The Datasheet Archive

2SA1121 datasheet (30)

Part ECAD Model Manufacturer Description Type PDF
2SA1121 2SA1121 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SA1121 2SA1121 ECAD Model Hitachi Semiconductor Silicon PNP Transistor Original PDF
2SA1121 2SA1121 ECAD Model Kexin Silicon PNP Epitaxial Original PDF
2SA1121 2SA1121 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1121 2SA1121 ECAD Model TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original PDF
2SA1121 2SA1121 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial - Low Freq Amplifier Scan PDF
2SA1121 2SA1121 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1121 2SA1121 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1121 2SA1121 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1121 2SA1121 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1121 2SA1121 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1121 2SA1121 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
2SA1121 2SA1121 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1121 2SA1121 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1121 2SA1121 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SA1121B 2SA1121B ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 35V 0.5A 3MPAK Original PDF
2SA1121B 2SA1121B ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1121C 2SA1121C ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 35V 0.5A 3MPAK Original PDF
2SA1121C 2SA1121C ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1121D 2SA1121D ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 35V 0.5A 3MPAK Original PDF

2SA1121 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Hitachi DSA002754

Abstract: No abstract text available
Text: 2SA1121 Silicon PNP Epitaxial Application · Low frequency amplifier · Complementary pair with 2SC2618 Outline 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction , hFE B SB 60 to 120 C SC 100 to 200 VBE 1. The 2SA1121 is grouped by h FE as follows. See characteristic curves of 2SA673. 2 2SA1121 3 2SA1121 When using this document, keep the


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PDF 2SA1121 2SC2618 Hitachi DSA002754
Not Available

Abstract: No abstract text available
Text: 2SA1121 Silicon PNP Epitaxial HITACHI Application · · Low frequency am plifier Complementary pair w ith 2SC2618 Outline MPAK 2 1. Emitter 2. Base 3. Collector 132 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter , Mark B SB 60 to 120 C 1. The 2SA1121 is grouped by hF E as follows. D SC 100 to 200 SD 160 to 320 , 133 2SA1121 Maximum Collector Dissipation Curve Ambient Temperature Ta (°C) 134 HITACHI


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PDF 2SA1121 2SC2618 2SA1121 2SA673.
2000 - 2SA1121

Abstract: Hitachi DSA0076 2SA673 2SC2618
Text: 2SA1121 Silicon PNP Epitaxial ADE-208-1008 (Z) 1st. Edition Mar. 2001 Application · Low , . Collector 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector , voltage Note: 1. The 2SA1121 is grouped by hFE as follows. Grade B C D Mark SB SC , VCE = ­3 V, IC = ­10 mA 2SA1121 Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 2SA1121


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PDF 2SA1121 ADE-208-1008 2SC2618 2SA1121 Hitachi DSA0076 2SA673 2SC2618
2013 - Not Available

Abstract: No abstract text available
Text: Preliminary Ordering Information Orderable Part Number 2SA1121SCTL-E 2SA1121SDTL-E 2SA1121SCTL-H 2SA1121SDTL-H Note: Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping For some , Preliminary Datasheet 2SA1121 R07DS0271EJ0400 Rev.4.00 Jan 10, 2014 Silicon PNP , €“4 –500 150 150 –55 to +150 Unit V V V mA mW °C °C Page 1 of 5 2SA1121 , . The 2SA1121 is grouped by hFE as follows. Grade C D Mark hFE SC 100 to 200 SD 160 to 320


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PDF 2SA1121 R07DS0271EJ0400 2SC2618 PLSP0003ZB-A R07DS0271EJ0400
2000 - 2SA1121

Abstract: 2SA673 2SC2618
Text: products contained therein. 2SA1121 Silicon PNP Epitaxial ADE-208-1008 (Z) 1st. Edition Mar , 1 2 1. Emitter 2. Base 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item , - Base to emitter voltage Note: 1. The 2SA1121 is grouped by hFE as follows. Grade B , characteristic curves of 2SA673. 2 V VCE = ­3 V, IC = ­10 mA 2SA1121 Collector power dissipation Pc , Temperature Ta (°C) 3 2SA1121 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95


