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2SA1012-Y datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
2SA1012-Y 2SA1012-Y ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1012Y 2SA1012Y ECAD Model Toshiba TRANS GP BJT PNP 50V 5A 3(2-10A1A) Scan PDF

2SA1012-Y Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - transistor 2sA1012

Abstract: 2sa1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Text: TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120 ~ 240 R 180 ~ 360 2 of 4 QW-R203-015,F 2SA1012


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PDF 2SA1012 2SC2562 2SA1012L 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012-x-TM3-T 2SA1012L-x-TM3-T 2SA1012-x-TN3-R transistor 2sA1012 2sa1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
2005 - 2SA1012

Abstract: 2SA1012L 2sc2562 transistor 2sA1012
Text: www.unisonic.com.tw Y 120 ~ 240 2 of 4 QW-R203-015,E 2SA1012 PNP SILICON TRANSISTOR TYPICAL


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PDF 2SA1012 O-252 2SC2562 O-220 O-220F 2SA1012L 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012 2SA1012L 2sc2562 transistor 2sA1012
2sc2562

Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
Text: ) Classification O : 70~140, Y : 120~240 - - CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


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PDF 2SA1012 2SC2562. O-220AB SC-46 2-10A1A 100Xl00X2mm 2sc2562 2SA1012 A101 AC75 2SC2562 Toshiba
2SA1012

Abstract: hFE is transistor to220
Text: ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y , according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage , Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol O Y Min. Typ. Max. Unit


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PDF 2SA1012 O-220 2SA1012 hFE is transistor to220
2014 - Not Available

Abstract: No abstract text available
Text: hFE1 RANK RANGE O 70 ~ 140 Y 120 ~ 240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw


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PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T O-220 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T O-220F 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T
2sa1012

Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
Text: -1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon


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PDF 2SA1012 O-220 2SD2562 O-220) 2sa1012 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
2SA1012

Abstract: ABE+407
Text: : Pulse Width =300 us, Duty Cycle S 2.0% * hFE(2) Classification : 70 O 140 120 Y 240 2SA1012 PNP " CE , // y / / Tc =100 y F r


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PDF 2SA1012 2SA1012 ABE+407
1012 TOSHIBA

Abstract: 2sc2562 2SA1012 AC75 2sa101
Text: : hjTE(l) Classification O : 70~140, Y : 120~240 T j L s tg _ , lit y a n d t h e r e lia b ilit y o f its p ro d u c ts . N e v e r th e le s s , s e m ic o n d u c , e n t e le c tr ic a l s e n s itiv ity a n d v u ln e r a b ilit y t o p h y s ic a l stre ss. I t is t h e r e s p o n s ib ility o f t h e b u y e r, w h e n u tiliz in g T O S H IB A p ro d u c ts , a n life , b o d ily in ju r y o r d a m a g e t o p r o p e r t y . In d e v e lo p in g y o u r d


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PDF 2SA1012 2SC2562. O-220AB SC-46 2-10A1A ----50V, 50X50X2m 1012 TOSHIBA 2sc2562 2SA1012 AC75 2sa101
2004 - 2SA1012

Abstract: No abstract text available
Text: EPITAXIAL TRANSISTOR CLASSIFICATION OF hFE1 RANK RANGE O 70 - 140 Y 120 - 240 TYPICAL PERFORMANCE


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PDF 2SA1012 2SC2562 O-251 QW-R213-012 2SA1012
2010 - 2SA1012

Abstract: 2sc2562
Text: hFE1 RANK RANGE O 70 ~ 140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120 ~ 240


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PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R 2SA1012 2sc2562
2005 - 2sa1012

Abstract: No abstract text available
Text: ~ 140 Y 120 ~ 240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R209-008,D 2SA1012


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PDF 2SA1012 2SC2562 O-220 2SA1012L 2SA1012-TA3-T 2SA1012L-TA3-T O-220 QW-R209-008 2sa1012
2SC256

Abstract: 2SA1012
Text: 2SA1012 FEATURES: SILICON PNP EPITAXIAL TYPE HIGH CURRENT S WITCHING APPLICATIONS. INDUSTRIAL A P P L I CATIONS Unit in ram 0 3 .6 ± 0 .2 o n * .a 3 L o w C ollector Saturation Voltage : V c E ( s a t ) = - 0 .4 V(Max.) at I C= - 3A High Speed Switching Time : tgtg = l .O u s ( T y p . , VCB=-10V, IE=0, f-lMHz zone M H rr^p, _ » output US ' I B1 = I B2 = 0 -1 5 A DUTY O Y C L B â l Ç i VCC- - 3 0 V h-pE(l) C l assification 0 : 70^140, Y : 120^240 132 2SA1012


