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2N6394TG Littelfuse Inc Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, CASE 221A-07, 3 PIN
2N6394G Littelfuse Inc Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, LEAD FREE, CASE 221A-07, 3 PIN
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2N6394 ON Semiconductor Rochester Electronics 500 $0.91 $0.74
2N6394 Solid State Devices Inc (SSDI) Bristol Electronics 22 $1.13 $0.73
2N6394 RCA Bristol Electronics 29 $1.13 $0.73
2N6394 Motorola Semiconductor Products Bristol Electronics 247 $1.13 $0.36
2N6394 ON Semiconductor ComS.I.T. 252 - -
2N6394G Littelfuse Inc Newark element14 167 $1.96 $0.90
2N6394G ON Semiconductor Rochester Electronics 5,250 $1.01 $0.82
2N6394G ON Semiconductor Farnell element14 167 £1.04 £0.47
2N6394TG ON Semiconductor Rochester Electronics 1,650 $1.01 $0.82

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2N6394 datasheet (27)

Part Manufacturer Description Type PDF
2N6394 Motorola Silicon Controlled Rectifiers - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
2N6394 Motorola SCRs 12 AMPERES RMS 50 thru 800 VOLTS - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
2N6394 On Semiconductor Silicon Controlled Rectifier Original PDF
2N6394 On Semiconductor Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS Original PDF
2N6394 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
2N6394 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
2N6394 General Electric 12A silicon controlled rectifier. Vrsom 75V. - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
2N6394 Loras Industries SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 Scan PDF
2N6394 Motorola The European Selection Data Book 1976 Scan PDF
2N6394 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N6394 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N6394 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N6394 Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
2N6394 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6394 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N6394 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6394 RCA Solid State Thyristors / Rectifiers Product Guide 1975 Scan PDF
2N6394 Semelab Transistor Selection Guide Scan PDF
2N6394 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
2N6394 Semico Reliable Power Semiconductor Thyristors - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF

2N6394 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2n6397 scr

Abstract: 2n6394 SCR 2N6397
Text: 2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for , to 800 Volts · Device Marking: Logo, Device Type, e.g., 2N6394 , Date Code *MAXIMUM RATINGS (TJ = 25 , 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90 , ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device 2N6394 2N6395 2N6397 2N6399 Package , 1 February, 2000 ­ Rev. 2 Publication Order Number: 2N6394 /D 2N6394 Series THERMAL


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PDF 2N6394 2N6394, 2N6395 2N6397 2N6399 2N6397T O-220 21A-09 2n6397 scr SCR 2N6397
2001 - 2n6397 scr

Abstract: SCR 2N6399 2N6394 2n6397 2N6395 SCR 2N6394 639X
Text: 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , Dissipation and Durability · Blocking Voltage to 800 Volts · Device Marking: Logo, Device Type, e.g., 2N6394 , Voltage (Note 1.) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 , ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device 2N6394 2N6395 2N6397 2N6399 Package , 49 April, 2001 - Rev. 3 Publication Order Number: 2N6394 /D 2N6394 Series THERMAL


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PDF 2N6394 2N6394, 2N6395 2N6397 2N6399 2n6397 scr SCR 2N6399 SCR 2N6394 639X
1999 - 2n6398

Abstract: 2N6399 2N6394 2N6395 2N6397 2N6397 MOTOROLA
Text: MOTOROLA Order this document by 2N6394 /D SEMICONDUCTOR TECHNICAL DATA 2N6394 thru , .) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = ­40 to 125°C) 2N6394 , Thyristor Device Data © Motorola, Inc. 1999 1 2N6394 thru 2N6399 ELECTRICAL CHARACTERISTICS (TC = , ON-STATE CURRENT (AMPS) 8.0 Motorola Thyristor Device Data 2N6394 thru 2N6399 FIGURE 3 - , (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 3 2N6394 thru 2N6399


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PDF 2N6394/D 2N6394 2N6399 21A-07 O-220AB) 2n6398 2N6399 2N6394 2N6395 2N6397 2N6397 MOTOROLA
2012 - 2N639

Abstract: 2N6395G SCR 2N6399 2N6397TG
Text: ORDERING INFORMATION Device 2N6394G 2N6394TG 2N6395G 2N6397G 2N6397TG 2N6399G 2N6399TG TO-220AB (Pb-Free , 2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for , Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 , September, 2012 - Rev. 9 1 Publication Order Number: 2N6394 /D 2N6394 Series ELECTRICAL , 2N6394 Series 100 70 50 30 20 iTM , INSTANTANEOUS ON-STATE CURRENT (AMPS) TJ = 25°C 125°C 10 7.0 5.0


