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Toshiba America Electronic Components
2SA1160-B(TE6,F,M) Trans GP BJT PNP 10V 2A 3-Pin LSTM T/R - Tape and Reel (Alt: 2SA1160-B(TE6,F,M)) 2SA1160-B(TE6,F,M) ECAD Model
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2SA1160 datasheet (21)

Part ECAD Model Manufacturer Description Type PDF
2SA1160 2SA1160 ECAD Model Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
2SA1160 2SA1160 ECAD Model Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SA1160 2SA1160 ECAD Model Various Russian Datasheets Transistor Original PDF
2SA1160 2SA1160 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1160 2SA1160 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1160 2SA1160 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1160 2SA1160 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SA1160 2SA1160 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1160 2SA1160 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1160 2SA1160 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1160 2SA1160 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1160 2SA1160 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1160 2SA1160 ECAD Model Toshiba Silicon PNP transistor for medium power amplifier applications and strobe flash applications Scan PDF
2SA1160 2SA1160 ECAD Model Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
2SA1160 2SA1160 ECAD Model Toshiba TO-92MOD Audio / TV Transistors Scan PDF
2SA1160A 2SA1160A ECAD Model Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
2SA1160A 2SA1160A ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1160B 2SA1160B ECAD Model Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF
2SA1160B 2SA1160B ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1160C 2SA1160C ECAD Model Toshiba TRANS GP BJT PNP 10V 2A 3(2-5J1A) Original PDF

2SA1160 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SA1160

Abstract: A1160
Text: 2SA1160 PNP (PCT) 2SA1160 · : mm hFE : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 ()120 () (VCE = -1 V, IC = -4 A) · : VCE (sat) = -0.5 V () (IC = -2 A, IB = , 2SA1160 (Ta = 25°C) ICBO VCB , [[Pb]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-12-21 2SA1160 IC ­ , (V) 40 80 3 120 Ta 160 200 (°C) 2009-12-21 2SA1160 · ·


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PDF 2SA1160 O-92MOD 2SA1160 A1160
2SA1160

Abstract: A1160
Text: 2SA1160 PNP (PCT) 2SA1160 · : mm hFE : hFE (1) = 140~600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 ()120 () (VCE = -1 V, IC = -4 A) · : VCE (sat) = -0.5 V () (IC = -2 A, IB = , 2SA1160 (Ta = 25°C) ICBO VCB , A1160 () No. (: : ) 2 2006-11-07 2SA1160 IC ­ VCE IC ­ VBE -4 , Ta 160 200 (°C) 2006-11-07 2SA1160 20070701-JA · · " "


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PDF 2SA1160 O-92MOD 20070701-JA 2SA1160 A1160
2004 - transistor A1160

Abstract: 2SA1160 A1160
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE , to 400, C: 300 to 600 1 2004-07-07 2SA1160 Marking A1160 Part No. (or abbreviation , )-free finish. 2 2004-07-07 2SA1160 IC ­ VCE IC ­ VBE -4 -100 -10 -2 -5 -3 , ) 2004-07-07 2SA1160 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is


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PDF 2SA1160 transistor A1160 2SA1160 A1160
2007 - 2SA1160

Abstract: transistor A1160 A1160
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE , 2SA1160 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2006-11-09 2SA1160 IC ­ VCE IC ­ VBE -4 Common emitter Ta = 25°C -30 (A) -20 -3 , temperature Ta (°C) 3 2006-11-09 2SA1160 RESTRICTIONS ON PRODUCT USE 20070701-EN · The


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PDF 2SA1160 2SA1160 transistor A1160 A1160
2006 - Not Available

Abstract: No abstract text available
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1 , report and estimated failure rate, etc). 1 2006-11-09 2SA1160 Electrical Characteristics (Ta = , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1160 IC ­ VCE -4 , Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2006-11-09 2SA1160


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PDF 2SA1160
transistor A1160

Abstract: 2SA1160 A1160
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1160 STROBE FLASH APPLICATIONS 2SA1160 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm >.1 MAX 8.2MAX. 0.75MAX. -1.0MAX. 0.8MAX. 0.6MAX. Hi MEDIUM POWER AMPLIFIER APPLICATIONS · · II1 i 1 2.54 3 rvi MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC V Collector-Base Voltage -2 0 v CBO Collector-Emitter Voltage V -1 0 v CEO 6 V , 10-29 - 2SA1160 TO SH IBA 2SA1160 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SA1160 75MAX. transistor A1160 2SA1160 A1160
2011 - 2SA116

Abstract: No abstract text available
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm · High DC current gain and excellent hFE , test report and estimated failure rate, etc). 1 2011-01-18 2SA1160 Electrical , hazardous substances in electrical and electronic equipment. 2 2011-01-18 2SA1160 IC ­ VCE -4 , Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2011-01-18 2SA1160 RESTRICTIONS ON


