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2N6667 NTE Electronics Inc Newark element14 501 $2.28 $1.76
2N6667 ON Semiconductor Rochester Electronics 34 $0.31 $0.25
2N6667 Central Semiconductor Corp Avnet - - -
2N6667 Motorola Semiconductor Products Bristol Electronics 5 - -
2N6667 ON Semiconductor Bristol Electronics 31 $1.13 $0.73
2N6667 Motorola Semiconductor Products Bristol Electronics 74 - -
2N6667 Motorola Semiconductor Products ComS.I.T. 90 - -
2N6667 NTE Electronics Inc Master Electronics 30 $1.56 $1.04
2N6667G ON Semiconductor Rochester Electronics 315 $0.53 $0.43
2N6667G ON Semiconductor Newark element14 338 $0.85 $0.33
2N6667G ON Semiconductor Allied Electronics & Automation - $0.90 $0.77
2N6667G ON Semiconductor Future Electronics - $0.41 $0.32
2N6667G ON Semiconductor Avnet - $0.52 $0.42
2N6667G ON Semiconductor element14 Asia-Pacific 338 $1.05 $0.39
2N6667G ON Semiconductor Farnell element14 338 £0.60 £0.35
2N6667G ON Semiconductor Avnet 630 - -
2N6667G ON SEMICONDUCTOR New Advantage Corporation 300 $0.98 $0.89

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2N6667 datasheet (37)

Part Manufacturer Description Type PDF
2N6667 Central Semiconductor Leaded Power Transistor Darlington Original PDF
2N6667 On Semiconductor Darlington Silicon Power Transistors Original PDF
2N6667 On Semiconductor Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60-80 V, 65 W Original PDF
2N6667 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6667 Boca Semiconductor PLASTIC MEDIUM-POWER SILICON TRANSISTORS Scan PDF
2N6667 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
2N6667 Central Semiconductor Power Transistors Scan PDF
2N6667 General Electric 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. Scan PDF
2N6667 Mospec POWER TRANSISTORS(65W) Scan PDF
2N6667 Mospec Plastic Medium-Power Silicon Transistor Scan PDF
2N6667 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6667 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6667 Others Shortform Transistor PDF Datasheet Scan PDF
2N6667 Others Transistor Replacements Scan PDF
2N6667 Others Transistor Replacements Scan PDF
2N6667 Others Transistor Replacements Scan PDF
2N6667 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6667 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6667 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6667 Others Shortform Transistor Datasheet Guide Scan PDF

2N6667 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6668

Abstract: 2N6386 2N6666 2N6667 LDLB 2N6387 2N6388 power switching 10 amp 60V
Text: 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS ( Tc , )-2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667 , 2N6668 * DC Current , emitter PNP 2N6666 2N6667 2N6668 Characteristic Symbol 2N6666 2N6667 2N6668 Unit Collector-Emitter , - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6667 2N6668 Collector Cutoff


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PDF -2N6666 2N6667 2N6668 2N6666 2N6667, 2N6668 2N6386, 2N6387, 2N6388 2N6666 2N6386 2N6667 LDLB 2N6387 2N6388 power switching 10 amp 60V
2004 - Not Available

Abstract: No abstract text available
Text: 2N6667 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N6667 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Class » Darlington Transistors Type » PNP Buy 2N6667 at our online store! 2N6667 , : 2N6667 Information Did you Know. AMS has access to a network of more than 230,645,000 electronic components? Combine that Products Search for Parts Request a Quote Test Houses 2N6667 Specifications


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PDF 2N6667 2N6667 O-220AB STV3208
2N6666

Abstract: 2N6667 2N6668 2N6386 2N6387 2N6388
Text: 0.55 M 2.48 2.98 O 3.70 3.90 2N6666, 2N6667.2N6668 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25Â , 40V(Min)-2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 base o * Collector-Emitter Saturation Voltage VCE(sat) = 2 0 V (Max ) @ lc = 3 0 A - 2N6666 = 2.0 V (Max.) @ lc = 5.0 A - 2N6667 , 2N6668 * DC , emitter PNP 2N6666 2N6667 2N6668 Characteristic Symbol 2N6666 2N6667 2N6668 Unit Collector-Emitter , Sustaining Voltage (1) (lc = 200 mA, lB = 0 ) 2N6666 2N6667 2N6668 Collector Cutoff Current (VCE-40V, lB =


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PDF -2N6666 2N6667 2N6668 2N6666 2N6667, 2N6668 2N6386, 2N6387, 2N6388 2N6666 2N6667 2N6386 2N6387 2N6388
2005 - 2N6668G

