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2N869A datasheet (36)

Part Manufacturer Description Type PDF
2N869A Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO18 / Vceo=25 / Ic=0.1 / Hfe=20min / fT(Hz)=100M / Pwr(W)=0.36 Original PDF
2N869A Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=25 / Ic=0.1 / Hfe=20min / fT(Hz)=100M / Pwr(W)=0.36 Original PDF
2N869A Central Semiconductor METAL CAN Transistors Scan PDF
2N869A Central Semiconductor Metal Can Transistors Scan PDF
2N869A Crimson Semiconductor Transistor Selection Guide Scan PDF
2N869A General Diode Transistor Selection Guide Scan PDF
2N869A Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N869A Motorola The European Selection Data Book 1976 Scan PDF
2N869A Motorola NPN Silicon Switching Transistors Scan PDF
2N869A Motorola Power Transistor Selection Guide Scan PDF
2N869A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N869A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N869A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N869A Others Semiconductor Master Cross Reference Guide Scan PDF
2N869A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N869A Others Shortform Electronic Component Datasheets Scan PDF
2N869A Others Shortform Transistor Datasheet Guide Scan PDF
2N869A Others Vintage Transistor Datasheets Scan PDF
2N869A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N869A Others Transistor Shortform Datasheet & Cross References Scan PDF

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2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Text: MOTOROLA SC XSTRS/R F 15E D | b3b72S4 QQñbaSM MAXIMUM RATINGS 2N869A Rating Symbol 2N869A , CHARACTERISTICS Characteristic Symbol 2N869A 2N4453 Unit Thermal Resistance, Junction to Cass Reue 146 97.5 , , VBE = 0) 2N869A , 2N4453 V(BR)CES 25 — Vdc Collector-Emitter Sustaining Voltage(1) (lC = 10 mAdc, lB = 0) VCEO(sus) 18 — Vdc Collector-Base Breakdown Voltage dC = 10 iiAdc, l£ = 0) 2N869A , 2N4453 , Collector Cutoff Current (Vcs = 15 Vdc, Ie = 0, Ta = 150°C) 2N869A ICBO — 26 fiAdc Collector Cutoff


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PDF b3b72S4 2N869A 2N869A 2N4453 2N4453 2N869A JAN 2N869A JANTX TO206AA 313 Motorola
2010 - bjt specifications

Abstract: 2N869A
Text: ://store.americanmicrosemiconductor.com/ 2n869a.html 4/12/2010 2N869A Si PNP LP HF BJT 3.92 Transistors Bipolar Silicon PNP , http://store.americanmicrosemiconductor.com/ 2n869a.html 4/12/2010 American Microsemiconductor , 2N869A Si PNP LP HF BJT 3.92 Transistors Bipolar Silicon PNP Low-Power High-Freq. Page 1 of 2 , Part Number: 2N869A 2N869A Si PNP LP HF BJT Enter code INTER3 at checkout.* CUSTOMER , Available from $ 3.92 Manufacturer Partnumber: List Price: Our Price: You Save: 2N869A $ 4.90


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PDF 2N869A 2N869A com/2n869a bjt specifications
2N4453

Abstract: 2N869A
Text: SEMICONDUCTOR! TECHNICAL DATA I 2N869A 2N4453. *^ CRYSTALONCS 2805 Veteraris Highway Suite 14 , applications. 2N869AJAN Device is on Product Discontinuance Notice M A X IM U M R A T IN G S Rating , Device Dissipation @ TA = 25 C Derate above 25 C Operating Junction and Storage Temperature Range 2N869A 2N4453 2N869A 2N4453 TJ- Tstg Symbol v CEO v CBO v EBO Value 18 25 50 200 Unit Vdc Vdc Vdc mAdc mW mW rc > c PT 360 300 2.1 1.71 -6 5 to 200 "C CASE 22-03, STYLE 1 TO-206AA (TO-10) 2N869A E L E


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PDF 2N869A 2N4453. J1779 2N869AJAN 2N4453 O-206AA 2N869A
2N869A

Abstract: 869A 2N869
Text: 2N869A ELECTRICAL. CHARACTERISTICS (continued! (T ^ = 25'C unless otherw ise noted.} C haracteristic , LA SM A LL-SIG N A L TR AN SISTO R S, FETs AND DIODES 3 -9 2N869A FIGURE 4 - CURRENT-GAIN - , SWITCHING TEST CIRCUIT VALUES ^ ¡n Volts ton*d 2N869A 2 N 869A - 7 .0 + 6.0 VßB V olts - 3 .0 - 4 .0


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PDF 2N869A 869A 2N869
2N869A

Abstract: No abstract text available
Text:  2N869A ^IP NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING PNP SWITCHING TRANSISTOR MAXIMUM RATINGS RATINGS SYMBOL 2N869A UNITS Collector-Emitter Voltage vCE0 -18 Vdc Collector-Base Voltage VcBO -25 Vdc Emitter-Base Voltage Vebo -5.0 Vdc Collector Current — Continuous Ic -200 mAdc Total Power Dissipation @ Tc , 0.050 TYP T4-4.8-860-325 REV: - 2N869A ^MW ^NEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS


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PDF 2N869A 2N869A
Not Available

Abstract: No abstract text available
Text: Back to Bipolar Small Signal 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS · HIGH CURRENT GAIN · LOW SATURATION VOLTAGE · FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous Total Power Dissipation @ T c = 25"C Tc = 100°C O perating & Storage , 2N869A ^1 P *NEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted


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PDF 2N869A
2002 - 2N869A

Abstract: No abstract text available
Text: 2N869A Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­


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PDF 2N869A O206AA) 5/10m 2-Aug-02 2N869A
TO-18 amps pnp transistor

Abstract: BC107 BC108
Text: NEW ENGLAND SEMICONDUCTOR PNP TRANSISTOR TO-18 PACKAGE TO-18 T0206AA SMALL SIGNAL V ceo (sus) VOLTS 40 60 40 60 60 60 80 120 60 60 60 80 45 60 60 80 60 80 200 300 45 25 25 18 Ic 1>FE @ V V c e V cE (M t) DEVICE TYPE 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029 2N6432 2N6433 BC107 BC108 BC109 2N869A (max) AMPS 0.6 0.6 0.6 0.6 0.2 0.2 0.1 0.1 0.05 0.05 0.2 0.2 0.2 0.2 1.0 1.0 1.0 1.0 0.5 0.5 0.2 0.2 0.2 0.2


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PDF T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108
Not Available

Abstract: No abstract text available
Text: 2N869A Min 25 TO-52 25 2N995 TO-52 20 15 2N995A TO-52 20 15 4 2N2894 2N2894A TO-52 12 TO-52 TEST CONDITIONS: 12 'c 12 12 30 m A - V CC - 3V. ~ IB


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PDF 2N869 2N869A 2N995 2N995A 2N2894 2N2894A
2002 - Not Available

Abstract: No abstract text available
Text: 2N869A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


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PDF 2N869A O206AA) 5/10m 19-Jun-02
2N869A

Abstract: 2N4453 2N869A JANTX
Text: r_-! I INCH-POUND I i_I MII-S-19500/283D AMENDMENT 1 25 June 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N869A AND 2N4453 JANTX AND JANTXV This amendment forms a part of MIL-S-19500/283D, dated 28 July 1992, and is approved for use by all Departments and Agencies of the Department of Defense. PAGE 1 1.3, Ic column: Delete "200" (two places), and substitute "100" (two places). PAGE 7 TABLE I, subgroup 2, Breakdown voltage, collector to


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PDF MII-S-19500/283D 2N869A 2N4453 MIL-S-19500/283D, 2N869A JANTX
2002 - Not Available

Abstract: No abstract text available
Text: 2N869A Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


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PDF 2N869A O206AA) 5/10m 16-Jul-02
2N869

Abstract: 2n726 2N869 MOTOROLA SILICON SMALL-SIGNAL DICE 2N3209 2N3012 2N3248 transistor dice
Text: MOTOROL A SC -CDI0DES/0PT03- Ï4 D E ( b 3 L 7 S 5 S 003 7^7 7 H | 8367255 ^ M O T O R OL A SC ( D IO D E S /O P T O ) 34C 37977 D T-37- SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) DIE NO. - PNP LINE SOURCE - DSL44 This die provides performance similar to that of the following device types: 2N726* 2N869.A 2N996* 2N2894 2N3012 2N3209' 2N3248* 2N3249 2N4453 MMT73 2C2894 Designed for logic switching applications. ` No longer available METALLIZATION 7


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PDF -CDI0DES/0PT03- T-37- DSL44 2N726* 2N869 2N996* 2N2894 2N3012 2N3209' 2N3248* 2n726 2N869 MOTOROLA SILICON SMALL-SIGNAL DICE 2N3209 2N3248 transistor dice
2N784

Abstract: 35-140 2N834 2N783 2N760A 2N760 2N706 2N703 2N699 2N697
Text: CRIMSON SEMICONDUCTOR INC ~TÍ DE| ESIMCHLi □□□□2CI2 a 2514096 CRIMSON SEMICONDUCTOR INC 99D 00292 O 3¿T- DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB HFE @ VC & IC COB fT NF IVl MIN IVI MIN (VI MX (mAI MAX ltf| MlN MAX (V| | 2N869A 2N870 2N871 2N910


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PDF 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N784 2N834 35-140
2N3012

Abstract: No abstract text available
Text: mAdc Watts mVW°C Watts mW/°C SWITCHING TRANSISTOR PNP S IU C O N °c Refer to 2N869A far graphs


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PDF 2N3012 O-206AA) 2N869A 2N3012
TO-18 amps pnp transistor

Abstract: 2N4027 2N2907aA IC 8002 transistor BC109 TRANSistor BC108 2N2906 2n869a 2n3963 2N3497
Text: 0.2 200/800@2/5 0.25@10/0.5 4.5 150 2N869A 18 0.2 40/120@10/5 0.15@10/1 6 400 Available in JAN


