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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N6387 Harris Semiconductor Rochester Electronics 2,368 $1.52 $1.24
2N6387 NTE Electronics Inc Newark element14 58 $2.05 $1.58
2N6387 Central Semiconductor Corp Avnet - $0.63 $0.56
2N6387 ON Semiconductor Rochester Electronics 1,679 $0.33 $0.27
2N6387 ON Semiconductor Bristol Electronics 45 $1.13 $0.73
2N6387G ON Semiconductor Farnell element14 366 £0.57 £0.30
2N6387G ON Semiconductor Allied Electronics & Automation - $0.84 $0.75
2N6387G ON Semiconductor Future Electronics 1,792 $0.52 $0.34
2N6387G ON Semiconductor Avnet - $0.90 $0.31
2N6387G ON Semiconductor Avnet 2,428 $0.92 $0.34
2N6387G ON Semiconductor Rochester Electronics 52 $0.49 $0.40
2N6387G ON Semiconductor Newark element14 1,328 $0.26 $0.26
2N6387G ON Semiconductor Chip1Stop 380 $0.52 $0.40
2N6387G ON Semiconductor Chip1Stop 100 $1.51 $0.43
2N6387G ON Semiconductor element14 Asia-Pacific 361 $1.14 $0.38
2N6387G ON SEMICONDUCTOR New Advantage Corporation 2,084 $1.04 $0.95
2N6387G. ON Semiconductor Newark element14 2,428 $0.92 $0.31

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2N6387 datasheet (50)

Part Manufacturer Description Type PDF
2N6387 Central Semiconductor Leaded Power Transistor Darlington Original PDF
2N6387 Motorola Plastic Medium Power Silicon Transistor Original PDF
2N6387 On Semiconductor Plastic Medium-Power Silicon Transistor Original PDF
2N6387 On Semiconductor Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 - 80 VOLTS Original PDF
2N6387 On Semiconductor Plastic Medium-Power Transistors Original PDF
2N6387 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6387 Boca Semiconductor DARLINGTON SILICON POWER TRANSISTORS Scan PDF
2N6387 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
2N6387 Central Semiconductor Power Transistors Scan PDF
2N6387 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
2N6387 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N6387 General Electric 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. Scan PDF
2N6387 Mospec POWER TRANSISTORS(65W) Scan PDF
2N6387 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6387 Motorola European Master Selection Guide 1986 Scan PDF
2N6387 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6387 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6387 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6387 Others Shortform Transistor PDF Datasheet Scan PDF
2N6387 Others Transistor Replacements Scan PDF

2N6387 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6386

Abstract: 2N6387 2N6388 2n6666 NPN 80V 3A
Text: SavantIC Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power , CONDITIONS 2N6386 VCBO Collector-base voltage 2N6387 VALUE 40 Open emitter 60 2N6388 Collector-emitter voltage 40 2N6387 Open base 2N6388 VEBO Emitter-base voltage IC V 80 , 2N6387 /6388 V 10 A ICM Collector current-Pulse 15 IB Base current-DC 0.25 , 2N6387 2N6388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified


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PDF 2N6386 2N6387 2N6388 O-220C 2N6666/6667/6668 2N6386 2N6387 2N6388 2n6666 NPN 80V 3A
2N6388

Abstract: 2N6387 2N63
Text: , Temperature Range Symbol V cEO VCB Ve b 'c IB Po 65 0.52 Pd 2.0 0.016 T Ji Tstg 2N6387 60 60 5.0 10 15 250 , 2N6387 2N6388 `ELECT RIC A L C H A R A C T E R IST IC S (Tc " 25°C unless otherwise noted , Current (Vb e - 5.0 Vdc, lc - 0) VCEO(sus) 2N6387 2N6388 'C E O 2N6387 2N6388 'C E X 1 5 Vdc) 1-5 Vdc) 1.5 Vdc, TC - 125"C) 1-5 Vdc, T c - 125"C) 2N6387 2N6388 2N6387 2N6388 'ebo _ _ _ _ Symbol , ) Base-Emitter On Voltage (IC - 5.0 Ade, V c e - 3.0 Vdc) ( l c - 10 Ade, V c e - 3.0 Vdc) hFE 2N6387 ,2N6388


