The Datasheet Archive

2SA1030 datasheet (19)

Part ECAD Model Manufacturer Description Type PDF
2SA1030 2SA1030 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
2SA1030 2SA1030 ECAD Model Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
2SA1030 2SA1030 ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1030 2SA1030 ECAD Model Hitachi Semiconductor Silicon PNP Epitaxial - Low Freq Amplifier Scan PDF
2SA1030 2SA1030 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1030 2SA1030 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SA1030 2SA1030 ECAD Model Others The Japanese Transistor Manual 1981 Scan PDF
2SA1030 2SA1030 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1030 2SA1030 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1030 2SA1030 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1030 2SA1030 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
2SA1030 2SA1030 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SA1030 2SA1030 ECAD Model Others Cross Reference Datasheet Scan PDF
2SA1030B 2SA1030B ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 50V 0.1A 3TO-92 (1) Original PDF
2SA1030B 2SA1030B ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1030B 2SA1030B ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SA1030C 2SA1030C ECAD Model Hitachi Semiconductor TRANS GP BJT PNP 50V 0.1A 3TO-92 (1) Original PDF
2SA1030C 2SA1030C ECAD Model Renesas Technology Silicon PNP Epitaxial Original PDF
2SA1030C 2SA1030C ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF

2SA1030 Datasheets Context Search

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2SA1029

Abstract: 2SA1030 2SA103 2SA10
Text: 2SA1029, 2SA1030 Silicon PNP Epitaxial HITACHI Application · · Low frequency amplifier , 2SA1029, 2SA1030 Absolute Maximum Ratings (T a = 25°C) Item Collector to base voltage Collector to , 150 -5 5 to +150 2SA1030 -5 5 -5 0 -5 -100 100 300 150 -5 5 t o +150 Unit V V V mA mA mW °C °C , voltage Sym bol V (B R |C B O V (B R )C E O V (B R )E B O ^C B O I ebo hF E *' vB E 2SA1030 Max - - , output capacitance Note: Cob MHz pF 4.0 1. The 2SA1029 and 2SA1030 are grouped by hF E as


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PDF 2SA1029 2SA1030 2SC458 2SC2308 2SA1030 2SA103 2SA10
1999 - 2SA1029

Abstract: 2SA1030 2SC458 2SA1031 2SA1032 2SC2308 Hitachi DSA00340
Text: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application · Low frequency amplifier · Complementary , 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit , ­55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol , trnsfer ratio Note: hFE* 1 VCE(sat) Cob 1. The 2SA1029 and 2SA1030 are grouped by h FE as follows. B C D 2SA1029 100 to 200 160 to 320 250 to 500 2SA1030 100 to


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PDF 2SA1029, 2SA1030 2SC458 2SC2308 2SA1029 2SA1029 2SA1030 2SA1031 2SA1032 2SC2308 Hitachi DSA00340
2000 - 2SA1029

Abstract: 2SA1030 2SA1052 2SC2308 2SC458 2sc230
Text: products contained therein. 2SA1029, 2SA1030 Silicon PNP Epitaxial ADE-208-1004A (Z) 2nd. Edition , Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO , Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max , (sat) Cob 1. The 2SA1029 and 2SA1030 are grouped by h FE as follows. B C D 2SA1029


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1999 - 2SA1030

Abstract: 2SA1029 Hitachi DSA002754
Text: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application · Low frequency amplifier · Complementary pair with 2SC458 and 2SC2308 Outline 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25 , IC IE PC Tj Tstg 2SA1029 ­30 ­30 ­5 ­100 100 300 150 ­55 to +150 2SA1030 ­55 ­50 ­5 ­100 100 300 150 , CBO I EBO hFE* 1 2SA1030 Max - - - ­0.5 ­0.5 500 ­0.8 ­0.2 - 4.0 Min ­55 ­50 ­5 - - 100 - , 2SA1030 100 to 200 100 to 200 Cob 1. The 2SA1029 and 2SA1030 are grouped by h FE as follows. C 160 to


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PDF 2SA1029, 2SA1030 2SC458 2SC2308 2SA1029 2SA1029 2SA1030 Hitachi DSA002754
2005 - 2SA1029C

Abstract: 2SA1030 2SA1029
Text: Information Part Name 2SA1029BTZ 2SA1029CTZ 2SA1029DTZ 2SA1030BTZ 2SA1030CTZ 2500 Quantity Shipping Container , 2SA1029, 2SA1030 Silicon PNP Epitaxial REJ03G0633-0300 (Previous ADE-208-1004A) Rev.3.00 Aug , temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 ­30 ­30 ­5 ­100 100 300 150 ­55 to +150 2SA1030 ­55 , 2SA1029, 2SA1030 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage , 2SA1030 Min Typ Max ­55 - - ­50 ­5 - - 100 - - 200 - - - - - - - 280 3.3 - - ­0.5 ­0.5 320


