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Infineon Technologies AG
2N6758 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-204AA - Bulk (Alt: 2N6758)
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Avnet 2N6758 Bulk 0 12 Weeks 50 - - $10.29 $8.39 $8.39 Buy Now
Infineon Technologies AG
2N6758JANTX Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 - Bulk (Alt: JANTX2N6758)
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Avnet 2N6758JANTX Bulk 0 18 Weeks 50 - - $19.59 $19.39 $19.39 Buy Now
Infineon Technologies AG
JANTXV2N6758 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 - Bulk (Alt: JANTXV2N6758)
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Avnet JANTXV2N6758 Bulk 0 16 Weeks 50 - - $27.69 $25.39 $25.39 Buy Now
Infineon Technologies AG
2N6758JANTX. TRANS MOSFET N-CH 200V 9A 2PIN TO-3 ;ROHS COMPLIANT: NO
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Newark element14 2N6758JANTX. Bulk 0 1 $19.69 $19.69 $19.59 $19.49 $19.49 Buy Now
Harris Semiconductor
2N6758
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Bristol Electronics 2N6758 294 1 $7.84 $5.096 $3.3971 $3.2144 $3.2144 Buy Now
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International Rectifier
2N6758 INSTOCK
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Chip One Exchange 2N6758 69,119 - - - - - Get Quote
International Rectifier
Q2N6758 INSTOCK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Chip One Exchange Q2N6758 24,666 - - - - - Get Quote

2N6758 datasheet (27)

Part Manufacturer Description Type PDF
2N6758 International Rectifier TRANS MOSFET N-CH 200V 9A 2TO-204AA Original PDF
2N6758 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-3 Original PDF
2N6758 Microsemi N Channel MOSFET; Package: TO-204AA; Original PDF
2N6758 Fairchild Semiconductor N-Channel Power MOSFETs, 9A, 150V/200V Scan PDF
2N6758 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
2N6758 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
2N6758 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
2N6758 IXYS High Voltage Power MOSFETs Scan PDF
2N6758 Motorola Switchmode Datasheet Scan PDF
2N6758 Motorola European Master Selection Guide 1986 Scan PDF
2N6758 Motorola Power Transistor Selection Guide Scan PDF
2N6758 Others Shortform Datasheet & Cross References Data Scan PDF
2N6758 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6758 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6758 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6758 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6758 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6758 Others FET Data Book Scan PDF
2N6758 National Semiconductor N-Channel Power MOSFETs Scan PDF
2N6758 Semelab MOS Transistors Scan PDF

2N6758 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6758

Abstract: UPS RELAY CIRCUIT 2N6757 DDE7715
Text: " 2N6757/ 2N6758 F/\[RCHit-D N-Channel Power MOSFETs, A Schlumberger Company 9 A, 150 V/200 V ' T , Characteristic Rating 2N6758 Rating 2N6757 Unit Vdss Drain to Source Voltage 200 150 V Vdgr Drain to Gate , 3469674 FAIRCHILD SEMICONDUCTOR 84D 27796 D 2N6757/ 2N6758 T-39-11 Electrical Characteristics (Tc = 25 , (BR)DSS Drain Source Breakdown Voltage 2N6758 2N6757 V VGS = 0 V, lD = 1 mA 2002 1502 , On-Resistance 2N6758 2N6757 2N6758 2N6757 n VGS=10 V lD = 6 A lD = 5 A lD = 6 A, Tc=125°C lD = 5 A, Tc= 125Â


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PDF DDE7715 2N6757/2N6758 T-39-11 2N6758 2N675 UPS RELAY CIRCUIT 2N6757
2012 - DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
Text: 2N6756, 2N6758 , 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV Available on , 2N6756, 2N6758 , 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for , registered 2N6756, 2N6758 , 2N6760 and 2N6762 number series. JAN, JANTX, and JANTXV qualifications are , Voltage, dc 2N6756 2N6758 2N6760 2N6762 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6756 2N6758 2N6760 2N6762 (2) Drain Current, dc @ T C = +100 ºC 2N6756 2N6758 2N6760 2N6762 (3


