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2N930A Motorola Semiconductor Products Bristol Electronics 20 $1.88 $1.22
2N930A SPC Multicomp element14 Asia-Pacific 37 $1.05 $0.53
2N930A SPC Multicomp Farnell element14 57 £2.42 £0.69
2N930A New Jersey Semiconductor Products Inc New Advantage Corporation - -

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2N930A datasheet (36)

Part Manufacturer Description Type PDF
2N930A Central Semiconductor NPN Silicon Transistor Original PDF
2N930A Continental Device India NPN SILICON PLANAR TRANSISTORS, Low Noise, TO-18 Original PDF
2N930A Semelab Bipolar NPN Silicon Amplifier Transistors - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=150m / fT(Hz)=45M / Pwr(W)= Original PDF
2N930A Boca Semiconductor Amplifier Transistor NPN Scan PDF
2N930A Central Semiconductor BJT: NPN: Amplifier Transistor: IC 0.03A Scan PDF
2N930A Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
2N930A Crimson Semiconductor Transistor Selection Guide Scan PDF
2N930A General Diode Transistor Selection Guide Scan PDF
2N930A Micro Electronics Semiconductor Device Data Book Scan PDF
2N930A Micro Electronics Semiconductor Devices Scan PDF
2N930A Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N930A Motorola Low Level and General Purpose Amplifiers Scan PDF
2N930A Others Transistor Shortform Datasheet & Cross References Scan PDF
2N930A Others Basic Transistor and Cross Reference Specification Scan PDF
2N930A Others Shortform Transistor PDF Datasheet Scan PDF
2N930A Others Catalog Scans - Shortform Datasheet Scan PDF
2N930A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N930A Others Shortform Transistor Datasheet Guide Scan PDF
2N930A Others Vintage Transistor Datasheets Scan PDF
2N930A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

2N930A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N930

Abstract:
Text: Symbol VCEO VCBO vebo 2N930 45 45 5.0 30 2N930A 45 60 6.0 Unit Vdc Vdc Vdc m A dc W m W /T W , = 0) C o lle ctor C u to ff C urrent (V c b = 45 Vdc, V b e = 0) 2N930 2N930A 2N930 2N930A 2N930 2N930A 2N930 2N930A 2N930 2N930A v {BR)CEO v (BR)CBO v (BR)EBO 45 45 60 5.0 6.0 - - Vdc Vdc , IV e b = 5 0 Vdc, lc - 0) O N CHARACTERISTICS DC C u rrent Gain 2N930 2N930A hFE 2N930A 60 , = 5-0 Vdc, T a 55X ) 300 2N930 2N930A 2N930 2N930A 2N930 2N930A 20 30 150 - - -


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PDF 2N930, 2N930 2N930A O-206AA)
2002 - 2N930

Abstract:
Text: SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT , SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 , Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can , Cob hib hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE


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PDF 2N930 2N930A C-120 281102E 2N930 2N930A
2N930

Abstract:
Text: PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT V , CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 UNIT V V , Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package , hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE=0, f


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PDF ISO/TS16949 2N930 2N930A C-120 281102E 2N930 2N930A
2n930

Abstract:
Text: 2N930, A 2N930 45 45 5.0 30 0.5 3.33 1.2 6.9 - 65 to 175 2N930A 45 60 6.0 Unit Vdc Vdc Vdc m Adc W , C u to ff C urrent IVCB " 45 Vdc, V be = 0) 2N930 2N930A TA = 170"CI 2N930 2N930A ebo 2N930 2N930A - - 10 2.0 2N930 2N930A 'CES - - - - 10 2.0 /tA d c (Vc e = 45 Vdc, V be = E m itter C utoff C , = 1.0/itAdc, V ce ~ 5.0 Vdcl d c = 10 ¿íAdc, V ce = 5.0 Vdc, TA - 55'C) 2N930 2N930A 2N930 2N930A 2N930 2N930A 20 30 150 - - | Symbol | M in | M ax | Unit v |BR|CEO 2N930


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PDF 2N930, 2N930 2N930A O-206AA) 2N930 Motorola
2004 - LM390

Abstract:
Text: 2N930A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N930A HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N930A at our online store! 2N930A Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N930A Information Did you Know , Parts Request a Quote Test Houses 2N930A Specifications Military/High-Rel : N V(BR)CEO (V) : 45 V(BR


