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2012 - DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
Text: 2N6756 , 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX , and JANTXV Available on , registered 2N6756 , 2N6758, 2N6760 and 2N6762 number series. JAN, JANTX , and JANTXV qualifications are , 2N6756 , 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for , Voltage, dc 2N6756 2N6758 2N6760 2N6762 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6756 2N6758 2N6760 2N6762 (2) Drain Current, dc @ T C = +100 ºC 2N6756 2N6758 2N6760 2N6762 (3


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PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465
2N6756

Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
Text: , N-CHANNEL, SILICON TYPES 2N6756 , 2N6758, 2N6760, 2N6762, JAN, JANTX , JANTXV, JANS, JANHC, and JANKC This , , N-CHANNEL, SILICON, TYPES 2N6756 , 2N6758, 2N6760, 2N6762 JAN, JANTX , JANTXV, JANS, JANHC, AND JANKC 4 , 75 75 75 75 4 4 4 4 100 200 400 500 100 200 400 500 2N6756 2N6758 2N6760 , TJ = 150qC A dc 2N6756 2N6758 2N6760 2N6762 A (pk) qC ohms ohms qC/W 14.0 , ID = ID2 VDS = 80 percent TJ = +25qC of rated VDS V dc 2N6756 2N6758 2N6760 2N6762


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PDF MIL-PRF-19500/542F MIL-S-19500/542E 2N6756, 2N6758, 2N6760, 2N6762, 2N6756 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
2N6760 equivalent

Abstract: 2N6758 equivalent 2N6756 Transistor irf230 IRF230 IRF130 2N6762 2N6760 2N6758 104-2 substitution
Text: EFFECT, N-CHANNEL, SILICON, TYPES 2N6756 , 2N6758, 2N6760, 2N6762, JAN, JANTX , JANTXV, JANS, JANHC, AND , dc A dc ± 20 ± 20 ± 20 ± 20 14.0 9.0 5.5 4.5 9.0 6.0 3.5 3.0 Type 2N6756 , (on) (1) VGS = 10 V dc, ID = ID2 RJC max TJ = +25°C TJ = +150°C A dc 2N6756 2N6758 , rated VDS V dc 2N6756 2N6758 2N6760 2N6762 100 200 400 500 V dc Min Max 2.0 4.0 2.0 , (A-version). 5 MIL-PRF-19500/542H Dimensions - 2N6756 Ltr Inches Dimensions - 2N6758


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PDF MIL-PRF-19500/542H MIL-PRF-19500/542G 2N6756, 2N6758, 2N6760, 2N6762, MIL-PRF-19500. 2N6760 equivalent 2N6758 equivalent 2N6756 Transistor irf230 IRF230 IRF130 2N6762 2N6760 2N6758 104-2 substitution
2N6755

Abstract: No abstract text available
Text: -279 HE 0 I 4055452 000^303 4 | JANTXV-, JANTX -, 2N6756 and 2N6755 Devices Absolute , -280 .IAWTXV-, JANTX -, 2N6756 and 2N6755 Devices E 0 I 20r 4055452 0001304 i i i b I ' , I F I E R JANTXV-, JANTX -, 2N6756 and 2N6755 Devices T-39-11 TJr JUNCTION TEMPERATURE (°C , ^ T-39-11 2N6756 100* 100* 14* 9 .0 * 30 ±20* 7 5* (See Fig. 11) 3 0 * (See Fig. 11) Units V V A A , Otherwise Specified) Parameter b v dss Typ« 2N6755 2N6756 Min. 60 100 2 ,0 * - Typ. 0.1 0.2 0.20


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PDF MIL-S-19500/542 JAIMTXV2N6756 SIM6756 G-281 Hfl5S45c? 2N6756 2N6755 T-39-11 G-282
2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Text: vDS{on)- \ Fig. 14 - Switching time waveforms. 3-491 - High-Reliability Power MOSFETs JAN, JANTX , and JANTXV JAN, JANTX , and JANTXV Solid-State Power Devices The major military specification used , are the least expensive. JANTX types receive 100 percent process conditioning, and power conditioning , in addition to all of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S , JANTX Power MOSFETs N-Channal Type« MIL-S-19500/ Package Channel Pt (W) Id (A) BVdss (V) fos (on) fi


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PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31
2N6770

Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
Text: High-Reliability Power MOSFETs JAN, JANTX , and JANTXV JAN, JANTX , and JANTXV Solid-State Power Devices The major , C lot sampling only, and are the least expensive. JANTX types receive 100 percent process , ) internal visual inspection in addition to all of the JANTX tests in accordance with MIL-STD-750 test , and JANTX Power MOSFETs N-Channal Type« MIL-S-19500/ Package Channel Pt (W) Id (A) BVdss (V) fos (on) fi 2N6756 542 T0-204AA N 75 14 100 0.18 2N6758 542 TO-2Q4AA N 75 9 200 0.4 2N6760 542 T0-204AA N


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PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX
2N6768

Abstract: 2N6768 JANTX 2N6767
Text: Fig. 14 - Switching time waveforms 3-499 - High-Reliability Power MOSFETs JAN, JANTX , and JANTXV JAN, JANTX , and JANTXV Solid-State Power Devices The major military specification used for the , the least expensive. JANTX types receive 100 percent process conditioning, and power conditioning , in addition to all of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S , JANTX Power MOSFETs N-Channal Type« MIL-S-19500/ Package Channel Pt (W) Id (A) BVdss (V) fos (on) fi


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PDF 2N6767, 2N6768 2N6767 2N6768 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6768 JANTX
2N7119

Abstract: 2N7122 2N6967 2N7121 2N7243 2N6966 2N7123 2N724 qpl-19500 JTX 2N7242
Text: and packing. JANTX and JANTXV Products Flow Chart PRODUCTION PROCESS 1. Raw Material 2. Factory , ) LOTS PROPOSED FOR JANTX OR JANTXV TYPES 100 PERCENT PROCESS CONDITIONING4 1. High Temp Storage , JANTX OR JANTXV REVIEW OF GROUP A, B AND C DATA FOR LOT ACCEPTANCE INSPECTION TESTS TO VERIFY LTPD , shown. 9-3 HARRIS SEMICOMA SECTOR SbE ]> JANTX and JANTXV Solid-State Power Devices The major , Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JANTX types receive 100 percent


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PDF 430EE71 QG42235 TC5-204AA 2N7120 T0-204AA 2N7121 2N7122 2N7123 2N7119 2N6967 2N7243 2N6966 2N724 qpl-19500 JTX 2N7242
2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Text: . Fig. 16 - Safe operating test circuit. 3-513 - High-Reliability Power MOSFETs JAN, JANTX , and JANTXV JAN, JANTX , and JANTXV Solid-State Power Devices The major military specification used for the , the least expensive. JANTX types receive 100 percent process conditioning, and power conditioning , in addition to all of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S , JANTX Power MOSFETs N-Channal Type« MIL-S-19500/ Package Channel Pt (W) Id (A) BVdss (V) fos (on) fi


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PDF 2N6784 2N6784 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
2001 - 2N6756

Abstract: TB334
Text: 2N6756 Data Sheet March 1999 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET File Number 1586.2 Features · 14A, 100V The 2N6756 is an N-Channel enhancement mode silicon gate power field , 0.180 Ordering Information · Majority Carrier Device PART NUMBER 2N6756 PACKAGE TO , Components to PC Boards" BRAND 2N6756 NOTE: When ordering, use the entire part number. Symbol D , Fairchild Semiconductor Corporation 2N6756 Rev. A 2N6756 Absolute Maximum Ratings TC = 25oC


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PDF 2N6756 2N6756 O-204AA TB334
406J

Abstract: JD 1801 IRFC130 irfc230 IRFC430 IRFC9230 IRFC9240 equivalent irfc250 2N6847 IRFC110
Text: A POW ERHO USE 27 Katrina Road Chelmsford, MA 01824 Tel: (978)256-3321 Fax: (978)250-1046 Web: www.stcsemi.com All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC for additional package configurations and special testing. Package TO-3 Part Number 2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 B V dss , Characters) -, JAN, JANTX , ojlANTXV A rO vV C K nO U SC - n n lilE B U n llc c 27 Katrina Road


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PDF 2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 IRFC130 IRFC230 IRFC330 IRFC430 406J JD 1801 IRFC9230 IRFC9240 equivalent irfc250 2N6847 IRFC110
2001 - 2N6756