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PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465
2N6758

Abstract: 2n677 2N67 2N6756 2N6757 30saa zn675
Text: Standard Power MOSFETs_ 2N6757, 2N6758 Power MOS Field-Effect Transistors File Number 1587 , DIAGRAM The 2N6757 and 2N6758 are n-channel enhancement-mode silicon-gate power field-effect transistors , MOSFETs 2N6757, 2N6758 Electrical Characteristic* @ Tc = 25°C (Unlese OtharwiM Specified) Parameter , VGS ~® N0= 1.0 mA 2N6758 200 - - V vGS(th> Gate Threshold Voltage ALL 2.0* 4.0* V VDS " VGS , On-6tata Voltage Q 2N67S.7 - - 4.8* V VGS=10V,lp = 8A 2N6758 - - 3.6* V VGS" 10v- 'D * 9A RDS(on


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PDF 2N6757, 2N6758 50V-200V 2N6757 2N6758 ZN6758 2n677 2N67 2N6756 30saa zn675
1SV50

Abstract: 2N6151 2N67 2N6757 2N6758
Text: Field-Effect Transistors _ 1 T-39-11 Standard Power MOSFËTs 2N6757, 2N6758 N-Channei Enhancement-Mode Power , characteristics ■High input impedance ■Majority carrier device The 2N6757 and 2N6758 are n-channel , =] fi r T-39-11 2N6757, 2N6758 Electrical Characteristic« I ! Tc = 25°C (Unlets Otherwise , 2N6757 150 - - V VGS "" 0 ■1 0 mA 2N6758 200 - - V vCS(lh) CatathrHhold Volt««! ALL 2.0* - 4.0 , Sou»e» On-StaU RtliltKK« 0 2N6757 - 0.4 0 6* n VGS« 10V. ID. 5A 2N6758 - 0 25 0 4* n V0S • 10V


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PDF T-39-11 2N6757, 2N6758 2N6757 2N6758 2N6751 50UACET0 T-39-11 1SV50 2N6151 2N67
2N6756

Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
Text: , N-CHANNEL, SILICON TYPES 2N6756, 2N6758 , 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC This , 75 75 75 75 4 4 4 4 100 200 400 500 100 200 400 500 2N6756 2N6758 2N6760 , TJ = 150qC A dc 2N6756 2N6758 2N6760 2N6762 A (pk) qC ohms ohms qC/W 14.0 , ID = ID2 VDS = 80 percent TJ = +25qC of rated VDS V dc 2N6756 2N6758 2N6760 2N6762 , and JANKCB (B-version) die dimensions for 2N6756, 2N6758 , 2N6760, and 2N6762. 5 MIL-PRF


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PDF MIL-PRF-19500/542F MIL-S-19500/542E 2N6756, 2N6758, 2N6760, 2N6762, 2N6756 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
2N6757

Abstract: No abstract text available
Text: JANTXV-, JANTX-, 2N6758 and 2N6757 Devices Absolute Maximum Rating* Parameter V DS V DGR l0 9 T c -2 5 , 2N6758 Min. 150 200 2 .0 * - Typ. 0.1 0.2 Max. 4 .0 * 100* 100* 1.0* 4.0* 4 .8 * 3 .6 * 0 .6 * 0 , ALL ALL 2N6757 2N6758 2N6757 2N6758 v DS(on) S tatic Drain-Source On-State Voltage Q R DS(on , * 0.4 0.25 5.0 600 250 80 2N6757 2N6758 -1 0 V ,Id - 5 A ,T c = 1 2 5 °C V GS 10V, l 0 = , Forward Voltage ^ 2N6757 2N6758 2N6757 2N6758 2N6757 2N6758 >rr °R R Reverse Recovery Tim e Reverse


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PDF 00GT3Gb T-39-11 MIL-S-19500/542 JANTXV2N6758 JANTX2N6758 SN6758 SIVI6757 G-285 Q00ci3Gcl 2N6757
2N6760 equivalent