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PDF 2N6394 2N6395 2N6397 2N6399 2N6394/D 2N639 2N6395G SCR 2N6399 2N6397TG
2008 - SCR 2N6399

Abstract: 2N6397G 2n6397 scr 2N6399G 2N6395G 2N6397 SCR 2N6397 2N6395 2N6394G 2N6397 TO_220AB
Text: Package Shipping* 2N6394 TO-220AB 500 Units / Bulk 2N6394G TO-220AB (Pb-Free) 500 , 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM OnState RMS Current (180 , . Preferred devices are recommended choices for future use and best overall value. 2N6394 Series , 2N6394 Series IGTM , PEAK GATE CURRENT (mA) 300 200 I GT, GATE TRIGGER CURRENT (NORMALIZED


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PDF 2N6394 2N6394 2N6395 SCR 2N6399 2N6397G 2n6397 scr 2N6399G 2N6395G 2N6397 SCR 2N6397 2N6395 2N6394G 2N6397 TO_220AB
2008 - 2N6399G

Abstract: 2n6397 scr SCR 2N6399 2N6397G 2N6394 2N6394G 2N6395 2N6397 2N6399 2N6399TG
Text: 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM OnState RMS , April, 2008 - Rev. 7 1 Publication Order Number: 2N6394 /D 2N6394 Series ELECTRICAL , 2 2N6394 Series 100 TJ = 25°C 70 125°C 50 30 10 7.0 5.0 3.0 2.0 100 I TSM , 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 2N6394 Series IGTM , PEAK GATE CURRENT (mA


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PDF 2N6394 2N6394/D 2N6399G 2n6397 scr SCR 2N6399 2N6397G 2N6394G 2N6395 2N6397 2N6399 2N6399TG
1999 - SCR 2N6399

Abstract: 2N6394 2n6397 scr 2n6397 2N6399 2N6395
Text: 2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for , to 800 Volts · Device Marking: Logo, Device Type, e.g., 2N6394 , Date Code *MAXIMUM RATINGS (TJ = 25 , 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90 , ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device 2N6394 2N6395 2N6397 2N6399 Package , 288 February, 2000 ­ Rev. 2 Publication Order Number: 2N6394 /D 2N6394 Series THERMAL


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PDF 2N6394 2N6394, 2N6395 2N6397 2N6399 SCR 2N6399 2n6397 scr
1999 - SCR 2N6399

Abstract: 2n6397 scr 2N6397 2N6394 2N6395 2N6399
Text: 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , Dissipation and Durability · Blocking Voltage to 800 Volts · Device Marking: Logo, Device Type, e.g., 2N6394 , Voltage(1) (TJ = ­40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 , Registered Data Device Package Shipping 2N6394 TO220AB 500/Box 2N6395 TO220AB 500 , : 2N6394 /D 2N6394 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC


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PDF 2N6394 2N6394, r14525 2N6394/D SCR 2N6399 2n6397 scr 2N6397 2N6395 2N6399
2001 - SCR 2N6399

Abstract: 2N6394 2N6399 2n6394 application note 2N6394-D 2N6395 2N6397 639X
Text: 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , Dissipation and Durability · Blocking Voltage to 800 Volts · Device Marking: Logo, Device Type, e.g., 2N6394 , ­40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM , ratings of the devices are exceeded. Device Package Shipping 2N6394 TO220AB 500/Box , Industries, LLC, 2001 April, 2001 ­ Rev. 3 1 Publication Order Number: 2N6394 /D 2N6394 Series


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PDF 2N6394 2N6394, 60ONlit r14525 2N6394/D SCR 2N6399 2N6399 2n6394 application note 2N6394-D 2N6395 2N6397 639X
2N6399

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6394 /D Silicon Controlled , 2N6394 thru 2N6399 Motorola preferred devices SCRs 12 AMPERES RMS 50 thru 800 VOLTS AO , Reverse Blocking VoltageO ) (Gate Open, T j = - 4 0 to 125°C) 2N6394 2N6395 2N6397 2N6398 2N6399 RMS O n , -© M otorola, Inc. 1999 (M ) MOTOROLA 2N6394 thru 2N6399 ELECTRICAL CHARACTERISTICS (T q , Data 2N6394 thru 2N6399 FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT 100 95 90 cc cc 85 80