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PDF
2005 - 2SA1121

Abstract: 2SA1121SCTL-E 2SA1121SDTL-E 2SC2618 SC-59A
Text: 1.95 1.05 0.3 Ordering Information Part Name 2SA1121SCTL-E 2SA1121SDTL-E Quantity 3000 , 2SA1121 Silicon PNP Epitaxial REJ03G0636-0200 (Previous ADE-208-1008) Rev.2.00 Aug , ­55 to +150 Unit V V V mA mW °C °C 2SA1121 Electrical Characteristics (Ta = 25 , 100 10 Base to emitter voltage VBE - Note: 1. The 2SA1121 is grouped by hFE as follows. Grade , = ­3 V, IC = ­10 mA 2SA1121 Main Characteristics Typical Output Characteristics (1) ­100


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PDF 2SA1121 REJ03G0636-0200 ADE-208-1008) 2SC2618 PLSP0003ZB-A 2SA1121 2SA1121SCTL-E 2SA1121SDTL-E 2SC2618 SC-59A
1999 - transistor 2SA673

Abstract: 2SA1121 2SA673 2SC2618 DSA003787
Text: 2SA1121 Silicon PNP Epitaxial Application · Low frequency amplifier · Complementary pair with 2SC2618 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO ­35 V , test) VBE - ­0.64 - Base to emitter voltage Note: 1. The 2SA1121 is grouped by h , 160 to 320 See characteristic curves of 2SA673. 2 V VCE = ­3 V, IC = ­10 mA 2SA1121


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PDF 2SA1121 2SC2618 transistor 2SA673 2SA1121 2SA673 2SC2618 DSA003787
2SA1121

Abstract: 2SA673 2SC2618 A1121 Mark SB
Text: HITACHI 2SA1121 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC2618 0.4 :ss '¡g 1 o J ( in « ill! 1 i 0.95 0.95 i 1.9 In' >c d 2,8!" 1 n d IQ- ojlJit 1. Emilter 2. Baw 3. Collecw (Dimensions in mm) (MPAK) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SA1121 Unit Collector lo base voltage Vcbo -35 V Collector to emitter voltage Vceo -35 V Emitter to base voltage Vkbo -4 V Collector current Ic -500 mA Collector power


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PDF 2SA1121 2SC2618 2SA1121 -150mA, -15mA -500mA A1121 2SA673. 2SA673 2SC2618 Mark SB
2005 - 2SA1121SCTL-E

Abstract: 2SA1121 2SA1121SDTL-E 2SC2618 SC-59A 2sa112
Text: 1.95 1.05 0.3 Ordering Information Part Name 2SA1121SCTL-E 2SA1121SDTL-E Quantity 3000 , . 2SA1121 Silicon PNP Epitaxial REJ03G0636-0200 (Previous ADE-208-1008) Rev.2.00 Aug , ­55 to +150 Unit V V V mA mW °C °C 2SA1121 Electrical Characteristics (Ta = 25 , 100 10 Base to emitter voltage VBE - Note: 1. The 2SA1121 is grouped by hFE as follows. Grade , = ­3 V, IC = ­10 mA 2SA1121 Main Characteristics Typical Output Characteristics (1) ­100


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PDF
GNKL

Abstract: No abstract text available
Text: HITACHI 2SA1121 - SILICON PN P E P ITAXIAL _ _ LOW FREQUENCY AMPLIFIER Complementary pair with 2SC2618 I v .i» I2u J I ! I jJUgLfcKU ' 2.8.: s ì Hu J . .JLtA L ] Î. EmiMer 2. Base X Cnifccior (Dimension* in mm) U '! U- (MPAK) A B SO LU T E MAXIMUM RATiNGS (Ta=25< 'C) Item Collector to base voltage ¡Symbol i Vcso 2SA1121 -35 -35 -4 -500 150 ISO -55 to +150 Unit V V V mA mW 5 C à 6 MAXIMUM COLLECTO R DISSIPATION C URVE Collector to emitter voltage


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PDF 2SA1121 2SC2618 -10mA -500mA 2SA673. GNKL
2011 - Not Available

