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2N6782 Infineon Technologies AG Avnet - - -
2N6782 Infineon Technologies AG Chip1Stop 6,767 $7.05 $7.05
2N6782 TT Electronics Power and Hybrid / Semelab Limited Allied Electronics & Automation - $9.67 $4.25
2N6782 International Rectifier Future Electronics - $8.81 $6.45
2N6782 Microsemi Corporation Chip1Stop 1 $8.86 $8.86
2N6782JANTX Infineon Technologies AG Avnet - - -
2N6782JANTX International Rectifier ComS.I.T. 11 - -
JANTX2N6782 International Rectifier New Advantage Corporation 76 $16.80 $15.68
JANTX2N6782 International Rectifier Future Electronics 78 $11.76 $9.80
JANTX2N6782 International Rectifier New Advantage Corporation 84 - -
JANTX2N6782 International Rectifier Bristol Electronics 70 - -
JANTX2N6782 Infineon Technologies AG Chip1Stop 4,511 $11.55 $9.40
JANTX2N6782 OPL Bristol Electronics 6 $10.08 $6.55
JANTX2N6782U Infineon Technologies AG Avnet - - -
JANTXV2N6782 International Rectifier Future Electronics - $45.59 $31.91
JANTXV2N6782 Infineon Technologies AG Avnet - - -
JANTXV2N6782 Infineon Technologies AG Chip1Stop 8 $34.35 $34.35
JANTXV2N6782U Infineon Technologies AG Avnet - - -

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2N6782 datasheet (29)

Part Manufacturer Description Type PDF
2N6782 Fairchild Semiconductor TRANS MOSFET N-CH 100V 3.5A 3TO-205AF Original PDF
2N6782 International Rectifier HEXFET TRANSISTORS Original PDF
2N6782 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF Original PDF
2N6782 Microsemi N Channel MOSFET; Package: TO-39; Original PDF
2N6782 Semelab FET, 2 VThreshold, ID 3.5 A Original PDF
2N6782 Semelab N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. Original PDF
2N6782 Semelab N-CHANNEL POWER MOSFET ENHANCEMENT MODE Original PDF
2N6782 General Electric N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. Scan PDF
2N6782 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
2N6782 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
2N6782 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
2N6782 Motorola European Master Selection Guide 1986 Scan PDF
2N6782 Others Shortform Datasheet & Cross References Data Scan PDF
2N6782 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6782 Others FET Data Book Scan PDF
2N6782 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6782 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6782 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6782 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6782 Semelab MOS Transistors Scan PDF

2N6782 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - 2N6786

Abstract: 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
Text: 2N6782 , 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782 , 2N6784 , information, visit our website http://www.microsemi.com. FEATURES · · · JEDEC registered 2N6782 , 2N6784 , high-reliability applications. U-18 LCC package (surface mount) 2N6782U & 2N6786U MAXIMUM RATINGS @ T A = , Drain-Source Voltage, dc 2N6782 2N6784 2N6786 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC


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PDF 2N6782, 2N6784 2N6786 MIL-PRF-19500/556 2N6786 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
2N6782

Abstract: 2N6781 lei-7
Text: 25°C unless otherwise specified) Parameter 2N6781 2N6782 Vos Drain source voltage 60V 100 V V[>GR , . Uniti Tilt Conditions BVOSS 2N6781 60" V VGS- 0 Voltage 2N6782 100' V IQ'0.25 m A VGS(th , VGS " 10V 2N6782 3.5 A vds>2Vds(on). vgs " 1ov VDS(on) Static Drain-Source On-State 2N6781 2.r V VQS» ,qv , ID- Voltage1 2N6782 2.1* V Vgs " 10V . ID * 3'5A RoSlon) Static Drain-Source On-State 2N6781 0.6" n VGS " «V , lD = 2.25A Resistance1 2N6782 0.6* n Vqs - 10V , lD - 2.25A RDSIon) Static


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PDF T-39-07 2N6781 2N6782 2N6781 N6782 2N6782 Tc-25f lei-7
2001 - 2N6782