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PDF 2N6394/D 2N6394 2N6399 21A-07 2N6399
1999 - 2N6399

Abstract: 2N6394 2N6395 2N6397 2N6398
Text: MOTOROLA Order this document by 2N6394 /D SEMICONDUCTOR TECHNICAL DATA 2N6394 thru , .) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = ­40 to 125°C) 2N6394 , Thyristor Device Data © Motorola, Inc. 1999 1 2N6394 thru 2N6399 ELECTRICAL CHARACTERISTICS (TC = , ON-STATE CURRENT (AMPS) 8.0 Motorola Thyristor Device Data 2N6394 thru 2N6399 FIGURE 3 - , (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 3 2N6394 thru 2N6399


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PDF 2N6394/D 2N6394 2N6399 21A-07 O-220AB) 2N6399 2N6394 2N6395 2N6397 2N6398
2011 - Not Available

Abstract: No abstract text available
Text: 2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for , to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM On-State RMS Current (180 , . Publication Order Number: 2N6394 /D 2N6394 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , On−State Power Dissipation Figure 1. Current Derating http://onsemi.com 2 2N6394 Series 100 TJ , 2.0 k 3.0 k 5.0 k 10 2N6394 Series IGTM , PEAK GATE CURRENT (mA) 300 200 I GT, GATE


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PDF 2N6394 2N6394/D
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6394 /D Silicon Controlled , eat D issipation and D urability B locking V oltage to 800 Volts 2N6394 thru 2N6399 Motorola , °C) 2N6394 2N6395 2N6397 2N6398 2N6399 RMS O n -S ta te Current (T q = 90°C) (All Conduction Angles) Peak , . 1999 2N6394 thru 2N6399 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted , CURRENT (AMPS) 2 Motorola Thyristor Device Data 2N6394 thru 2N6399 FIGURE 4 - MAXIMUM


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PDF 2N6394/D 2N6394 2N6399
2006 - 2N6397G

Abstract: SCR 2N6399 2N6399G 2N6395G 2N6394G 2N6395 2N6397 2N6399 2N6394 SCR 2N6397
Text: Package Shipping* 2N6394 TO-220AB 500 Units / Bulk 2N6394G TO-220AB (Pb-Free) 500 , 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM On-State RMS , , 2006 August, 2006 - Rev. 6 1 Publication Order Number: 2N6394 /D 2N6394 Series ELECTRICAL , Dissipation http://onsemi.com 2 2N6394 Series 100 TJ = 25°C 70 125°C 50 20 10 7.0


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PDF 2N6394 2N6394/D 2N6397G SCR 2N6399 2N6399G 2N6395G 2N6394G 2N6395 2N6397 2N6399 SCR 2N6397
2006 - SCR 2N6399

Abstract: 2n6397 data sheet scr 2N6397G 2N6399G 2N6397G data sheet 2N6395G 2N6395 2N6394G 2N6394 2N6397
Text: INFORMATION Package Shipping 2N6394 TO-220AB 500 Units / Box 2N6394G TO-220AB (Pb-Free , 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 , . © Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 5 1 Publication Order Number: 2N6394 /D 2N6394 Series THERMAL CHARACTERISTICS Characteristic Symbol Unit 2.0 °C/W TL


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PDF 2N6394 2N6400/D SCR 2N6399 2n6397 data sheet scr 2N6397G 2N6399G 2N6397G data sheet 2N6395G 2N6395 2N6394G 2N6397
2N6396

Abstract: 2n6399
Text: 2N6394 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . de sig ned p rim , and Reverse Blocking Voltage (T j 40 to 125°C) 2N6394 2N6395 2N6396 2N6397 2N6398 2N6399 RMS On-State , O R O LA T H Y R IS T O R D E V IC E DATA 3-76 2N6394 thru 2N6399 «MAXIMUM RATINGS - continued , R IS T O R D E V IC E DATA 3-77 2N6394 thru 2N6399 F IG U R E 3 - O N -STA TE C H A R A C T E R , IC E DATA 3-78 2N6394 thru 2N6399 TY P IC A L CH AR AC TER ISTIC S F IG U R E 6 - PULSE T R


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PDF 2N6394 2N6399 2N6394 2N6395 2N6396 2N6397 2N6398 2N6399
2005 - 2N6397G