Abstract: No abstract text available
Text: 1.95 0.3 Ordering Information Orderable Part Number 2SA1121SCTL-E 2SA1121SDTL-E 2SA1121SCTL-H 2SA1121SDTL-H Note: 3000 Quantity Shipping Container 178 mm Reel, 8 mm Emboss Taping For some grades , Preliminary Datasheet 2SA1121 Silicon PNP Epitaxial Application Low frequency amplifier , R07DS0271EJ0300 Rev.3.00 Mar 28, 2011 Page 1 of 4 2SA1121 Preliminary Electrical Characteristics (Ta , voltage V Note: 1. The 2SA1121 is grouped by hFE as follows. Grade C D Mark hFE SC 100 to 200 SD 160


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PDF 2SA1121 2SC2618 R07DS0271EJ0300 REJ03G0636-0200) PLSP0003ZB-A R07DS0271EJ0300
2011 - Not Available

Abstract: No abstract text available
Text: Number 2SA1121SCTL-E 2SA1121SDTL-E 2SA1121SCTL-H 2SA1121SDTL-H Note: Quantity 3000 Shipping , Preliminary Datasheet 2SA1121 R07DS0271EJ0300 (Previous: REJ03G0636-0200) Rev.3.00 Mar 28 , mA mW ° C ° C Page 1 of 4 2SA1121 Preliminary Electrical Characteristics (Ta = , , IC = –500 mA (Pulse test) VCE = –3 V, IC = –10 mA Note: 1. The 2SA1121 is grouped by hFE , .3.00 Mar 28, 2011 Page 2 of 4 2SA1121 Preliminary Main Characteristics Typical Output


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PDF 2SA1121 R07DS0271EJ0300 REJ03G0636-0200) 2SC2618 PLSP0003ZB-A R07DS0271EJ0300
HS 153 SP

Abstract: 2SA1152 2SA1115 G 2sc2720 2sc2681 2SA1138 2SA1154 2sc2676 2SC2719 2SA1080
Text: -0.5 -0.05 2SA1115 =M LF A -50 -50 -0. 2 0. 3 -0.1 -50 90 800 -6 -0.001 -0. 3 -0.1 -0.01 2SA1121 Hi , =100Hz Rg=10K (TO-92S) ECB 2SA1115 2SC2618 (SC—59 (MPAK) ) EBC 2SA1121 (SC


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PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1115 G 2sc2720 2sc2681 2SA1138 2SA1154 2sc2676 2SC2719 2SA1080
2SA1019

Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SB549 2SA1115 F 2SB641 r 2sb618a
Text: 2SB1229 2SB 624 - B 8 2SB815 2SA1298 2SA1121 2SB970 2SA1365 2SB1197K 2SB 625 fé T 2SB1371


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PDF 2SB764 2SA505 2SA673A 2SA684 2SA935 2SA879 2SB649 2SB1086A 2SB817 2SB775 2SA1019 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SB549 2SA1115 F 2SB641 r 2sb618a
2SA970

Abstract: 2SB927 2SA101S 2sa977 2SA933LN 2SA1783 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
Text: 2SA 1162,- 2SA1781 2SA812 2SA1121 2SB709 2SA1235 2SA1037K 2SA 1163 - x s 2SA1257 2SA1247 2SB814


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PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA970 2SB927 2SA101S 2sa977 2SA933LN 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SA684 2SB737 2SB927 2SB686 761-B
Text: - 51 - s « Type No. tt « Manuf. SANYO TOSHIBA a a NEC B il HITACHI « ± il FUJITSU fé T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SB 733 B B 2SB927 2SB739 2SB1010 2SB 734 , s a 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2Sfl 736 s a 2SA133S 2SA1313 2SA1121 2SA1366 2SB1198K 2SB 736A s a 2SA1338 2SB710 2SB1198K 2SB 737 □ —A 2SA984 2SB 738 B ÌL 2SB927 2SA966 2SB733 2SA1282 2SB1010 2SB 739 - b ÌL 2SB927 2SA966 2SB733 2SA1282 2SB1010 2SB 740 B ÌL 2SB764 2SA817


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PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
2SA1163

Abstract: 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
Text: - 76 - Ü s Type No. a « Manuf. H # SANYO S S TOSHIBA B 8 NEC 0 iL HITACHI « ± a FUJITSU fô T MATSUSHITA H S MITSUBISHI □ — A ROHM 2 SB 1578 a m 2SB1575 2S6 1579 fâ T 2SA1825 2 SB 1580 □ -A 2SB1576 2 SB 1581 s m 2SA1896 2SA1736 2SB1574 2SB 1582 fë T 2SA1T53 2SAU82 2SA1121 2SA1366 2SB 1583 fò T 2SA1257 2SA1163 2SA1468 2SB 1584 fò T 2SA1753 2SA1182 2SB831 2SA1355 2SB 1585 fô T 2SA1753 2SA1182 2SB831 2SA1365 2SB 1586 yyry 2SB1555 2SB1400