Abstract: 1N5825 2N6387 2N6388 2N6667 2N6667G 2N6668 MSD6100
Text: Shipping 2N6667 TO-220AB 50 Units/Rail 2N6667G TO-220AB (Pb-Free) 50 Units/Rail , 2N6667 , 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and , (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc , June, 2005 - Rev. 5 1 Publication Order Number: 2N6667 /D 2 http://onsemi.com Î Î Î , %. Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 -


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PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D 2N6668G 1N5825 2N6387 2N6388 2N6667 2N6667G 2N6668 MSD6100
ta8203

Abstract: transistor RCA 274 2N6386-2N6388 N6666 2n6387 rca TA8487 2N6666 2N6667 tektronix p6019 8A103
Text: Transistors_—- 2N6666, 2N6667 , 2N6668 File Number 1069 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at3A(2N6666) Gain of 1000 at 5 A ( 2N6667 , 2N6668) Features: â , -J9989 The 2N6666, 2N6667 and 2N6668* are monolithic silicon p-n-p Darlington transistors designed for low , No. 610. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6666 2N6667 2N6668 • VCB0 , Transistors 2N6666, 2N6667 , 2N6668 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) =25°CUniess


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PDF 0D172bà 2N6666, 2N6667, 2N6668 10-Ampere 2N6666) 2N6668) O-220AB 92CS-J9989 ta8203 transistor RCA 274 2N6386-2N6388 N6666 2n6387 rca TA8487 2N6666 2N6667 tektronix p6019 8A103
2N6667

Abstract: 2n6609 2N6663
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667 /D 2N6609 (See2N3773 , Voltage - @ 200 mAdc V cEO (sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low Collector-Emitter , Temperature Range Symbol VCEO VCB V eb 'c 2N6667 60 60 5 10 15 250 65 0.52 > 0.016 2N6668 80 80 , °C /W °c /w REV 1 © Motorola, Inc. 1995 (M) M O TO RO LA 2N6667 2N6663 *ELECTRICAL , °C) Vdc, Tc = 125°C) 2N6667 2N6668 2N6667 2N6668 'CEX - - - - - 300 300 3 3 5 |iA dc m Adc 2N6667


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PDF 2N6667/D 2N6609 See2N3773) 2N6667 2N6668 -220A 2N6387, 2N6388 2N6667 2n6609 2N6663
2002 - 2N6667

Abstract: 2N6668
Text: amplifier and low speed switching applications. 2N6667 2N6668 PNP SILICON DARLINGTON POWER TRANSISTORS , Adc Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , (1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc , Number: 2N6667 /D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ , Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient 2N6667 2N6668 *ELECTRICAL


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PDF 2N6667 2N6668 2N6667 2N6668 O-220AB 2N6387, 2N6388 21A-09 O-220AB
2011 - Not Available

Abstract: No abstract text available
Text: 2N6667 2N6667G 2N6668 2N6668G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 , 2N6667 , 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low , Collector-Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc (Min) - 2N6668 Low , 1 Publication Order Number: 2N6667 /D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Emitter-Base Voltage Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc 5.0 10 15


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PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D
2N6667

Abstract: 2N600 2n6668
Text: ) - 2N6667 - 8 0 Vdc (Min) - 2N6668 · Low Collector-Emitter Saturation Voltage - VcE(sat) = 2 Vdc , B Compact Package · Complementary to 2N 6387,2N6388 2N6667 2N6668 PN P SILIC O N DARLINGTON PO W , Temperature Range Symbol VCEO VCB Veb lc 2N6667 60 60 5 10 15 250 65 0.52 2 0.016 2N6006 80 80 , 2N6667 2N6668 'ELE CT RIC A L C H A R A C T E R IST IC S (T c - 25°C unless otherwise noted , ) 1.5 Vdc, TC - 125°C) 1 .5 Vdc, TC - 125"C) 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 VC


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PDF 2N6667 2N6668 2N6388 2N600 2n6668
1995 - 2N3773 MOTOROLA

Abstract: 2N6667 2N3773 applications MSD6100 2N6668 1N5825 2N6609 2N6388 2N6387 2N3773
Text: 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB 60 80 Vdc , Vdc (Min) - 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668 · Low Collector­Emitter Saturation Voltage - , switching applications. 2N6667 2N6668 Darlington Silicon Power Transistors (See 2N3773) 2N6609 SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667 /D MOTOROLA 3­2 Figure 3. Power Derating , Cycle 2%. Collector­Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO


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PDF 2N6667/D* 2N6667/D 2N3773 MOTOROLA 2N6667 2N3773 applications MSD6100 2N6668 1N5825 2N6609 2N6388 2N6387 2N3773
2007 - 2N6668G

