The Datasheet Archive

2SA1018 datasheet (16)

Part Manufacturer Description Type PDF
2SA1018 Panasonic TRANS GP BJT PNP 200V 0.07A 3TO-92-B1 Original PDF
2SA1018 Panasonic PNP Transistor Original PDF
2SA1018 Panasonic Silicon PNP epitaxial planer type Original PDF
2SA1018 Micro Electronics PNP SILICON TRANSISTOR Scan PDF
2SA1018 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1018 Others Shortform Transistor PDF Datasheet Scan PDF
2SA1018 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1018 Others Cross Reference Datasheet Scan PDF
2SA1018 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1018 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1018 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1018 Others The Japanese Transistor Manual 1981 Scan PDF
2SA1018 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA10180RA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 200VCEO 70MA TO-92 Original PDF
2SA1018Q Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
2SA1018R Panasonic TRANS GP BJT PNP 200V 0.07A 3TO-92-B1 Original PDF

2SA1018 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2s8698

Abstract: 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
Text: 2SA699A 2SB1187 2SA 637 85 T 2SA1018 2SA821 2SA 638 B ™ 2SA1207 2SA778(X) 2SA921 2SA821 2SA 638S nr L 2SA970 2SA821 2SA 639 m L 2SA1207 2SA970 2SA778A(K) 2SA1018 2SA821 2SA 639S a


OCR Scan
PDF 2SB632 2SA715 2SA699 2SB1064 2SB632 2SA473 2SB631 2s8698 2SA634A 2sB1064 2sa1015 2SA970 2SA715 2SA836 2SA854 2SA699 2SA1039
2sa933

Abstract: 2SA934 2sa726 2sa999 2SA999L 2SA1005 2sb849 2SB1314 2SA1115 2SA715
Text: 2SB856 2SB1064 2SA 749 ,• tö t 2SA970 2SA638 2SA778(K) 2SA1018 2SA 749A fö t 2SA1207 2SA970 2SA988 2SA1018 2SA 750 ■b c 2SA929 2SA836 2SA1309A 2SA1039 2SA 751 fö t 2SB544 2SB548


OCR Scan
PDF 2SA1768 2SA830 2SB849 2SB946 2SB1142 2SA473 2SB772 2SA699 2SB1314 2SB1009 2sa933 2SA934 2sa726 2sa999 2SA999L 2SA1005 2sb849 2SA1115 2SA715
2SA1015

Abstract: 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785 2SA1016
Text: 788 □ —A 2SA929 2SA990 2SA836 2SA937 2SA 789 □ —A 2SA930 2SA1015 2SA990 2SA836 2SA1018 , 2SB788 2SA802 2SA 805 □ —A 2SA1207 2SA1018 2SA 806 □ —A 2SA1207 2SA1018 2SA 807


OCR Scan
PDF 2SB631 2SA743 2SA699A 2SB1064 2SA1339 2SA1015 2SA1016 2SA1015 2SA675 2SA836 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785
2SA748

Abstract: 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2SB548 2sb861 2SA715
Text: 2 SAS17 2SA673A 2SA1284 2SA935 2SA 778 (K) B a 2SA1207 2SA949 2SA638 2SA1018 2SA821 2SA 77SA_ b a 2SA639 2SA1018 2SA821 2SA 778AK m » 2SA821 2SA 77 9 (K)~ a a 2SB511 2SA473


OCR Scan
PDF 2SA1705 2SB548 2SA715 2SA684 2SB1043 2SB817 2SA1232 2SB514 2SA985 2SA748 2SB927 2SA757B 2SB1043 2SB1064 2SB596 2sa763 2sb861 2SA715
1998 - 2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Text: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. s Absolute Maximum Ratings 13.5±0.5 q 5.1±0.2 s Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO ­250 V VCEO ­200 V Emitter to base voltage VEBO ­5 V , Rank Q R hFE 60 ~ 150 100 ~ 220 1 2SA1018 Transistor PC - Ta IC - VCE


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PDF 2SA1018 2SC1473 2SA1018 2SC1473 TRANSISTOR 2sc1473
1998 - 2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Text: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. s Absolute Maximum Ratings 13.5±0.5 q 5.1±0.2 s Features 4.0±0.2 (Ta=25°C) Parameter Symbol Ratings Unit VCBO ­250 V VCEO ­200 V Emitter to base voltage VEBO ­5 V , Rank Q R hFE 60 ~ 150 100 ~ 220 1 2SA1018 Transistor PC - Ta IC - VCE


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PDF 2SA1018 2SC1473 2SA1018 2SC1473 TRANSISTOR 2sc1473
2SB667

Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN41464A08 MN1455LF MN6404
Text: 2SA1309A 2SA1309A 2SA1018 2SA1127 2SA1127 2SA1018 2SA1127 2SA1127 2SA719 2SA720 2SA1018 2SA1018 2SA683


OCR Scan
PDF MN14T6 MN1418 MN1420 MN1421 MN1425 MN1427 MN1441 MN1442 MN1432 MN1450B 2SB667 MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN41464A08 MN1455LF MN6404
2003 - 2SA1018

Abstract: 2SC1473
Text: Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 Features 0.7±0.2 · High collector-emitter voltage (Base open) VCEO 12.9±0.5 0.7±0.1 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -250 V 0.45+0.15 ­0.1 , SJC00008BED 1 2SA1018 PC Ta IC VCE 600 400 Ta = 25°C IB = -1.0 mA -80 - 0.9 mA -


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PDF 2SA1018 2SC1473 2SA1018 2SC1473
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 ■Features pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w , with the RoHS Directive (EU 2002/95/EC). 2SA1018 PC  Ta IC  VCE 600 Ta = 25°C IB =


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PDF 2002/95/EC) 2SA1018 2SC1473
2003 - ic 2SA1018

Abstract: 2SA1018 2SC1473 2SC147
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Unit: mm 4.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so , 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1018 PC Ta IC VCE


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PDF 2002/95/EC) 2SA1018 2SC1473 ic 2SA1018 2SA1018 2SC1473 2SC147
2SA1441

Abstract: 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
Text: 2SA1018 2 SA 1487 fé T 2SAÌ209 2SA1145 2SA 1488 ^ tl-yirv 2SA1469 2SB1017 2SA1441 2SB762


OCR Scan
PDF 2SB698 2SA950 2SA1515 2SA1150 2SA1515S 2SA1298 2SB1197K 2SA1257 2SA1330 2SB792 2SA1441 2sA1441 nec 2SA1115 2SA1263 2SB1197K 2SA1232 2SA1310 2SA1018 2SA1142 2SA1624
2SA1115

Abstract: 2SA1115 E DTA124EK 2SA1175 RT1P141C 2SA1334 2SA1323 2SA1318 2SA1018 2SA1309A
Text: FUJITSU tö T MATSUSHITA 2SA1309A 2SA1309A 2SA1018 2SA879 = m MITSUBISHI 2SA1115 - A ROHM


OCR Scan
PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK 2SA1175 RT1P141C 2SA1334 2SA1323 2SA1318
2SA1018

Abstract: 2SC1473 TRANSISTOR 2sc1473
Text: Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 Unit: mm 5.0±0.2 4.0±0.2 s Absolute Maximum Ratings 0.7±0.2 High collector to emitter voltage VCEO. 0.7±0.1 12.9±0.5 q 5.1±0.2 s Features (Ta=25°C) Parameter Symbol Ratings Unit VCBO ­250 V VCEO ­200 V Emitter to base voltage , pF Rank classification Rank Q R hFE 60 ~ 150 100 ~ 220 97 2SA1018


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PDF 2SA1018 2SC1473 2SA1018 2SC1473 TRANSISTOR 2sc1473
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Features 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 · High collector-emitter voltage (Base open) VCEO Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter , /95/EC). 2SA1018 PC Ta 1 000 -100 IC VCE Ta = 25°C IB = -1.0 mA - 0.9 mA - 0.8 mA -60 -


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PDF 2002/95/EC) 2SA1018 2SC1473
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1018 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473 Features 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 · High collector-emitter voltage (Base open) VCEO Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter , /95/EC). 2SA1018 PC Ta 1 000 -100 IC VCE Ta = 25°C IB = -1.0 mA - 0.9 mA - 0.8 mA -60 -


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PDF 2002/95/EC) 2SA1018 2SC1473 45nteed
2SA970

Abstract: 2SA934 2sa1015 2sa952 2sa933 2SA953 2sB1064 2SA1782 2SA720 2SA836
Text: 2SA1207 2SA970 2SA638 2SA778ÍK) 2SA1018 2SA821 2SA 695 ^ h m 2SB698 2SA950 2SA952 2SB562 2SA719


OCR Scan
PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA970 2SA934 2sa952 2sa933 2sB1064 2SA720 2SA836
2SB873

Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
Text: ) 2SA1737 ; 2SA1018 ! . 2SC1473 2SD662 2SD662B 2SB1221 2SA1858 2SC3941 ¡2SA879 (2SC1573/A/B 2SC4787


OCR Scan
PDF O-92NL O-92L 2SB1537 2SB1538 2SD2358 2SB1539 V2SD2359 2SB1614 2SC1518 2SB1540 2SB873 2SA879 D2483 2SC1360 2sc5018 2SD2360
C1360A

