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Renesas Electronics Corporation
2SA1052MCTR-E Transistor 2SA1052MCTR-E ECAD Model
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Rochester Electronics 2SA1052MCTR-E 37,666 1 $0.05 $0.05 $0.05 $0.04 $0.04 Buy Now
Renesas Electronics Corporation
2SA1052MDTR-E Transistor 2SA1052MDTR-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics 2SA1052MDTR-E 8,501 1 $0.05 $0.05 $0.05 $0.04 $0.04 Buy Now

2SA1052 datasheet (26)

Part ECAD Model Manufacturer Description Type PDF
2SA1052 2SA1052 ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 30V 0.1A 3MPAK Original PDF
2SA1052 2SA1052 ECAD Model Kexin Silicon PNP Epitaxial Original PDF
2SA1052 2SA1052 ECAD Model Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
2SA1052 2SA1052 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1052 2SA1052 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1052 2SA1052 ECAD Model TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original PDF
2SA1052 2SA1052 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SA1052 2SA1052 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1052 2SA1052 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1052 2SA1052 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1052 2SA1052 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1052 2SA1052 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1052 2SA1052 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
2SA1052 2SA1052 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1052 2SA1052 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1052B 2SA1052B ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 30V 0.1A 3MPAK Original PDF
2SA1052B 2SA1052B ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1052B 2SA1052B ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1052C 2SA1052C ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 30V 0.1A 3MPAK Original PDF
2SA1052C 2SA1052C ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF

2SA1052 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SA10

Abstract: 2SA1052
Text: 2SA1052 Silicon PNP Epitaxial HITACHI Application Low frequency amplifier Outline MPAK 123 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation , - 1. The 2SA1052 is grouped by hF Eas follows. B C D Mark hF E MB 100 to 200 MC 160 to 320 MD 250 to 500 See characteristic curves o f 2S A 10 3 1 124 HITACHI 2SA1052 O


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PDF 2SA1052 2SA1052 2SA10
2000 - 2SA1052

Abstract: No abstract text available
Text: products contained therein. 2SA1052 Silicon PNP Epitaxial ADE-208-1006A (Z) 2nd. Edition Mar , . Collector 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector , - ­0.75 V VCE = ­12 V, IC = ­2 mA Note: 1. The 2SA1052 is grouped by hFE as follows , VCE = ­12 V, IC = ­2 mA 2SA1052 Typical Output Characteristics (1) ­10 ­25 Collector Current , 2SA1052 DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current


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1999 - 2SA1031

Abstract: 2SA1052 Hitachi DSA00336
Text: 2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO ­30 V Collector to emitter voltage VCEO , 2SA1052 is grouped by hFE as follows. Grade B C D Mark MB MC MD hFE 100 to , mA 2SA1052 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150


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PDF 2SA1052 2SA1031 2SA1052 Hitachi DSA00336
2000 - Hitachi DSA0076

Abstract: 2SA1052
Text: 2SA1052 Silicon PNP Epitaxial ADE-208-1006A (Z) 2nd. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute , VCE = ­12 V, IC = ­2 mA Note: 1. The 2SA1052 is grouped by hFE as follows. Grade B C , = ­2 mA 2SA1052 Typical Output Characteristics (1) ­10 ­25 Collector Current IC (mA , ­0.2 ­0.4 ­0.6 ­0.8 ­1.0 Base to Emitter Voltage VBE (V) 3 2SA1052 DC Current


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PDF 2SA1052 ADE-208-1006A Hitachi DSA0076 2SA1052
2005 - 2SA1052

Abstract: No abstract text available
Text: 2SA1052MCTR-E 2SA1052MDTR-E 3000 Quantity Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For , 2SA1052 Silicon PNP Epitaxial REJ03G0634-0300 (Previous ADE-208-1006A) Rev.3.00 Aug , of 5 2SA1052 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown , Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1052 is grouped , 2SA1052 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics (1


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PDF 2SA1052 REJ03G0634-0300 ADE-208-1006A) PLSP0003ZB-A 2SA1052
1999 - Hitachi DSA002754

Abstract: 2SA1052
Text: 2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature , V V I C = ­10 mA, IB = ­1 mA VCE = ­12 V, IC = ­2 mA 1. The 2SA1052 is grouped by hFE as follows. 250 to 500 See characteristic curves of 2SA1031. 2 2SA1052 3 2SA1052 When


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PDF 2SA1052 Hitachi DSA002754 2SA1052
2005 - 2SA1052