Abstract: 2N67 TB334
Text: 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features · 3.5A, 100V The 2N6782 is an N-Channel enhancement mode silicon gate power field effect transistor , Information · Majority Carrier Device PART NUMBER 2N6782 PACKAGE TO-205AF · SOA is Power , " BRAND 2N6782 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF SOURCE DRAIN (CASE) GATE ©2001 Fairchild Semiconductor Corporation 2N6782


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PDF O205AF 2N6782 2N6782 2N67 TB334
2001 - 2N6782

Abstract: TB334
Text: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET · rDS(ON) = 0.600 Ordering Information 1592.2 Features The 2N6782 is an N-Channel enhancement mode , circuits. File Number · Majority Carrier Device PART NUMBER 2N6782 PACKAGE TO-205AF · 3.5A , Components to PC Boards" BRAND 2N6782 NOTE: When ordering, use the entire part number. Symbol D , Semiconductor Corporation 2N6782 Rev. A 2N6782 Absolute Maximum Ratings TC = 25oC, Unless Otherwise


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PDF 2N6782 2N6782 O-205AF TB334
2N6782U

Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
Text: EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6782 , 2N6782U , 2N6784, 2N6784U, 2N6786, AND 2N6786U, JAN , 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U 3407 VGS = 0 V dc, ID = 1.0 mA dc, bias , 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U 3421 VGS = 10 V dc, condition A, pulsed (see , ) 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U 4011 Pulsed (see 4.5.1), ID = ID1, VGS = 0 V dc , ohm ohm 5.0 V dc 15 15 15 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U Gate to


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PDF MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
2010 - CMF65-5.556K

Abstract: No abstract text available
Text: TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6782 , 2N6782U , 2N6784, 2N6784U, 2N6786, AND 2N6786U, JAN, JANTX , 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U 3407 VGS = 0 V dc, ID = 1.0 mA dc, bias , of rated VDS IDSS1 25 µA dc Static drain to source on-state resistance 2N6782 , 2N6782U , , pulsed (see 4.5.1), ID = ID2 rDS(on)3 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786, 2N6786U V dc , Subgroup 4 Switching time test Turn-on delay time td(on) 2N6782 , 2N6782U 2N6784, 2N6784U 2N6786


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PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K
2N6782

Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 Power MOS Field-Effect Transistors File Number 1592 N-Channel , – Majority carrier device The 2N6782 is an n-channel enhancement-mode silicon-gate power field-effect , power. These types can be operated directly from integrated circuits. The 2N6782 is supplied in the , DESIGNATION _ GITE 92CS-37555 JEDEC TO-205AF Absolute Maximum Ratings Parameter 2N6782 Units Vds Drain â , . (1.6mm) from case lor 10s) °C 3-504 Standard Power MOSFETs 2N6782 Electrical Characteristics @ Tq =


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PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500
1999 - 2N6782

Abstract: TB334
Text: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET · 3.5A , Transfer Characteristics · High Input Impedance · Majority Carrier Device Ordering Information 2N6782 PACKAGE TO-205AF 1592.2 Features The 2N6782 is an N-Channel enhancement mode silicon gate power , Components to PC Boards" BRAND 2N6782 NOTE: When ordering, use the entire part number. Symbol D , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 2N6782 Absolute Maximum Ratings TC


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PDF 2N6782 O-205AF 2N6782 TB334
2N6782

Abstract: 2N6781
Text: INHÂNOI^iNT-MODi D-MOS POWER FITS ORDERING INFORMATION T0-205 AF (TO-39) Hermetic Package ; 2N6782 2N6781 , Voltage 2N6782 . 100V* 2N6781 . 60V* Drain-Gate Voltage (Rgs = 1 Mfi) 2N6782 . 100V* 2N6781 , -29-25 'yWSW^S 2N6781, 2N6782 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted) # CHARACTERISTIC 2N6782 2N6781 UNIT TEST CONDITIONS MIN TYP MAX MIN TYP MAX 1 BVdss Drain-Source


