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Part Manufacturer Description Datasheet Download Buy Part
MSS2P3-M3/89A Vishay Semiconductors DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN, Rectifier Diode
SS2P3-M3/85A Vishay Semiconductors DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
EN2P3M20K Switchcraft Conxall Circular Connector,
EN2P3M20PK Switchcraft Conxall Circular Connector,
EN2P3M20 Switchcraft Conxall Circular Connector,
TS2P3M20 Switchcraft Conxall TS2 3#20 MALE PANEL
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  You can filter table by choosing multiple options from dropdownShowing 49 results of 51
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
121985 - BB-UL-18/2P-3M/39 Eaton Electronics Shortec Electronics 74 - -
121993 - BB-UL-25/2P-3M/39 Eaton Electronics Shortec Electronics 57 - -
9GA0412P3M01 Sanyo-Denki Co Ltd PUI 252 $13.99 $11.19
9GA0412P3M01 Sanyo-Denki Co Ltd Sager - $14.31 $11.11
9GA0412P3M01 Sanyo-Denki Co Ltd Chip1Stop 126 $11.75 $10.48
9GA0412P3M011 Sanyo-Denki Co Ltd Sager - $14.31 $11.11
EN2P3M20 Switchcraft Conxall Interstate Connecting Components 20 $3.62 $3.62
EN2P3M20 Switchcraft Conxall Heilind Electronics 20 $3.62 $3.62
EN2P3M20 Switchcraft Conxall Allied Electronics & Automation - $4.38 $4.38
EN2P3M20 Switchcraft Conxall Electroshield 491 $4.23 $2.38
EN2P3M20K Switchcraft Conxall Allied Electronics & Automation - $4.24 $4.24
EN2P3M20K Switchcraft Conxall Sager - $4.08 $3.14
EN2P3M20K Switchcraft Conxall Electroshield - $4.54 $2.55
EN2P3M20P Switchcraft Conxall Allied Electronics & Automation - $4.27 $4.27
EN2P3M20P Switchcraft Conxall Sager - $4.11 $3.15
EN2P3M20P Switchcraft Conxall Electroshield - $4.75 $2.67
EN2P3M20PK Switchcraft Conxall Sager - $4.59 $3.51
EN2P3M20PK Switchcraft Conxall Electroshield - $5.06 $2.85
EN2P3M20PK Switchcraft Conxall Allied Electronics & Automation - $5.42 $4.93
HS2P3M20 Switchcraft Conxall Interstate Connecting Components 25 $16.59 $14.22
HS2P3M20 Switchcraft Conxall Chip1Stop 23 $14.53 $14.19
HS2P3M20 Switchcraft Conxall Sager 25 $12.94 $11.75
HS2P3M20 Switchcraft Conxall Heilind Electronics 25 $16.59 $14.22
HS2P3M20 Switchcraft Conxall Allied Electronics & Automation 14 $22.33 $16.75
LP-454965-2P-3M BAK Battery Farnell element14 324 £27.14 £13.83
MSS2P3-M3/89A Vishay Intertechnologies Chip1Stop 4,500 $0.19 $0.10
MSS2P3-M3/89A Vishay Intertechnologies Future Electronics 184,500 $0.17 $0.17
MSS2P3-M3/89A Vishay Intertechnologies Avnet - - -
MSS2P3-M3/89A Vishay Intertechnologies Newark element14 96,639 $0.43 $0.07
MSS2P3-M3/89A Vishay Intertechnologies Avnet - - -
MSS2P3-M3/89A Vishay Semiconductors New Advantage Corporation 175,500 $0.34 $0.31
MSS2P3-M3/89A Vishay Intertechnologies Farnell element14 13,357 £0.19 £0.08
MSS2P3-M3/89A Vishay Intertechnologies Avnet 22,500 $0.07 $0.03
MSS2P3-M3/89A Vishay Intertechnologies element14 Asia-Pacific 14,856 $0.49 $0.10
MSS2P3-M3/89A Vishay Intertechnologies element14 Asia-Pacific 14,856 $0.49 $0.10
MSS2P3-M3P/H Vishay Intertechnologies Avnet 67,500 $0.32 $0.11
SS2P3-M3/84A Vishay Intertechnologies Chip1Stop 2,993 $0.29 $0.16
SS2P3-M3/84A Vishay Intertechnologies Avnet - $0.21 $0.10
SS2P3-M3/84A Vishay Intertechnologies Avnet - - -
SS2P3-M3/85A Vishay Intertechnologies Avnet - - -
TS2P3M20 Switchcraft Conxall Allied Electronics & Automation 25 $14.98 $11.24
TS2P3M20 Switchcraft Conxall Heilind Electronics 25 $13.24 $11.35
TS2P3M20 Switchcraft Conxall element14 Asia-Pacific 25 $19.22 $13.54
TS2P3M20 Switchcraft Conxall Chip1Stop 25 $12.29 $9.80
TS2P3M20 Switchcraft Conxall Interstate Connecting Components 25 $13.24 $11.35
TS2P3M20 Switchcraft Conxall Newark element14 25 $8.38 $8.38
TS2P3M20 Switchcraft Conxall Farnell element14 25 £13.80 £11.03
TS2P3M20-B Switchcraft Conxall Sager - $10.32 $9.37
TS2P3M20-B Switchcraft Conxall Allied Electronics & Automation 25 $15.89 $11.92