Abstract: 2SA1052MCTR-E 2SA1052MDTR-E SC-59A PLSP0003ZB-A
Text: 1.05 0.3 Ordering Information Part Name 2SA1052MCTR-E 2SA1052MDTR-E Quantity 3000 , 2SA1052 Silicon PNP Epitaxial REJ03G0634-0300 (Previous ADE-208-1006A) Rev.3.00 Aug , Tstg ­55 to +150 °C Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1052 , emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1052 is grouped by hFE , = ­2 mA IC = ­10 mA, IB = ­1 mA VCE = ­12 V, IC = ­2 mA 2SA1052 Main Characteristics


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PDF 2SA1052 REJ03G0634-0300 ADE-208-1006A) PLSP0003ZB-A 2SA1052 2SA1052MCTR-E 2SA1052MDTR-E SC-59A PLSP0003ZB-A
2005 - 2SA1052

Abstract: 2SA1052MCTR-E 2SA1052MDTR-E SC-59A
Text: 1.05 0.3 Ordering Information Part Name 2SA1052MCTR-E 2SA1052MDTR-E Quantity 3000 , . 2SA1052 Silicon PNP Epitaxial REJ03G0634-0300 (Previous ADE-208-1006A) Rev.3.00 Aug , Tstg ­55 to +150 °C Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1052 , emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1052 is grouped by hFE , = ­2 mA IC = ­10 mA, IB = ­1 mA VCE = ­12 V, IC = ­2 mA 2SA1052 Main Characteristics


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Not Available

Abstract: No abstract text available
Text: 1C 2SA1052 -30 -30 -5 -IOC) Ik ("C ino ISO 150 -55 to +1SO i) T«i °C Amirimi , saturation voltage Base to emitter voltage The 2SA1052 is grouped by ht* »$ follo*ï. [ I _ - !


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PDF 2SA1052 2SA1031.
2SA1031

Abstract: 2SA1052 250TU
Text: HITACHI 2SA1052 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Lj-Lil W ' i iT3Q j 0.9S I 0.95 pr_] iQ—Qt 0.1 6 * n (MPAK) 1. Eniiiitf 2. Ba* i. Coiled« (Wincnjioo* in mm) I ABSOLUTE MAXIMUM RATINGS (Ta=258C) Item Symbol 2sa1052 Unit Collector to base voltage vcbo -30 v Collector to emitter voltage vceq -30 v Emitter to base voltage Vf,bo -5 v Collector current ic -i00 mA Emitter current Ir i00 mA Collector power dissipation Pc 150 mW Junction temperature Tj 150 °C Storage


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PDF 2SA1052 2sa1052 -10pA -10j4A, -10mA, 2SA1031. 2SA1031 250TU
Not Available

Abstract: No abstract text available
Text: 2SA1052 > v >□ p \ ¿ $ > * • n > 7 p M í x HITACHI MPAK 1. Emitter 2. Base 3. Collector (Ta = 25°C) im 2SA1052 3 1 / ^ ' ^ -X ® E ^C B O -30 V 3 1 / ^ í1 • i £ y ^ H E E VcEO -30 V x ia -5 V le -100 mA lE 100 mA Pe 150 mW Tj Tstg 150 °C —55~+150 °C ^E B O H U Í '* ® ® x S y ^ lla iE ÍS'n ¡nPm® H ita c h i ^ sem iconductor ^ ■4 Mclb E 0 S


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PDF 2SA1052
2005 - Not Available

Abstract: No abstract text available
Text: Information Part Name 2SA1052MCTR-E 2SA1052MDTR-E Quantity 3000 Shipping Container φ 178 mm Reel , developed or manufactured by or for Renesas Electronics. 2SA1052 Silicon PNP Epitaxial REJ03G0634 , Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1052 Electrical Characteristics (Ta = , VCE(sat) Base to emitter voltage VBE Note: 1. The 2SA1052 is grouped by hFE as follows. Grade C , €“2 mA 2SA1052 Main Characteristics Typical Output Characteristics (1) 300 –5 Collector


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Not Available

Abstract: No abstract text available
Text: 2SA1052 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain. @I(C) (A) (Test Condition)2.0m @V(CE) (V) (Test Condition)12 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C(obo) (Max


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PDF 2SA1052
2sa910

Abstract: UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
Text: a B 2SA1516 2SA1516 2SA1265N 2SA1400 2SA812 2SA1009A uPA75HA uPA75HA 2SA1052 _ * Ä Ü I H ;¥ =