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PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SA1736 2SB1576 2SA1825 2SA1366 2SA1257 2SA1121 2SB1575 2SB1574
Not Available

Abstract: No abstract text available
Text: Product specification 2SA1121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to


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PDF 2SA1121 OT-23
2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2sa1115 2SA170B 2SA1383 2SB709 2Sa1744 2SA1091
Text: - 40 - Sì s Type No. tt S Manuf. H * SANYO K S TOSHIBA s a NEC 0 ÌL HITACHI m ± a FUJITSU fâ T MATSUSHITA H m MITSUBISHI □ — A BÖHM 2SA 1750 H # 2SA1156 2SA1110 2SA 1751 H # 2SA1383 2SA1535A 2SA 1752 H $ 2SA1383 2SA1535 2SA 1753 H if 2SA1182 2SA1464 2SA1121 2SB970 2SA1365 2SA 1755 ^ B iL 2SA170B 2SA1315 2SB984 2SA1674 2SA935 2SA 1757 . □ —A 2SA1469 2SB1016 2SA1741 2SB945 2SA 1758 □ -A 2SA1471 2SA1452 2SA1744 2SB947A 2SA 1759 □ —A 2SA1740


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PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2sa1115 2SA170B 2SA1383 2SB709 2Sa1744 2SA1091
2SA1301 TOSHIBA

Abstract: da 1191 2sa970 2SA904A Toshiba 2SB754 2Sa1173 2SB646 2SA1323 2SA1038 2SA1782
Text: 1182» » 2SA1338 2SB624 2SA1121 2SB710 2SA1036K 2SA 1183 X 3Ë 2SB897 2 SA 1184 ^ K s


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PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 2SA904A Toshiba 2SB754 2Sa1173 2SB646 2SA1323 2SA1038
1999 - Hitachi DSA002755

Abstract: No abstract text available
Text: 2SC2618 Silicon NPN Epitaxial Application · Low frequency amplifier · Complementary pair with 2SA1121 Outline 2SC2618 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 ­55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown


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PDF 2SC2618 2SA1121 Hitachi DSA002755
Not Available

Abstract: No abstract text available
Text: 2SC2618 Silicon NPN Epitaxial HITACHI Application · Low frequency amplifier · Complementary pair with 2SA1121 Outline MPAK 1. Emitter 2. Base 3. Collector 405 2SC2618 Absolute Maximum Ratings (Ta = 2 5 ° C ) item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature; Symbol VcBQ VcEO ^EBO lc Po Ratings 35 35 4 500 150 150 -55 t o +150 Unit V V V mA mW °C °C Tj


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PDF 2SC2618 2SA1121 2SC2618 2SC1213.
2SA1121

Abstract: 2SC1213 2SC2618
Text: 2SC2618 SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SA1121 _ jm* 3 -it^h , ,sn~ti ¡0.«|0»S ill i ¿! a er» \Q—02 \—f sJ T o ic'I 0-Oi 1. Emiiicr 2. b 3. Cullcciof tu (tvh) (MPAK) I ABSOLUTE MAXIMUM RATINGS (Ta=25*C) Item Symbol 2SC26I8 Unit Collector to bast voltage VCBO 35 I V Collector to emitter voltage Veto 35 V Emitter to base voltage Vkuu 4 V Collector current Ic 500 inA Collector power dissipation Pc 150 mW Junction temperature Ti


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PDF 2SC2618 2SA1121 2SC26I8 10jtA 500mA 150mA, 2SC1213. 2SA1121 2SC1213 2SC2618
toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: 2SA1037K 2SB 709A fâ T 2 SA 17 81 2SA1617 2SA1037K 2SB 710 _ fô T 2SB815 2SA1313 2SA1121 2


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
MARKING SB

Abstract: smd marking sc sot-23 2SA1121
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -35 V Collector to emitter voltage VCEO -35


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PDF 2SA1121 OT-23 MARKING SB smd marking sc sot-23 2SA1121
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