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2SA1110 TO-126 2SA1110 ECAD Model
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Karl Kruse GmbH & Co KG 2SA1110 5,000 - - - - - More Info

2SA1110 datasheet (19)

Part ECAD Model Manufacturer Description Type PDF
2SA1110 2SA1110 ECAD Model Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SA1110 2SA1110 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1110 2SA1110 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SA1110 2SA1110 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1110 2SA1110 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1110 2SA1110 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1110 2SA1110 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1110 2SA1110 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1110 2SA1110 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1110 2SA1110 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1110 2SA1110 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1110 2SA1110 ECAD Model Others Transistor Replacements Scan PDF
2SA1110 2SA1110 ECAD Model Panasonic SI PNP EPITAXIAL PLANAR Scan PDF
2SA1110 2SA1110 ECAD Model Panasonic Power Transistors - Silicon PNP Epitaxial Planar Type Scan PDF
2SA11100Q 2SA11100Q ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP HF 120VCEO .5A TO-126 Original PDF
2SA1110P 2SA1110P ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA1110Q 2SA1110Q ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA1110R 2SA1110R ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
2SA1110S 2SA1110S ECAD Model Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF

2SA1110 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1110

Abstract: 2SC2590
Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of , ) *: Without heat sink TC=25 Inchange Semiconductor Product Specification 2SA1110 Silicon PNP , Product Specification 2SA1110 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power


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PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2005 - 2SA1110

Abstract: 2SC2590
Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current , =25 JMnic Product Specification 2SA1110 Silicon PNP Power Transistors CHARACTERISTICS Tj , 100 30 200 pF MHz JMnic Product Specification 2SA1110 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1110 Silicon


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PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2SA1110

Abstract: 2SC2590
Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of , heat sink TC=25 SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power , Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA1110 SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors 4 -


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PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2SA1110

Abstract: 2SC2590
Text: AOK AOK Semiconductor Silicon PNP P o w er Transistors P rod uct S p ecificatio n 2SA1110 D E S C R IP T IO N · W ith T O - 1 2 6 p a c k a g e · C o m p le m e n t to typ e 2SC2590 · E x c , d S YM BO L PARAM ETER CONDITIONS MIN TYP. MAX UNIT P rod uct S p ecificatio n 2SA1110 V
2SA1110 8 .5 M A X 2 .8 M A X J L 4 . 6 ± 0 .5 Ä 1 2 3 Fig.2 O u tlin e d im , Transistors P ro d u c t S p ecificatio n 2SA1110 400 -ït'A -Ig-io T*=26XÎ / / / i i í soo < _o


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PDF 2SA1110 2SC2590 2SA1110 2SC2590
2SA1110

Abstract: 2SC2590
Text: Power Transistors 2SA1110 2SA1110 Silicon PNP Epitaxial Planar Type AF Power Amplifier Complementary Pair with 2SC2590 ■Features • Good linearity of DC current gain (hFE) • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590 Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage VcBO -120 V Collector-emitter voltage VcEO -120 V , €” This Material Copyrighted By Its Respective Manufacturer Power Transistors 2SA1110 1.6 1.4 Pc-Ta


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PDF 2SA1110 2SC2590 O-126 2SA1110 2SC2590
Not Available

Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1110 DESCRIPTION • Collector-Emitter Breakdown VoltageV (B R)CEO=-120V(Min) • Good Linearity of hFE PIN 1. BETTER 1. COLLECTOR 3. BASE TO-126 package • Complement to Type 2SC2590 APPLICATIONS • Designed for audio , orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1110 ELECTRICAL


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PDF 2SA1110 -120V O-126 2SC2590 -100u -300mA; -30mA -500mA;
2SA1110

Abstract: 2SC2590
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL scs .i PARAMETER ww VALUE UNIT -120 V -120 , Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 ELECTRICAL


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PDF 2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590
2SC2590

