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2PB1219R

Abstract: 2PB1219S 2PB1219 2PB1219A 2PB1219Q 2PB1219AQ 2PB1219AR 2PB1219AS
Text: MARKING NUMBER CODE 2PB1219Q CQ 2PB1219R CR 2PB1219S CS 2PB1219AQ DQ 2PB1219AR DR 2PB1219AS DS , 2PB1219R ; 2PB1219AR 2PB1219S; 2PB1219AS VCE = -10 V; lc = -150 mA; note 1 85 120 170 170 240 340 fT , 2PB1219R ; 2PB1219AR 120 - MHz 2PB1219S; 2PB1219AS 140 - MHz Cc collector capacitance VCB = -10 V; lE =


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PDF 2PB1219; 2PB1219A 2PB1219Q 2PB1219R 2PB1219S 2PB1219AQ 2PB1219AR 2PB1219AS 2PB1219 2PB1219 2PB1219A
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Abstract: No abstract text available
Text: MARKING CODE 2PB1219Q 2PB1219R CR 2PB1219S CS 2PB1219AQ DQ 2PB1219AR DR , 2PB1219Q; 2PB1219AQ 85 170 2PB1219R ; 2PB1219AR 120 240 170 340 100 - MHz 2PB1219R ; 2PB1219AR 120 - MHz 2PB1219S; 2PB1219AS 140 2PB1219S; 2PB1219AS transition


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PDF 2PB1219; 2PB1219A 2PB1219Q 2PB1219R 2PB1219S 2PB1219AQ 2PB1219AR 2PB1219AS 2PB1219
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Abstract: No abstract text available
Text: 2PB1219R Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m @I(B) (A) (Test Condition)30m h(FE) Min. Current gain.120 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)150m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq120M @I(C) (A) (Test Condition) @V


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PDF 2PB1219R Freq120M
transistor SMD s72

Abstract: nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A kvp 81A DIODE Kvp 69A smd transistor A7p kvp 86a
Text: No file text available


Original
PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A kvp 81A DIODE Kvp 69A smd transistor A7p kvp 86a
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