Abstract: 2N6388 2N6387 2N6667 2N6667G 2N6668 MSD6100 1N5825 darlington transistor with built-in temperature c
Text: Shipping 2N6667 TO-220AB 50 Units/Rail 2N6667G TO-220AB (Pb-Free) 50 Units/Rail , 2N6667 , 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and , 2N6667 = 80 Vdc (Min) - 2N6668 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max)@ IC = , November, 2007 - Rev. 6 1 Publication Order Number: 2N6667 /D 2 http://onsemi.com Î Î Î , %. Collector-Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 -


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PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D 2N6668G 2N6388 2N6387 2N6667 2N6667G 2N6668 MSD6100 1N5825 darlington transistor with built-in temperature c
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N6667 /D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773 , * C ollector-Em itter Sustaining Voltage — @ 200 mAdc V c E O is u s I = 60 Vdc (Min) — 2N6667 = , MAXIMUM RATINGS (1) Rating Symbol 2N6667 2N6668 Unit v CEO 60 80 Vdc C o , (1) Indicates JEDEC Registered Data. REV 1 © M otorola, Inc. 1995 ($ J M OTOROLA 2N6667 , Sustaining Voltage (1) (I q = 200 mAdc, Iß = 0) 2N6667 2N6668 v CEO(sus) Collector Cutoff Current


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PDF 2N6667/D 2N6609 2N3773) 2N6667 2N6668 -220A 2N6387, 2N6388 21A-06 O-220AB
2N6386-2N6388

Abstract: TA8203 TA8487 2n6667 TA8204 RCA 2n6388 2N6387 RCA
Text: File Num ber 1069 2N6666, 2N6667 , 2N6668 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 3 A (2N6666) Gain of 1000 at 5 A ( 2N6667 , 2N6668) Features , -3 M 6 S The 2N6666, 2N6667 and 2N6668* are m onolithic silicon p-n-p Darlington transistors , , Absolute-Maximum Values: 2N6666 -4 0 -4 0 2N6667 -6 0 -6 0 -6 0 -6 0 -5 -1 0 -1 5 -0 .2 5 65 - - 65 to +150 , accordance with JEDEC registration data format (JS-6 RDF-4). 2-182 2N6666, 2N6667 , 2N6668 ELECTRICAL


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PDF 2N6666, 2N6667, 2N6668 10-Ampere 2N6666) 2N6668) O-22QAB 2N6667 2N6386-2N6388 TA8203 TA8487 TA8204 RCA 2n6388 2N6387 RCA
2002 - 2N6668

Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductor ) 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector­Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector­Emitter Voltage 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , , LLC, 2002 April, 2002 ­ Rev. 4 1 Publication Order Number: 2N6667 /D 2N6667 2N6668 ÎÎÎ , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff


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PDF 2N6667 2N6668 220AB 2N6387, 2N6388 r14525 2N6667/D 2N6668 2N6667 1N5825 2N6387 2N6388 MSD6100
TA8203

Abstract: 2N6386-2N6388 ta8204 2n6387 rca
Text: File Number 1069 2N6666, 2N6667 ,2N6668 SbE ] > M3G2271 GCJMObGM 031 H A S HARRIS SENICOND , (2N6666) Gain of 1000 at 5 A ( 2N6667 , 2N6668) Features: Operates from 1C without predriver (F L A N G , Audio amplifiers Hammer drivers Series and shunt regulators JEDEC TO-22QAB The 2N6666, 2N6667 and , ) . V c e v (s u s ) 2N6666 -4 0 -4 0 -4 0 -4 0 - 5 -8 -1 5 -0 .25 66 2N6667 -6 0 -6 0 -« 0 -6 , registration data format US-6 RDF-4). 2-182 2N6666, 2N6667 ,2N6668 5bE D 43D2271 DD4Qb05 T7fl «


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PDF 2N6666 2N6667 2N6668 M3G2271 10-Ampere 2N6666) 2N6667, 2N6668) O-22QAB 2N6666, TA8203 2N6386-2N6388 ta8204 2n6387 rca
2011 - Not Available

Abstract: No abstract text available
Text: ORDERING INFORMATION Device Package Shipping 2N6667 TO−220AB 50 Units/Rail 2N6667G , 2N6667 , 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and , mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter , Order Number: 2N6667 /D 2 http://onsemi.com ÎÎÎ Î Î Î à , %. Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 â


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PDF 2N6667, 2N6668 2N6667 220AB 2N6387, 2N6388 2N6667/D
2001 - 20000 watt schematics power amp

Abstract: 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
Text: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for , Adc Collector­Emitter Sustaining Voltage - @ 200 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6667 = 80 Vdc , Collector­Emitter Voltage 2N6667 2N6668 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , , LLC, 2001 March, 2001 ­ Rev. 3 1 Publication Order Number: 2N6667 /D 2N6667 2N6668 ÎÎÎ , ) (IC = 200 mAdc, IB = 0) 2N6667 2N6668 VCEO(sus) 60 80 - - Vdc Collector Cutoff