Abstract: hlk2 2SA1110 HLK-2 100w npn
Text: Power Transistors 2SÇ2590 2SC2590 Silicon NPN Epitaxial Planar Type AF Power Amplifier Complementary Pair with 2SA1110 ■Features • Very good linearity of DC current gain (hFE) • High transition frequency (fr) • Optimum for the driver of 40~100W in complementary pair with 2SA1110 ■Absolute Maximum Ratings (Ta=25°C) Package Dimensions Item Symbol Value Unit Collector-base voltage Veno 120 V Collector-emitter voltage Vm. 120 V Emitter-base voltage VJ.;bo 5 V Peak collector


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PDF 2SC2590 2SA1110 2SC2590 hlk2 2SA1110 HLK-2 100w npn
2000 - 2SC2590

Abstract: No abstract text available
Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 I Features · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · A complementary pair with 2SA1110 , is optimum for the driverstage of a 40 W to 60 W output amplifier · TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 ­0.1 3.16±0.1 3.8±0.3 11.0±0.5


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PDF 2SC2590 2SA1110 2SA1110, O-126B 2SC2590
2sa970

Abstract: 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1207 2SA1038 2SA904A 2sa949
Text: 2SA970 2SA1142 2SA1110 2SA1285 2SA1482 2SA 899 ^ «±a 2SA1209 2SA970 2SA1142 2SB648A 2SA1110


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1038 2sa949
2SB415

Abstract: sanyo 2sb509 NEC B 536 2SB557 TOSHIBA 2SB631 2sb631 hitachi 2sa966 2SA1284 2SA934 2SB661
Text: 2sb631 2sa815 2sa985 2sb647 2sa1110 2sb1086 2sb 528 - -. m 2sb631 2sa814 2sb546a 2sb647 2sa1110


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PDF 2sb507 2sb596 2sa1069 2sb856 2sb1291 2sb508 2sb632 2SB415 sanyo 2sb509 NEC B 536 2SB557 TOSHIBA 2SB631 2sb631 hitachi 2sa966 2SA1284 2SA934 2SB661
2000 - 2SA1110

Abstract: 2SC2590
Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 ­0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · A complementary pair with 2SA1110 , is optimum for the driverstage of a 40 W to 60 W output amplifier · TO-126B package which requires no insulation plate for installation


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PDF 2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590
2SA1110

Abstract: 2SC2590 2SS-020
Text: Power T ransistors 2SA1110 2SA1110 Silicon PNP Epitaxial Planar Type AF Power Amplifier Complementary Pair with 2SC2590 Features · G ood lin e a rity of D C c u r re n t gain (I if e ) · H igh tra n s itio n fre q u e n c y (fT) · 4 0 ~ 6 0 W o u tp u t d riv e r in c o m p le m e n ta ry p a ir w ith 2S C 2590 Package Dimensions Absolute Maximum Ratings (T a = 25 °C ) Ite m C ollector-base voltage C ollector-em itter voltage E m itter-b ase voltage P eak collector cu rren t Collector cu rren t


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PDF 2SA1110 2SC2590 200MHz 2SA1110 2SC2590 2SS-020
2SA1110

Abstract: 2SC2590
Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 ­0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · A complementary pair with 2SA1110 , is optimum for the driverstage of a 40 W to 60 W output amplifier · TO-126B package which requires no insulation plate for installation


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PDF 2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590
2SB1545

Abstract: 2SA1309 2SA1776 2sa1015 2sa1115 2SA170B 2SA1383 2SB709 2Sa1744 2SA1091
Text: - 40 - Sì s Type No. tt S Manuf. H * SANYO K S TOSHIBA s a NEC 0 ÌL HITACHI m ± a FUJITSU fâ T MATSUSHITA H m MITSUBISHI □ — A BÖHM 2SA 1750 H # 2SA1156 2SA1110 2SA 1751 H # 2SA1383 2SA1535A 2SA 1752 H $ 2SA1383 2SA1535 2SA 1753 H if 2SA1182 2SA1464 2SA1121 2SB970 2SA1365 2SA 1755 ^ B iL 2SA170B 2SA1315 2SB984 2SA1674 2SA935 2SA 1757 . □ —A 2SA1469 2SB1016 2SA1741 2SB945 2SA 1758 □ -A 2SA1471 2SA1452 2SA1744 2SB947A 2SA 1759 □ —A 2SA1740


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PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2sa1115 2SA170B 2SA1383 2SB709 2Sa1744 2SA1091
DF RV transistor