Abstract: SCR 2N6399 2N6397 2N6399G 2N6395 2n6397 scr 2N6399 2N6395G 2N6394G 2n6394 application note
Text: Package Shipping 2N6394 TO-220AB 500 Units / Box 2N6394G TO-220AB (Pb-Free) 500 , 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors , °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 VDRM, VRRM On-State RMS , Industries, LLC, 2005 March, 2005 - Rev. 4 1 Publication Order Number: 2N6394 /D 2N6394 Series , 2N6394 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak


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PDF 2N6394 2N6400/D 2N6397G SCR 2N6399 2N6397 2N6399G 2N6395 2n6397 scr 2N6399 2N6395G 2N6394G 2n6394 application note
2011 - 2N6399G

Abstract: 2N6397G
Text: 2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for , Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 , , 2011 - Rev. 8 1 Publication Order Number: 2N6394 /D 2N6394 Series ELECTRICAL CHARACTERISTICS , . Current Derating Figure 2. Maximum On-State Power Dissipation http://onsemi.com 2 2N6394 Series , 10 ZqJC(t) = RqJC · r(t) Figure 5. Thermal Response http://onsemi.com 3 2N6394 Series


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PDF 2N6394 2N6395 2N6397 2N6399 2N6394/D 2N6399G 2N6397G
2N6394

Abstract: No abstract text available
Text: 2N6394 * S ilic o n C o n tro lled Rectifiers Reverse B locking Triode Thyristors . . . d e s , (Gate Open, T j = -4 0 to 1 2 5 ° C ) 2N6394 2N6395 2N6396 2N6397 2 N6398 2N6399 RM S On-State Current , OTO ROLA THYRISTOR DEVICE DATA 3-47 2N6394 thru 2N6399 E L E C T R IC A L C H A R A C T E R IS T , 2N6394 thru 2N6399 F IG U R E 3 - O N -S T A T E C H A R A C T E R I S T I C S F I G U R E 4 - M A X I M , ' (NORMALIZED) M OTO ROLA THYRISTOR DEVICE DATA 3-49 2N6394 thru 2N6399 T Y P IC A L C H A R A C T E R


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PDF 2N6394* 2N6399* 2N6394 2N6399
1998 - intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 845 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD CIRCUIT diagram ecuv1h104zfx FDB6030L 1 N-Channel MOSFET ECU-V1H104ZFX 2N6394 diode FET fdb6030l
Text: Q3 2N6394 C2 1µF C5 1µF R2 4.7 Q1 R8 (Optional) VID4 VID3 VID2 VID1 VID0 L2 , 2. Q3 Motorola 2N6394 1 SCR R1, R6 Any 2 10 R2-3 Any 2 4.7 , ) 2.5µH +5V D2 1N4148 R1 10 CIN* R2 4.7 R6 10 Q3 2N6394 R5 2.80K C1 4.7µF , 2. Q3 Motorola 2N6394 1 SCR R1, R6 Any 2 10 R2-3 Any 2 4.7 , Q3 2N6394 C2 1µF C5 1µF R2 4.7 Q1 D1 MBRD835L 11 12 13 14 15 16 17 18 19


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PDF RC5052 RC5052 DS30005052 intel 845 MOTHERBOARD pcb CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD CIRCUIT diagram ecuv1h104zfx FDB6030L 1 N-Channel MOSFET ECU-V1H104ZFX 2N6394 diode FET fdb6030l
MCR220-7

Abstract: MCR220-5 2N6396 2N6395 MCR220 2N6398 2N6394 2N6397 2N6399
Text: 2N6394 thru MCR220=7 2N6399MCR220"9 MCR220=5 Value Unit volts 50 100 200. 300 400 500 600 700 \ \#:F*,5399 Forward Current ~~~f~s'l 800 25°C IT(RMS) 12 Amps ~Nk (All Conduct~:{*,@tit&s) ,. Peak Forwar%#&Current I TSM 100 PIN 1, 2. 3. 4. Amps CATHODE ANOOE GATE ANOOE 12t All JEDEC (T~ff-*0 to +.125°C, t = 1.0 to 8.3 ms) ,). , °C uniess otherwise lted.) Symbol Min Typ 2N6394 50 - 2N6395 100 - 2N6396


