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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N6849 Infineon Technologies AG Avnet 16 $10.19 $8.19
2N6849 Infineon Technologies AG Chip1Stop 212 $10.53 $8.56
2N6849 International Rectifier Future Electronics - $11.28 $8.26
2N6849UJANTX Infineon Technologies AG Avnet - $60.19 $53.09
CDDATAPACK/2N6849JANTX Infineon Technologies AG Avnet 900 $9.99 $9.79
CDDATAPACK/2N6849JANTX Infineon Technologies AG Avnet - - -
CDDATAPACK/2N6849JANTX Infineon Technologies AG Avnet - - -
DATA-2N6849JANTX Infineon Technologies AG Chip1Stop 4 $390.91 $390.91
JANS2N6849 Infineon Technologies AG Avnet - $410.89 $299.29
JANS2N6849 Infineon Technologies AG Avnet - $410.89 $299.29
JANS2N6849U Infineon Technologies AG Avnet - $420.29 $312.39
JANS2N6849U Infineon Technologies AG Avnet - $420.29 $312.39
JANTX2N6849 International Rectifier Future Electronics - $10.37 $8.50
JANTX2N6849 Microsemi Corporation Bristol Electronics 19 - -
JANTX2N6849 International Rectifier Bristol Electronics 6 - -
JANTX2N6849 Microsemi Corporation Bristol Electronics 14 - -
JANTX2N6849U International Rectifier Future Electronics - $69.68 $56.72
JANTXV2N6849 Infineon Technologies AG Avnet - $22.09 $19.49
JANTXV2N6849 International Rectifier Future Electronics - $28.34 $20.99
JANTXV2N6849U Infineon Technologies AG Avnet - $75.89 $66.89
JX2N6849CRC Harris Semiconductor New Advantage Corporation 47 - -

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2N6849 datasheet (21)

Part Manufacturer Description Type PDF
2N6849 International Rectifier HEXFET TRANSISTORS Original PDF
2N6849 Microsemi P Channel MOSFET; Package: TO-39; Original PDF
2N6849 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V TO-205AF TO-39 Original PDF
2N6849 Semelab P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. Original PDF
2N6849 Semelab P-Channel Power MOSFET Original PDF
2N6849 Semelab FET, 2 VThreshold, ID 6.5 A Original PDF
2N6849 Semelab P-CHANNEL POWER MOSFET Original PDF
2N6849 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
2N6849 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
2N6849 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849 Others FET Data Book Scan PDF
2N6849 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6849 Others Shortform Datasheet & Cross References Data Scan PDF
2N6849P Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849TX Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849TXV Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6849U Microsemi P Channel MOSFET; Original PDF

2N6849 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor 564H

Abstract: 2n6849 jantxv JANHCA2N6849 2N6849U 2N6849 2N6849 JANTX 2N6851 2N6849 JANS IRFF9232 IRFF9130
Text: , P-CHANNEL, SILICON, TYPES 2N6849 , 2N6849U , 2N6851 AND 2N6851U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC , 2N6849 , 2N6849U 2N6851, 2N6851U W 25 25 0.8 0.8 VDS C/W V dc 5.0 5.0 -100 -200 , Max -100 -200 -2.0 -2.0 2N6849 , 2N6849U 2N6851, 2N6851U Max IDSS1 VGS = 0 VDS = 80 , to source 2N6849 , 2N6849U 2N6851, 2N6851U 3407 Bias condition C, VGS = 0V, ID = -1 mA dc , , condition A, pulsed (see 4.5.1), ID = rated ID1, (see 1.3) rDS(on)1 rDS(on)2 2N6849 , 2N6849U


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PDF MIL-PRF-19500/564H MIL-PRF-19500/564G 2N6849, 2N6849U, 2N6851 2N6851U, MIL-PRF-19500. transistor 564H 2n6849 jantxv JANHCA2N6849 2N6849U 2N6849 2N6849 JANTX 2N6849 JANS IRFF9232 IRFF9130
2012 - DD 127 D transistor

Abstract: 2N6849
Text: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is , ://www.microsemi.com. FEATURES • • JEDEC registered 2N6849 number. TO-205AF (TO-39) Package JAN , applications. (surface mount) 2N6849U MAXIMUM RATINGS @ T A = +25ºC unless otherwise stated Parameters , Corporation Page 1 of 7 2N6849 MECHANICAL and PACKAGING • • • • • CASE