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PDF 2SA1029, 2SA1030 REJ03G0633-0300 ADE-208-1004A) 2SC458 2SC2308 PRSS0003DA-A 2SA1029 2SA1029C 2SA1030 2SA1029
2000 - 2SA1029

Abstract: 2SA1030 2sa105 Hitachi DSA0076 2SA1052 2SC2308 2SC458 ADE-208-1004A
Text: 2SA1029, 2SA1030 Silicon PNP Epitaxial ADE-208-1004A (Z) 2nd. Edition Mar. 2001 Application , . Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO ­30 ­55 V Collector , 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions , MHz DC current trnsfer ratio Note: hFE* 1 VCE(sat) Cob 1. The 2SA1029 and 2SA1030


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PDF 2SA1029, 2SA1030 ADE-208-1004A 2SC458 2SC2308 2SA1029 2SA1029 2SA1030 2sa105 Hitachi DSA0076 2SA1052 2SC2308 ADE-208-1004A
2005 - 2SA1029

Abstract: 2SA1030 2SA1029D 2SC458 Box SC-43A PRSS0003DA-A 2SC458 2SC2308 2SA1029CTZ 2SA1029BTZ
Text: 2SA1029, 2SA1030 Silicon PNP Epitaxial REJ03G0633-0300 (Previous ADE-208-1004A) Rev.3.00 Aug , 2SA1029 ­30 ­30 ­5 ­100 100 300 2SA1030 ­55 ­50 ­5 ­100 100 300 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 150 ­55 to +150 °C °C 2SA1029, 2SA1030 Electrical , Gain bandwidth product VCE(sat) - fT 200 Item Symbol 2SA1030 Min Typ Max ­55 , Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows. B C D 2SA1029 100 to 200 160 to


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PDF 2SA1029, 2SA1030 REJ03G0633-0300 ADE-208-1004A) 2SC458 2SC2308 PRSS0003DA-A 2SA1029 2SA1029 2SA1030 2SA1029D 2SC458 Box SC-43A PRSS0003DA-A 2SC2308 2SA1029CTZ 2SA1029BTZ
2005 - 2SA1029

Abstract: 2SA1029BTZ 2SA1029CTZ 2SA1030 2SC2308 2SC458 PRSS0003DA-A SC-43A
Text: . 2SA1029, 2SA1030 Silicon PNP Epitaxial REJ03G0633-0300 (Previous ADE-208-1004A) Rev.3.00 Aug , 2SA1029 ­30 ­30 ­5 ­100 100 300 2SA1030 ­55 ­50 ­5 ­100 100 300 Unit V V V mA mA mW Tj Tstg 150 ­55 to +150 150 ­55 to +150 °C °C 2SA1029, 2SA1030 Electrical , Gain bandwidth product VCE(sat) - fT 200 Item Symbol 2SA1030 Min Typ Max ­55 , Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows. B C D 2SA1029 100 to 200 160 to


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toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Text: 2SB824 2SA490 2SB858 2SB1369 2SB 725 fé T 2SA1783 2 SA 1015 2SA733 2SA1030 2SA999 2SA1039 2SB 726 fô T 2SA1450 2SA988 2SA1030 2SA847A 2SA1039 2SB 727 (K) B iL 2SB886 2SB673 2SB950A


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PDF 2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
2SA1029

Abstract: 2SA1030 2SA1031 2SA1032 2SC2308 2SC458
Text: HITACHI 2SA1029, 2SA1030 SILICON PNP EPITAXIAL_ LOW FREQUENCY AMPLIFIER Complementary pair with 2SC458 and 2SC2308 1. limit ter 2. Cul lector 3. Bave (Dimensions in mm) (JEDEC TO-92) I ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol 2SA1Û29 2SA1030 Unit Collector (o base voltage VCBQ -30 -55 V Collector to emitter voltage VCEO -30 -50 V Emitter to base voltage Vebo -5 -5 V Collector current Ic -too -too m A Emitter curre tit ie too too mA Collector power dissipation Pc 300 300 mW


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PDF 2SA1029, 2SA1030 2SC458 2SC2308 2SA1030 -10pA. -18Vr 2SA1031 2SA1032. 2SA1029 2SA1032 2SC2308
2005 - Not Available