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2P3M datasheet (1)

Part Manufacturer Description Type PDF
2P3M Hynix Semiconductor 0.6um Embedded OTP 5V Original PDF

2P3M Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2P3M

Abstract: No abstract text available
Text: 0.5um 2P3M Mixed Signal 3.3V Features ! 8)% # ?-?8?-?8 ! ! !" " ! #$%% %& %' ()*$( +,-$) ! !$$% . ( ) . / %0) 1 23 / $ 4% ) % 5 0 ! # ) ! # % % !. 6%" ) ( /%& !1 7$ )' 84%0) 9 .7+ ):/ ;% $ $. ! )". $ %6 !!< ! 466-%58858%-5858 , ( ) ( 0.5um 2P3M Mixed Signal 3.3V Electrical Parameters-I (Transistor) + - ( -!


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2P3M

Abstract: No abstract text available
Text: 0.6um 2P3M Embedded OTP 5V Features ! ! *1*1 ! ! ! ! !"#$% &'$(%#% )*+ &,#- .$ ! ! #, #/$ !&#(0-$1.'$ 2 ,#- ! #$343 (5&(#"%"# Design Rules · Logic ! · EPROM Cell . . ) " " & # $ , ( , "-# + #-$ # % $ ' $ 0.6um 2P3M Embedded


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2P3M

Abstract: 0.6 um cmos process
Text: 0.6um 2P3M Mixed Signal 5V updated in 2005.03.16 Features Vdd(Core/IO) 5V / 5V Starting Material P-type (100), 9~12 / Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145 Gate materials WSix polycide Inter-layer dielectric Thermally reflowed BPSG over TEOS based LPCVD Oxide , Metal 2,3 1.05 0.75 Remarks 1.80 MagnaChip Semiconductor, Ltd. 0.6um 2P3M Mixed


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2P3M

Abstract: No abstract text available
Text: 0.6um 2P3M Mixed Signal 5V Features ! *1*1 ! ! ! ! !"#$% &'$(%#% )*+ &,#- .'%$ #, #/$ !&#(0-$12'$ ! ! 3 ,#- #$.4. (5&(#"%"# ! Design Rules () ( ( !" () )( (+) # $ )( )( )( )(* () ( % () & ' % ' )( () )( )(* )( (+) , ( (+) 0.6um 2P3M Mixed Signal 5V


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2P3M

Abstract: No abstract text available
Text: 0.5um 2P3M Mixed Signal 5V Features ! 8)% # ?8?8 ! ! !" " ! #$%% %& %' ()*$( +,-$) ! !$$% . ( ) . / %0) 1 23 / $ 4% ) % 5 0 ! # ) ! # % % ;% $ $. ! # ) !. 6%" ) ( /%& !1 7$ )' 84%0) 9 .7+ ):/ )". $ %6 !!< ! 2P3M Mixed Signal 5V Electrical Parameters-I (Transistor) , + ( +! (0


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aec-q100

Abstract: AEC-Q100-011 G700K TSMC 1P4M MAX1782ETM tsmc cmos 0.11 um tsmc cmos model AC07X-1Z AB8200T MAX1782
Text: Automotive Qualification Report MAX7042ATJ+ 308MHz/315MHz/ 418MHz/433.92MHz Low-Power, FSK Superheterodyne Receiver Grade 1 32-Lead TQFN 5 x 5 mm AEC-Q100 Rev. F Tests MSL 1 - Preconditioning (PC) Lot # 1 (QYK0BQ001D) MAX7042ATJ+C1R Maxim Part Number AEC-Q100 (Note 4) Description (Note 1) -40 to +125C Operating Temperature Temperature Grade 1 Fab Location TSMC Fab 9 .35um 2P3M Fab , (QIO0BQ002E) MAX1471ATJ AEC-Q100 -40 to +125C 1 TSMC Fab 9 .35um 2P3M SC71Z NSEB Thailand 90 x 78 32