Abstract: 2N6758 equivalent 2N6756 Transistor irf230 IRF230 IRF130 2N6762 2N6760 2N6758 104-2 substitution
Text: dimensions for 2N6756, 2N6758. 6 MIL-PRF-19500/542H 3.6 Electrostatic discharge protection. The , EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758 , 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND , 2N6758 2N6760 2N6762 IS IDM TJ and TSTG Type (4) VISO 100,000 feet altitude Max rDS(on) (1) VGS = 10 V dc, ID = ID2 RJC max TJ = +25°C TJ = +150°C A dc 2N6756 2N6758 , rated VDS V dc 2N6756 2N6758 2N6760 2N6762 100 200 400 500 V dc Min Max 2.0 4.0 2.0


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PDF MIL-PRF-19500/542H MIL-PRF-19500/542G 2N6756, 2N6758, 2N6760, 2N6762, MIL-PRF-19500. 2N6760 equivalent 2N6758 equivalent 2N6756 Transistor irf230 IRF230 IRF130 2N6762 2N6760 2N6758 104-2 substitution
2N6758

Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
Text: Standard Power MOSFETs_ 2N6757, 2N6758 Power MOS Field-Effect Transistors File Number 1587 , DIAGRAM The 2N6757 and 2N6758 are n-channel enhancement-mode silicon-gate power field-effect transistors , MOSFETs 2N6757, 2N6758 Electrical Characteristic* @ Tc = 25°C (Unlese OtharwiM Specified) Parameter , VGS ~® N0= 1.0 mA 2N6758 200 - - V vGS(th> Gate Threshold Voltage ALL 2.0* 4.0* V VDS " VGS , On-6tata Voltage Q 2N67S.7 - - 4.8* V VGS=10V,lp = 8A 2N6758 - - 3.6* V VGS" 10v- 'D * 9A RDS(on


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PDF 2N6757, 2N6758 50V-200V 2N6757 2N6758 2N6796 O-2I35AF O-205AF 2N6800 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6758 JANTX
2N675B

Abstract: 2N6757 2N6758
Text: +25°C ) Unless Otherwise Specified 2N6757 2N6758 U N IT S D rain-Source V o lta ge , 2N6757 2N6758 v GS(th) 'g s s f 'g s s r 'o s s Gata Threthold Voltaga Gata - Body Leakage Forward Gata - 8ody Leakage Ravarta Zaro Gala Voltaga Drain Currant ALL 2N6757 2N675B 2N6757 2N6758 R DS(on , Diode) Diode Forward Voltage ( ? ) 2N6757 2N6758 2N6757 2N6758 2N67S7 2N6758 trr °RR Reverse Recovery , Saturation Characteristics (2N6757) Fig. 6 - Typical Saturation Characteristics ( 2N6758 ) <0 OflAIN


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PDF 2N6757, 2N675B 2N6757 2N6758
sy 710 diode

Abstract: IC 6757 diode sy 710 2N6758 2N6757
Text: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel 2N6757 J' JTX' JTXV 2N6758 , SUMMARY Part Number 2N6757 2N6758 Vds RoS(on) ·d 150 V 200V o.6n o.4n 8A 9A FN-3 MECHANICAL SPECIFICATIONS 2N6757 JAN, JANTX, & JANTXV 2N6758 2 2 ]! «1175, MAX DIA 1)43 10450) < 0 >361 , ) 11/83 2-48 h U N IT R O D E 2N6757 JAN, JANTX, & JANTXV 2N6758 ABSOLUTE MAXIMUM RATINGS , n) 150* 8.0* 5.0* 12 ¿20* 75* (See Fig. 11) 30* (See Fig. 11) 2N6758 200* 200* 9.0* 6.0* IS


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PDF 2N6757 2N6758 IL-S-19500/542A 2N6757 sy 710 diode IC 6757 diode sy 710 2N6758
2N6758