Abstract: No abstract text available
Text: 2SA1029CTZ 2SA1029DTZ 2SA1030BTZ 2SA1030CTZ Quantity 2500 Shipping Container Hold Box, Radial , developed or manufactured by or for Renesas Electronics. 2SA1029, 2SA1030 Silicon PNP Epitaxial , = 25°C) Symbol 2SA1029 2SA1030 Unit Collector to base voltage Item VCBO â , .3.00 Aug 10, 2005 page 1 of 5 2SA1029, 2SA1030 Electrical Characteristics (Ta = 25°C) 2SA1029 Item Symbol 2SA1030 Collector to base breakdown voltage V(BR)CBO Min –30 Typ â


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2SA1030

Abstract: No abstract text available
Text: HITACHI 2SA1029, 2SA1030 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complemeniary pair with 2SC458 and 2SC2308 .» M m « ¡.ntteL, r i "n "] TriïïV' "irJ . 9BHtn, 1 .| ° 3 ij 11 Me ( a ¡ i pA v 1 1 21 B 1 HiiüUcr 2 i\>Ucvif« X ÎW (D w k h ü o it » }« i n n o (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS 2SA1029 -3 0 2SA1030 -5 5 -5 0


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PDF 2SA1029, 2SA1030 2SC458 2SC2308 2SA1029 2SAI02V 2SA1031 2SA1032. 2SA1030
2sa970

Abstract: 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1207 2SA1038 2SA904A 2sa949
Text: 2SA1030 2SA564A 2SA933 2SA 904 - H « 2SAH37 2SA970 2SA988 2SA893 2SA1123 2SA904A 2SA1038 2SA 905 ^ H


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PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2SA988 2sa1015 2SA1142 2SA1038 2sa949
2SA1015

Abstract: 2SA733 2SA847A 2SA823 2SA933 2SA817 2SA968 2SA935 2SA1284 2SA970
Text: - 15 - Sk € Type No. a S Manuf. SANYO X TOSHIBA B « NEC 0 4 HITACHI » ± a FUJITSU <2 T MATSUSHITA H £ MITSUBISHI □ — A ROHM 2SA 816 K HE 2SA1358 2SA985 2SB647 2SA794 2SB1085 2SA 817 2SA984 2SA817 2SB647 2SA777 2SA1284 2SA935 2SA 818 ~ 2SA1145 2SB717 2SA 819 □ —A 2SA854 2SA 820 □—A 2SA1207 2SB1264 2SA 821 - □ —A 2SA1207 2SB1264 2SA 822 □ —A 2SAi207 2SA825 ZM308 ZdrtOSO 2SA 823 _ O—A 2SA1015 2SA733 2SA1030 2SA1309A 2SA933


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PDF 2SA1358 2SA985 2SB647 2SA794 2SB1085 2SA984 2SA817 2SA777 2SA1284 2SA1015 2SA733 2SA847A 2SA823 2SA933 2SA817 2SA968 2SA935 2SA970
2sc458

Abstract: 2SC2308 2SC2310 2SA1029 2SA1030 2SC23
Text: HITACHI 2SC458, 2SC2308 SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SA1029 and 2SA1030 (JEDEC TO-92) I ABSOLUTE MAXIMUM RATINGS (Ta=25ûC) Item Symbol 2SC458 2SC2308 55 Unii Collector to base voltage Veno 30 V Collector to emitter voltage Veto 30 50 V Emitter to base voltage Vebo 5 5 v Collector current Ic 1CX) 100 mA Emitter current ie -100 -100 mA Collector power dissipation Pc 200 200 mW Junction temperature Tj 150 150 °C Storage temperature Tsig -55 to+150 -55 to


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PDF 2SC458, 2SC2308 2SA1029 2SA1030 2SC458 2SC2308 2SC458 2SC23e 500ii 270Hz 2SC2310 2SA1030 2SC23
2sa10

Abstract: 2SA1015L 2SC1815L 2SA1012 2SA1035 2SA1015 2SA1016 2SA1016K 2SA1020 2SA1022
Text: -30 -0.1 0. 2 -0. 5 -18 100 500 -12 -0.002 0. 2 -0.01 -o.ooi 2SA1030 HÄ LF A -50 -55 -0. 1 0. 2 , 200 -12 -0. 002 4 2SC2308 TO-92JFJ ECB 2SA1030 200 -12 -0. 002 4 NF max 5dB f=120Hz/Rg


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PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2SA1035 2SA1015 2SA1016K 2SA1020 2SA1022
2SA1281