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PDF
1995 - 2N6387

Abstract: 1N5825 2N6388 MSD6100
Text: Emitter­Base Voltage 10 15 5.0 Collector­Base Voltage 2N6387 2N6388 Unit VCEO VCB , Collector­Emitter Sustaining Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 VCEO(sus) = 80 Vdc (Min) - 2N6388 · Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , Medium-Power Silicon Transistors 2N6387 2N6388* SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387 /D MOTOROLA 2 Figure 2. Switching Times Test Circuit tr, tf 10 ns DUTY CYCLE = 1.0% V2


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PDF 2N6387/D* 2N6387/D 2N6387 1N5825 2N6388 MSD6100
2N6388

Abstract: 2N6388G 2N6387 2N6387G
Text: 2N6387 , 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , (sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 ·Monolithic Construction with Built-In , 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB 60 80 5.0 Vdc , ORDERING INFORMATION Device Symbol Max Unit RqJC 1.92 Package Shipping 2N6387


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PDF 2N6387, 2N6388 2N6388 2N6387 O-220AB 2N6388G 2N6387 2N6387G
2005 - 2N6388

Abstract: 2N6387 2N6386
Text: JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors , Collector-base voltage 2N6387 VALUE 40 Open emitter 60 2N6388 Collector-emitter voltage 40 2N6387 Open base 2N6388 VEBO Emitter-base voltage IC 60 Open collector 5 2N6386 , V 8 2N6387 /6388 IB V 80 Collector current-DC ICM V 80 2N6386 VCEO , -65~150 TC=25 JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power


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PDF 2N6386 2N6387 2N6388 O-220C 2N6666/6667/6668 2N6386 2N6387 2N6388
2002 - 2N6387

Abstract: 2N6387-D 1N5825 2N6388 MSD6100
Text: ON Semiconductor ) 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic Construction , Range Symbol 2N6387 2N6388 Unit VCEO VCB 60 80 Vdc 60 80 BASE , . 10 1 Publication Order Number: 2N6387 /D 2N6387 2N6388 PD, POWER DISSIPATION (WATTS


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PDF 2N6387 2N6388* 2N6388 2N6387, 220AB r14525 2N6387/D 2N6387 2N6387-D 1N5825 2N6388 MSD6100
2n6388

Abstract: 2N6387 2N6386 2N6666 2N6667 2N6668
Text: , 2N6387.2N6388 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic Symbol Min , (Min) - 2N6386 = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage VCE , * Complementary to 2N6666, 2N6667, 2N6668 MAXIMUM RATINGS lc = 3.0 A - 2N6386 lc = 5.0 A - 2N6387 , 2N6388 , , TEMPERATURECC) 150 NPN 2N6386 2N6387 2N6388 Characteristic Symbol 2N6386 2N6387 2N6388 Unit , 2N6387 2N6388 VCEO(sus) 40 60 80 V Collector Cutoff Current (VCE = 40 V, lB = 0 ) 2N6386 ( VCE = 60 V


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PDF 2N6386 2N6387 2N6388 2N6666, 2N6667, 2N6668 2N6386 2N6387, 2n6388 2N6387 2N6666 2N6667 2N6668
2N6388

Abstract: 2N6387 2n6386 2N6666 2N6667 2N6668 2n6387.2n6388
Text: 2N6386, 2N6387.2N6388 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted , = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage VCE(sat) = 2.0 V (Max.) | = 2.0 V (Max.)! Ic = 3.0 A - 2N6386 I L = 5.0 A - 2N6387 , 2N6388 £ < * DC Current , \ 25 50 75 100 125 Tc , TEMPERATURE^ C) 150 NPN 2N6386 2N6387 2N6388 Characteristic Symbol 2N6386 2N6387 2N6388 Unit Collector-Emitter Voltage VcEO 40 60 80 V COIIector-Base Voltage VCBO 40 60 80 V