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PDF 2N930A 2N930A STV3208 LM3909N LM3909 LM390
2N930

Abstract:
Text: Boca Semiconductor Corp. (BSC) Rating Symbol 2N930 2N930A Unit Collector-Emitter Voltage VCEO , Breakdown Voltage (lc = 10 jiAdc, l£ = 0) 2N930 2N930A V(br)cbo 45 60 — Vdc Emitter-Base Breakdown Voltage (lE = 10 /tAdc, lc = 0) 2N930 2N930A V(BR)EBO 5.0 6.0 - Vdc Collector Cutoff Current IVrc = 5.0 Vdc. Ir = 0) 'ceo — 2.0 nAdc Collector Cutoff Current (VCB = 45 vdc- >E = 2N930 2N930A icbo - 10 2.0 nAdc Collector Cutoff Current (VCB = 45 Vdc- VBE ~ 0) 2N930 2N930A ices - 10 2.0 nAdc Ade (Vce =


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PDF 2N930 2N930A 2N930, O-206AA)
Not Available

Abstract:
Text: SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A 60 UNIT , SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage 2N930 >45 2N930A >60 , Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can , Cob hib hrb hfe hob NF TEST CONDITION IC=500µA,VCE=5V, f=30MHz 2N930 2N930A VCB=5V, IE


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PDF 2N930 2N930A C-120 281102E
2N930

Abstract:
Text: Datasheet 2N930 wVliiill 2N930A Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N930, 2N930A types are , applications. MAXIMUM RATINGS: (TA=25eC) SYMBOL 2N930 2N930A UNITS Collector-Base Voltage vCBO 45 , noted) 2N930 2N930A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS 'CBO VCB=45V 10 2.0 nA


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PDF 2N930 2N930A 2N930 2N930A 10jxA 10fiA 500jiA transistor 45 f 122
2N930A

Abstract:
Text:  2N930A ^IP NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE NPN AMPLIFIER TRANSISTOR MAXIMUM RATINGS RATINGS SYMBOL 2N930A UNITS Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VcBO 60 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous k 30 mAdc Total Power Dissipation @ Tc = , 01841 FAX: (978)689-0803 T4-4.8-860-347 REV: - 2N930A ^MW ^NEW ENGLAND SEMICONDUCTOR ELECTRICAL


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PDF 2N930A 2N930A
2003 - 2N930A

Abstract:
Text: 2N930A BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 5.33 (0.210) 4.32 (0.170) · SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. · HERMETICALLY SEALED METAL PACKAGE , AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: TO18 (TO-206AA) PACKAGE The 2N930A is , ://www.semelab.co.uk Document Number 5470 Issue 1 2N930A ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF 2N930A O-206AA) 2N930A 30MHz
2001 - Not Available

Abstract:
Text: ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N930 2N930A , mW mW/ºC W mW/ºC ºC 2N930A MIN MAX 60 UNIT V 45 60 V 5.0 6.0 V , =-55ºC 2N930 MIN MAX 2N930A MIN MAX 100 20 60 100 30 300 UNIT 300 DYNAMIC , . Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com 2N930_ARev280701


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PDF 2N930, 2N930 2N930A C-120 ARev280701
D 1398 Transistor

Abstract:
Text: SIZE DWG. NO. ELECTRONIC FILE REV A SCALE: NTS 2N930A U.O.M.: Millimeters 35C 0743.D W G , SIZE D W G . N O . E LE C TR O N IC FILE R E V A DOC. NO. S P C -F0 05 2N930A N TS U.O


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PDF PC-F005 30MHz, 10kohm 2N930A 35C0743 SPC--F005 D 1398 Transistor k 1398 Transistor LB 121 NPN TRANSISTOR transistor AS 431
2n706 transistor

Abstract:
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS h FE @ Ic/ VCE min/max @ mA/V VcE(iat) @IC/IB V@ mA/mA P fr (MHz) TO-18 T0206AA 2N706 15 0.05 20@10/1 0.6@10/1 6 200 2N708 15 - 30-120@10/l 0.4@10/1 6 300 2N718 40h 0.5 40/120@150/10 1.5@150/15 35 50 2N718AA 50 0.5 40/120@150/10 1.5@150/15 25 60 2N720A 80 - 40/120@150/10 5.0@ 150/5 15 50 2N930A 45 0.03 150@0.5/5 1.0@ 10/0.5 8 30 2N2221 30 0.8 40/120@150/10 0.4@150/15 8 250


