The Datasheet Archive

2N6473 datasheet (24)

Part Manufacturer Description Type PDF
2N6473 Central Semiconductor Complementary Silicon Switching Transistor Original PDF
2N6473 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
2N6473 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6473 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan PDF
2N6473 Central Semiconductor Complementary Silicon Switching Transitors Scan PDF
2N6473 Central Semiconductor Power Transistors Scan PDF
2N6473 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N6473 General Electric Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. Scan PDF
2N6473 General Electric TRANSISTOR LEISTUNGS BIPOLAR Scan PDF
2N6473 Micro Electronics Semiconductor Device Data Book Scan PDF
2N6473 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6473 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6473 Others Shortform Transistor Datasheet Guide Scan PDF
2N6473 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6473 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6473 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6473 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6473 Others Shortform Transistor PDF Datasheet Scan PDF
2N6473 Others Transistor Replacements Scan PDF
2N6473 National Semiconductor Transistors Scan PDF

2N6473 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6474

Abstract: 2N6473
Text: SavantIC Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors , ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6473 VCBO Collector-base voltage 100 Open base 2N6474 VEBO Emitter-base voltage V 130 2N6473 Collector-emitter voltage UNIT , SavantIC Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6473 VCEO(SUS


Original
PDF 2N6473 2N6474 O-220 2N6473 2N6474
2n6474

Abstract: 2N6473 npn 100v 1.5a
Text: Inchange Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors , ratings(Ta=25) SYMBOL PARAMETER CONDITIONS 2N6473 VCBO Collector-base voltage 100 Open base 2N6474 VEBO Emitter-base voltage V 130 2N6473 Collector-emitter voltage UNIT , case Inchange Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6473


Original
PDF 2N6473 2N6474 O-220 2N6473 2n6474 npn 100v 1.5a
2n6a

Abstract: 2N6474 2N6476 2N6A73 2N6473 2N6475 2N647A
Text: centrai semiconductor €orp. Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦I 2N6A73 2N647A NPN 2N6475 2N6476 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC T0-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6473 Series types are complementary silicon , 130 vceo 100 120 Vebo 5.0 >C 4.0 IB 2.0 PD ao tj, Tstg -I 65 TO +150 0jc 3-125 2N6473 , =0.5A ( 2N6473 , 2N6*»710 4.0 4.0 MHz fT VCE=λ-0V, lc=0.5A (2N6A75, 2N6476) 5.0 5.0 MHz Cob Vcb=10V, f


OCR Scan
PDF 2N6A73 2N647A 2N6475 2N6476 T0-220 2N6473 100ii) 100fi 100mA 100mA, 2n6a 2N6474
2013 - 2N6474

Abstract: No abstract text available
Text: 2N6473 2N6474 2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473 , 2N6475 series , IC IB PD TJ, Tstg ΘJC 2N6473 2N6475 110 110 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6473 2N6475 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEO, VBE , VCE=2.5V, IC=4.0A 2.0 hfe VCE=4.0V, IC=0.5A, f=50kHz 20 fT VCE=4.0V, IC=0.5A ( 2N6473 , 2N6474


Original
PDF 2N6473 2N6474 2N6475 2N6476 2N6473, 2N6475 O-220 2N647C 50kHz 2N6474
rca 17417

Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
Text: _General-Purpose Power Transistors File Number'676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base , , and 2N6473-2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The , , 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (TC) = 25°C Unless Otherwise , ¥~ 17417 General-Purpose Power Transistore 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 ELECTRICAL , =1MHz) 2n6473-74 4 0.5 4 4 2n 6475-76 -4 -0.5 5 - 5 - hfe (f = 50 kHz) 4 0.5 20 - 20 - 't 2n6473-74 4


OCR Scan
PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* rca 17417 TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
TA7741

