The Datasheet Archive

SF Impression Pixel

Search Stock

Siemens
52SA109688 SEL.SW. 52SA109688 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation 52SA109688 Bulk 0 1 $153.72 $146.04 $146.04 $146.04 $146.04 More Info
ISC
2SA1096 TO-126 2SA1096 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Karl Kruse GmbH & Co KG 2SA1096 5,000 - - - - - More Info
ISC
2SA1096A TO-126 2SA1096A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Karl Kruse GmbH & Co KG 2SA1096A 5,000 - - - - - More Info

2SA1096 datasheet (30)

Part ECAD Model Manufacturer Description Type PDF
2SA1096 2SA1096 ECAD Model Panasonic Transistor, Silicon PNP epitaxial planar type Original PDF
2SA1096 2SA1096 ECAD Model Panasonic Silicon NPN epitaxial planar type(For low-frequency power amplification) Original PDF
2SA1096 2SA1096 ECAD Model Panasonic Silicon PNP epitaxial planar type Original PDF
2SA1096 2SA1096 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1096 2SA1096 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1096 2SA1096 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1096 2SA1096 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1096 2SA1096 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1096 2SA1096 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1096 2SA1096 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1096 2SA1096 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1096 2SA1096 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1096 2SA1096 ECAD Model Panasonic Power Transistors - Silicon PNP Epitaxial Planar Type Scan PDF
2SA10960Q 2SA10960Q ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 50VCEO 2A TO-126 Original PDF
2SA10960R 2SA10960R ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 50VCEO 2A TO-126 Original PDF
2SA1096A 2SA1096A ECAD Model Panasonic Silicon NPN epitaxial planar type(For low-frequency power amplification) Original PDF
2SA1096A 2SA1096A ECAD Model Panasonic Transistor, Silicon PNP epitaxial planar type Original PDF
2SA1096A 2SA1096A ECAD Model Panasonic Silicon PNP epitaxial planar type Original PDF
2SA1096A 2SA1096A ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1096A 2SA1096A ECAD Model Others Cross Reference Datasheet Scan PDF

2SA1096 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA1096

Abstract: 2SA1096A
Text: AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A , emitter -70 V VCEO Collector- emitter voltage 2SA1096 Open base -50 V 2SA1096A -60 Vebo Emitter-base , : aoksemic@msn.com 1/5 AÜK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA1096 2SA1096A , Collector-emitter 2SA1096 lc=-2mA; lB=0 -50 V breakdown voltage 2SA1096A -60 V 2SA1096 2SA1096A PACKAGE OUTLINE E-mail: aoksemic@msn.com 2/5 8.5MAX 21 o -H


OCR Scan
PDF 2SA1096 2SA1096A O-126 2SC2497/2SC2497A 2SA1096A 100x2
2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA1358 2SA854 2SA933 2SA1096 2SA1339 2SA748
Text: ROHM 2SA 512-' m S 2SA1358 2SA1096 2SB1086 2 SA 513 ^ JK S 2SA1358 2SA1096 2SA934 2SA 516 S S 2SA1358 2SA1096 2SB1086 2SA 516A Ä S 2SA1358 2SB1086 2SA 517 Ä S 2SA1015 , ® 2SA1309A 2SA933 2SA 523 *±a 2SA1096 2SA854 2SA 523A 2SA854 2SA 524 *±a 2SA1096 2SA933 2SA 52 6 ^ V—— 2SA1096 2SA 527 V—— 2SA748 2SA 528 y—— 2SA748 , 2SA1309A 2SA854 2SA 535¿ H 2SA1096 2SA935 2SA 536 . = # 2SA984 2SA1096 2SA935 2SA 537 (H)J


OCR Scan
PDF 2SA1358 2SA1096 2SB1086 2SA934 2SA1015 2SB1041 2SA935 2SA934 2SA1358 2SA854 2SA933 2SA1096 2SA1339 2SA748
2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA985 NEC 2SA385 2SA1096 2SA494
Text: 2SA1015 2SA 480 y- — •7ÇA1 1 2SA673 ■7^ A 099 2SA 482 S 2 2SA1358 2SA1096 2SA934 2SA 483 K 2 2SA940 2SB1186A 2SA 484 t- X 2 2SA1358 2SA1096 2SB1212 2SA 485 S 2 2SA1358 2SA1096 2SB1212 2SA 486 . S 2 2SA1358 2SB1212 2SA 489 . S 2 2SB596 2SA985 2SB941 2SB1334 2SA , 2SA1096 2SA933 2SA 496 Ä 2 2SA1356 2SB548 2SA1096 2SB1009 2SA 497 S 2 2SB560 2SA965 2SB647 2SA1096 2SA935 2SA 498 . X 2 2SA965 2SB647 2SA1096 2SA935 2SA 499 ^ K 2 2SA1096 2SA933 2SA