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PDF 2NS731, T0-205 2N6782 2N6781 2N6782 2N6781
2N6782

Abstract: c0366 diode sv 0367
Text: Transistors K'r- raPower -SÎ-0 7 MOSFETs 2N6782 N-Channel Enhancement-Mode Power Field-Effect , – Majority carrier device The 2N6782 is an n-channel enhancement-mode silicon-gate power field-effect , power. These types can be operated directly from integrated circuits. The 2N6782 is supplied in the , 92cs-37s9s JEDEC TO-205AF Absolute Maximum Ratings Par »mat •< 2N6782 Unita Vf>s Drain • Sourta , MOSFETs _5_ 2N6782 Electrical Characteristic« @ Tp = 25'C (Unless Otherwise Specified) Parameter Mm


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PDF 2N6782 2N6782 1A41E c0366 diode sv 0367
DD 127 D TRANSISTOR

Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Text: , N-CHANNEL, SILICON TYPES 2N6782 , 2N6782U , 2N6784, 2N6784U, 2N6786, AND 2N6786U JAN, JANTX, JANTXV, JANS , MIL-PRF-19500/556F 2N6782 , 2N6782U , 2N6786, 2N6784U, 2N6786, 2N6786U FIGURE 7. Normalized transient thermal impedance. 18 MIL-PRF-19500/556F 2N6782 , 2N6782U FIGURE 8. Maximum safe operating , 2N6782 2N6784 2N6786 2N6782U 2N6784U 2N6786U Commercial types IRFF110 , SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON; TYPES 2N6782 , 2N6782U , 2N6784;2N6784U, 2N6786


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PDF MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
2001 - Not Available

Abstract: No abstract text available
Text: devices beginning " 2N6782 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT 2N6782 2N6782-JQR-B 2N6782LCC4 2N6782LCC4-JQR-B 2N6782SMD 2N6782SMD-JQR-B Polarity , 2N6782 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N­CHANNEL POWER MOSFET ENHANCEMENT MODE 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3093 Issue 1 2N6782 ELECTRICAL


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PDF 2N6782 O-205AF) 2N6782" 2N6782 2N6782-JQR-B 2N6782LCC4 2N6782LCC4-JQR-B 2N6782SMD 2N6782SMD-JQR-B O276AB)
2N6781

Abstract: No abstract text available
Text: otor controls, and wide-band and audio am plifiers. PRODUCT SUMMARY Part Number 2N6781 2N6782 V ds , perature Range Lead Temperature 14 2N6781 60* 60* 3.5* 14 2N6782 100* 100* 3.5* 14 ±20* 15* (See Fig. 14 , for 10s)* Units V V A A V W W /K A °C °C 2N6782 ELECTRICAL CHARACTERISTICS @ Tc = 25°C (Unless , 2N6781 2N6782 SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS Is Continuous Source Current (Body , ) 2N6781 2N6782 Fig. 10 - Typical Capacitane« Vs. Drain-to-Source Voltage 2 V o s . DR A IN


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PDF 2N6781 2N6782 2N6781
2002 - MOSFET 2N6782

Abstract: No abstract text available
Text: devices beginning " 2N6782-JQR " Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT 2N6782-JQR-B Polarity N-Channel Package TO39 VDSS (V) 100V ID(cont) (A) 3.5A PD (W) 15W , 2N6782 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N­CHANNEL POWER MOSFET ENHANCEMENT MODE 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3093 Issue 1 2N6782 ELECTRICAL


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PDF 2N6782 O-205AF) 2N6782-JQR" 2N6782-JQR-B MOSFET 2N6782
N mosfet 100v 500A

Abstract: No abstract text available
Text: 2N6781 2N6782 ABSOLUTE MAXIMUM RATINGS Parameter Vos Vd g r Id T - 3 Ï -07 2N6781 60* 60* 3.5* 14 2N6782 100* 100*. 3.5* 14 ±20* 15* (See Fig. 14) 0.12* (See Fig. 14) (See Fig. 15 and 16) L * 100//H i4 , ) Parameter BVoss Vos(th) Ig s s Type 2N6781 2N6782 ALL ALL ALL Min. 60* 100* 2.0* - Drain · Source , | ^ 3 4 7 T t 3" ODIOSE? 9347963 U N I T R O D E CORP 92D 10527 D 2N6781 2N6782 T , DE"| 1347=^3 DDlDSEfl T 9347963 UN I T R O D É CORP 92D 10528 2N6781 2N6782 Flg