Abstract: 2N6106-2N6111 2N6476
Text: File Number 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 HARRIS SEMICOND SECTOR SbE , , voltage and current values are negative. 2-81 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 LIMITS , -33-01 pF °C/W 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 TEST CONDITIONS LIMITS VOLTAGE , 1.5a 4a V BE 4 2.5 1.5a 4a V c E(sat) lhfel (f = 1 MHz) 2N6473-74 2N6475-76 * hfe , - 5 _ 4 0.5 20 - 20 SECTOR (RßE = 100^ ) - fT 2N6473-74 4


OCR Scan
PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 43D2571 4DS03 O-220AB 2N64732N6476 TA7741 2N6106-2N6111 2N6476
2N8107

Abstract: rca 17417 TA8232 2N6109 equivalent 2N6476 2N6476 rca 2N6474 equivalent transistors 2N6473 DG17417 2N6111 RCA
Text: Transistors File Number'676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon N-P-N and , safe-area-ol-operation curves specified tor dc operation The RCA-2N6106-2N6111, 2N6288-2N6293, and 2N6473-2N6476 are , , 2N6473-2N6476 ELECTRICAL CHARACTERISTICS At Case Temperature (TC) = 25°C Unless Otherwise Specified TEST , ¥~ 17417-D T^B^I I General-Purpose Power Transistore 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 , 2.5 |hfe| (f = 1 MHz) 2N6473-74 4 0.5 4 4 2N 6475-76 -4 -0.5 5 - 5 - hfe (f = 50 kHz) 4


OCR Scan
PDF DD1741S 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 RCA-2N6106-2N6111, 2N6473-2N6476 2N6473, 2N6474* 2N8107 rca 17417 TA8232 2N6109 equivalent 2N6476 2N6476 rca 2N6474 equivalent transistors 2N6473 DG17417 2N6111 RCA
TA8210

Abstract: TA8232 TA8232 h TA8723 ta7741 2N6108 RCA TA7743 TA7742 ta7782 2N6475
Text: 2N6106-2N6111, 2N6288-2N6293, and 2N6473-2N6476 are epitaxial-base silicon transistors supplied in a VERSAWATT package. The 2N6288-2N6293, 2N6473 , and 2N6474* are n-p-n complements of p-n-p types 2N6106-2N6111, 2N6475 , - 1.2 2.5 - 1.2 2.5 • |hfe|(f= 1 MHz) 2n6473-74 4 0.5 4 4 2n6475-76 -4 -0.5 5 - 5 _ * hfe (f = 50 kHz) 4 0.5 20 - 20 - fT 2n6473-74 4 0.5 4 4 MHz 2n6475-76 -4 -0.5 5 _ 4 _ â , , Absolute-Maximum Values: N-P-N 2N6288 2N628» 2NS290 2N6291 2N62Í2 2N6293 2N6473 2N6474 P-N-P 2N611Q* 2N6108


OCR Scan
PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 2N6473, 2N6474* 2N6475, 2N6476" 100s2) TA8210 TA8232 TA8232 h TA8723 ta7741 2N6108 RCA TA7743 TA7742 ta7782 2N6475
st44t4

Abstract: Scans-0078411 FT47 to220 2N6771 transistor TO220 D44T4 power transistor npn to-220 2N6474 2N6473 2N5657
Text: NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS EPOXY CASES 7*- 3 3+0 ( STI Type Industry Power llsslpstlor @25°C (wans) VCEV VCEO ICEV hFE@'C VCe(SAT.) VBEI(SAT.)@Ic COB 'T CASE Type (volts) (volts) (volts) mA (Min.) A (volts) (votts) A PF (MHz) STYLE 2N5655 2 N5656 2N5657 2N6473 2N6474 2N5655 2N5656 2N5657 2N6473 2N6474 20 20 20 40 40 275 325 375 110 130 250 300 350 100 120 250 300 350 100 120 .10 .10 .10 .10 .10 30 30 30 15 15 .10 .10 .10 4.0 4.0 1.0 1.0 1.0 1.2 1.2 1.0 1.0