Abstract: an7060 MN6626 7337n A1310 2SC3312 2SA1310 2SD1449 2sd1975
Text: peripheral c ir cuits in this block diagram. AN7352S AN73ii:iS 1 E le c tro nic V o lum e / 2SA1110


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PDF N6626 N6475A N1870 PNA4601 A1310 2SC3312 AN7060 AX7062N 2SB1371, 2SD1975. DF RV transistor MN6626 7337n 2SC3312 2SA1310 2SD1449 2sd1975
2005 - 2SC2590

Abstract: 2SA1110
Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun


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PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110
2SB1013

Abstract: 2S897 2SB1315 2SB1306 2SB679 2SA1307 2SA1431 1318J 2sb631 hitachi 2SB747
Text: 2SB1050 2SB 1308 j □ —A 2SB13Û2 2SB1073 2SB 1309 □ —A 2SB631 2SA1358 2SB548 2SA1110


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PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SB1306 2SB679 2SA1307 1318J 2sb631 hitachi 2SB747
2SC2590

Abstract: 2SA1110
Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base


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PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110
NEC 1357

Abstract: 2sa1175 2SB710 K 1358 2SA937 2SA914 2SA1091 2SA953 2SA1309A 2sa1361
Text: SA 1360 , 2S A 1361 2S A 1 362 2 SA 1363 2 SA12 20 2SB744 2SA1142 2SA1110 2SA1096 2SA914


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PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 K 1358 2SA937 2SA1091 2SA953 2sa1361
30ma 40v npn

Abstract: SEM 200 ic driver IC03a 2SA1110 2SC2590
Text: Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base E SEM NG


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PDF 2SC2590 O-126 2SA1110 150mA 200MHz 30ma 40v npn SEM 200 ic driver IC03a 2SA1110 2SC2590
2SC2633

Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Text: PANASONIC INDL/ELEKiSENI} 72C D | b^32âS4 OODÔÔOâ 1 | h^yvx?_ T 3 3 -17 2SA111Q 2SA1110 ij =i y PNP itÎ^y^U-tffVSi PNP Epitaxial Planar ftfl!âfc«2jiaiIE/AF Power Amplifier 2SC2590 t a > y U * > $ 'J /Complementary Pair with 2SC2590 ■« ^/Features • a iim.ffi.mmm h^t^ii Amth -c ± / Exceptionally good linearity of hFE • h y > >* i- a >ffiìk$C f-r^'B^o/High fT • 2SC2590 , 2SA1110 1.6 1.4 s 1.2 o Ck 1.0 * S 0.8 Is i 0.6 n (fr 0.4 0.2 0 Pe-Ta


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PDF 2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
2SC2590

Abstract: WJ 3 2SA1110 hlk-2
Text: Power Transistors 2SC2590 2SC2590 Silicon NPN Epitaxial Plànar Type AF Pow er Am plifier C om plem entary Pair with 2 S A 1 1 1 0 Features · V ery good linearity of DC c u rre n t gain (I if e ) P ackage Dim ensions · High transition frequency (f-r) · Optimum for the driver of 40~100W 2SA1110 in com plem entary pair with - Absolute M axim um Ratings (T a = 2 5 °C ) Item Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current


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PDF 2SC2590 2SA1110 2SC2590 WJ 3 2SA1110 hlk-2
2SA1949

Abstract: 2SC5221 2SD2407 2SB1526 2SA1951 2SD2411 2SD2412 2SC1398 2sb1504 2SC5224
Text: 2SD2412 300 0.75 <1 1.0 200 40 -250 0.3 Audio drive f 2SA1110 I2SC2590 120 0.5 1.0 0.3 30


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PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 f2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SD2407 2SB1526 2SA1951 2SD2411 2SD2412 2SC1398 2sb1504 2SC5224
Not Available

Abstract: No abstract text available
Text: 1.0 f 2SB1545 1 2SD2365 0.5 100 ( 2SA794/A 2SD2341 A 2SD2412 { 2SA1110 I2SC2590


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PDF O-126 O-202 T0-220 O-220F 2SC1398A 2SB1543 2SB1416 2SB1417 12SD2363 12SD2136
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