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PDF 2SA1160 2SA116
2009 - transistor A1160

Abstract: 2SA1160 A1160 25j1A
Text: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications · Unit: mm High DC current gain and excellent hFE , 2SA1160 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , equipment. 2 2009-12-21 2SA1160 IC ­ VCE IC ­ VBE -4 Common emitter Ta = 25°C -30 , 2009-12-21 2SA1160 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and


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PDF 2SA1160 transistor A1160 2SA1160 A1160 25j1A
transistor A1160

Abstract: A1160 2SA1160
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA1160 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. 2SA1160 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm 5.1 MAX · · High DC Current Gain and Excellent hjpg Linearity : hFE(l) = 140-600 (Vc e = - 1V> Ic = -0.5A ) : hFE(2) - 60 (Min.), 120 (Typ.) (VCE - - 1 Ic = - 4A) Low Saturation Voltage : VcE(sat) = - 0.5V (Max.) (IC = - 2A, IB = - , COLLECTOR CURRENT Iq (A) 2001 05-24 - 2SA1160 TO SH IBA 2SA1160 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1160 O-92MOD --20V, transistor A1160 A1160 2SA1160
2SA1160

Abstract: A1160
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1160 STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. 2SA1160 U nit in mm 5.1 MAX · High DC Current Gain and Excellent hjrg Linearity : hFE(l) = 140-600 (VC E = - I V , I c = - 0 .5 A ) : hFE(2) = 60 (M in.), 120 (Typ.) (VCE = - I V , I c = -4 A ) · Low Saturation Voltage : V C E(sat)= -0 .5 V , Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SA1160 IC - VC E


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PDF 2SA1160 75MAX 961001EAA2' 2SA1160 A1160
Not Available

Abstract: No abstract text available
Text: 2SA1160 · · SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. Unit in mm High DC Current Gain and Excellent hp-g Linearity : hpE(l) = 140-600 (V c e = - I V , l £ = -0.5A) : hpg( 2) =60 (M in.), 120 (Typ.) ( V q e = - IV , I c = -4 A ) Low Saturation Voltage : VCE(sat)= -0.5V (M ax.)(Ic = -2 A , lB = -50m A ) RATING -2 0 , - Note 2 : h^E d) Classification A : 140~280, B : 200~400, C : 300~600 - - 142 2SA1160


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PDF 2SA1160 75MAX
2SA1160

Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1160 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT


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PDF O-92MOD 2SA1160 O-92MOD -10mA -50mA 2SA1160
2SA1146

Abstract: 2SB1200 2SB605 2SB764 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
Text: 1058 0 à 2SB926 2SA1160 2SB1068 2SB976 2SB1010 2SB 1059 S fi 2SB1229 2SA1315 2SB1116 2SB621 , 2SB795 2SB1102 2SB1272 2SB 1068^ 0 n 2SB926 2SA1160 2SB976 2SA1286 2SB1010 2SB 1069 fé T 2SB507


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PDF 2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB605 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
2SA1160

Abstract: No abstract text available
Text: 2SA1160 2SA1160 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -1mA , IE=0 -20


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PDF 2SA1160 O-92MOD -10mA -50mA 2SA1160
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1160 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. · 2SA1160 U nit in mm 5.1 M AX High DC C urrent Gain and Excellent hpE Linearity : h p E (l) = 140"-600 (V c e = -IV , I ç = -0.5A) : hFE(2) = 60 (M in.), 120 (Typ.) (VCE = - I V , IC = -4 A ) · Low Saturation Voltage : V(TE(sat)= -0.5V (Max , TO SH IB A 2SA1160 IC - VCE IC - vbe COLLECTOR-EMITTER VOLTAGE Vq e (V


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PDF 2SA1160 --50mA) 961001EAA2'
transistor A1160

Abstract: A1160 2SA1160
Text: TOSHIBA 2SA1160 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A1160 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain and Excellent hpE Linearity : hFE(l) = 140-600 (VCE=-1V, IC= -0.5A) : hFE(2) = 60 (Min.), 120 (Typ.) (VCE= -IV, IC= -4A) • Low Saturation Voltage : VcE(sat) = - 0.5 V (Max.) (IC =-2A, IB=-50mA) MAXIMUM RATINGS (Ta = 25 , . 1997-09-01 1/2 TOSHIBA 2SA1160 IC - VCE ic - Vbe -1 Ol -50 1 -30 COMMON EMITTER Ta = 25°C 1


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PDF 2SA1160 A1160 -50mA) 961001EAA2' transistor A1160 A1160 2SA1160
2SA1161