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PDF 2N6386 2N6387 2N6388 2N6386 2N6387, 2N6666, 2N6667, 2N6668 2N6388 2N6387 2N6666 2N6667 2N6668 2n6387.2n6388
2006 - 2N6387

Abstract: 2N6388 1N5825 2N6387G 2N6388G MSD6100
Text: 2N6387 THERMAL CHARACTERISTICS Characteristics 1 TO-220AB 50 Units / Rail 2N6387G TO , 2N6387 , 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , 65 WATTS, 60 - 80 VOLTS VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic , Collector-Emitter Voltage 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB


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PDF 2N6387, 2N6388 2N6388 2N6387 O-220AB 2N6387/D 2N6387 1N5825 2N6387G 2N6388G MSD6100
2N6388

Abstract: No abstract text available
Text: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON , INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue Unit 2N6387 V CBO C , perature 0.25 A 65 W -65 to 150 °C 150 °c 1/4 2N6387 /2N6388 THERMAL DATA , = 200 mA fo r 2N6387 fo r 2N6388 V BE C o lle cto r-E m itte r S aturation V oltage lc =


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PDF 2N6387 2N6388 2N6388 O-220
1995 - 2N6387

Abstract: 2N6388
Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in , 2N6387 V CBO Collector-Base Voltage (I B = 0) 2N6388 60 80 V V CEV , C 150 o C 1/4 2N6387 /2N6388 THERMAL DATA R thj -ca se Thermal Resistance , VCEO V CE = rated VCEO I CEO Collector Cut-off Current (I B = 0) for 2N6387 for 2N6388 I


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PDF 2N6387 2N6388 2N6388 2N6387 O-220 O-220
2002 - 2N6388

Abstract: 2N6387
Text: amplifier and low-speed switching applications. 2N6387 2N6388* *ON Semiconductor Preferred Device · , @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic Construction with , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6387 60 60 10 15 2N6388 80 , 119 April, 2002 - Rev. 10 Publication Order Number: 2N6387 /D 2N6387 2N6388 TA TC 4.0 80 PD


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PDF 2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB
2006 - 2N6387-D

Abstract: 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductor ) 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic Construction , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N6387 2N6388 Unit , 1 Publication Order Number: 2N6387 /D 2N6387 2N6388 PD, POWER DISSIPATION (WATTS) TA


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PDF 2N6387 2N6388* 2N6388 2N6387, O-220AB 2N6387/D 2N6387-D 1N5825 2N6387 2N6388 MSD6100
2N6387

Abstract: 2N6386 2N6388 qdsp-u238 2N6386-2N6388 6388
Text: Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power , voltage 2N6387 Open emitter 40 60 2N6386 2N6387 Open base 60 Open collector 5 , 8 2N6387 /6388 PC V 80 2N6386 IB V 40 Collector current-DC ICM UNIT , TC=25 Inchange Semiconductor Product Specification 2N6386 2N6387 2N6388 Silicon NPN , voltage Base-emitter on voltage VBE-1 IC=0.2A, IB=0 2N6387 Collector cut-off current


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PDF 2N6386 2N6387 2N6388 O-220C 2N6666/6667/6668 2N6386 2N6387 2N6388 qdsp-u238 2N6386-2N6388 6388
Not Available