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PDF 2N6667 2N6668 220AB 2N6387, 2N6388 220AB r14525 2N6667/D 20000 watt schematics power amp 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
TA8203

Abstract: 8A103 2N6386-2N6388
Text: - 2N6666, 2N6667 , 2N6668 File Number 1069 10-Ampere P-N-P Darlington Power Transistors , 5 65 . deratelinearly - - 65 to +150 2N6667 -6 0 -6 0 -6 0 -6 0 -5 -1 0 -1 , Transistors D T '3 ? '3 1 2N6666, 2N6667 , 2N6668 ELECTRICAL CHARACTERISTICS, AtCase Temperature (T q , . 2N6667 M IN . M AX. -1 - 0 ,3 - 2N6668 M IN. M A X. -1 UNITS - -1 - 0 .3 -3 _ -1 0 - - , _ - ¿N6666, 2N6667 , 2N6668 C O L L C C T O H -T O -E M IT T C R V 0 LT A 9E (V C C )- V t t C I


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PDF 0D172bâ 2N6666, 2N6667, 2N6668 10-Ampere O-22QAB 20944BI TA8203 8A103 2N6386-2N6388
2N6121

Abstract: 2N6101 2N6099 2N5496 2N5494 2N5492 2N5490 2N5298 2N5296 2N5294
Text: 30 150 3.0 3.5 7.0 4.0 2n6386 2n6666 8.0 65 40 40 1,000 20,000 3.0 2.0 3.0 20 2n6387 2n6667 10 65


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PDF O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2n6043 2n6040 2N6121 2N6101 2N6099 2N5496 2N5494 2N5492 2N5490 2N5298 2N5296 2N5294
2004 - 2N6134

Abstract: 2N6041 2N6133 2N6132 2N6126 2N6125 2N6124 2N6111 2N6109 2N6042
Text: 2.0 3.0 20 2N6387 2N6667 10 65 60 60 1,000 20,000 5.0 2.0 5.0


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PDF O-220 O-220 O-220FP 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6134 2N6041 2N6133 2N6132 2N6126 2N6125 2N6124 2N6111 2N6109 2N6042
Not Available

Abstract: No abstract text available
Text: 40 1,000 20,000 3.0 2.0 3.0 20 2N6387 2N6667 10 65 60 60 1,000


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PDF O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6387 2N6667
D40C7

Abstract: TO-204AA* 2n6650 D41K D45D1 2n6648 complementary darlington
Text: -10 -60 750 min. -4 -3 70 2N6667 -10 -60 1000 min. -5 -3 65 TIP125 -8 -60 1000 min. -3 -3 65


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PDF T0abfl73 2N6650 2N6358 2N6648 2N6649 O-204AA/ 2N6650 2N6668 2N6388 2N6666 D40C7 TO-204AA* 2n6650 D41K D45D1 2n6648 complementary darlington
Not Available

Abstract: No abstract text available
Text: Power Transistors TO-220 Case TYPE NO. «C (A) NPN 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 2N6099 2N6101 2N6103 2N6121 2N6122 2N6123 2N6129 2N6130 2N6131 2N6288 2N6290 2N6292 2N6386 2H6387 2N6388 2N6473 2N6474 2N6486 2N6487 2N6488 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 -2N6109 2N6107 2N6866 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 2N6040 »16041 2N6042 PNP MAX 4.0 4.0 4.0 7.0 7.0 7.0 7.0 36 36 36 50 50 50 50 PD (W) bvcbo BVCEO (V) MIN 70 40 60 40


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PDF O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044
2N6133

Abstract: 2N6134 2N5494 2N6126 2N6125 2N6131 2N6111 2N6109 2N6042 2N6040
Text: 2N6387 2N6667 10 65 60 60 1,000 20,000 5.0 2.0 5.0 20 2N6388


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PDF O-220 O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 O-220FP 2N6133 2N6134 2N5494 2N6126 2N6125 2N6131 2N6111 2N6109 2N6042 2N6040
2N6388

Abstract: 2N6387 2n6386 2N6666 2N6667 2N6668 2n6387.2n6388
Text: DARLINGTON SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Vceojsus) ~ 40 V (Min) - 2N6386 = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage VCE(sat) = 2.0 V (Max.) | = 2.0 V (Max.)! Ic = 3.0 A - 2N6386 I L = 5.0 A - 2N6387, 2N6388 £ < * DC Current Gain hFE = 2500(Typ) @ lc = 4.0 A * Complementary to 2N6666, 2N6667 , 2N6668 MAXIMUM RATINGS THERMAL


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PDF 2N6386 2N6387 2N6388 2N6386 2N6387, 2N6666, 2N6667, 2N6668 2N6388 2N6387 2N6666 2N6667 2N6668 2n6387.2n6388
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