OCR Scan
PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA985 NEC 2SA1096 2SA494
2005 - 2SA1096

Abstract: 2SA1096A Jmnic
Text: JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors , Specification 2SA1096 2SA1096A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , 120-220 2 -70 V 80 220 JMnic Product Specification 2SA1096 2SA1096A Silicon , Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 4 JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 5 JMnic


Original
PDF 2SA1096 2SA1096A O-126 2SC2497/2SC2497A 2SA1096 200MHz 2SA1096A Jmnic
2SA109

Abstract: 2SA1096 2SC249 semiconductor product 2SA1096A Transistors POWER TRANSISTORS
Text: Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power , A1 heat sink Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP , Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors , 2SA1096 2SA1096A Silicon PNP Power Transistors 4 Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 5 -


Original
PDF 2SA1096 2SA1096A O-126 2SC2497/2SC2497A 2SA1096 200MHz 2SA109 2SC249 semiconductor product 2SA1096A Transistors POWER TRANSISTORS
2sa1015

Abstract: 2SA673 2sa733 2SA935 2SA953 2SA572 564a 2SA562 2SA933 2SA930
Text: 2SA935 2SA 552 B 'S 2SA1339 2SA1096 2SA1638 2SA 553 s±a 2SA1096 2SA854 2SA 564 *±S 2SA1096 2SA854 2SA 555 s±a 2SA1015 2SA953 2SA1127 2SA854 2SA 556 «±a 2SA1015 2SA953 2SA1309A , 2SA 559A «±a 2SA1309A 2SA 560 ^ s: s 2SB560 2SA965 2SA1096 2SA935 2SA 561 36: s , 2SA1015 2SA733 2SA673 2SA1309A 2SA999 2SA933 2SA 565 B ÎL 2SA673A 2SA1096 2SA854 2SA 566 ^ B ÎL , » 2SA984 2SA1015 2SA953 2SA673A 2SA1309A 2SA935 2SA 571 _ B 1 2SA1729 2SA1096 2SA 572 ^


OCR Scan
PDF 2SA778AK 2SA1309A 2SA562 2SA673 2SA933 2SA984 2SA1015 2sa1015 2SA673 2sa733 2SA935 2SA953 2SA572 564a 2SA562 2SA933 2SA930
2003 - Not Available

Abstract: No abstract text available
Text: °C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SA1096 (Base open) 2SA1096A , (Emitter open) Collector-emitter voltage (Base open) 2SA1096 2SA1096A ICBO ICEO IEBO hFE VCE(sat) VBE(sat , SJD00007BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1096 , 2SA1096A PC , SJD00007BED This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1096 , 2SA1096A Safe , This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA1096


Original
PDF 2002/95/EC) 2SA1096, 2SA1096A 2SC2497, 2SC2497A 2SA1096 2SA1096A
2SA1096

Abstract: 2SA1096A 2SA109
Text: SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power , SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors , 2SA1096A SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power , 2SA1096 2SA1096A - , Collector-base voltage VCEO CONDITIONS Open emitter Collector- emitter voltage 2SA1096 UNIT


Original
PDF 2SA1096 2SA1096A O-126 2SC2497/2SC2497A 2SA1096 200MHz 2SA1096A 2SA109
2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A 2SA109
Text: Power Transistors 2SA1096 , 2SA1096A Silicon PNP Epitaxial Planar Type AF Power Amplifier , · TO-126 package, no insulator n eeded when fixing to a heat sink 2SA1096 , 2SA1096A Package , 2SA1096 2SA1096A Sym bol V CBO V CKO V ebo V alue -7 0 -5 0 -6 0 -5 -3 -2 1.2*' 5" 150 - 5 5 - + 150 , itter saturation voltage Transition frequency Collector output capacitance 2SA1096 2SA1096A I kho , (V) 2 sai 096 , 2 sai o ? 6 a Power Transistors Area of safe operation (ASO) 2SA1096