Abstract: No abstract text available
Text: S ource-to-D rain D iode Characterized fo r Use W ith Inductive Loads · 2N6758 is Q u a lifie d to M , TMOS POWER MOSFET DATA 3-10 2N6758 , JTX, JTXV ELECTRICAL CHARACTERISTICS (Tc = 25C C unless otherw , / / / / / / / / ? 3 o o > Z ~ I 2N6758 , JTX, JTXV OPERATING AREA INFORMATION FIGURE 8 - MAXIMUM RATED SWITCHING SAFE OPERATING AREA FIGURE 9 - MAXIMUM RATED FORWARD BIAS SAFE OPERATING AREA, 2N6758


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PDF 2N6758 19500/542A
Not Available

Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS , to Source On State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6758 Note


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PDF MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112
2010 - 2N6758

Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain ­ Source Voltage VDS 200 , > +25°C (2) VGS = 10Vdc, ID = 6A TO-204AA (TO-3) 2N6758 ELECTRICAL CHARACTERISTICS (TA = +25°C


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PDF MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112 2N6758
2010 - 2N6758 equivalent

Abstract: 2N6758
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain ­ Source Voltage VDS 200 , State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6758 Note: (1) Derated


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PDF MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112 2N6758 equivalent 2N6758
irf3203

Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 IRF320 MTM5N20 MTM4N35 MTM3N35 MTM15N40
Text: IRF232 75 0.4 IRF230 9 2N6758 4 MTM8N20 8 0.35 6 MTM12N20 12 100 0.22 10 IRF242« 16


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PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 irf3203 MTM12N20 MTM15N35 DJ05AH mtm5n35 IRF320 MTM5N20 MTM4N35 MTM3N35 MTM15N40
2N6758

Abstract: 6757
Text: UNITRODE CORP t s o o i c mt , 9347963 UNITRODE CORP ~~~ 92D 1 04 96 D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 O h m N -C h a n n e l j ; j t x , j t x v 2N6758 T - ' b l - i i " FEATURES · Fast Switching · Low Drive Current » Ease of Paralleling · No Second Breakdown · Excellent Temperature Stability · Qualified to M 1L-S-19500/542A DESCRIPTION The , ) Pulsed Source Current (8 o d y Diode) Oiode Forw ard Voltage ^ 2N 6757 2N 6758 2 N 6757 2N6758 2N 6757 2N


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PDF 2N6758 1L-S-19500/542A 2N6758 6757
Not Available

Abstract: No abstract text available
Text: International ïO R lR e c t if ie r Government and Space HEXFET Power MOSFETs Hermetic Package N-Channel Part Number IRF034 IRF044 IRF054 IRF130 2N6756 JANTX2N6756 JANTXV2N6756 IRF140 IRF150 2N6764 JANTX2N6764 JANTXV2N6764 IRF230 2N6758 JANTX2N6758 JANTXV2N6758 IRF240 IRF250 2N6766 JANTX2N6766 JANTXV2N6766 IRF330 2N6760 JANTX2N6760 JANTXV2N6760 IRF340 IRF350 2N6768 JANTX2N6768 JANTXV2N6768 IRF360 IRF430 2N6762 JANTX2N6762 JANTXV2N6762 IRF440 IRF450 2N6770 JANTX2N6770 JANTXV2N6770 IRF460 IRFAC30 IRFAC40


OCR Scan
PDF IRF034 IRF044 IRF054 IRF130 2N6756 JANTX2N6756 JANTXV2N6756 IRF140 IRF150 2N6764
TO-254

Abstract: T0-204 IRF450 equivalent
Text: .X J P CT'Sificonix in c o r p o r a te d Industry Standard Military MOSFETs Part Number 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 2 N6962 2N6963 2N6964 2N6965 2N7071 2N7072 2N7073 2N7074 2N7075 2N7076 2N7077 2N7078 2N7079 2N7080 2N7081 2N7082 2N7085 2N7086 2N7089 2N7090 2N7091 2N7092 V(BRJDSS *0 ÏDS(ON) (A) 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500 100 200 400 500