Abstract: No abstract text available
Text: P 35-2^1 File Number 610 2N6386, 2N6387 , 2N6388 SbE I 430 227 1 0 0 4 Q 5M 7 5Mb H H A S , 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A ( 2N6387 ,2N6388) Gain of 1000 at 3 A (2N6386) Features , amplifiers Hammer drivers Series and shunt regulators Qc The 2N6386, 2N6387 , and 2N6388* are m onolithic , 2N6386 is complem entary to the 2N6666, the 2N6387 is complem entary to the 2N6667, and the 2N6388 is com , , Absolute-Maximum Values: * VCBO 2N6386 40 40 40 40 5 8 15 0.25 65 2N6387 60 60 60 60 5 10 15 0.25 65 vs6G n


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PDF 2N6386, 2N6387, 2N6388 10-Ampere 2N6387 2N6388) 2N6386) O-22QAB
transistor A05

Abstract: 2N6388 npn darlington 2N6386 079V Complementary Darlington Audio Power Amplifier 2N6668 2N6667 2N6666 2N6387
Text: »_._ 2N6386, 2N6387 , 2N6388 File Number 610 10-Ampere N-P-N Darlington Power Transistors •40-60-80 Volts, 65 Watts Gain of 1000 at 5 A ( 2N6387 , 2N6388) Gain of 1000 at 3 A (2N6386) Features: ■Operates , -220AB The 2N6386, 2N6387 , and 2N6388* are monolithic silicon n-p-n Darlington transistors designed for low , be driven directly from integrated circuits. The 2N6386 is complementary to the 2N6666, the 2N6387 is , * In accordance with JEDEC registration data format JS-6 RDF-2. 2N6387 60 60 60 60 5 10 15 0.25 65


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PDF 2N6386, 2N6387, 2N6388 10-Ampere 2N6388) 2N6386) O-220AB transistor A05 npn darlington 2N6386 079V Complementary Darlington Audio Power Amplifier 2N6668 2N6667 2N6666 2N6387
2011 - Not Available

Abstract: No abstract text available
Text: 2N6387 , 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for , ˆ’ 80 VOLTS VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc − 2N6387 , 2N6388 Monolithic Construction , Collector−Emitter Voltage 2N6387 2N6388 VCEO 60 80 Collector−Base Voltage 2N6387 2N6388 VCB , Shipping 2N6387 THERMAL CHARACTERISTICS Characteristics ORDERING INFORMATION TO−220AB 50


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PDF 2N6387, 2N6388 2N6387 220AB 2N6387/D
2007 - 2N6387

Abstract: 2N6387G 1N5825 2N6388 2N6388G MSD6100
Text: 2N6387 , 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These , - 80 VOLTS VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 ·Monolithic Construction with , Voltage 2N6387 2N6388 VCEO 60 80 Collector-Base Voltage 2N6387 2N6388 VCB 60 80 , Shipping 2N6387 THERMAL CHARACTERISTICS Characteristics 2 TO-220AB 50 Units / Rail


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PDF 2N6387, 2N6388 2N6388 2N6387 O-220AB 2N6387/D 2N6387 2N6387G 1N5825 2N6388G MSD6100
2N6386

Abstract: MOTOROLA 6-38-7
Text: TECHNICAL DATA SEMICONDUCTOR 2N6386 2N6387 2N6388 DARLINGTON 8 AND 10 AMPERE PLASTIC MEDIUM-POWER , ) · · · 2N 6386 2N6387 2N 6388 Voltage - NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS , J ' T stg Cr - 0.52 , Q 8.0 15 10 15 10 15 2N6386 AO 2N6387 60 60 2N6388 , | b3t.73S4 GQ04b4S 0 | T_33 ^ 2N6386, 2N6387 , 2N6388 NPN ·E L E C T R IC A L CHARACTERISTICS C h , ) 2N6387 2N6388 Ic e o


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PDF 2N6386 2N6387 2N6388 MOTOROLA 6-38-7
2001 - 2N6387-D