OCR Scan
PDF 2N5655 N5656 2N5657 2N6473 2N6474 2N5656 st44t4 Scans-0078411 FT47 to220 2N6771 transistor TO220 D44T4 power transistor npn to-220
2N5781

Abstract: 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6107 2N5954 2N6108
Text: size—values shown are edge dimensions in thousands-of-an-inch (mils). 2N6473 vCERl~.)=i>ov hFE=30-150 fT , min lc = 10 A max 508E 676 CT 676 678 678 CT 322 CT 353 485 2N6473 VCER(sus) = 110V hFE =


OCR Scan
PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N5781 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6107 2N5954 2N6108
2004 - 2N6134

Abstract: 2N6041 2N6133 2N6132 2N6126 2N6125 2N6124 2N6111 2N6109 2N6042
Text: 2N6473 2N6475 4.0 40 110 100 15 150 1.5 1.2 1.5 4.0 2N6474 2N6476


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PDF O-220 O-220 O-220FP 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6134 2N6041 2N6133 2N6132 2N6126 2N6125 2N6124 2N6111 2N6109 2N6042
Not Available

Abstract: No abstract text available
Text: 5.0 2.0 5.0 20 2N6473 2N6475 4.0 40 110 100 15 150 1.5 1.2


OCR Scan
PDF O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6387 2N6667
FT317

Abstract: BD223 FT317A FT417 BC323 FT317B Fairchild FT317 ft417b BD225 Fairchild FT417
Text: 1.0 6.0 TO-39 12 FT317 FT417 100 35/- 1.0 0.5 1.0 20 40 TO-220 13 2N6473 2N6475 100 15/150 1.5 1.2


OCR Scan
PDF 2N3054 2N5298 O-220 BD222 BD225 2N6122 2N6125 2N4232 FT317 BD223 FT317A FT417 BC323 FT317B Fairchild FT317 ft417b Fairchild FT417
Not Available

Abstract: No abstract text available
Text: Power Transistors TO-220 Case TYPE NO. «C (A) NPN 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 2N6099 2N6101 2N6103 2N6121 2N6122 2N6123 2N6129 2N6130 2N6131 2N6288 2N6290 2N6292 2N6386 2H6387 2N6388 2N6473 2N6474 2N6486 2N6487 2N6488 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 -2N6109 2N6107 2N6866 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 2N6040 »16041 2N6042 PNP MAX 4.0 4.0 4.0 7.0 7.0 7.0 7.0 36 36 36 50 50 50 50 PD (W) bvcbo BVCEO (V) MIN 70 40 60 40


OCR Scan
PDF O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044
300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 40360 2N5415 2N6292 2N6248 2N6107 2N5954 2N5781 BD243 40877
Text: size—values shown are edge dimensions in thousands-of-an-inch (mils). 2N6473 vCERl~.)=i>ov hFE=30-150 fT , min lc = 10 A max 508E 676 CT 676 678 678 CT 322 CT 353 485 2N6473 VCER(sus) = 110V hFE =


OCR Scan
PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 300W TRANSISTOR AUDIO AMPLIFIER 40360 2N5415 2N6292 2N6248 2N6107 2N5954 2N5781 BD243 40877
2N6133

Abstract: 2N6134 2N5494 2N6126 2N6125 2N6131 2N6111 2N6109 2N6042 2N6040
Text: 2N6668 10 65 80 80 1,000 20,000 5.0 2.0 5.0 20 2N6473 2N6475 4.0


Original
PDF O-220 O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 O-220FP 2N6133 2N6134 2N5494 2N6126 2N6125 2N6131 2N6111 2N6109 2N6042 2N6040
BD243

Abstract: 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6107 2N5954 2N5781
Text: size—values shown are edge dimensions in thousands-of-an-inch (mils). 2N6473 vCERl~.)=i>ov hFE=30-150 fT , min lc = 10 A max 508E 676 CT 676 678 678 CT 322 CT 353 485 2N6473 VCER(sus) = 110V hFE =