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PDF MAX7042ATJ+ 308MHz/315MHz/ 418MHz/433 92MHz 32-Lead AEC-Q100 QYK0BQ001D) MAX7042ATJ AEC-Q100 LF12Z AEC-Q100-011 G700K TSMC 1P4M MAX1782ETM tsmc cmos 0.11 um tsmc cmos model AC07X-1Z AB8200T MAX1782
247AA

Abstract: 2P3M LOCOS MAGNACHIP diffusion transistor
Text: 0.5um 2P3M Embedded OTP updated in 2005.03.16 Features Vcc 5V Starting Material P(100), Non-epi Well Structure CMOS Twin-well Isolation Conventional LOCOS Transistor Channel Buried channel PMOS NV Gate oxide 128 HV Gate oxide 247 EPROM Tunnel oxide 200 Inter-Poly Dielectric 218 Logic Gate Materials d-poly Si (option, d-poly + WSix) Inter-Layer , Semiconductor, Ltd. 0.5um 2P3M Embedded OTP updated in 2005.03.16 Electrical Parameters-I (Transistor


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PDF 500usec 247AA 2P3M LOCOS MAGNACHIP diffusion transistor
2P3M

Abstract: transistor TI 310
Text: 0.5um 2P3M Mixed Signal 3.3V updated in Oct 01, 2004 Features Vdd(Core/IO) 3.3V / 3.3V Starting material Well Structure P-type (100), 9~12 / CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS Gate oxide (Electrical) 95 Gate materials Doped Poly-Si + WSix Inter-layer dielectric Interconnection Thermally , 2P3M Mixed Signal 3.3V updated in Oct 01, 2004 Electrical Parameters-I (Transistor) Target


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PDF 50um2 2P3M transistor TI 310
0.5um 2P3M Mixed Signal 5V

Abstract: 2P3M
Text: 0.5um 2P3M Mixed Signal 5V updated in 2005.03.16 Features Vdd(Core/IO) 5V/5V Starting material P-type (100), 9~12 / Well Structure CMOS Twin-well Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side Transistor Channel Buried channel PMOS Gate oxide (Electrical) 130 Gate materials Doped Poly-Si + WSix Inter-layer dielectric Interconnection , Remarks 1.5 8 Same potential PMOS Length : 0.70 MagnaChip Semiconductor, Ltd. 0.5um 2P3M


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PDF 50um2 0.5um 2P3M Mixed Signal 5V 2P3M
2004 - MICRF102YM

Abstract: No abstract text available
Text: 0C to +85C 2P3M 1.15 X 1.43 .5 CMOS QUALIFICATION RESULTS TEST DESCRIPTION METHOD


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PDF MICRF102BM SPN860014) FN2K3331MO5 MICRF102 EME6600 MICRF102YM MICRF102YM
PI3VDP411LSRZBE

Abstract: PI3USB223 PI49FCT805TQE PI6C3453LE PI6C2410QE PI5USB58 clock buffer ZL-10 PI49FCT3806CQE PI49FCT805ATSE
Text: Crystal 0.35um 3.3V only 2P3M salicide 0.35um 3.3V only 2P3M salicide 3.3V VCXO & Low Noise PLL CG


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PDF PI3USB20LE PI3USB2117ZLE PI5USB58 PI3USB223 PI3VDP411LSTZBE PI3VDP611LSZDE PI3VDP612-AZFE PI3VDP411LSRZBE PI3VDP411LSRZBE PI3USB223 PI49FCT805TQE PI6C3453LE PI6C2410QE PI5USB58 clock buffer ZL-10 PI49FCT3806CQE PI49FCT805ATSE
AOZ1022DIL

Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A AOZ1360DI aoz1016 bd001
Text: 5/18V 2P3M process A 194 FH 84-3J/84-1LMISR4 epoxy Au 1mil and 2mils G600R Matte Tin 2 III


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PDF AOZ1360AIL/DIL, AOZ1360AI/AIL AOZ1360DI/DIL AOZ1360AI/AIL AOZ1360DI/DIL AOZ1022DIL PQ-01143C) AOZ1360AIL AOZ1360DIL -105D 22-A115-A JESD A114 84-3J 2P3M UMC A115A AOZ1360DI aoz1016 bd001
ablestik 8360

Abstract: A194-FH EME6600D A194FH B1004 Sumitomo EME6600D 2P3M EME-6600D
Text: Material AOZ8006FI UMC 0.5um 5/18V 2P3M process MSOP10 UI001A1_EPI (size: 716 x 616 um) ASM A194FH


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PDF AOZ8006FI, AOZ8006FI. AOZ8006FI AOZ8007FI AOZ8005CI IEC-61000-4-2, JESD78A ablestik 8360 A194-FH EME6600D A194FH B1004 Sumitomo EME6600D 2P3M EME-6600D
A194-FH