Abstract: 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductort 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON , Voltage ­ @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector­Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic Construction , Voltage Symbol 2N6387 2N6388 Unit VCEO 60 80 Vdc Collector­Base Voltage VCB , March, 2001 ­ Rev. 9 1 Publication Order Number: 2N6387 /D 2N6387 2N6388 PD, POWER


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PDF 2N6387 2N6388* 2N6388 2N6387, 220AB r14525 2N6387/D 2N6387-D 1N5825 2N6387 2N6388 MSD6100
2011 - Not Available

Abstract: No abstract text available
Text: +150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C 2N6387 Symbol RqJC Max 1.92 Unit _C/W 2N6387G 2N6388 , 2N6387 , 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for , VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387 , 2N6388 Monolithic Construction with Built-In , @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 2N6387 2N6388 2N6387


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PDF 2N6387, 2N6388 2N6387 O-220AB 2N6387/D
Not Available

Abstract: No abstract text available
Text: File Num ber 610 2N6386, 2N6387 , 2N6388 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A ( 2N6387 , 2N6388) Gain of 1000 at 3 A (2N6386) Features , regulators CM The 2N6386, 2N6387 , and 2N6388* are monolithic silicon n-p-n Darlington transistors , , the 2N6387 is complementary to the 2N6667, and the 2N6388 is complementary to the 2N6668. These , n d ata fo rm a t JS-6 R D F -2 . 2-125 POWER TRANSISTORS 2N6386, 2N6387 , 2N6388 ELE C TR


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PDF 2N6386, 2N6387, 2N6388 10-Ampere 2N6388) 2N6386) O-22QAB
2n6386

Abstract: No abstract text available
Text: ._ 2N6386, 2N6387 , 2N6388 610 10-Ampere N-P-N Darlington Power Transistors ·40-60-80 Volts , amplifier« Hammer drivers Series and shunt regulators JED EC TO-220AB OC The 2N6386, 2N6387 , and , ry to the 2N6666, the 2N6387 is co m p le m e n ta ry to the 2N6667, and the 2N6388 is c o m p le m e , . 4 0 2N6387 60 60 60 60 5 810 15 0.25 65 See Fig.2 -6 5 to +150 235 2N 6388 80 80 80 80 5 V V , - Darlington Power Transistors 2N6386, 2N6387 , 2N6388 E LE C T R IC A L C H A R A C T E R IS T


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PDF 2N6386, 2N6387, 2N6388 10-Ampere O-220AB 2n6386
1997 - 2N6388 AT MICROELECTRONICS

Abstract: 2N6387 2N6388 NPN POWER DARLINGTON TRANSISTORS
Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS s s s s 2N6388 IS SGS-THOMSON , DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in , 2N6387 2N6388 V CBO Collector-Base Voltage (I B = 0) 60 80 V V V CEV , o C 1/4 2N6387 /2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max , Cut-off Current (I B = 0) for 2N6387 for 2N6388 I EBO Emitter Cut-off Current (I C = 0) V


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PDF 2N6387 2N6388 2N6388 2N6387 O-220 O-220 2N6388 AT MICROELECTRONICS NPN POWER DARLINGTON TRANSISTORS
2n6388

Abstract: 2n6387 NPN POWER DARLINGTON TRANSISTORS
Text: Æ 7 SGS-THOM SON Ä IM M © i® ltLi© îi® iies 2N6387 2N6388 SILICO NPN POWER DARLINGTON , INTEGRATED ANTtPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon , 2N6387 Collector-Base Voltage (Ib Value 60 60 60 60 5 10 Unit 2N6388 80 80 80 80 V V V V V A A A , 65 -65 to 150 150 °C °C Tj April 1997 1/2 119 2N6387 /2N6388 THERMAL DATA Rthj-ci , for 2N6387 for 2N6388 Veb = 60 = 80 Iebo = 5 V V c EO(sus )* lc = 200 mA for 2N6387


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PDF 2N6387 2N6388 2N6388 O-220 NPN POWER DARLINGTON TRANSISTORS
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