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PDF 2N6394 MCR220 2N6399MCR220 OS-6565-RI MCR220-7 MCR220-5 2N6396 2N6395 2N6398 2N6394 2N6397 2N6399
2N6396

Abstract: 2N6398 2N6394 2N6395 2N6394-2N6398
Text: Rectifiers_ 01E 17694 D 7= Z-S"-/*' 2N6394—2N6398 File Number 891 12-A Silicon Controlled Rectifiers , 17695 D T-'ZS^âr _silicon Controlled Rectifiers 2N6394—2N6398 ELECTRICAL CHARACTERISTICS At , SOLID STATE Silicon Controlled Rectifiers- 0 1E 17696 D 7 2N6394—2N6398 ON-STATE CURRENT [XT(RMS). , 17697 D r~2j£~ìS> _Silicon Controlled Rectifiers 2N6394—2N6398 > I 2-5 H i UJ 2 o < 5 > I.5 cc 111 , Rectifiers- 0 1E 17698 D 7^2 2N6394—2N6398 CRITICAL dv/dl Fig. 13 — Rate of rise of off-state voltage


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PDF 2N6394â 2N6398 399S8 O-220AB RCA-2N6394 2N6398, T0-220AB 92CS-I336SH2 KCSH3349H4 2N6396 2N6398 2N6394 2N6395 2N6394-2N6398
2002 - on 70n03

Abstract: 70N03 AN9668 HIP6003 HIP6005EVAL3 HIP6005 HIP6004EVAL3 HIP6004 HIP6002 t505
Text: IN 15A + Q3 2N6394 R4 +12V GND GND C10, C11 2x 1µF 2K CR1 C15 0.1µF 7 , Q1, Q2 Intersil 2N6394 12A, 50V SCR TO220 1 Q3 Motorola HIP6004 , 1µH F1 VCC5 JP5 IN 15A + Q3 2N6394 R4 +12V GND GND C10, C11 2x 1µF , MOSFET TO220 1 Q1 Intersil 2N6394 12A, 50V SCR TO220 1 Q3 Motorola


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PDF HIP6004 HIP6005 HIP6004EVAL3, HIP6005EVAL3) AN9706 HIP6004/5 HIP6004/5EVAL3 HIP6004 HIP6005 HIP6004EVAL3) on 70n03 70N03 AN9668 HIP6003 HIP6005EVAL3 HIP6004EVAL3 HIP6002 t505
2000 - 2n5060 thyristor

Abstract: Silicon Controlled Rectifiers C106X Triacs 2N6344A 2n5060 transistor 2N6027 SCR 2N5060 2N5060 2N6400
Text: THYRISTOR PART NUMBER PREFIX* DEVICE PREFIX 2N5060 Series 2N6027, 2N6028 2N6071A Series 2N6344, 49 2N6344A, 48A, 49A 2N6394 Series 2N6400 Series 2N6504 Series C106X & C122X MACXXXX MCRXXXX MKPXXXX MMTXXXX TXXXX DEVICE DESCRIPTION Silicon Controlled Rectifiers (SCR) Programmable Unijunction Transistor (PUT) Triacs Silicon Controlled Rectifiers (SCR) Silicon Controlled Rectifiers (SCR) Triacs Silicon Controlled Rectifiers (SCR) Sidacs: High Voltage Bidirectional Triggers Thyristor Surge Protective


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PDF 2N5060 2N6027, 2N6028 2N6071A 2N6344, 2N6344A, 2N6394 2N6400 2N6504 C106X 2n5060 thyristor Silicon Controlled Rectifiers C106X Triacs 2N6344A 2n5060 transistor 2N6027 SCR 2N5060
1998 - RC firing circuit FOR SCR

Abstract: crowbar circuit SCR firing converter circuit SCR gate drive circuit LM393 crowbar 4 pin SCR gate drive circuit mosfet firing circuit crowbar SCR Gate Drive SCR Crowbar
Text: Circuit R251005 5A VOUT + 2N6394 output capacitance is a typical 10mF, the time constant is , ½ 10K½ 2N6394 ­ 2N2907 10K½ LM393 R1 + 10K½ 1K½ RC431A R1 1M½ The


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PDF AB-17 RC5051 RC5051 AB00000017 RC firing circuit FOR SCR crowbar circuit SCR firing converter circuit SCR gate drive circuit LM393 crowbar 4 pin SCR gate drive circuit mosfet firing circuit crowbar SCR Gate Drive SCR Crowbar
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