Abstract: TB334
Text: 2N6756 Data Sheet December 2001 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6756 is an N-Channel enhancement mode silicon gate power field effect transistor designed for , types can be operated directly from integrated circuits. · rDS(ON) = 0.180 2N6756 PACKAGE TO , " BRAND 2N6756 NOTE: When ordering, use the entire part number. Symbol D G S Packaging , Corporation 2N6756 Rev. B 2N6756 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified


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PDF 2N6756 2N6756 O-204AA TB334
1N6828

Abstract: 1N6833 1N6828U3 smd code marking pk oh 1N682 smd code 1426
Text: , 1N6833R, 1N6828U3 and 1N6833U3 JAN, JANTX , JANTXV, JANS This specification is approved for use by all , -19500/671 4.3 Screening (JANS, JANTX , and JANTXV levels only). Screening shall be in accordance with , MIL-PRF-19500) 3a Measurement JANS level Temperature cycling JANTX and JANTXV levels Temperature , level Temperature cycling in accordance with JANTX level MIL-PRF-1900. Thermal impedance (see 4.5.2 , (JANS) and VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein


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PDF MIL-PRF-19500/671 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3 1N6833U3 MIL-PRF-19500. O-254AA 1N6828 1N6833 smd code marking pk oh 1N682 smd code 1426
JANTXV 1N6660

Abstract: 1N6660 1N6660R 1N6660CAT1 1N6660CCT1
Text: , 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX , JANTXV, AND JANS This specification is approved , Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF , MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c 3d 4 5, 8 9, 10 11 12 , in tables E-VIa (JANS) and E-VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500 and as follows , inspection, table E-VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500. Subgroup Method B3 1037


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PDF MIL-PRF-19500/608D 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, 1N6660DT1, MIL-PRF-19500. JANTXV 1N6660 1N6660 1N6660R 1N6660CAT1 1N6660CCT1
1N6785

Abstract: 1N678
Text: RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX , JANTXV AND JANS , . Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX , and JANTXV , -19500) Measurement JANS level (1) 3c JANTX and JANTXV levels Method 3101 (see 4.3.2), peak reverse energy , specified for subgroup testing in table E-VIa (JANS) and E-VIb ( JANTX and JANTXV) of MIL-PRF-19500, and as , -19500/656A 4.4.2.2 Group B inspection, table E-VIb ( JANTX and JANTXV) of MIL-PRF-19500. Subgroup 3


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PDF MIL-PRF-19500/656A MIL-PRF-19500/656 1N6785 1N6785R, MIL-PRF-19500. 1N678
567d

Abstract: 1N6492 1N6492U4
Text: BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX , JANTXV, AND JANS This specification is , , JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and , MIL-PRF-19500) 3 9 10 11 12 13 Measurement JANS level JANTX and JANTXV levels Test , conditions specified for subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX , and JANTXV) of MIL-PRF , 4081 See 4.5.3, RJC 12.0°C/W. 4.2.2 Group B inspection, table E-VIb (JAN, JANTX , and JANTXV of


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PDF MIL-PRF-19500/567D MIL-PRF-19500/567C 1N6492, 1N6492U4, MIL-PRF-19500. 567d 1N6492 1N6492U4
2N6804

Abstract: 2N6806 MIL-PRF19500 562C
Text: , P-CHANNEL, SILICON TYPES 2N6804 AND 2N6806 JAN, JANTX , JANTXV, JANS, JANHC, AND JANKC This specification , Screening (JANS, JANTX , and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF , MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 1/ Gate stress test (see , testing in table VIa (JANS) and table VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500 and herein , inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition 2 1051


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PDF MIL-PRF-19500/562C MIL-S-19500/562B 2N6804 2N6806 2N6806 MIL-PRF19500 562C
1N6391

Abstract: MIL-PRF19500 FED-STD-H28 chamfer vqe 14 display 1N6391 JANTX
Text: BARRIER, FAST RECOVERY, TYPE 1N6391, JAN, JANTX , JANTXV, JANS, AND JANHC This specification is approved , , JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and , and JANTX levels Condition C Surge, see 4.3.2 Thermal impedance, see 4.3.3 Not applicable , , JANTX , and JAN) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be VFM1 , inspection, table E-VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3


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PDF MIL-PRF-19500/553D MIL-PRF-19500/553C 1N6391, MIL-PRF-19500. 1N6391 MIL-PRF19500 FED-STD-H28 chamfer vqe 14 display 1N6391 JANTX
1N6392