OCR Scan
PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 BD243 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6107 2N5954 2N5781
SCR 2N6399

Abstract: 2N6424 2N6406 2N6388 2N6387 2N6386 2N6385 2N6384 2N63 2N6407
Text: 2N6468 HI-REL PNP T066 130 4 15-150 4/1.5 5M 23 2N6469 SCREN PNP T03 50 15 20-150 4/5 10M 71 2N6473


OCR Scan
PDF 2N6384 lk-20k 2N6385 2N6386 T0220 2N6387 SCR 2N6399 2N6424 2N6406 2N6388 2N6387 2N6386 2N63 2N6407
2n6125

Abstract: No abstract text available
Text: 2.5 4 4 4 2N6133 2N6134 2N6111 2N6106 2N6109 2N6291 2N6292 2N6293 2N6473 2N6474 N


OCR Scan
PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125
TA8662

Abstract: 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6108 2N6107 2N5954
Text: size—values shown are edge dimensions in thousands-of-an-inch (mils). 2N6473 vCERl~.)=i>ov hFE=30-150 fTÂ


OCR Scan
PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 TA8662 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6108 2N6107 2N5954
FT317B

Abstract: FT317 Fairchild FT317 ft410 FT317A BD220 BD223 bc323 transistor TIP42 2N3054
Text: 1.0 6.0 TO-39 12 FT317 FT417 100 35/- 1.0 0.5 1.0 20 40 TO-220 13 2N6473 2N6475 100 15/150 1.5 1.2


OCR Scan
PDF 2N3054 2N5298 O-220 BD222 BD225 2N6122 2N6125 2N4232 FT317B FT317 Fairchild FT317 ft410 FT317A BD220 BD223 bc323 transistor TIP42 2N3054
2SB512P

Abstract: tip318 TIP31N TIP308 MH0870 2sb435 TIP298 2sc1060 MH8500 MH8106
Text: -220 40 7 70 30 150 2 4 1 2 4 2N6107 2N6293 N TO-220 40 7 70 30 150 2 4 1 2 4 2N6110 2N6473 N TO-220 40


OCR Scan
PDF MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 2sb435 TIP298 2sc1060 MH8500
2sc1061

Abstract: 2SC1626 2N6108
Text: Power Transistors TYPE POLA CASE NO. RITY D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 TIP29 TIP29A T1P29B TIP30 TIP30A TIP30B TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B T1P32C 2N6121 2N6122 2N6123 2N6124 2N6125 2N6126 2N6129 2N6130 2N6131 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 2N6473 2N6474 2SA473 2SA490 2SA670 2SA671 2SA816 2SB434 2SB435 2SB512 2SB512A P P P P P N N N N N N N N P P P N N N N P P P P N N N P P P N N N N N N N N N N N P P P P P P P P P TO-220 TO-220 TO


OCR Scan
PDF D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108
2n6a

Abstract: 2N6292 2N6180 2N6175 2N6488 2N6478 2N6178 2N6177 2N6107 2N5298
Text: 508E 676 CT 676 678 678 CT 322 CT 353 485 2N6473 VCER(sus) = 110V hFE = 15-150 » 1.5A fT= 5 MHz


OCR Scan
PDF O-220) O-2201 Pr-75Wmax. O-220I Pr-36Wmax. Pr-50Wmax. 2n6a 2N6292 2N6180 2N6175 2N6488 2N6478 2N6178 2N6177 2N6107 2N5298
2004 - MJE1300

Abstract: No abstract text available
Text: 2N6386 2N6387 2N6388 2N6473 2N6474 2N6486 2N6487 2N6488 PNP Shaded areas indicate Darlington. w


Original
PDF O-220 O-220 O-220FP 2N6040 2N6041 2N6042 2N6124 2N6125 2N6126 2N6132 MJE1300
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