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PDF 2SB1123 2SA1302 2SB986 2SA1705 2SA1249 2SA1768 2SA1552 2SA1256 2SB817 2sa910 UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
2SA1052

Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -30 V Collector to emitter voltage VCEO -30


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PDF 2SA1052 OT-23 2SA1052
Not Available

Abstract: No abstract text available
Text: Product specification 2SA1052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -30 V Collector to emitter voltage VCEO -30 V Emitter to


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PDF 2SA1052 OT-23
2SB638

Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SA1108 2SB793
Text: 2SB7Q3 2SB856 2SB942 2SB1S34 2SB 902 «j t 2SA1252 2SA1162 2SA812 2SA1052 2SA1235 2SB 905 h s


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PDF 2SA984 2SA562TM 2SA953 2SA673A 2SA720 2SB1142 2SA1217 2SB744 2SA715 2SA886 2SB638 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA1108 2SB793
toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: 2SB1289 2SB 708 b m 2SB1455 2SB1289 2SB 709 . fâ T 2SA1181 2SA1313 2SAB12 2SA1052 2SA1235


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
2SA1885

Abstract: 2SB1413 2SA1115 2SA1323 2sb946a 2SA1794 2SA1792 2SA1371 K 1833 2SB940
Text: H $ 2SB1219 2SA1603 2SA 1839 .E & 2SA1162 2SA1052 2SB902 2SA1235 2SA 1840 ID


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PDF 2SB892 2SA1020 2SB1433 2SB1434 2SA1532 2SA1792 2SB1413 2SA1793 2SB1447 2SB946 2SA1885 2SB1413 2SA1115 2SA1323 2sb946a 2SA1794 2SA1792 2SA1371 K 1833 2SB940
2sa10

Abstract: 2SA1015L 2SC1815L 2SA1012 2SA1035 2SA1015 2SA1016 2SA1016K 2SA1020 2SA1022
Text: -120 -0. 1 0.2 -0. 1 -120 200 700 -6 -0. 002 -0. 3 -0. Ol -0.001 2SA1052 Bit LF A -30 -30 -0. 1 0 , 2SA1049 (SC-59(MPAK) EBC 2SA1052 3000 -10 -0.015 . 0013* .0009* 1. 5 NF max 4dB f=lGHz


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PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2SA1035 2SA1015 2SA1016K 2SA1020 2SA1022
2000 - 2SA1337

Abstract: Hitachi DSA0076 2SA1052
Text: See characteristic curves of 2SA1052. 2 VCE = ­12 V, IC = ­2 mA 2SA1337 Collector Power


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PDF 2SA1337 ADE-208-1014A 2SA1337 Hitachi DSA0076 2SA1052
Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 transistor 2Sb 474 TRANSISTOR 2SC 635 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 2SB56I transistor 2SC460
Text: . 118 2SA1052


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PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 transistor 2Sb 474 TRANSISTOR 2SC 635 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 2SB56I transistor 2SC460
2000 - 2SA1029

Abstract: 2SA1030 2sa105 Hitachi DSA0076 2SA1052 2SC2308 2SC458 ADE-208-1004A
Text: 2SA1030 100 to 200 160 to 320 - See characteristic curves of 2SA1052. 2 VCE = ­12 V, I


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PDF 2SA1029, 2SA1030 ADE-208-1004A 2SC458 2SC2308 2SA1029 2SA1029 2SA1030 2sa105 Hitachi DSA0076 2SA1052 2SC2308 ADE-208-1004A
2sa1046

Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2SA1094 2sa1066 2SA1027 2SC2525 2SC2375
Text: 2SA1051A -160 -5 -15A 2SA1052 -30 -5 -100 2SA1053 2SA1054 2SA1055 2SA1056 2SA1057


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PDF 2SA1001 2SA1002 2SA1003 1602SA1004 2SA1005 2SA1006 2SA1006A 2SA1006B 2SA1007 2SA1096 2sa1046 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2SA1094 2sa1066 2SA1027 2SC2525 2SC2375
2000 - ADE-208-1022A

Abstract: Hitachi DSA0076 2sa161 2SA1052 2SA1617
Text: to 320 See charcteristic curves of 2SA1052 2 VCE = ­12 V, IC = ­2 mA 2SA1617


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PDF 2SA1617 ADE-208-1022A ADE-208-1022A Hitachi DSA0076 2sa161 2SA1052 2SA1617
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