OCR Scan
PDF 2SA1096 2SA1096A 2SC2497, 2SC2497A O-126 2SA1096, 2SA1096 2SA1096A 2SC2497 2SC2497A 2SA109
EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Text: Power Transistors 2SA1096 , 2SA1096A 2SA1096 , 2SA1096A Silicon PNP Epitaxial Planar Type AF Power , - 2SA1096 VcKO Ic=-2inA, IB=0 -50 V emitter voltage 2SA1096A -60 DC current gain hKE* Vce=-5V, Ic = , Transistors 2SA1096 , 2SA1096A Pc-Ta IC-VCE VcE(Mt)-le £ 5 1 ) 2 ) With Al h With. • It at s out 1 K»xl , Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage VcBO -70 V Collector- 2SA1096 VcKO -50 V emitter voltage 2SA1096A -60 V Emitter-base voltage Vebo -5 V Peak collector current Ici' -3 A


OCR Scan
PDF 2SA1096, 2SA1096A 2SC2497, 2SC2497A O-126 2SA1096 EAt-11 2SC2497 2SC2497A
2003 - 2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Text: Power Transistors 2SA1096 , 2SA1096A Silicon PNP epitaxial planar type For low-frequency power , 2003 SJD00007BED 1 2SA1096 , 2SA1096A IC VCE VCE(sat) IC -4 IB = -50 mA 1.2 -3 , ) 2SA1096 , 2SA1096A Safe operation area -10 Single pulse TC = 25°C Collector current IC (A) ICP , the heat sink 16.0±1.0 Features 11.0±0.5 3.16±0.1 Collector-emitter voltage 2SA1096 (Base open) 2SA1096A Emitter-base voltage (Collector open) -50 VCEO 0.75±0.1 V -60 1


Original
PDF 2SA1096, 2SA1096A 2SC2497, 2SC2497A 2SC2497 O-126B 2SA1096 2SA1096 2SA1096A 2SC2497A
Not Available

Abstract: No abstract text available
Text: / d φ 3.16±0.1 Collector-emitter voltage 2SA1096 (Base open) 2SA1096A VCEO , voltage (Base open) 2SA1096 2SA1096A Conditions VCBO IC = −1 mA, IE = 0 VCEO IC = , 2SA1096 , 2SA1096A IC  VCE VCE(sat)  IC −4 IB = −50 mA −3 Collector current IC (A , 2SA1096 , 2SA1096A Safe operation area Single pulse TC = 25°C t = 10 ms t=1s − 0.1 â , This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA1096


Original
PDF 2002/95/EC) 2SA1096, 2SA1096A 2SC2497, 2SC2497A
2sa1015

Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
Text: ♦ * * * * « » * * * * * * * ♦ * * * * * * * * m € Type No. tt « Manuf. E. ft SANYO je s TOSHIBA b a NEC b 4 HITACHI » ± a FUJITSU fô t MATSUSHITA H m MITSUBISHI o — A ROHM 2SA 580 *±a 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA 581 «±2 2SA1450 2SA1096 2SA935 2SA 594 —" 362- sa 2SA1015 2SA1096 2SA933 2SA 597 M Tí 2SA748 2SB1043 2SA 603 5 a 2SA1339 2SA1090 , 2SA 607 B a 2SB647 2SA1096 2SA935 2SA 608 - H m 2SA1015 2SA733 2SA673 2SA1309A 2SA999 2SA933


OCR Scan
PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
2003 - 2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Text: 3.16±0.1 -50 0.75±0.1 V Collector-emitter voltage 2SA1096 (Base open) 2SA1096A VCEO , /95/EC). 2SA1096 , 2SA1096A IC VCE VCE(sat) IC -4 IB = -50 mA 1.2 -3 Collector , product complies with the RoHS Directive (EU 2002/95/EC). 2SA1096 , 2SA1096A Safe operation area -10 , This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA1096 , 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to


Original
PDF 2002/95/EC) 2SA1096, 2SA1096A 2SC2497, 2SC2497A 2SC2497 O-126B 2SA1096 2SA1096A 2SC2497A
2002 - 2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Text: Power Transistors 2SA1096 , 2SA1096A Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 ­0.1 , 2SA1096 Collector to emitter voltage -60 2SA1096A Forward current transfer ratio * VCE = , 1 2SA1096 , 2SA1096A 5 IB = -50 mA (1) 4 3 2 (2) 1 0 VCE(sat) IC TC = , Ambient temperature Ta (°C) 2SA1096 , 2SA1096A Area of safe operation (ASO) -10 Collector current , Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating VCBO -70 -50 V 2SA1096


Original
PDF 2SA1096, 2SA1096A 2SC2497 2SC2497A 2SA1096 O-126B-A1 2SA1096 2SA1096A 2SC2497A
2SA1096

Abstract: 2SC2497
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 APPLICATIONS ·Designed for low-frequency power amplification .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO , Power Transistor 2SA1096 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL


Original
PDF 2SA1096 2SC2497 200MHz 2SA1096 2SC2497
2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Text: 2SA1096 (Base open) 2SA1096A 0.75±0.1 at io n. Parameter Collector-base voltage (Emitter , with the RoHS Directive (EU 2002/95/EC). 2SA1096 , 2SA1096A IC VCE VCE(sat) IC -4 IB = , 2002/95/EC). 2SA1096 , 2SA1096A Safe operation area -10 Single pulse TC = 25°C Collector , This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA1096 , 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to


Original
PDF 2002/95/EC) 2SA1096, 2SA1096A 2SC2497, 2SC2497A O-126B-A1 2SA1096 2SA1096A 2SC2497 2SC2497A
Not Available

Abstract: No abstract text available
Text: J.E.\i£,u iJ-'ioaueti, line. {s TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1096 DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo= -50V (Min) • Good Linearity of hFE 1 • Complement to Type 2SC2497 PIN 1.BMITTER 2.COLLECTOR 3. BASE , Silicon PNP Power Transistor 2SA1096 ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified


Original
PDF 2SA1096 2SC2497 O-126 200MHz
2SC2497

Abstract: 2SC2497A
Text: Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type 2SA1096 /A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage CHA IN VALUE UNIT 70


Original
PDF 2SC2497 2SC2497A O-126 2SA1096/A 2SC2497 200MHz 2SC2497A
HS 153 SP

Abstract: 2SA1152 2SA1115 G 2sc2720 2sc2681 2SA1138 2SA1154 2sc2676 2SC2719 2SA1080
Text: * 2SC2497 (TO—126(b) ECB 2SA1096 150* -5 -0. 5 55* 2SC2497A (TO—126(b>) ECB 2SA1096A 200* -10 , 150 -10 -0.02 -0.5 -1.2 -0.02 -0. 002 2SA1096 fâT LF PA -70 -50 -2 1.2 5» -1 -20 80 220 -5 -1 -1


OCR Scan
PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1115 G 2sc2720 2sc2681 2SA1138 2SA1154 2sc2676 2SC2719 2SA1080
2SA1146

Abstract: 2SB1200 2SB605 2SB764 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
Text: □—A 2SB986 2SB1217 2SA1096 2SB 1066 ^ □ —A 2SA1706 2SB744A 2SB819 2SB 1067 * 2 2SB1226


OCR Scan
PDF 2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB605 2SB793 2SB507 2SB1576 2SB1185 2SA874 2SB744 NEC
3sk287

Abstract: 3SK139 3sk247 3SK285
Text: * 2SC4545 amplifier ( 2SB1541 I 2SD2361 ( 2SA748 f 2SA1096 /A 12SC2497/A ( A2SB1574 IA2SD2408


OCR Scan
PDF 3SK144 3SK202 3SK241 3SK268 3SK286 2SC1215 2SC3354 2SC2636 3sk287 3SK139 3sk247 3SK285
2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1041 2SD2238 2SA1243 2SB564 2SB1067
Text: * H # 2SA968 2SA1111 2SB1085A 2SB 1038 „ B « 2SB824 2SA1096 2SB1370 2SB 1039 B m 2SB920


OCR Scan
PDF 2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1041 2SD2238 2SA1243 2SB564 2SB1067
2S897

Abstract: 2SA1178 2SA1225 2SA1586 2SA1243 2SA1628 2SA1371 2SA879 2SA1283 2SA1770
Text: - 66 - m « Type No. tt S Manuf. H m SANYO Ä S TOSHIBA B m HEC B ïr HITACHI « ± a FUJITSU Íí} T MATSUSHITA H m MITSUBISHI □ - A ROHM 2 SB 1216 H m 2SA1647 2SB930A 2 SB 1217 a m 2SB986 2SA1359 2SA1096 2SB1065 2SB 1218 85 T 2SA1622 2SA1586 2SA1628 2SB1218A 2SA1603 2SA1576 2SB 1218A fö t 2SA1586 2SA1603 2SA1576 2SB 1219 ^ ts T 2SA1745 2SA1588 2SA1577 2SB 1219A fö T 2SA1588 2SA1577 2SB 1220 ta t 2SA1587 ¿ortl57¡i 2SB 1221 ta t 2SA1371


OCR Scan
PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1586 2SA1243 2SA1628 2SA1371 2SA879 2SA1283 2SA1770
2SC2497

Abstract: 2SC2497A
Text: SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1096 /A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO CONDITIONS Open emitter Collector


Original
PDF 2SC2497 2SC2497A O-126 2SA1096/A 2SC2497 200MHz 2SC2497A
Supplyframe Tracking Pixel