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PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent
1999 - smd 662

Abstract: 2N7422 2n7425 2N7383 2N7426 2N7389 601 SMD 2N7422U 2N7219U 2n7424
Text: , IRHM7054 2N7394U, IRHN7054 2N6790, IRFF220 2N6790U, IRFE220 2N6847, IRFF9220 2N6847U, IRFE9220 2N6758


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PDF MO036 O-254 2N6782, IRFF110 2N6782U, IRFE110 smd 662 2N7422 2n7425 2N7383 2N7426 2N7389 601 SMD 2N7422U 2N7219U 2n7424
idm 73

Abstract: IRF244
Text: H EXFET Power MOSFETs Hermetic Package TO-3 N-Channel Vos Drafn Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250 2N6766 IRF225 IRF224 IRF235 IRF234 IRF245 IRF244 IRF255 IRF254 IRF323 IRF321 IRF333 IRF331 IRF343 IRF341 IRF353 IRF351 IRF322 IRF320 IRF332 IRF330 2N6760 IRF342 IRF340 IRF352 2N6768 IRF350 IRF362 IRF360 IRF423 IRF421 IRF433 IRF431 IRF443 1RF441 IRF453 IRF451 International S


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PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 idm 73 IRF244
IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF253 IRF221 IRF220 THOMSON 58E CASE OUTLINE THOMSON 58E irf362 IRF352
Text: IRF222 200 1.2 4.0 16 40 H17 IRF220 0.8 5.0 20 40 IRF232 0.60 7.3 20 73 2N6758 0.6 9.0 36 75


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PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF253 IRF221 IRF220 THOMSON 58E CASE OUTLINE THOMSON 58E irf362 IRF352
MTP20N10

Abstract: 1RF531
Text: NATL N-Channel Power MOSFETs (Continued) Type No. 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 S 1-6 IRF532 IRF533 MTP20N08 MTP20N10 2N6757 2N6758 IRF230 IRF231 C aso Style TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA (42) TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-204AA (42) TO-204AA (42) T0-204AA (42) T0-204AA (42) Pd (W) Tc = 25°C 75 75 75 75 75 75 75 75 75 75 100 100 75 75 75 75 V D SS (V) Min 60 100 100 60 100 60


OCR Scan
PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10
T0220H

Abstract: T072 T046 T018 2N6659 2N4416 2N4393 2N4391 2N3824LP 2N3824
Text: 0.25 12 75 2H6756 REQ N-CH T03 100 0.45 14 75 2N6757 REQ N-CH T03 150 0.6 8 75 2N6758 8EQ N-CH T03


OCR Scan
PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H T072 T046 T018
IRF630 HARRIS

Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
Text: HARRIS SEMICOND SECTOR tflE D M30E271 QOS1 1 1 4 HAS a · HARRIS S E M I C O N D U C T O R PCF230W N "C h 3 n n © l M O S C h ip January 1993 Features Passivated · Contact Metallization - Gate and Source - Aluminum · Drain - Tri-Metal (Al-Ti-Ni) · Die Visually Inspected to a 1.0% AQL Mil-Std-750, Method 2072 · Harris Packaged Products Manufactured From This Die: · IRF630 · BUZ30 - IRF230 · 2N6758 - IRFF230 - 2N6798 · PCF230W Die Shipped in Unsawn Probed Wafer Form ·


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PDF M30E271 PCF230W Mil-Std-750, IRF630 BUZ30 IRF230 2N6758 IRFF230 2N6798 PCF230W IRF630 HARRIS Transistor irf230 5A/IRF630 HARRIS
1RF9130

Abstract: jantx2n1800 JAN2N1793 IRFF9120 T0-209AC JAN2N3095 563 j 400v 2n6845 2N1915 2N6849
Text: 19500-1094-86 19500-1093-86 19500-1093-86 N-Channel Types 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768


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PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 IRFF9120 T0-209AC JAN2N3095 563 j 400v 2n6845 2N1915 2N6849
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