Abstract: TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1156 2SA1209 SA1162
Text: - 24 - a « tt « ffl iâ (Ta=25"C,*EnííTc=25^) asmóte (Ta=25,C) [*EP(ítypíI] Ve BO (V) VcEO (V) IC(DC) (A) Pc (W) Pc* (W) ',CB0, (max) (/¡A) Vcb (V) (min) (max) '»CE (V) 1 C/ i E (A) (max) (V) (V) le (A) IB (A) 2SA1156 05 HÏ HS PSW -400 -400 -0.5 1 10 -100 -400 30 200 -5 -0.1 -1 -1.2 -0. 1 -0.01 2SA1160 -20 -10 -2 0. 9 -0.1 -20 140 , (TO—126) ECBC 2SA1156 140* -1 -0. 5 50* (TO-92MOD) ECB 2SA1160 3500* -5 -0.01 0. 95* 0


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PDF 2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2Sa1206 2SA1182 2SA1173 2SA1163 2SA1160 2SA1209
2Sj72

Abstract: transistor 2SC2655 2SK147 2SC3225 2sc2383 2SC238 transistor 2sc2482 high voltage driver transistor 2sc2500 2sc2705
Text: 9. TO-92 MOD PACKAGE SERIES L-SSTM co o C D N ro Ul o K) X H CD Ï» >TRANSISTOR ^ Application NPN Low Saturation Audio Out Audio Out Low Saturation Low Saturation Low Saturation High Voltage AMP & o Type No. PNP 2SA1160 h FE VcEO (V) 10 30 ·c (A) 2 1 1.5 2 2 2 2 1 PC 2SA1160 VCE (V) 1 2 2 1 2 2 2 5 ·ç.t. ImA) 5Ò0 100 500 400 500 500


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PDF 2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2SC3225 2sc2383 2SC238 transistor 2sc2482 high voltage driver transistor 2sc2500 2sc2705
Not Available

Abstract: No abstract text available
Text: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2 S A 1 160 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 MAX High DC Current Gain and Excellent hFE Linearity : hFE(l) = 140-600 (Vc e = - I V , Ic= -0 .5 A ) : hFE(2) = 60 (Min.), 120 (Typ.) (VCE= -IV , IC= -4A ) Low Saturation Voltage : VCE(sat)= -0.5V (Max , 2SA1160 TOSHIBA IC - VCE IC - VBE < 0 0 E -< H D o D O 1 s 1 s t


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PDF 2SA1160 -50mA) 100ms 961001EAA2'
2009 - Not Available

Abstract: No abstract text available
Text: 2SA1160 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W (Tamb=25℃) ● Collector current ICM: -2 A ● Collector-base voltage V(BR)CBO: -20 V ● Operating and storage junction temperature range TO-92L G H TJ, TSTG: -55℃ to +150℃ 1Emitter 2Collector 3Base J A D Collector REF. 2 B K 3 Base PACKAGING


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PDF 2SA1160 O-92L -50mA 01-April-2009
2SA1281

Abstract: 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
Text: 2SB1050 2SB1010 2SA 1282A = « 2SB892 2SA1160 2SB1008 2SB873 2SB1086A 2SA 1283 - = « 2SB764


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PDF 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330 2SB792 2SA1226 2SA1022 2SA1733K 2SA1281 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SA1160 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES High DC Current Gain and Excellent hFE Linearity Low Saturation Voltage 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -2


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PDF O-92L 2SA1160 -10mA
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO – 92M TO – 92M TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES High DC Current Gain and Excellent hFE Linearity Low Saturation Voltage 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base


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PDF O-92MOD 2SA1160 -10mA
TO-3P

Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
Text: 2SA1388 2SC4658 2SC3258 2SC3540 2SC3303 ·2SC3558 4 2SA1300 2 2SA1160 (VCEO=10V) 2SC3279 2SC2500 (VCEO


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PDF 2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 O-126 O-220AB T0-220 TO-3P 2SC3303 2sc3783 2sc2562 2sa1329 2sd717 2sc2655 2sb754
2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1041 2SD2238 2SA1243 2SB564 2SB1067
Text: - 60 - S « Type No. tt « Manuf. H !M SANYO M S TOSHIBA B a NEC B iL HITACHI « ± m FUJITSU « T MATSUSHITA H m MITSUBISHI □ - A ROHM 2SB 1013 V H. 2SA1160 2SB1068 2SB976 2SB1426 2SB 1014 «- S ß 2SA1020 2SB1116 2SB621 2SB1Q44M 2S8 1015 - M 'S 2SB1134 2SB1094 2SB941 2SB1370 2SB 1016 , ü 2 2SB1454 2SB1095 2SB1063 2SB1294 2SB 1017 S 3E 2SB1454 2SB1095 2SB942A 2SA1635 2SB 1018 M 2 2SB1467 2SA1742 2SB946 2SB1290 2SB 1019 _ 2SB1135 2SA1742 2SB953A 2SB 1020


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PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1041 2SD2238 2SA1243 2SB564 2SB1067
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