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PDF 2N6849 MIL-PRF-19500/564 2N6849 O-205AF T4-LDS-0009, DD 127 D transistor
2N6849

Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
Text: File Number 2219 Rugged Power MOSFETs 2N6849 Avalanche-Energy-Rated P-Channel Power MOSFETs , TERMINAL DIAGRAM d 92CS-43262 P-CHANNEL ENHANCEMENT MODE The 2N6849 is an advanced power MOSFET , . This type can be operated directly from integrated circuits. The 2N6849 is supplied in the JEIDEC TQ , 2N6849 Units Vds Drain-Source Voltage -100" V Vdg Drain-Gate Voltage (Rqs - 20k0) -100" V Id ® Tc - , 300 (0.063 in. (1.6mm) from case for 10s) °c 6-325 Rugged Power MOSFETs_ 2N6849 Electrical


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PDF 2N6849 -100V 92CS-43262 2N6849 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6849 JANTX b 43306 2n6849 mosfet 2n6849 jantxv
2N6849

Abstract: No abstract text available
Text: Tem ic S U .C O -X _ 2N6849 P-Channel Enhancement-Mode Transistor Product Summary V(BR)I)SS (V) -100 r DS(on) (Q ) 0.30 ID (A) -6 .5 Parametric limits in accordance , Lim it U nit 175 5.0 °c:/w P-37010-Rev. A (06/06/94) 6-165 T e m ic 2N6849 , 2N6849 Topical Characteristics (25 °C Unless Otherwise Noted) Negative signs omitted for clarity , ate Charge (nC) 6-167 T e m ic 2N6849 Typical Characteristics (25 °C Unless Otherwise Noted


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PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06/06M 2N6849
1995 - 2N6849

Abstract: No abstract text available
Text: 2N6849 Siliconix PChannel EnhancementMode Transistor Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) -100 0.30 -6.5 Parametric limits in accordance with MILS19500/564 where , P37010Rev. A(06/06/94) Unit _C/W 1 2N6849 Siliconix Specifications (TJ = 25_C Unless , P37010Rev. A(06/06/94) 2N6849 Siliconix Typical Characteristics (25_C Unless Otherwise Noted , Qg - Total Gate Charge (nC) 3 2N6849 Siliconix Typical Characteristics (25_C Unless


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PDF 2N6849 MILS19500/564 O205AF P37010Rev. 2N6849
2N6849

Abstract: 2n6849 mosfet
Text: 2 3 HARRIS A u g u s t 19 91 2N6849 Avalanche-Energy-Rated P-Channel Power MOSFETs Package T0 -20 5A F BOTTOM VIEW Features m -b CCA 4 ftr · .5 A , -lU U tll V · rDS(on) = 0 .3 0 n · , Otherwise Specified 2N6849 Drain-Source Voltage , . Copyright © Harris Corporation 1991 File Num ber 2219 5 -8 Specifications 2N6849 Electrical , \ V \ < Ö O 1 » W 1 o > < V \ \ \ V P-CHANNEL POWER MOSFETs 2N6849 O -1 0


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PDF 2N6849 92CS-4329B 92CS-43320 92CS-43300 92CS-43307 2N6849 2n6849 mosfet
Not Available

Abstract: No abstract text available
Text: DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = , T4-LDS-0009 Rev. 2 (091456) 2N6849 TO-205AF (formerly TO-39) Max. Unit Vdc -4.0 Vdc , -19500/564 Figure 1 – Case Outline and PIN Configuration for 2N6849 T4-LDS-0009 Rev. 2 (091456 , -19500/564 Figure 2 – Case Outline and PIN Configuration for 2N6849U T4-LDS-0009 Rev. 2 (091456


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PDF MIL-PRF-19500/564 2N6849 2N6849U T4-LDS-0009
1996 - 2N6849

