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2009 - 2N7550

Abstract: 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
Text: , 2N7493, 2N7496, 2N7545, and 2N7547. 5 MIL-PRF-19500/741A 2N7485, 2N7488, 2N7497 , 2N7500, 2N7486 , A-version die dimensions, 2N7485, 2N7488, 2N7497 , 2N7500, 2N7486, 2N7489, 2N7498, 2N7501, 2N7487, 2N7490 , 3 4 2N7485 or 2N7488 or 2N7497 or 2N7500 MIL-PRF-19500/705, 2N7488 130 N 3 5 , 2N7481 or 2N7484 or 2N7493 or 2N7496 2N7485 or 2N7488 or 2N7497 or 2N7500 2N7486 or 2N7489 or 2N7498 or , 2N7485 or 2N7488 or 2N7497 or 2N7500 JANHCAR2N7488, JANKCAR2N7488, JANHCAF2N7488, JANKCAF2N7488


Original
PDF MIL-PRF-19500/741A MIL-PRF-19500/741 MIL-PRF-19500. 2N7550 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
2N7498T2

Abstract: 2N7497 2N7499T2 2N7497T2 IRHF57133SE MIL-PRF19500 MOSFET cross-reference 2N7499 mil-prf-19500/JANTX2N5152
Text: RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2 , ratings. TA = +25°C, unless otherwise specified. Type PT (1) TC = +25°C RJC W 2N7497T2 , rated VDS Max rDS(on) (1) VGS = 12V, ID = ID2 EAS TJ = +25°C V dc 2N7497T2 2N7498T2 , * Thermal impedance 2/ 3161 See 4.3.3 Breakdown voltage drain to source 2N7497T2 2N7498T2 , source on-state resistance 2N7497T2 2N7498T2 2N7499T2 3421 VGS = 12 V dc, condition A, pulsed


Original
PDF MIL-PRF-19500/706B MIL-PRF-19500/706A 2N7497T2, 2N7498T2, 2N7499T2, MIL-PRF-19500. 2N7498T2 2N7497 2N7499T2 2N7497T2 IRHF57133SE MIL-PRF19500 MOSFET cross-reference 2N7499 mil-prf-19500/JANTX2N5152
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