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PDF 2SA1012 2SC256 2SA1012
2SA1012

Abstract: 50V 1A PNP power transistor
Text: =1MHz CLASSIFICATION OF Rank Range hFE O 70-140 Y 120-240 2SA1012(PNP) TO-220 Transistor Typical


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PDF 2SA1012 O-220 O-220 2SC2562 tp300S, -100A, 150mA 50V 1A PNP power transistor
2003 - Not Available

Abstract: No abstract text available
Text: O 70 - 140 Y 120 - 240 TYPICAL PERFORMANCE CHARACTERISTICS UTC QW-R209-008,B UTC


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PDF 2SA1012 A1012 2SC2562 O-252 QW-R209-008
2SA1012

Abstract: 2SD2562 transistors aio 20
Text: Classifications O Y 70-140 120-240 E-mail: aoksemic@msn.com 2/5 AGK AOK Semiconductor Product Specification


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PDF 2SA1012 T0-220 2SD2562 2SD2562 transistors aio 20
transistor Ic 1A

Abstract: No abstract text available
Text: VCE -4V, IC -1A y CB = _ lQV, IE = Q, f= 1MHz Ttjo INPUT !B2 20/W SN"T t 70 30 240 0.2 , U m -I B I =IB2 =0.15A VCC= - 3 0 V DUTY CYCLE ^2% O : 70~140, Y : 120~240 1 2001 05-24 -


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PDF 2SA1012 2SC2562. O-220AB SC-46 2-10A1A --50V, transistor Ic 1A
2013 - Not Available

Abstract: No abstract text available
Text:  CLASSIFICATION of hFE1 RANK RANGE O 70 ~ 140 Y 120 ~ 240 UNISONIC TECHNOLOGIES


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PDF 2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R
Not Available

Abstract: No abstract text available
Text: SILICON PN P EPITAXIAL T Y P E (PC T P R O C ESS) 2SA1012 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm lCLSM AX^ 0 3 . 6 ± d Z W · · · Low Collector Saturation Voltage : V cE(sat)-°.4V (M ax.)at Ic = -3A High Speed Switching Time : tstg = 1 .0 //s (Typ , Fall Time tf DUTY CYCLES 2% Note : h fE d ) Classification O : 70-140, Y : 120-240 SYMBOL 1 , \\ CURVES MUST BE DERATED LINEARLY WITH INCREASE N IN TEMPERATURE. V(; e o MA X. x y V -3 -1 0 - 3 0


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PDF 2SA1012 2SC2562. 200x200x2m 100X2mm
1012 TOSHIBA

Abstract: 2sc2562 2SA1012 A101 AC75
Text: c = - 30V O : 70~140, Y : 120~240 1 2 001 05-24 - TO SH IBA 2SA1012 VCE - IC


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PDF 2SA1012 2SC2562. 1012 TOSHIBA 2sc2562 2SA1012 A101 AC75
2004 - 2SA1012

Abstract: No abstract text available
Text: CLASSIFICATION OF hFE1 RANK RANGE O 70 - 140 Y 120 - 240 TYPICAL PERFORMANCE CHARACTERISTICS UTC


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PDF 2SA1012 2SC2562 O-252 QW-R209-008 2SA1012
2003 - a1012 transistor

Abstract: transistor A1012 a1012 a1012* transistor
Text: RANK RANGE SILICON PNP EPITAXIAL TRANSISTOR O 70 - 140 Y 120 - 240 CLASSIFICATION OF hFE1


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PDF 2SA1012 A1012 2SC2562 O-220 QW-R203-015 a1012 transistor transistor A1012 a1012* transistor
Not Available

Abstract: No abstract text available
Text: : hpE(l) Classification O : 70 ~ 140, Y : 120^240 T stg


OCR Scan
PDF 2SA1012 2SC2562. O-220AB SC-46 2-10A1A --10mA, 200x200x2mm
2SA1012

Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
Text: ,VCC= -30V Fall Time hFE-1 Classifications O Y 70-140 120-240 isc


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PDF 2SA1012 2SC2562 2SA1012 transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
2004 - Not Available

Abstract: No abstract text available
Text: Note: hFE(1) Classification O : 70-140, Y : 120-240 *Pulse test: tp≤300µS, δ≤0.02. us


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PDF O-220 2SA1012 2SC2562 150mA
transistor 2sA1012

Abstract: 2SA1012 2sc2562
Text: 0.1 s 1.0 s 0.1 s IC= -3A ,RL= 10, IB1= -IB2= -0.15A,VCC= -30V Y 120-240 isc


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PDF 2SA1012 2SC2562 transistor 2sA1012 2SA1012 2sc2562
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