Abstract: 2SC4971 2SB873 2SB1615 SC1360
Text: 2SC3526(H) 2SA1487 i 2SA1018 i 2SC1473 2SD662 2SB1221 Í2SA879 2SC4787 2SC4502 2SA1737 50 50 150 50


OCR Scan
PDF 2SB1537 2SD2357 2SB1538 12SD2358 A2SB1611 2SD1679 2SB789/A 2SD968/A 2SB1297 2SD1937 C1360A 2SC4971 2SB873 2SB1615 SC1360
2SA1015

Abstract: 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
Text: - 34 - S s Type Ho. tt S Manuf. = # SANYO X S TOSHIBA B S NEC 0 Ä HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI □ - A ROHM 2SA 1535 , fö T 2SB1037 Tfifi 2SB649A 2SB1186A 2SA 1535A fô T 2SA1306A 2SB1186B 2SA 1537 = 2SB548 2SB1314 2SA 1542 □ —A 2SA1783 2SA1015 2SA733 2SA1309A 2SA 1543 □ —A 2SA1015 2SB642 2SA 1544 B S 2SA1624 2SA1091 2SA1018 2SA 1545 B m 2SA1371 2SA1432 2SA879 2SA 1546 B ^ 2SA1381 2SA914 2SA 1547 â


OCR Scan
PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2SA1162 2s8817 2SB1198K 2SA1638 2sa1175 2SA1018
Text: % 2SA1699 2SA1018 2SA1760 2SA 1626 S « 2SA1786 2SA 1628 a Sz 2SA1622 2SA1586 2 SA1611


OCR Scan
PDF 2SA1772 2SA1641 2SB936 RN2206 UN4116 2SA1781 2SA1162 2SA812 2SA1022 2SA1622 2SA1699 2sa1015 2SA1586 2s8817 2SB1198K 2SA1638 2sa1175 2SA1018
2SB737

Abstract: 2SA1038 2sa1015 2SB873 2SA847 2SA999 2SA1104 2SA933S 2SA1232 2SA1015 ba
Text: 2SA1018 2SA 1092 - fé T 2SA1177 2SA1015 2SA991 2SA1039 2SA 1093 Ä 2 2SB816 2SA1265N 2SB849


OCR Scan
PDF 2SB922 2SA1302 2SB946 2SB920 2SA968 2SA985 2SB940 2SB1085 2SA985A 2SB1085A 2SB737 2SA1038 2sa1015 2SB873 2SA847 2SA999 2SA1104 2SA933S 2SA1232 2SA1015 ba
2sa1015

Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
Text: 2SA 612 SrBÄ 2SA429(G)TM 2SA1018 ZSA1039 2SA 613 b a 2SA715 2SB1085 2SA 614 — B a


OCR Scan
PDF 2SA984 2SA673 2SA1096 2SA1283 2SA935 2SA1450 2SA1096 2SA1015 2sa1015 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SB596 2SA1090 2SA673
an6512n

Abstract: mn1225 mn6520 MN1280 MN6130 MN1201A MN6147C MN12C201D MN12C261D MN3107
Text: 2SB1218A 2SA1018 2SB1320A 2SD1846 2SC3311A 2SC3311A - T y p e No. 2SC1730 2SC1845 2SC1848 2SC1849 , 2SA1096 2SA1096A 2SA748 2SA1309A 2SA1309A 2SA1018 2SA1127 2SA1127 2SA1018 2SA1127 2SA1127 2SA719 2SA720 2SA1018 2SA1018 2SA683 2SA684 2SB940 2SA1127 2SA1111 2SB1371 2SB940 2SA1310 2SB946 2SA748 2SA1124 2SA1111


OCR Scan
PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 mn6520 MN1280 MN6130 MN6147C MN12C201D MN12C261D MN3107
1998 - 2SC1473

Abstract: TRANSISTOR 2sc1473 2SA1767 2SA1018 2SC1473A
Text: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm s Features High collector to emitter voltage VCEO. High transition frequency fT. s Absolute Maximum Ratings Parameter (Ta=25°C) Symbol Collector to 2SC1473 base voltage 2SC1473A Collector to 2SC1473 Ratings 250 VCBO 300 200 VCEO emitter voltage 2SC1473A Emitter to base voltage


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PDF 2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 TRANSISTOR 2sc1473 2SA1767 2SA1018
2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Text: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT. s Absolute Maximum Ratings Parameter (Ta=25°C) Symbol Collector to 2SC1473 base voltage 2SC1473A Collector to 2SC1473 0.7±0.1 12.9±0.5 q Ratings 250 VCBO 300 200 VCEO emitter


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PDF 2SC1473, 2SC1473A 2SC1473 2SA1018 2SC1473A 2SA1767 2SC1473 2SA1018 2SA1767 TRANSISTOR 2sc1473
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