Abstract: No abstract text available
Text: BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JANTX , JANTXV, AND JANHC This specification is approved for , accordance with MIL-PRF-19500. * 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in , acceptable. Screen (table E-IV of MIL-PRF-19500) 3a (1) 3b 3c 4 9 Measurement JANTXV and JANTX , testing in table E-VIb (JAN, JANTX , and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements , dc L = 260 µH T = IRF130/ 2N6756 or equivalent PROCEDURES: 1. With S open, adjust pulse width to


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PDF MIL-PRF-19500/554E MIL-PRF-19500/554D 1N6392, MIL-PRF-19500. 1N6392
2N6804

Abstract: 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D
Text: EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX , JANTXV, JANS, JANHC, AND , MIL-PRF-19500/562E 4.3 Screening (JANS, JANTX , and JANTXV levels only). Screening shall be in , acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level (3) JANTX , specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX , and JANTXV) of MIL-PRF , ; test condition A. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF


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PDF MIL-PRF-19500/562E MIL-PRF-19500/562D 2N6804 2N6806 MIL-PRF-19500. 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D
UFN540

Abstract: UFN451 UFNF130 UPT613 UFN833 UBT430 U2T105 UFN450 ufn432 TQ-66
Text: UFN152 UFN140 UFN142 2N6756 * UFN130 UFN132 UFN120 UFN122 UFN151 2N6763 UFN153 UFN141 UFN143 UFN131 2N6755 , * Available as JAN, JANTX , and JANTXV types. UN iT R O D E CO RPO RATIO N · 5 F O R B E S ROAD LEXIN G TO N , @ 5A 0-3f*S ·Available as JAN, JANTX , and JANTVX types Plastic NPN Power Darlingtons Maximum


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PDF U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN451 UFNF130 UPT613 UFN833 UBT430 U2T105 UFN450 ufn432 TQ-66
1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
Text: 800 500 150 25 T0-204AA 2N6756 IB N 100 ±20 14 75 ±100 ±20 1000 100 2.0 4.0 0. 18 10 9 4.0 9 , ±20 12 75 ±100 ±20 1000 60 2 4 0. 25 10 8 4.0 9.0 800 500 150 25 TO-204AA 2N6756 MOT » 100 ±20 14 , ±20 A2j 75 I ±100 ±20 1000 60 2.0 4.C 1 0. 1? 10 9. 0 12 10 4.0 9.0 800 500 150 25 T0-204AA 2N6756 SILI


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PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
2N6796 HARRIS

Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR kflE D M3Q2271 0051104 312 HAS ff» U M H A R R I S S EMI CONDUCTOR PCF130W PCF130D N-Channel MOS Chip Die January 1993 Features · Passivated · Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal (Al-Ti-Ni) · Die Visually Inspected to a 1.0% A Q L Mil-Std-750, Method 2072 · Harris Packaged Products Manufactured From This Die: - IRF530 - BUZ20 - IRF130 - 2N6756 - IRFF130 - 2N6796 · PCF130W Die Shipped in Unsawn Probed


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PDF M3Q2271 PCF130W PCF130D Mil-Std-750, IRF530 BUZ20 IRF130 2N6756 IRFF130 2N6796 2N6796 HARRIS
1N7001

Abstract: 1N7000 8SS89 4900 SIEMENS 2N6826 BUZ54 BUZ11 BUZ211 IXTP4N90 IXTP4N90A
Text: -205AD 2N6755 MOT N 60 ±20 12 75 ±100 ±20 1000 60 2 4 0. 25 10 8 4.0 9.0 800 500 150 25 TO-204AA 2N6756 , ±20 A2j 75 I ±100 ±20 1000 60 2.0 4.C 1 0. 1? 10 9. 0 12 10 4.0 9.0 800 500 150 25 T0-204AA 2N6756 SILI


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PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6826 BUZ54 BUZ11 BUZ211 IXTP4N90A
2001 - 2N3907

Abstract: 2c415 2N3409 BSV81 2N3209 BC107-109 2N6534 2N3036L 2N3680 2N5252
Text: , 5231 V410A, 765 2N5583LP Diode BAX65 MOSFET 2N6659-61 /S 2N6756 , 66 2N6781-6802 2N6845, 47


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PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 2N3209 BC107-109 2N6534 2N3036L 2N3680 2N5252
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