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PDF 2N2906 T0206AA 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor 2N4027 IC 8002 transistor BC109 TRANSistor BC108 2n869a 2n3963
TO205AD

Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
Text: 4bE J > m b3b?254 OOlEbfil 0 flOTb T-91-60 MOTOROLA SC (XSTRS/R F) Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver i: aa/.h nrftnn ehnwn the devices are listed in order of decreasing turn-on time (ton)Device Number 2N914 2N708 2N2369A 2N3227 2N3735 2N3506 2N3507 2N3737 TO-206AC 2N3013 2N4449 2N869A 2N3634 2N3635 2N3636 2N3637 2N4033 2N3467


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PDF T-91-60 2N914 2N708 2N2369A 2N3227 2N3735 2N3506 2N3507 2N3737 O-206AC TO205AD 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
2N709A

Abstract: 2N915 2N720A 2N719A 2N718A 2N717 2n930b 2N708 2N706C 2N703
Text: 10 100 350 1.0 6.0 0.1 5.0 9.0 . . — . 2N869A PNP AMPUSWITCH 25 18 5.0 0.01 15 40 120 10 5.0


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PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N914 2N915 2N916 2N929A 2N720A 2N719A 2n930b
1N760

Abstract: 1N760A in995 2N760 2N706 2N703 2N699 2N697 2N656 2NI13
Text: CRIMSON SEMICONDUCTOR INC ~TÏ DE I BilMOTb □□□□2CI2 & 2514096 CRIMSON SEMICONDUCTOR INC 99D 00292 O 3¿T- DEVICE TYPt PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB HFE @ VC & IC COB ET NF IV! MIN IVI MIN (VI MIN (mAI MAX ltf| MlN MAX (V| | 2N869A


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PDF 2N656 2N697 2N699 2N703 2N706 2N760 2N760A 2N783 2N784 2N834 1N760 1N760A in995 2N760 2NI13
2004 - 2N947

Abstract: 2N719A 2N726 2N720A 2N718A 2N709A 2N708 2N706C 2N703 2N915
Text: 2N869A PNP AMPL/SWITCH 25 18 5.0 0.01 15 40 120 10 5.0 0.15 10 6.0


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PDF 2N703 2N706C 2N708 2N70- 2N916 2N929A 2N930B 2N947 2N956 2N947 2N719A 2N726 2N720A 2N718A 2N709A 2N708 2N706C 2N703 2N915
Not Available

Abstract: No abstract text available
Text: - 60 2025- 5 5 1 1 1 t 1 10 10 10 8 8 4 4 4 50 50 200 200 350 2NB35 2N869 2N869A 2N870


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PDF 2N656 2N697 2N699 2N703 2N706 2N708 2N709 2N720 2N722 2N930
Not Available

Abstract: No abstract text available
Text: 2N6677 2N6678 2N6686 2N6687 2N6688 2N6751 2N6752 2N6753 2N6754 2N697 2N698 2N727 2N835 2N869 2N869A 2N914


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PDF 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462
Not Available

Abstract: No abstract text available
Text: 200 350 2NB3!) 2N869 2N869A 2N870 2N87I NPN PNP PNP NPN NPN TO 1 8 TO-18 TO-18 TO-1 8 TO


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PDF 2N656 2N697 2N699 2N703 2N706 2N708 2N709 2N720 2N722 2N930
N2369

Abstract: 2N4260 2N914 2N869A 2N708 2N706 2N4261 2N3227 2N2369A BSX29
Text: TO-18 TRANSISTORS FAST SPEED SWITCH NPN Device Type Polarity VcEO , VCER<+) (Volts) Ic max. (mA) HFE @ IC VCE (mA) (Volts) VCE (sat) max. (V) 2N706 NPN 20 (+) 20 10 1 0.6 2N708 NIPN 15 30 10 1 0.4 2N914 NPN 15 150 30 10 1 0.7 2 N2368 NPN 15 200 20 10 1 0.25 2 N2369 NPN 15 200 40 10 1 0.25 2N2369A NPN 15 200 40 10 0.35 0.2 2N3227 NPN 20 200 100 10 1 0.25 BSX90 NPN 12 200 20 10 0.35 1.0 2N4260 NPN 15 30 30 10 1 0.35 2N4261 NPN 15 30 30 10 1 0.35 FAST SPEED SWITCH PNP 2N869A PNP 18 200 40


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PDF 2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N869A BSX29
2N4854

Abstract: 2N4855 2N4453
Text: M O T O R OL A SC X S T R S /R F 12E D I t,3b755M 0001,450 Ô | 2N4453 For Specifications, See 2N869A Data. T-A7-2Ì9 2N4854 2N4855 M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Collector 1 to Collector 2 Voltage Voltage Rating any Lead to Case Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VcEO VC1C2 VCBO Vebo ic Value 40 ±200 ±200 60 5.0 600 One Die Total Device Dissipation @ T a = 25°C Derate above 25°C Total Device Dissipation @ T c -


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PDF 3b755M 2N4453 2N869A 2N4854 2N4855 2N4855 2N4453
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