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PDF T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2N2222AA 03150 transistor 2n2222 jan
Not Available

Abstract:
Text: 2N930A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m @I(B) (A) (Test Condition)500u h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)10u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N930A
2002 - Not Available

Abstract:
Text: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


Original
PDF 2N930A O206AA) 16-Jul-02
2002 - Not Available

Abstract:
Text: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


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PDF 2N930A O206AA) 2-Aug-02
2n706 transistor

Abstract:
Text: \ 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2N2222AA 2N2368 2N2369 2N2369A 2N3227 2N2432A


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PDF T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2n2222 jan 2N706 JAN
2002 - Not Available

Abstract:
Text: 2N930A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


Original
PDF 2N930A O206AA) 19-Jun-02
transistor 2N929

Abstract:
Text: NOTOROLA SC {DIODES/OPTO* 34 ÏF|bBb7ESS 0 0 3 7 ^ 1 f 6367255 MOTOROLA SC ( D I O D E S /OPTO) ' 34C 37999 7 " D . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) ~7 DIE NO. - NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types: 2N929.A 2N930.A 2N5172 MMCM930 MMT930 MPS929.A MPS930.A MPS5133 MPS5172 MPS6S73 MPS6574 MPS6575 MPS6576 MPSA10 MPSA20 MPSD06 2C5088 General-purpose lownolse amplifier


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PDF DMB100 2N929 2N930 2N5172 MMCM930 MMT930 MPS929 MPS930 MPS5133 MPS5172 transistor 2N929 2C5088 MPS-A10 MPSA20 SILICON DICE motorola SILICON SMALL-SIGNAL DICE MPSA10
2N1025

Abstract:
Text: 100/300 0.01 1.0 10/0.5 30 8 3 15.7* TO-18 2N930A NPN 500 60 45 6 100/300 0.01 0.5 10/0.5 45 6 4 15.7


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PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 50N2484 2N2484A 2N1025 2n2511 2N2510 2N930 2N2280
2N784

Abstract:
Text: . 2N9I1 2NQ12 7N9U 2N9I5 2N9I6 2N9I7 2N918 2N929 2N929A 2N930 2N930A 2N956 2N98I 2N995 NPN NPN NPN NPN NPN


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PDF 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N784 2N834 N709
2N2210

Abstract:
Text: 45 100 300 0.01.5.0 30 TO-18 2N930A 45 60 100 300 0.01.5.0 45 TO-18 BCF81 45 50 420 800 2/5.0 TO


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PDF bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 2N3827 PN3694 MPS6564 2N2586
1N760

Abstract:
Text: 2N870 2N871 2N910. 2N9I1 2NQ12 7N9U 2N9I5 2N9I6 2N9I7 2N918 2N929 2N929A 2N930 2N930A ÎN956


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PDF 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N784 2N834 1N760 1N760A in995 2N783 2N760A 2N760
2N2511

Abstract:
Text: 2N930A 2N930B 2N2483 2N2484 2N2484A 2N2509 2N2510 2N 2511 2N2586 2N2604 2N2605 2N 2861 2N2862 2N3117


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PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 2N929 2N929A 2N2511 2N2708
MPS6566

Abstract:
Text: NATL SEMICOND (DISCRETE) 22E D bS01130 D03777M 7 NPN General Purpose Transistors by Ascending Vceo (continued) Part Type PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 2N3827 2N5962 2N930 2N930A BCF81 BCW66F BCW72 BCW81 BCX70G BCX70H BCX70J MMBT100 MMBT100A MMBT3642 MMBT3693 MMBT3694 MMBT5962 MMBT930A MMBTA18 MPS3693 M PS3694 MPS3826 MPS3827 MPS6564 MPS6565 MPS6566 MPS6575 MPS6576 MPSA18 PN100 PN100A PN3642 PN3693 PN3694 PN930 2N3053 2N3416 2N3417 2N4409 2N5209 2N5210


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PDF bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566
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