Abstract: 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
Text: 2SA1030 2SA1309A 2SA999 2SA933 2SA 1267 . «ami 2SA1182 2SA1048 2SA1350 2SA1309A 2SA1115 2SA933S 2


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PDF 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330 2SB792 2SA1226 2SA1022 2SA1733K 2SA1281 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
2sa1015

Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
Text: 2SB558 2SA 628 — H « 2SA1015 2SA733 2SA1029 2SA933 2SA 628A H * 2SA1015 2SA733 2SA1030


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PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 transistor 2Sb 474 TRANSISTOR 2SC 635 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 2SB56I transistor 2SC460
Text: . 115 2SA1030


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PDF 2SA673 2SA778 BB101C BB301M BB301C Transistor 2SA 2SB 2SC 2SD 993 395 pnp npn transistor 2SA 101 transistor 2Sb 474 TRANSISTOR 2SC 635 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 2SB56I transistor 2SC460
2SC458

Abstract: 2sc2308 2SC458 C 2SC458 B
Text: 2SC458,2SC2308 Silicon NPN Epitaxial HITACHI Application · · Low frequency am plifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) I I III i 3 2 1. Emitter 2. Collector 3. Base u 1 267 2SC458,2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature iE Pc Tj Tstg Symbol VcBO VcEO ^EBO


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PDF 2SC458 2SC2308 2SA1029 2SA1030 2SC2308 2SC458, 2SC458 C 2SC458 B
2SC2308

Abstract: 2SC2310 2sc458 2SC458 C
Text: HITACHI 2SC458, 2SC2308 SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SA1029 and 2SA1030 ! * * X ? . r r .- ! .n 1 1. EmitlCf 2. [O f 3. Base (Ditncn»iuife in mnó (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item C u lk ciar to base voltage Collector to em itter voltage Emitter to base voltage Col lector current Em itter current Collector pow er dissipation junction temperature Storage temperature Symbol Vl B O V ceo 2SC458 30 30 5 100 -1 0 0 200 150 -5


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PDF 2SC458, 2SC2308 2SA1029 2SA1030 2SC458 2SC45* 2SC23 270Hz 2SC2308 2SC2310 2SC458 C
equivalent transistor 8550

Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
Text: 556 / 9015 2SA883 HN / BC 556 / 9015 2SA1030 HN / BC 557 / 9015 2SA1378 HN / BC 327


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PDF To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
2000 - 2sc458

Abstract: 2SC2308 2sc458 transistor 2SA1029 2SA1030 2SC2310 Hitachi DSA0076
Text: 2SC458, 2SC2308 Silicon NPN Epitaxial ADE-208-1043 (Z) 1st. Edition Mar. 2001 Application · Low frequency amplifier · Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector


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PDF 2SC458, 2SC2308 ADE-208-1043 2SA1029 2SA1030 2SC458 15lectronic 2sc458 2SC2308 2sc458 transistor 2SA1030 2SC2310 Hitachi DSA0076
2SB737

Abstract: 2SA1015 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1142 2SA1177
Text: - IS - a « Type No. tt « Manuf. H SANYO M 2 TOSHIBA b a NEC b iL HITACHI S ± il FUJITSU fö T MATSUSHITA H S MITSUBISHI □ — a ROHM 2SA 973 J fâ T 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA 977 85 T 2SA1209 2SA949 2SA1142 2SB648 2SA 977A fé T 2SA1352 2SA1142 2SA 978 = m 2SA929 2SA990 2SA836 2SA933 2SA 979 X = » 2SA1240 2SA970 2SA 980 •y-VÍTV 2SB816 2SB849 2SA 981 y-yry 2SB816 9SW49 2SA 982 vyjy 2SB816 2SB849 2SA 983 X e a 2SA1015 2SA


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PDF 2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA1209 2SA949 2SA1142 2SB648 2SA1352 2SB737 2SA978 2SA933 2SA1127 2SA970 2sa1306 2SA933 R 2SA1177
2010 - BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Text: RF LOW-POWER SILICON PNP Item Number Part Number Manufacturer V(BR)CEO (V) fr (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max °C Package Style V(BR)CEO BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A 2SA493 BC212BP BC212KB 2SA1317R 2SA1318R 2SA1338AL4 2SA1338AY4 2SA1339R 2SA1318S 1 2SA1338AY5 2SA1339S BC212A 2SA1299E 2SA999 2SA1030 2SB793A 2SA1317T 2SA1318T 2SA1338AL6 2SA1338AY6 2SA1339T 2SA1299F


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PDF BC212LA BCW86 2SB637K 2SB710A 2SA891 2SB621A BSW45A LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
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