Abstract: A194FH marking A03 AOZ8005CI semiconductor body marking 84-3J marking A02 A02 SOT23 ESD test plan UE003A3
Text: Material AOZ8005CI UMC 0.5um 5/18V 2P3M process SOT-23 UE003A3 (size: 716 x 616 um) Copper A194FH


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PDF AOZ8005CI, AOZ8005CI. AOZ8005CI F162T FN646 AC003 IEC-61000-4-2, JESD78A A194-FH A194FH marking A03 semiconductor body marking 84-3J marking A02 A02 SOT23 ESD test plan UE003A3
2006 - ARM SRAM compiler

Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
Text: Metal 6T SRAM cell: 7.56µm² & 10.95µm² Via CM Insulator Embedded Flash: 2P3M SST


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PDF FC025 FC025 ARM SRAM compiler poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
CEL9220HF13

Abstract: ablebond 8006ns cel9220 CEL-9220HF13 CEL9220HF 8006ns ablebond 84-3J cel-9220 Ablebond cel-9220HF
Text: Material AOZ8001JI UMC 0.5um 5/18V 2P3M process SOT-143 UE003A3 (size: 716 x 616 um) AgCu Ablebond


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PDF AOZ8001JI, AOZ8001JI. AOZ8001JI F162T IEC-61000-4-2, JESD78A -105D CEL9220HF13 ablebond 8006ns cel9220 CEL-9220HF13 CEL9220HF 8006ns ablebond 84-3J cel-9220 Ablebond cel-9220HF
A194FH

Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH SS MARKING sot23 IEC-61000-4-2 2P3M a194 MP-8000CH4
Text: 0.5um 5/18V 2P3M process SOT-23 UE003A3 (size: 716 x 616 um) Copper A194FH 84-3J epoxy Au, 1mil


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PDF AOZ8000CI, AOZ8000CI. AOZ8000CI 617x10-5 -105D A194FH 84-3j mp8000ch4 A194-FH SS MARKING sot23 IEC-61000-4-2 2P3M a194 MP-8000CH4
ablebond 8006ns

Abstract: CEL9220HF13 cel-9220HF AOZ8000HI cel-9220 marking A03 22A108-B CEL9220 22-A108-B A108-B
Text: attach material Die bond wire Mold Material Plating Material AOZ8000HI UMC 0.5um 5/18V 2P3M process SC70


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PDF AOZ8000HI, AOZ8000HI. AOZ8000HI AB008) IEC-61000-4-2, JESD78A -105D ablebond 8006ns CEL9220HF13 cel-9220HF cel-9220 marking A03 22A108-B CEL9220 22-A108-B A108-B
1999 - CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 micron cmos sensor connection 6T SRAM pmos Vt BSIM3 nmos transistor AF64K8AF25
Text: Devices Applications eFlash ( 2P3M ) 32 P-prime wafer, double poly, logic with mixed signal


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PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 micron cmos sensor connection 6T SRAM pmos Vt BSIM3 nmos transistor AF64K8AF25
BSI CMOS image sensor

Abstract: FillFactory cmos transistor 0.35 um FillFactory cmos sensor KTC AL cmos sensor abstract 3E-07 2P3M
Text: correction algorithms. The sensor is designed in a 0.5 µm 2P3M CMOS technology. concerning the low signal


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PDF 100x100 BSI CMOS image sensor FillFactory cmos transistor 0.35 um FillFactory cmos sensor KTC AL cmos sensor abstract 3E-07 2P3M
PPAP level submission requirement table

Abstract: SMD a006 PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond TSMC 90nm sram INCOMING MATERIAL INSPECTION checklist, PCB foundry INCOMING MATERIAL INSPECTION procedure ISO 9001 Sony UMC cross reference
Text: No file text available


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TSMC 90nm sram

Abstract: tsmc cmos 0.13 um sram ford ppap TSMC 0.13um process specification EMMI microscope PPAP MANUAL for automotive industry semiconductors cross index ISO 9001 Sony foundry metals quality MANUALS Kyocera mold compound
Text: No file text available


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BMX XBP 0600

Abstract: Telemecanique xsp BMX p34 2020 BMX AMO 0410 telemecanique altivar 31 fault codes BMXFCW303 bmx ddi 3202K BMX ami 0800 BMX AMI 0410 modicon plc PID EXAMPLE
Text: No file text available


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PDF DIA6ED2061001EN BMX XBP 0600 Telemecanique xsp BMX p34 2020 BMX AMO 0410 telemecanique altivar 31 fault codes BMXFCW303 bmx ddi 3202K BMX ami 0800 BMX AMI 0410 modicon plc PID EXAMPLE
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