Abstract: W41A
Text: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) ­100 0.30 ­6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable , , 1-408-970-5600. Please request FaxBack document #1489 . Siliconix P-37010-Rev. A, 06-Jun-94 1 2N6849 , -37010-Rev. A, 06-Jun-94 2N6849 Typical Characteristics (25_C Unless Otherwise Noted) Output , -37010-Rev. A, 06-Jun-94 50 0 10 20 30 Qg ­ Total Gate Charge (nC) 3 2N6849 Typical


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PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6849 W41A
Not Available

Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM , POWER MOSET IRFF9130 / 2N6849 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols , Number 3098 Issue 2 Page 2 of 3 P-CHANNEL POWER MOSET IRFF9130 / 2N6849 MECHANICAL DATA


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PDF IRFF9130 2N6849 O-205AF -100V 500mJ O-205AF)
2011 - 2n6849

Abstract: TO-205AF Package 2n6849 mosfet irff9130
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 · · · · MOSFET Transistor In A Hermetic Metal TO-205AF Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise , 2 Page 1 of 3 Website: http://www.semelab-tt.com P-CHANNEL POWER MOSET IRFF9130 / 2N6849 , of 3 P-CHANNEL POWER MOSET IRFF9130 / 2N6849 MECHANICAL DATA Dimensions in mm (inches) 8.64


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PDF IRFF9130 2N6849 O-205AF -100V -100V 500mJ -55semelab-tt O-205AF) 2n6849 TO-205AF Package 2n6849 mosfet
2012 - Not Available

Abstract: No abstract text available
Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS Compliant P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to , mount equivalent of JEDEC registered 2N6849 number. JAN, JANTX, JANTXV and JANS qualifications are , . U-18 LCC Package Also available in: TO-205AF (TO-39) package (Leaded Top Hat) 2N6849 , of 8 2N6849U MECHANICAL and PACKAGING · · · · · CASE: Ceramic LCC-18 with kovar gold plated


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PDF 2N6849U MIL-PRF-19500/564 2N6849U O-205AF 2N6849 MIL-PRF-19500/564. T4-LDS-0009-1,
2009 - 2n6849 mosfet

Abstract: 2N6849 2N6849 JANTX 80v P-Channel MOSFET 2n6849u ADC 0803 datasheet
Text: DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C , . 2 (091456) 2N6849 TO-205AF (formerly TO-39) Max. Unit Vdc -4.0 Vdc IGSS1 IGSS2 , Configuration for 2N6849 T4-LDS-0009 Rev. 2 (091456) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street , Configuration for 2N6849U T4-LDS-0009 Rev. 2 (091456) Page 4 of 4 Microsemi


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PDF MIL-PRF-19500/564 2N6849 2N6849U T4-LDS-0009 2n6849 mosfet 2N6849 2N6849 JANTX 80v P-Channel MOSFET 2n6849u ADC 0803 datasheet
Not Available

Abstract: No abstract text available
Text: ■I 4302271 ^ h a 0DS4MTS r r 1Û5 ■HAS 2N6849 i s Avalanche-Energy-Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • - 6 .5 A , - 1 OOV * rDS(on) = 0.30H • S in g le P u ls e A v a la n c h e E n e rg , 5 ° C ) Unless O th erw ise Specified 2N6849 Drain-Source Voltage , Specifications 2N6849 Electrical Characteristics @ t c = 25°c (umess otherwise specified) Mm Typ Max


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PDF 2N6849
2012 - DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS Compliant P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to , mount equivalent of JEDEC registered 2N6849 number. JAN, JANTX, JANTXV and JANS qualifications are , . U-18 LCC Package Also available in: TO-205AF (TO-39) package (Leaded Top Hat) 2N6849 , Microsemi Corporation Page 1 of 8 2N6849U MECHANICAL and PACKAGING · · · · · CASE: Ceramic LCC


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PDF 2N6849U MIL-PRF-19500/564 2N6849U O-205AF 2N6849 MIL-PRF-19500/564. T4-LDS-0009-1, DD 127 D TRANSISTOR transistor DD 127 D 2N6849 JANTX u18 transistor
MOSFET

Abstract: 2N6849
Text: <£iuni-(loneLuikot ZPioauott., Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6849 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL POWER MOSFETs VDSS 'D(cont) / / -'- f \ I <« T « j*'r-f(p)1—r-3 *'. ' \; ; -' / 0,71 10029) ^DS(on) -100V -6.5A 0.30Q . ' • • ' , verify that datasheets are current before placing orders. 2N6849 ELECTRICAL CHARACTERISTICS (Tcase


