PDF 2SA1162 OT-23 2SC2712. -100mA, -10mA 22-Oct-2009
Not Available

Abstract: No abstract text available
Text: Y GR hFE 70 140 http://www.twtysemi.com 120 240 200 400


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PDF 2SA1162 OT-23
2009 - 2SA1162

Abstract: 2SC2712
Text: Note: hFE classification fT O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol


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PDF 2SA1162 2SC2712 2SA1162 2SC2712
2SA1162

Abstract: 2SC2712 2SA1162 PNP
Text: hFE O Y GR (G) Range 70-140 120-240 200-400 Marking SO SY SG Rank


Original
PDF 2SA1162 OT-23 2SC2712. -100mA -10mA 01-Jun-2002 2SA1162 2SC2712 2SA1162 PNP
Not Available

Abstract: No abstract text available
Text: O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, ( ) marking symbol Marking Start of


Original
PDF 2SA1162 2SC2712
2SA1162

Abstract: 2SC2712
Text: = -6V, IC = 0.1mA, f = 1kHz, R g=10kn Note: hFE Classification 0 (0 ): 7 0-140, Y(Y): 120-240, GR (G


OCR Scan
PDF 2SA1162 150mA 2SC2712 961001EAA2' 2SA1162 2SC2712
Not Available

Abstract: No abstract text available
Text: classification fT O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol Marking 1


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PDF 2SA1162 2SC2712
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