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PDF 2N6782 N mosfet 100v 500A
Not Available

Abstract: No abstract text available
Text: ■4302571 005374b 041 ■HAS 2N6782 HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistor August 1 9 9 1 Features Package T 0 -2 0 5 A F • 3.5A , N-CHANNEL POWER MOSFETs The 2N6782 is an n-channel enhancement-mode silicon-gate power field-effect , gate-drive power. This type can be operated directly from integrated circuits. D The 2N6782 is , Lh¿E5DD I 4302 27 1 0D S3 7S 0 572 HAS 2N6782 WHEN MEASURING RISE TIME. VGS(cm>SH ALL BE AS


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PDF 005374b 2N6782 2N6782 LHDQ63
2N6782

Abstract: No abstract text available
Text: 2} HARRIS August 1991 2N6782 N -Channel Enhancem ent-M ode Power Field-Effect Transistor Package T0-205AF BOTTOM VIEW Features · 3.5A, 100V · rDS(on) = ° -6 n · SOA is Power-Dissipation , Carrier Device SOURCE GATE DRAIN (CASE) Description The 2N6782 is an n-channel , . The 2N6782 is supplied in the JEDEC T 0-205AF (Low Profile TO-39) metal package. Term inal Diagram , ), Unless Otherwise Specified 2N6782 Drain-Source Voltage (Note 1


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PDF 2N6782 T0-205AF 2N6782 LH0063
2000 - 2N6782

Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 7.75 (0.305) 8.51 (0.335) dia. · FAST SWITCHING · MOTOR CONTROLS 5.08 (0.200) typ. · POWER SUPPLIES 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 , 300°C 6/00 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter


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PDF 2N6782 00A/ms 300ms, 2N6782
jfet selector guide

Abstract: T0-220SM
Text: 2N6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6781 2N6781-SM 2N6781LCC4 2N6782 2N6782-SM 2N6782LCC4 2N6783 2N6783-SM 2N6783LCC4 2N6784 2N6784SM 2N6785 2N6786 2N6787 2N6787-SM 2N6787LCC4 2N6788


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PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM
MOSFET

Abstract: 2N6782
Text: tSzimL-dondiLctoi iPioaucti, Una. 20 STERN-AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6782 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET ENHANCEMENT MODE ?— * 3 1 4.06(0-16) 4.57(0. T_ 0.39 12 70 (0.500) min [0.035) APPLICATIONS °-. 4 _lL°j°!S}/r' ~S:53~(0.02i , -55to+150°C 300°C 2N6782 ELECTRICAL CHARACTERISTICS (Tcase - 25°C unless otherwise stated) Min


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PDF 2N6782 O-205AF) 300ns, 00A/u MOSFET 2N6782
2000 - Not Available

Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS 5.08 (0.200) typ. • POWER SUPPLIES 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045 , ±8V -55 to +150°C 300°C 6/00 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise


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PDF 2N6782 00A/ms 300ms,
Not Available

Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS 5.08 (0.200) typ. • POWER SUPPLIES 2.54 (0.100) 2 1 3 0.74 (0.029 , 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test


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PDF 2N6782 O-205AF)
2001 - 2N6782

Abstract: No abstract text available
Text: 2N6782 MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. · FAST SWITCHING · MOTOR CONTROLS 5.08 (0.200) typ. · POWER SUPPLIES 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3093 Issue 1 2N6782 ELECTRICAL


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PDF 2N6782 O-205AF) 2N6782
Not Available

Abstract: No abstract text available
Text: 2N6782+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test


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PDF 2N6782
Not Available

Abstract: No abstract text available
Text: 2N6782+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)3.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test


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PDF 2N6782
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