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PDF 2N6849 6Mog26> -100V 00A/u MOSFET 2N6849
2002 - 2N6849

Abstract: L1725
Text: 2N6849 MECHANICAL DATA Dimensions in mm (inches) P­CHANNEL POWER MOSFETs 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 VDSS ID(cont) RDS(on) - 100V - 6.5A 0.30 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021 , Document Number 3098 Issue 1 2N6849 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise


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PDF 2N6849 O-205AF) 2N6849 L1725
2000 - 2N6849

Abstract: No abstract text available
Text: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm (inches) P­CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 , Prelim. 9/00 SEME 2N6849 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated


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PDF 2N6849 300ms, 2N6849
2000 - L1725

Abstract: 2N6849
Text: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm (inches) P­CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 , Prelim. 9/00 SEME 2N6849 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated


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PDF 2N6849 300ms, L1725 2N6849
Not Available

Abstract: No abstract text available
Text: 2N6849+JANTXV Transistors P-Channel Enhancement MOSFET Military/High-RelY V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case5.0 Thermal Resistance Junc-Amb.175 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS


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PDF 2N6849
JANTX2N6845

Abstract: No abstract text available
Text: Government and Space International lI O R B e c t if ie r HEXFET Power MOSFETs Hermetic Package P-Channel Part Number IRFF9024 IRFF9110 IRFF9120 2N6845 JANTX2N6845 JANTXV2N6845 IRFF9130 2N6849 JANTX2N6849 JANTXV2N6849 IRFF9210 IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 IRFF9230 2N6851 JANTX2N6851 JANTXV2N6851 BVpss (V) -60 -100 -100 -100 -100 -100 -100 -100 -100 -100 -200 -200 -200 -200 -200 -200 -200 -200 -200 RDS(on) (Ohms) 0.28 1.2 0.60 1.2 1.2 1.2 0.30 0.30 0.30 0.30 3.0 1.5 1.5


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PDF IRFF9024 IRFF9110 IRFF9120 2N6845 JANTX2N6845 JANTXV2N6845 IRFF9130 2N6849 JANTX2N6849 JANTXV2N6849
2002 - 2N6849 JANS

Abstract: 2n6849 jantxv 2N6849 p-channel MOSFET 100V
Text: 2N6849 Dimensions in mm (inches). P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET. 5.08 (0.200) typ. VDSS = 100V 1 ID = 6.5A 2.54 (0.100) 2 3 RDS(ON) = 0.3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) All Semelab hermetically sealed products can be processed


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PDF 2N6849 O205AF) 11-Oct-02 2N6849 JANS 2n6849 jantxv 2N6849 p-channel MOSFET 100V
Not Available

Abstract: No abstract text available
Text: 2N6849+JANS Transistors P-Channel Enhancement MOSFET Military/High-RelY V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case5.0 Thermal Resistance Junc-Amb.175 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS


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PDF 2N6849
Not Available

Abstract: No abstract text available
Text: 2N6849+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case5.0 Thermal Resistance Junc-Amb.175 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS


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PDF 2N6849
IRF9240

Abstract: IRF9143 IRF9513 IRF9632 IRF9132 IRFD9110 IRF9511 IRF9241 2n6804 irfp9240
Text: irff9132 6 0.6 370 irf9520 6.5 0.3 500 irff9130 6.5 0.3 n.r. 2n6849 * 10 0.4 500 irf9132


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PDF O-204 O-205 T0-220 O-247 irfd9113 irfd9123 irf9513 irf9511 irff9123 irff9121 IRF9240 IRF9143 IRF9513 IRF9632 IRF9132 IRFD9110 IRF9511 IRF9241 2n6804 irfp9240
2008 - DIODE 65A

Abstract: 2N6849
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain ­ Source Voltage VDS -100 Vdc Gate ­ Source Voltage VGS ± 20 Vdc ID1 -6.5 Adc ID2 -4.1 Adc


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PDF MIL-PRF-19500/564 2N6849 -10Vdc, -40Vdc -100A/ T4-LDS-0009 DIODE 65A 2N6849
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